公开(公告)号：US5170166A

公开(公告)日：1992-12-08

申请号：US618181

申请日：1990-11-26

申请人： Masao Tanaka ,  Shinichi Tomita ,  Yoshiharu Unami ,  Hiroyuki Kawasaki

发明人： Masao Tanaka ,  Shinichi Tomita ,  Yoshiharu Unami ,  Hiroyuki Kawasaki

IPC分类号： H03M1/18

CPC分类号： H03M1/187

摘要： The invented auto-ranging device has a signal measuring A/D converter, a range-switching A/D converter of a faster processing speed, a range-switching amplifier with variable amplification capabilities, and a processing controller which utilizes the variable amplification factors to alter the output signals from the switching A/D converter to generate signals appropriate for a scale range of a multi-range measuring A/D converter.

摘要翻译： 本发明的自动测距装置具有信号测量A / D转换器，具有更快处理速度的量程切换A / D转换器，具有可变放大能力的量程切换放大器以及利用可变放大系数的处理控制器 改变来自开关A / D转换器的输出信号，以产生适合多范围测量A / D转换器的刻度范围的信号。

公开(公告)号：US07781313B2

公开(公告)日：2010-08-24

申请号：US12584269

申请日：2009-09-01

申请人： Shinichi Tomita ,  Masao Yoshimuta ,  Yasuyuki Hashimoto ,  Akira Nakashima

发明人： Shinichi Tomita ,  Masao Yoshimuta ,  Yasuyuki Hashimoto ,  Akira Nakashima

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/304 ,  H01L21/02024 ,  H01L21/2007 ,  H01L21/76256

摘要： A method for manufacturing a silicon wafer is characterized by performing one or both of grinding and polishing to a thin discoid silicon wafer to give bowl-shaped warpage that is concave at a central part to a wafer surface. One main surface of the thin discoid silicon wafer is adsorbed and held, and one or both of grinding and polishing are performed to the other main surface to fabricate a convex wafer whose thickness is increased from a wafer outer periphery toward a wafer center or fabricate a concave wafer whose thickness is reduced from the wafer outer periphery toward the wafer center. Then, the other main surface is adsorbed and held to protrude the center or the periphery of the one main surface side based on elastic deformation. One or both of grinding and polishing are carried out with respect to the one main surface to flatten the main surface, and adsorption and holding are released to give bowl-shaped warpage that is concave at the central part to the other main surface or the one main surface. By the method, an SOI wafer or an epitaxial silicon wafer having a high degree of flatness is obtained.

摘要翻译： 硅晶片的制造方法的特征在于对薄盘状硅晶片进行研磨抛光中的一个或两个以给出在晶片表面的中心部分凹陷的碗形翘曲。 吸附并保持薄盘形硅晶片的一个主表面，并且对另一个主表面进行研磨和抛光中的一个或两个以制造厚度从晶片外周朝向晶片中心增加的凸形晶片，或者制造 其厚度从晶片外周朝向晶片中心减小的凹晶片。 然后，基于弹性变形，另一个主表面被吸附并保持成一个主表面侧的中心或周边突出。 研磨抛光中的一个或两个相对于一个主表面进行，以平坦化主表面，并且释放吸附和保持以产生碗形翘曲，其在中心部分处凹入另一个主表面或一个 主表面。 通过该方法，获得具有高度平坦度的SOI晶片或外延硅晶片。

公开(公告)号：US20080132032A1

公开(公告)日：2008-06-05

申请号：US11946643

申请日：2007-11-28

申请人： Shinichi Tomita ,  Masao Yoshimuta ,  Yasuyuki Hashimoto ,  Akira Nakashima

发明人： Shinichi Tomita ,  Masao Yoshimuta ,  Yasuyuki Hashimoto ,  Akira Nakashima

IPC分类号： H01L21/30

CPC分类号： H01L21/304 ,  H01L21/02024 ,  H01L21/2007 ,  H01L21/76256

摘要： A method for manufacturing a silicon wafer is characterized by performing one or both of grinding and polishing to a thin discoid silicon wafer to give bowl-shaped warpage that is concave at a central part to a wafer surface. One main surface of the thin discoid silicon wafer is adsorbed and held, and one or both of grinding and polishing are performed to the other main surface to fabricate a convex wafer whose thickness is increased from a wafer outer periphery toward a wafer center or fabricate a concave wafer whose thickness is reduced from the wafer outer periphery toward the wafer center. Then, the other main surface is adsorbed and held to protrude the center or the periphery of the one main surface side based on elastic deformation. One or both of grinding and polishing are carried out with respect to the one main surface to flatten the main surface, and adsorption and holding are released to give bowl-shaped warpage that is concave at the central part to the other main surface or the one main surface. By the method, an SOI wafer or an epitaxial silicon wafer having a high degree of flatness is obtained.

摘要翻译： 硅晶片的制造方法的特征在于对薄盘状硅晶片进行研磨抛光中的一个或两个以给出在晶片表面的中心部分凹陷的碗形翘曲。 吸附并保持薄盘形硅晶片的一个主表面，并且对另一个主表面进行研磨和抛光中的一个或两个以制造厚度从晶片外周朝向晶片中心增加的凸形晶片，或者制造 其厚度从晶片外周朝向晶片中心减小的凹晶片。 然后，基于弹性变形，另一个主表面被吸附并保持成一个主表面侧的中心或周边突出。 研磨抛光中的一个或两个相对于一个主表面进行，以平坦化主表面，并且释放吸附和保持以产生碗形翘曲，其在中心部分处凹入另一个主表面或一个 主表面。 通过该方法，获得具有高度平坦度的SOI晶片或外延硅晶片。

公开(公告)号：US20050014347A1

公开(公告)日：2005-01-20

申请号：US10499028

申请日：2003-05-02

申请人： Shinichi Tomita ,  Kouji Yoshimaru

发明人： Shinichi Tomita ,  Kouji Yoshimaru

IPC分类号： H01L21/00 ,  H01L21/68 ,  H01L21/762 ,  H01L21/30

CPC分类号： B24B37/30 ,  H01L21/76251

摘要： Provided are a bonding substrate whose defective bonding portion in a peripheral region of an active layer has been removed by a polishing applied thereto after a surface grinding, a manufacturing method of the same substrate and wafer periphery pressing jigs. After the surface grinding, a periphery removing polishing is applied from an active layer wafer side of a bonding wafer so that a peripheral region of the active layer may be removed and a central region thereof may be left un-removed. Consequently, a periphery grinding and a periphery etching according to the prior art can be eliminated. Furthermore, an etch pit on a circumferential face of a wafer which could be caused by the periphery etching and a contamination or a scratching in an SOI layer which could be caused by a silicon oxide film left un-ground-off can be prevented, thereby achieving high yield and low cost.

摘要翻译： 提供了通过在表面研磨后对其进行研磨而除去有源层的周边区域的不良接合部的接合基板，同一基板的制造方法和晶片周边加压夹具。 在表面研磨之后，从接合晶片的有源层晶片侧施加周边去除抛光，使得有源层的周边区域可以被去除并且其中心区域可以被去除。 因此，可以消除根据现有技术的周边磨削和周边蚀刻。 此外，可以防止可能由外围蚀刻引起的晶片圆周面上的蚀刻凹坑以及可能由未氧化硅膜导致的SOI层中的污染或刮擦而导致的， 实现高产量和低成本。

公开(公告)号：US09058957B2

公开(公告)日：2015-06-16

申请号：US14232279

申请日：2012-05-28

申请人： Kunji Shigeto ,  Mitsugu Sato ,  Noriko Iizumi ,  Hiroyuki Noda ,  Masako Nishimura ,  Shunya Watanabe ,  Mami Konomi ,  Shinichi Tomita ,  Ryuichiro Tamochi

发明人： Kunji Shigeto ,  Mitsugu Sato ,  Noriko Iizumi ,  Hiroyuki Noda ,  Masako Nishimura ,  Shunya Watanabe ,  Mami Konomi ,  Shinichi Tomita ,  Ryuichiro Tamochi

IPC分类号： H01J37/153 ,  H01J37/10 ,  H01J37/28 ,  H01J37/26

CPC分类号： H01J37/153 ,  H01J37/10 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/1532 ,  H01J2237/21

摘要： A charged particle beam apparatus is provided with a parameter adjustment practice function for allowing any user to easily learn manual focus adjustment and stigma adjustment. Control conditions of the focus arrangement of an objective lens, an X-stigmator and a Y-stigmator are set according to the user's operation. According to a group of the focus adjustment, an X-stigma adjustment and a Y-stigma adjustment which are set, a practice-purpose image corresponding to the control conditions is read out from a storage device and is displayed on a screen.

摘要翻译： 带电粒子束装置具有用于允许任何用户容易地学习手动聚焦调整和柱头调节的参数调整实践功能。 根据使用者的操作设定物镜，X形扫描器和Y型标枪器的聚焦结构的控制条件。 根据一组焦点调整，设置了X字样调整和Y字符调整，从存储装置读出与控制条件相对应的实用目的图像，并将其显示在屏幕上。

公开(公告)号：US20140131590A1

公开(公告)日：2014-05-15

申请号：US14232279

申请日：2012-05-28

申请人： Kunji Shigeto ,  Mitsugu Sato ,  Noriko Iizumi ,  Hiroyuki Noda ,  Masako Nishimura ,  Shunya Watanabe ,  Mami Konomi ,  Shinichi Tomita ,  Ryuichiro Tamochi

发明人： Kunji Shigeto ,  Mitsugu Sato ,  Noriko Iizumi ,  Hiroyuki Noda ,  Masako Nishimura ,  Shunya Watanabe ,  Mami Konomi ,  Shinichi Tomita ,  Ryuichiro Tamochi

IPC分类号： H01J37/153 ,  H01J37/10

CPC分类号： H01J37/153 ,  H01J37/10 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/1532 ,  H01J2237/21

摘要： In recent years, a range of users for a charged particle beam apparatus such as a scanning electron microscope has been broadened. All users want to learn a manual adjustment technology, but it is very difficult to adjust all parameters for observation to have an appropriate value. Therefore, a beginner is unlikely to sufficiently show a performance of an apparatus. This disclosure aims to provide the charged particle beam apparatus including a parameter adjustment practice function for allowing any user to easily learn the manual adjustment technology.In order to solve the above-described problem, there is provided means for practicing a focus adjustment and a stigma adjustment. Control conditions of the focus arrangement of an objective lens, an X-stigmator and a Y-stigmator are set according to the user's operation. According to a group of the focus adjustment, an X-stigma adjustment and a Y-stigma adjustment which are set, a practice-purpose image corresponding to the control conditions is read out from a storage device and is displayed on a screen.

摘要翻译： 近年来，扫描型电子显微镜等带电粒子束装置的使用范围已经扩大。 所有用户想要学习手动调整技术，但是很难调整所有观察参数以获得适当的值。 因此，初学者不太可能充分显示设备的性能。 本公开旨在提供包括用于允许任何用户容易地学习手动调整技术的参数调整实践功能的带电粒子束装置。 为了解决上述问题，提供了用于实施焦点调整和柱头调节的装置。 根据使用者的操作设定物镜，X形扫描器和Y型标枪器的聚焦结构的控制条件。 根据一组焦点调整，设置了X字样调整和Y字符调整，从存储装置读出与控制条件相对应的实用目的图像，并将其显示在屏幕上。

公开(公告)号：US08143573B2

公开(公告)日：2012-03-27

申请号：US12490775

申请日：2009-06-24

申请人： Sukehiro Ito ,  Junichi Katane ,  Shigeru Kawamata ,  Shinichi Tomita

发明人： Sukehiro Ito ,  Junichi Katane ,  Shigeru Kawamata ,  Shinichi Tomita

IPC分类号： G02F1/1335 ,  G01K1/08

CPC分类号： H01J37/1478 ,  H01J37/153 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/2611

摘要： A charged particle beam impinging on a specimen is set to have left and right tilt angles corresponding to a parallactic angle. A control unit is provided which scans the beam over the specimen while giving a left tilt and a right tilt corresponding to the parallactic angle alternately to the beam on each scanning line. In this way, images are acquired. A three-dimensional image in which deterioration of the resolution is suppressed is displayed in real time by combining aberration cancellation means with the control of the beam according to the parallactic angle. The aberration cancellation means uses an optical system having plural stages of lenses to provide overall cancellation of aberrations by making use of the action of a lens to deflect the beam back to the optical axis.

摘要翻译： 照射在试样上的带电粒子束被设定为具有对应于副视角的左右倾斜角。 提供了一种控制单元，其在垂直于每个扫描线上的光束上交替地向左侧倾斜和对准视角的右侧倾斜扫描样本上的光束。 以这种方式，获取图像。 通过将像差消除装置与根据近视角的光束的控制组合来实时显示分辨率的劣化被抑制的三维图像。 像差消除装置使用具有多级透镜的光学系统，通过利用透镜的作用将光束偏转回光轴来提供像差的整体消除。

公开(公告)号：US07378332B2

公开(公告)日：2008-05-27

申请号：US10499028

申请日：2003-05-02

申请人： Shinichi Tomita ,  Kouji Yoshimaru

发明人： Shinichi Tomita ,  Kouji Yoshimaru

IPC分类号： H01L21/30

CPC分类号： B24B37/30 ,  H01L21/76251

摘要： Provided are a bonding substrate whose defective bonding portion in a peripheral region of an active layer has been removed by a polishing applied thereto after a surface grinding, a manufacturing method of the same substrate and wafer periphery pressing jigs. After the surface grinding, a periphery removing polishing is applied from an active layer wafer side of a bonding wafer so that a peripheral region of the active layer may be removed and a central region thereof may be left un-removed. Consequently, a periphery grinding and a periphery etching according to the prior art can be eliminated. Furthermore, an etch pit on a circumferential face of a wafer which could be caused by the periphery etching and a contamination or a scratching in an SOI layer which could be caused by a silicon oxide film left un-ground-off can be prevented, thereby achieving high yield and low cost.

摘要翻译： 提供了通过在表面研磨后对其进行研磨而除去有源层的周边区域的不良接合部的接合基板，同一基板的制造方法和晶片周边加压夹具。 在表面研磨之后，从接合晶片的有源层晶片侧施加周边去除抛光，使得有源层的周边区域可以被去除并且其中心区域可以被去除。 因此，可以消除根据现有技术的周边磨削和周边蚀刻。 此外，可以防止可能由外围蚀刻引起的晶片圆周面上的蚀刻凹坑以及可能由未氧化硅膜导致的SOI层中的污染或刮擦而导致的， 实现高产量和低成本。

公开(公告)号：US20070284542A1

公开(公告)日：2007-12-13

申请号：US11715506

申请日：2007-03-08

申请人： Takeshi Ogashiwa ,  Mitsugu Sato ,  Atsushi Takane ,  Toshihide Agemura ,  Yuusuke Narita ,  Takeharu Shichiji ,  Shinichi Tomita ,  Sukehiro Ito ,  Junichi Katane

发明人： Takeshi Ogashiwa ,  Mitsugu Sato ,  Atsushi Takane ,  Toshihide Agemura ,  Yuusuke Narita ,  Takeharu Shichiji ,  Shinichi Tomita ,  Sukehiro Ito ,  Junichi Katane

IPC分类号： G01N21/00

CPC分类号： G01N23/22 ,  H01J37/1471 ,  H01J37/28 ,  H01J2237/1501

摘要： A charged particle beam apparatus facilitating adjusting the beam center axis of a charged particle beam in a case where optical conditions are modified or in a case where the beam center axis of the charged particle beam is moved due to state variation of the apparatus. When the beam center axis of a primary charged particle beam is adjusted with a deflector (aligner), a processing step (1) for measuring the sensitivity of the aligner and a processing step (2) for detecting the deviation between the center of the primary charged particle beam and the center of the objective aperture are provided. The charged particle beam apparatus has means for determining the aligner set values, using the aligner sensitivity measured in the processing step (1) and the amount of deviation detected in the processing step (2), such that the primary charged particle beam passes through the center of the objective aperture and controlling the aligner using the aligner set values.

摘要翻译： 在光学条件被修改的情况下或者由于装置的状态变化使带电粒子束的束中心轴移动的情况下，有利于调整带电粒子束的束中心轴的带电粒子束装置。 当用偏转器（对准器）调整初级带电粒子束的束中心轴时，用于测量对准器的灵敏度的处理步骤（1）和用于检测初级带电粒子的中心之间的偏差的处理步骤（2） 提供带电粒子束和物镜孔的中心。 带电粒子束装置具有使用在处理步骤（1）中测量的对准器灵敏度和在处理步骤（2）中检测到的偏差量来确定对准器设定值的装置，使得初级带电粒子束通过 物镜光圈中心，并使用对准器设定值控制对准器。

公开(公告)号：US20100090109A1

公开(公告)日：2010-04-15

申请号：US12415907

申请日：2009-03-31

申请人： Michio HATANO ,  Sukehiro Ito ,  Shinichi Tomita ,  Junichi Katane

发明人： Michio HATANO ,  Sukehiro Ito ,  Shinichi Tomita ,  Junichi Katane

IPC分类号： G01N23/225

CPC分类号： H01J37/256 ,  H01J37/244 ,  H01J2237/2444 ,  H01J2237/2448 ,  H01J2237/2605 ,  H01J2237/2806

摘要： A scanning electron microscope includes an irradiation optical system for irradiating an electron beam to a sample; a sample holder for supporting the sample, arranged inside a sample chamber; at least one electric field supply electrode arranged around the sample holder; and an ion current detection electrode.

摘要翻译： 扫描电子显微镜包括用于向样品照射电子束的照射光学系统; 用于支撑样品的样品保持器，布置在样品室内部; 至少一个电场供给电极，布置在所述样品保持器周围; 和离子电流检测电极。