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    SEMICONDUCTOR WORKPIECE WITH BACKSIDE METALLIZATION AND METHODS OF DICING THE SAME
    1.
    发明申请
    SEMICONDUCTOR WORKPIECE WITH BACKSIDE METALLIZATION AND METHODS OF DICING THE SAME 有权
    具有背面金属化的半导体工件及其制造方法

    公开(公告)号：US20130221517A1

    公开(公告)日：2013-08-29

    申请号：US13408102

    申请日：2012-02-29

    申请人： Michael Su ,  Lei Fu ,  Edward S. Alcid

    发明人： Michael Su ,  Lei Fu ,  Edward S. Alcid

    IPC分类号： H01L23/498 ,  H01L21/50

    CPC分类号： H01L21/78

    摘要： Various semiconductor workpieces and methods of dicing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a channel in a metallization structure on a backside of a semiconductor workpiece. The semiconductor workpiece includes a substrate. The channel is in substantial alignment with a dicing street on a front side of the semiconductor chip.

    摘要翻译： 公开了各种半导体工件及其切割方法。 一方面，提供一种制造方法，其包括在半导体工件的背面上的金属化结构中形成通道。 半导体工件包括基板。 该通道与半导体芯片正面上的切割街大致对准。

    Semiconductor workpiece with backside metallization and methods of dicing the same
    2.
    发明授权
    Semiconductor workpiece with backside metallization and methods of dicing the same 有权
    具有背面金属化的半导体工件及其切割方法

    公开(公告)号：US08723314B2

    公开(公告)日：2014-05-13

    申请号：US13408102

    申请日：2012-02-29

    申请人： Michael Su ,  Lei Fu ,  Edward S. Alcid

    发明人： Michael Su ,  Lei Fu ,  Edward S. Alcid

    IPC分类号： H01L23/498 ,  H01L21/30

    CPC分类号： H01L21/78

    摘要： Various semiconductor workpieces and methods of dicing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a channel in a metallization structure on a backside of a semiconductor workpiece. The semiconductor workpiece includes a substrate. The channel is in substantial alignment with a dicing street on a front side of the semiconductor chip.

    摘要翻译： 公开了各种半导体工件及其切割方法。 一方面，提供一种制造方法，其包括在半导体工件的背面上的金属化结构中形成通道。 半导体工件包括基板。 该通道与半导体芯片正面上的切割街大致对准。

    Semiconductor chip with reinforcement structure
    3.
    发明授权
    Semiconductor chip with reinforcement structure 有权
    具有加强结构的半导体芯片

    公开(公告)号：US07737563B2

    公开(公告)日：2010-06-15

    申请号：US12132734

    申请日：2008-06-04

    申请人： Michael Su ,  Lei Fu

    发明人： Michael Su ,  Lei Fu

    IPC分类号： H01L23/488 ,  H01L21/58

    CPC分类号： H01L21/563 ,  H01L23/10 ,  H01L23/3114 ,  H01L23/562 ,  H01L23/585 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/00

    摘要： Various semiconductor chip reinforcement structures and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes coupling a semiconductor chip to a substrate wherein the semiconductor chip has a first side facing toward but separated from a second of the substrate to define an interface region. An array of electrical interconnects is provided between the semiconductor chip and the substrate positioned in the interface region. A reinforcement structure is coupled to the first side of the semiconductor chip and the second side of the substrate and in the interface region while outside the array of electrical interconnects. An underfill is provided in the interface region.

    摘要翻译： 公开了各种半导体芯片加强结构及其制造方法。 在一个方面，提供了一种制造方法，其包括将半导体芯片耦合到基板，其中半导体芯片具有面向基板的第二侧面的第一侧面，而与第二基板分离，以限定界面区域。 在半导体芯片和位于界面区域中的基板之间提供电互连阵列。 加强结构耦合到半导体芯片的第一侧和衬底的第二侧以及在电互连阵列外部的界面区域中。 在界面区域设置底部填充物。

    Semiconductor Chip with Reinforcement Structure
    5.
    发明申请
    Semiconductor Chip with Reinforcement Structure 有权
    具有加固结构的半导体芯片

    公开(公告)号：US20090302427A1

    公开(公告)日：2009-12-10

    申请号：US12132734

    申请日：2008-06-04

    申请人： Michael Su ,  Lei Fu

    发明人： Michael Su ,  Lei Fu

    IPC分类号： H01L23/00 ,  H01L21/56

    CPC分类号： H01L21/563 ,  H01L23/10 ,  H01L23/3114 ,  H01L23/562 ,  H01L23/585 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/00

    摘要： Various semiconductor chip reinforcement structures and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes coupling a semiconductor chip to a substrate wherein the semiconductor chip has a first side facing toward but separated from a second of the substrate to define an interface region. An array of electrical interconnects is provided between the semiconductor chip and the substrate positioned in the interface region. A reinforcement structure is coupled to the first side of the semiconductor chip and the second side of the substrate and in the interface region while outside the array of electrical interconnects. An underfill is provided in the interface region.

    摘要翻译： 公开了各种半导体芯片加强结构及其制造方法。 在一个方面，提供了一种制造方法，其包括将半导体芯片耦合到基板，其中半导体芯片具有面向基板的第二侧面的第一侧面，而与第二基板分离，以限定界面区域。 在半导体芯片和位于界面区域中的基板之间提供电互连阵列。 加强结构耦合到半导体芯片的第一侧和衬底的第二侧以及在电互连阵列外部的界面区域中。 在界面区域设置底部填充物。