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公开(公告)号:US09627281B2
公开(公告)日:2017-04-18
申请号:US12860256
申请日:2010-08-20
申请人: Seth Prejean , Dales Kent , Ronnie Brandon , Gamal Refai-Ahmed , Michael Z. Su , Michael Bienek , Joseph Siegel , Bryan Black
发明人: Seth Prejean , Dales Kent , Ronnie Brandon , Gamal Refai-Ahmed , Michael Z. Su , Michael Bienek , Joseph Siegel , Bryan Black
IPC分类号: H01L23/58 , H01L21/66 , H01L21/56 , H01L21/683 , H01L25/065 , H01L23/42
CPC分类号: H01L22/20 , H01L21/563 , H01L21/6835 , H01L21/6836 , H01L22/14 , H01L23/42 , H01L25/0657 , H01L2221/68327 , H01L2221/68386 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/81002 , H01L2224/81815 , H01L2224/831 , H01L2225/06513 , H01L2225/06517 , H01L2225/06565 , H01L2924/01019 , H01L2924/01079 , H01L2924/014 , H01L2924/00
摘要: A method of manufacturing is provided that includes applying a thermal interface tape to a side of a semiconductor wafer that includes at least one semiconductor chip. The thermal interface material tape is positioned on the at least one semiconductor chip. The at least one semiconductor chip is singulated from the semiconductor wafer with at least a portion of the thermal interface tape still attached to the semiconductor chip.
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公开(公告)号:US08796842B2
公开(公告)日:2014-08-05
申请号:US12860244
申请日:2010-08-20
申请人: Gamal Refai-Ahmed , Michael Z. Su , Bryan Black
发明人: Gamal Refai-Ahmed , Michael Z. Su , Bryan Black
IPC分类号: H01L23/34
CPC分类号: H01L23/49827 , H01L23/04 , H01L23/13 , H01L23/3675 , H01L25/0657 , H01L2224/16225 , H01L2224/16227 , H01L2224/32245 , H01L2224/73253 , H01L2225/06517 , H01L2225/0652 , H01L2225/06572 , H01L2225/06589 , H01L2924/00014 , H01L2924/10253 , H01L2924/15311 , H01L2924/15321 , H01L2924/00 , H01L2224/0401
摘要: A method of assembling a semiconductor chip device is provided that includes providing a circuit board including a surface with an aperture. A portion of a first heat spreader is positioned in the aperture. A stack is positioned on the first heat spreader. The stack includes a first semiconductor chip positioned on the first heat spreader and a substrate that has a first side coupled to the first semiconductor chip.
摘要翻译: 提供一种组装半导体芯片器件的方法,其包括提供包括具有孔径的表面的电路板。 第一散热器的一部分位于孔中。 堆叠位于第一散热器上。 堆叠包括位于第一散热器上的第一半导体芯片和具有耦合到第一半导体芯片的第一侧的衬底。
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公开(公告)号:US20140103506A1
公开(公告)日:2014-04-17
申请号:US14132557
申请日:2013-12-18
申请人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
发明人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
IPC分类号: H01L23/24 , H01L23/495
CPC分类号: H01L23/24 , H01L21/563 , H01L23/147 , H01L23/293 , H01L23/295 , H01L23/3121 , H01L23/3128 , H01L23/3675 , H01L23/49575 , H01L23/49822 , H01L23/49827 , H01L23/49833 , H01L24/16 , H01L25/0657 , H01L2224/13099 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/83051 , H01L2224/92125 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2225/06568 , H01L2225/06589 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/07802 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15311 , H01L2924/16152 , H01L2924/16251 , H01L2924/166 , H01L2924/167 , H01L2924/00
摘要: A method of manufacturing is provided that includes providing a semiconductor chip with an insulating layer. The insulating layer includes a trench. A second semiconductor chip is stacked on the first semiconductor chip to leave a gap. A polymeric filler is placed in the gap wherein a portion of the polymeric filler is drawn into the trench.
摘要翻译: 提供一种制造方法,其包括为半导体芯片提供绝缘层。 绝缘层包括沟槽。 第二半导体芯片堆叠在第一半导体芯片上以留下间隙。 将聚合物填料放置在间隙中,其中一部分聚合物填料被拉入沟槽。
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公开(公告)号:US08338961B2
公开(公告)日:2012-12-25
申请号:US13456968
申请日:2012-04-26
申请人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
发明人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
IPC分类号: H01L23/34
CPC分类号: H01L23/585 , H01L21/76898 , H01L23/3171 , H01L23/481 , H01L23/49816 , H01L23/60 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L2224/16225 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/01322 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/351 , H01L2224/81 , H01L2924/00
摘要: A method of manufacturing includes connecting a first end of a first through-silicon-via to a first die seal proximate a first side of a first semiconductor chip. A second end of the first thu-silicon-via is connected to a second die seal proximate a second side of the first semiconductor chip opposite the first side.
摘要翻译: 一种制造方法包括将第一穿通硅通孔的第一端连接到靠近第一半导体芯片的第一侧的第一管芯密封件。 第一硅硅通孔的第二端连接到靠近第一半导体芯片的与第一侧相对的第二侧的第二管芯密封件。
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公开(公告)号:US08617926B2
公开(公告)日:2013-12-31
申请号:US12878795
申请日:2010-09-09
申请人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
发明人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
IPC分类号: H01L21/00
CPC分类号: H01L23/24 , H01L21/563 , H01L23/147 , H01L23/293 , H01L23/295 , H01L23/3121 , H01L23/3128 , H01L23/3675 , H01L23/49575 , H01L23/49822 , H01L23/49827 , H01L23/49833 , H01L24/16 , H01L25/0657 , H01L2224/13099 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/83051 , H01L2224/92125 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2225/06568 , H01L2225/06589 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/07802 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15311 , H01L2924/16152 , H01L2924/16251 , H01L2924/166 , H01L2924/167 , H01L2924/00
摘要: A method of manufacturing is provided that includes providing a semiconductor chip with an insulating layer. The insulating layer includes a trench. A second semiconductor chip is stacked on the first semiconductor chip to leave a gap. A polymeric filler is placed in the gap wherein a portion of the polymeric filler is drawn into the trench.
摘要翻译: 提供一种制造方法,其包括为半导体芯片提供绝缘层。 绝缘层包括沟槽。 第二半导体芯片堆叠在第一半导体芯片上以留下间隙。 将聚合物填料放置在间隙中,其中一部分聚合物填料被拉入沟槽。
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公开(公告)号:US08472190B2
公开(公告)日:2013-06-25
申请号:US12889590
申请日:2010-09-24
申请人: Gamal Refai-Ahmed , Bryan Black , Michael Z. Su
发明人: Gamal Refai-Ahmed , Bryan Black , Michael Z. Su
IPC分类号: H05H7/20
CPC分类号: H01L25/0657 , H01L23/13 , H01L23/42 , H01L23/49816 , H01L23/49827 , H01L25/0652 , H01L2023/4062 , H01L2224/1403 , H01L2224/141 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/1703 , H01L2224/32245 , H01L2224/73253 , H01L2224/81192 , H01L2224/83192 , H01L2224/92225 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/06572 , H01L2225/06589 , H01L2924/01322 , H01L2924/15151 , H01L2924/15311 , H01L2924/15321 , H05K1/0204 , H05K1/141 , H05K1/181 , H05K2201/09072 , H05K2201/10378 , H05K2201/10416 , H05K2201/10515 , H05K2201/1056
摘要: A method of manufacturing is provided that includes placing a thermal management device in thermal contact with a first semiconductor chip of a semiconductor chip device. The semiconductor chip device includes a first substrate coupled to the first semiconductor chip. The first substrate has a first aperture. At least one of the first semiconductor chip and the thermal management device is at least partially positioned in the first aperture.
摘要翻译: 提供了一种制造方法,其包括将热管理装置放置成与半导体芯片装置的第一半导体芯片热接触。 半导体芯片器件包括耦合到第一半导体芯片的第一衬底。 第一基板具有第一孔。 第一半导体芯片和热管理装置中的至少一个至少部分地位于第一孔中。
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公开(公告)号:US08193039B2
公开(公告)日:2012-06-05
申请号:US12889615
申请日:2010-09-24
申请人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
发明人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
IPC分类号: H01L21/00
CPC分类号: H01L23/585 , H01L21/76898 , H01L23/3171 , H01L23/481 , H01L23/49816 , H01L23/60 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L2224/16225 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/01322 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/351 , H01L2224/81 , H01L2924/00
摘要: A method of manufacturing includes connecting a first end of a first through-silicon-via to a first die seal proximate a first side of a first semiconductor chip. A second end of the first thu-silicon-via is connected to a second die seal proximate a second side of the first semiconductor chip opposite the first side.
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公开(公告)号:US20120098119A1
公开(公告)日:2012-04-26
申请号:US12910379
申请日:2010-10-22
申请人: Gamal Refai-Ahmed , Michael Z. Su , Bryan Black
发明人: Gamal Refai-Ahmed , Michael Z. Su , Bryan Black
IPC分类号: H01L23/373 , H01L25/11 , H01L21/54
CPC分类号: H01L23/22 , H01L21/54 , H01L23/42 , H01L23/473 , H01L25/115 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/15311 , H01L2924/00
摘要: A method of manufacturing is provided that includes providing a semiconductor chip device that has a circuit board and a first semiconductor chip coupled thereto. A lid is placed on the circuit board. The lid includes an opening and an internal cavity. A liquid thermal interface material is placed in the internal cavity for thermal contact with the first semiconductor chip and the circuit board.
摘要翻译: 提供了一种制造方法,其包括提供具有电路板和与其耦合的第一半导体芯片的半导体芯片器件。 盖子放在电路板上。 盖子包括开口和内部空腔。 液体热界面材料放置在内腔中,用于与第一半导体芯片和电路板热接触。
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公开(公告)号:US20130147028A1
公开(公告)日:2013-06-13
申请号:US13313584
申请日:2011-12-07
申请人: Michael Z. Su , Bryan Black , Gamal Refai-Ahmed
发明人: Michael Z. Su , Bryan Black , Gamal Refai-Ahmed
CPC分类号: H01L21/50 , H01L23/3737 , H01L23/42 , H01L23/433 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/97 , H01L2224/16146 , H01L2224/16245 , H01L2224/17181 , H01L2224/27312 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/29291 , H01L2224/29324 , H01L2224/32245 , H01L2224/73253 , H01L2224/83191 , H01L2224/83192 , H01L2224/83815 , H01L2224/97 , H01L2924/01322 , H01L2924/014 , H01L2924/00014 , H01L2924/01047 , H01L2924/01029 , H01L2224/83 , H01L2924/00
摘要: Various heat spreaders and methods of making and using the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a heat spreader that has a surface adapted to establish thermal contact with a first semiconductor chip and a second semiconductor chip on a substrate. The surface includes a first portion adapted to thermally contact a solder-based thermal interface material and a second portion having an opening adapted to hold an organic thermal interface material.
摘要翻译: 公开了各种散热器及其制造和使用方法。 一方面,提供了一种制造方法,其包括形成具有适于与衬底上的第一半导体芯片和第二半导体芯片建立热接触的表面的散热器。 表面包括适于热接触基于焊料的热界面材料的第一部分和具有适于保持有机热界面材料的开口的第二部分。
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公开(公告)号:US20120043539A1
公开(公告)日:2012-02-23
申请号:US12860256
申请日:2010-08-20
申请人: Seth Prejean , Dales Kent , Ronnie Brandon , Gamal Refai-Ahmed , Michael Z. Su , Michael Bienek , Joseph Siegel , Bryan Black
发明人: Seth Prejean , Dales Kent , Ronnie Brandon , Gamal Refai-Ahmed , Michael Z. Su , Michael Bienek , Joseph Siegel , Bryan Black
CPC分类号: H01L22/20 , H01L21/563 , H01L21/6835 , H01L21/6836 , H01L22/14 , H01L23/42 , H01L25/0657 , H01L2221/68327 , H01L2221/68386 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/81002 , H01L2224/81815 , H01L2224/831 , H01L2225/06513 , H01L2225/06517 , H01L2225/06565 , H01L2924/01019 , H01L2924/01079 , H01L2924/014 , H01L2924/00
摘要: A method of manufacturing is provided that includes applying a thermal interface tape to a side of a semiconductor wafer that includes at least one semiconductor chip. The thermal interface material tape is positioned on the at least one semiconductor chip. The at least one semiconductor chip is singulated from the semiconductor wafer with at least a portion of the thermal interface tape still attached to the semiconductor chip.
摘要翻译: 提供了一种制造方法,其包括将热界面带施加到包括至少一个半导体芯片的半导体晶片的侧面。 热界面材料带位于至少一个半导体芯片上。 至少一个半导体芯片从半导体晶片分离,其中至少一部分热界面带仍然附着到半导体芯片上。
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