公开(公告)号：US20090104728A1

公开(公告)日：2009-04-23

申请号：US12338882

申请日：2008-12-18

申请人： Masato KOBAYAKAWA ,  Hitoshi TAKEDA ,  Hisayuki MIKI ,  Tetsuo SAKURAI

发明人： Masato KOBAYAKAWA ,  Hitoshi TAKEDA ,  Hisayuki MIKI ,  Tetsuo SAKURAI

IPC分类号： H01L31/18 ,  H01L21/18

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/24

摘要： An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.

摘要翻译： 本发明的目的是提供一种氮化镓化合物半导体多层结构，其可用于制造在低电压下工作并保持良好的发光输出的氮化镓化合物半导体发光器件。 本发明的氮化镓化合物半导体多层结构包括基板，形成在基板上的n型层，发光层和p型层，所述发光层具有多量子阱结构，其中， 阱层和阻挡层重复交替层叠，所述发光层被n型层和p型层夹持，其中阱层包括厚部和薄部，阻挡层含有 掺杂剂。

公开(公告)号：US20120086027A1

公开(公告)日：2012-04-12

申请号：US13326542

申请日：2011-12-15

申请人： Yasunori YOKOYAMA ,  Hisayuki MIKI

发明人： Yasunori YOKOYAMA ,  Hisayuki MIKI

IPC分类号： H01L33/32

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01S5/0213 ,  H01S5/02244 ,  H01S5/0425 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer (12) made of a group-III nitride compound on a substrate (11) by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer (14), a light-emitting layer (15), and a p-type semiconductor layer (16) each made of a group-III nitride compound semiconductor on the intermediate layer (12). Nitrogen is used as the group-V element, and the thickness of the intermediate layer (12) is in the range of 20 to 80 nm.

摘要翻译： III族氮化物化合物半导体发光器件，III族氮化物化合物半导体发光器件的制造方法和灯。 该方法包括以下步骤：通过使包含V族元素的气体与等离子体中的金属材料反应而形成在基底（11）上形成由III族氮化物化合物制成的中间层（12） 并在中间层（12）上依次形成由III族氮化物化合物半导体制成的n型半导体层（14），发光层（15）和p型半导体层（16）。 使用氮作为V族元素，中间层（12）的厚度在20〜80nm的范围内。

公开(公告)号：US20080303054A1

公开(公告)日：2008-12-11

申请号：US12133010

申请日：2008-06-04

申请人： Yasunori YOKOYAMA ,  Takehiko OKABE ,  Hisayuki MIKI

发明人： Yasunori YOKOYAMA ,  Takehiko OKABE ,  Hisayuki MIKI

IPC分类号： H01L33/00 ,  C23C16/00 ,  H01L31/20 ,  H01L21/00

CPC分类号： C23C14/0617 ,  C23C14/3464 ,  C23C14/568 ,  C30B23/002 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631

摘要： An apparatus for producing a group-III nitride semiconductor layer which forms a group-III nitride semiconductor layer on a substrate by a sputtering method, the apparatus including: a first plasma-generating region where a target containing a group-III element is disposed and the target is sputtered to generate material particles formed of a material contained in the target; and a second plasma generating region where the substrate is disposed and nitrogen-containing plasma is generated. The first plasma-generating region and the second plasma-generating region are provided inside a chamber, and the first plasma-generating region and the second plasma-generating region are separated by a shielding wall which has an opening part from which the material particles are supplied onto the substrate. Also disclosed are a method of producing a group-III nitride semiconductor layer, a method of producing a group-III nitride semiconductor light-emitting device, and a lamp thereof.

摘要翻译： 一种通过溅射法在基板上形成III族氮化物半导体层的III族氮化物半导体层的制造装置，其特征在于，包括：第一等离子体产生区域，其中配置有III族元素的靶， 溅射目标以产生由包含在靶中的材料形成的材料颗粒; 以及设置有基板的第二等离子体产生区域和产生含氮等离子体。 第一等离子体产生区域和第二等离子体产生区域设置在室内，并且第一等离子体产生区域和第二等离子体产生区域被屏蔽壁分离，屏蔽壁具有开口部分，材料粒子 供应到基板上。 还公开了III族氮化物半导体层的制造方法，III族氮化物半导体发光元件的制造方法及其制造方法。

公开(公告)号：US20110198212A1

公开(公告)日：2011-08-18

申请号：US12987828

申请日：2011-01-10

申请人： Hisayuki MIKI ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki

发明人： Hisayuki MIKI ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki

IPC分类号： C23C14/34

CPC分类号： C23C14/34 ,  C23C14/0647 ,  C23C14/541 ,  H01L33/007

摘要： A sputtering apparatus (1) includes: a chamber (10) having an inside maintained in a depressurized state to generate plasma discharge (20); a cathode (22) placed in the chamber (10) and holding a target (21); and a substrate holder (60) holding a substrate (110) so that one surface of the substrate (110) faces the surface of the target (21). The substrate (110) is arranged at an upper portion in the sputtering apparatus (1) with the surface of the substrate (110) facing downward. The target (21) is arranged at a lower portion in the sputtering apparatus (1) with the surface of the target (21) facing upward. The sputtering apparatus (1) includes a heater (65) for heating the substrate (110). The temperature of the substrate (110) is raised by absorbing electromagnetic waves radiated from the heater (65). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.

摘要翻译： 溅射装置（1）包括：具有保持在减压状态的内部以产生等离子体放电（20）的室（10）; 放置在所述室（10）中并保持靶（21）的阴极（22）; 以及保持基板（110）的基板保持器（60），使得基板（110）的一个表面面向目标（21）的表面。 基板（110）布置在溅射装置（1）的上部，基板（110）的表面朝下。 目标（21）被布置在溅射装置（1）的下部，靶（21）的表面朝上。 溅射装置（1）包括用于加热基板（110）的加热器（65）。 通过吸收从加热器（65）辐射的电磁波来升高基板（110）的温度。 还公开了使用溅射装置制造半导体发光元件的方法。

公开(公告)号：US20090114942A1

公开(公告)日：2009-05-07

申请号：US12257065

申请日：2008-10-23

申请人： Yasunori YOKOYAMA ,  Takehiko OKABE ,  Hisayuki MIKI

发明人： Yasunori YOKOYAMA ,  Takehiko OKABE ,  Hisayuki MIKI

IPC分类号： H01L33/00 ,  C23C14/34 ,  C01B21/06 ,  H01L21/20

CPC分类号： H01L33/007 ,  C23C14/0078 ,  C23C14/0641 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer having high crystallinity. An embodiment of the present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer on a substrate 11 using a sputtering method. The apparatus includes: a chamber 41; a target 47 that is arranged in the chamber 41 and includes a group-III element; a first plasma generating means 51 that generates a first plasma for sputtering the target 47 to supply raw material particles to the substrate 11; a second plasma generating means 52 that generates a second plasma including a nitrogen element; and a control means that controls the first plasma generating means 51 and the second plasma generating means 52 to alternately generate the first plasma and the second plasma in the chamber 41.

摘要翻译： 本发明提供一种具有高结晶度的III族氮化物半导体层的制造装置。 本发明的实施例提供一种使用溅射法在基板11上制造III族氮化物半导体层的装置。 该装置包括：室41; 设置在室41中并包括III族元件的靶47; 第一等离子体产生装置51，其产生用于溅射靶47以将原料颗粒供应到基板11的第一等离子体; 第二等离子体产生装置52，其产生包括氮元素的第二等离子体; 以及控制装置，其控制第一等离子体产生装置51和第二等离子体产生装置52，以在腔室41中交替地产生第一等离子体和第二等离子体。

公开(公告)号：US20100148150A1

公开(公告)日：2010-06-17

申请号：US12614111

申请日：2009-11-06

申请人： Hisayuki MIKI

发明人： Hisayuki MIKI

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/06 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A Group III nitride compound semiconductor light emitting device is provided which has: an n-type semiconductor layer (12); an active layer (13) of a multiple quantum well structure laminated on the n-type semiconductor layer (12); a first p-type semiconductor layer (14) that is a layer of a superlattice structure in which an undoped film (14a) that has a composition AlxGa1-xN (x indicating composition ratio, being within a range 0

摘要翻译： 提供了具有：n型半导体层（12）的III族氮化物化合物半导体发光器件; 层叠在所述n型半导体层（12）上的多量子阱结构的有源层（13）。 第一p型半导体层（14），其是具有组成为Al x Ga 1-x N（x表示组成比，在0

公开(公告)号：US20090283795A1

公开(公告)日：2009-11-19

申请号：US12464522

申请日：2009-05-12

申请人： Hisayuki MIKI ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

发明人： Hisayuki MIKI ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L21/02631 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/12 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4823 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/00 ,  H01L2924/00014

摘要： Provided is a method for producing a group III nitride semiconductor light emitting device capable of producing a group III nitride semiconductor light emitting device with excellent light emitting properties with excellent productivity; a group III nitride semiconductor light emitting device; and a lamp.Provided is a method in which a buffer layer 12 composed of a group III nitride compound is laminated on a substrate 11 and then an n-type semiconductor layer 14 provided with an underlying layer 14a, a light emitting layer 15, and an p-type semiconductor layer 16 are sequentially laminated on the buffer layer 12, and is a method in which the buffer layer 12 is formed so as to have a composition of AlXGa1-XN (0≦X

摘要翻译： 本发明提供能够制造发光性优异且生产率优异的III族氮化物半导体发光元件的III族氮化物半导体发光元件的制造方法。 III族氮化物半导体发光器件; 和一盏灯。 提供了一种方法，其中将由III族氮化物化合物构成的缓冲层12层压在基板11上，然后层叠设置有下层14a，发光层15和p型的n型半导体层14 半导体层16依次层叠在缓冲层12上，并且是通过用等离子体激活而形成缓冲层12以具有AlXGa1-XN（0 <= X <1）的组成的方法，从而 至少使金属Ga源和含有V族元素的气体反应，并且在缓冲层12上形成下层14。

公开(公告)号：US20110284919A1

公开(公告)日：2011-11-24

申请号：US13205569

申请日：2011-08-08

申请人： Yasunori YOKOYAMA ,  Hisayuki MIKI

发明人： Yasunori YOKOYAMA ,  Hisayuki MIKI

IPC分类号： H01L33/30 ,  H01L33/40

CPC分类号： C23C14/0617 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02631 ,  H01L33/007 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method for manufacturing a Group III nitride semiconductor layer according to the present invention includes a sputtering step of disposing a substrate and a target containing a Group III element in a chamber, introducing a gas for formation of a plasma in the chamber and forming a Group III nitride semiconductor layer added with Si as a dopant on the substrate by a reactive sputtering method, wherein a Si hydride is added in the gas for formation of a plasma.

摘要翻译： 根据本发明的制造III族氮化物半导体层的方法包括溅射步骤，将基板和包含III族元素的靶设置在室中，在室中引入用于形成等离子体的气体，并形成组 III族氮化物半导体层通过反应溅射法在衬底上添加Si作为掺杂剂，其中在用于形成等离子体的气体中加入Si氢化物。