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    Semiconductor device and method of manufacturing the same
    2.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US07241685B2

    公开(公告)日：2007-07-10

    申请号：US10390413

    申请日：2003-03-18

    申请人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hideo Miura ,  Shinji Nishihara ,  Masashi Sahara

    发明人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hideo Miura ,  Shinji Nishihara ,  Masashi Sahara

    IPC分类号： H01L21/44

    CPC分类号： H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： There is provided a semiconductor device having a wiring structure which reduces possibility of a short circuit, and method of making the device. Besides, there is provided a semiconductor device having high reliability. Further, there is provided a semiconductor device having high yield. A wiring line is formed at one main surface side of a semiconductor substrate, and has a laminate structure of an adjacent conductor layer and a main wiring layer. The main wiring layer contains an added element to prevent migration. The adjacent conductor layer is formed of a material for preventing a main constituent element and the added element of the main wiring layer from diffusing into the substrate beneath the adjacent conductor layer, and the concentration of the added element at a location close to an interface between the adjacent conductor layer and the main wiring layer is low compared to the concentration of the added element in the main wiring layer spaced from the adjacent conductor layer.

    摘要翻译： 提供一种具有降低短路可能性的布线结构的半导体器件及其制造方法。 此外，提供了具有高可靠性的半导体器件。 此外，提供了一种具有高产率的半导体器件。 在半导体衬底的一个主表面侧形成布线，并且具有相邻导体层和主布线层的叠层结构。 主配线层包含一个添加的元素以防止迁移。 相邻的导体层由用于防止主要构成元素和主配线层的添加元素扩散到相邻导体层下方的基板中的材料形成，并且添加元素在靠近界面处的位置的浓度 与相邻的导体层间隔开的主配线层的添加元素的浓度相比，相邻的导体层和主布线层的电位低。

    Optical device having connections with optical members through protective medium
    3.
    发明申请
    Optical device having connections with optical members through protective medium 有权
    光学装置通过保护介质与光学构件连接

    公开(公告)号：US20070140617A1

    公开(公告)日：2007-06-21

    申请号：US11591560

    申请日：2006-11-02

    申请人： Shinichi Shimotsu ,  Shinichiro Sonoda ,  Hideo Miura

    发明人： Shinichi Shimotsu ,  Shinichiro Sonoda ,  Hideo Miura

    IPC分类号： G02B6/32 ,  G02B6/26 ,  G02B6/42

    CPC分类号： G02B6/262 ,  G02B6/32 ,  G02B6/421

    摘要： An optical device includes: a first optical member having a light-exit end at which light exits the first optical member; a second optical member having a light-entrance end which abuts the light-exit end through a protective medium and from which the light enters the second optical member; and the protective medium which is arranged between the light-exit end and the light-entrance end, and suppresses fixing together of the light-exit end and the light-entrance end. Specifically, the protective medium is transparent and arranged between the light-exit end and the light-entrance end, and is reusable even after the light-exit end and the light-entrance end are pressed together with a pressure of approximately 0.5 or 1 kgf and are then separated from each other.

    摘要翻译： 光学装置包括：具有光出射端的第一光学构件，光从该第一光学构件出射; 第二光学构件，其具有通过保护介质邻接所述光出射端的光入射端，并且所述光进入所述第二光学构件; 以及布置在光出射端和光入射端之间的保护介质，并且抑制光出射端和光入射端的固定在一起。 具体地说，保护介质是透明的并且设置在光出射端和光入射端之间，并且即使在光出射端和光入射端之间也以约0.5或1kgf的压力被压在一起 然后彼此分离。

    Miniaturized semiconductor device with improved dielectric properties
    4.
    发明授权
    Miniaturized semiconductor device with improved dielectric properties 有权
    具有改善介电特性的小型半导体器件

    公开(公告)号：US07217971B2

    公开(公告)日：2007-05-15

    申请号：US10848473

    申请日：2004-05-17

    申请人： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

    发明人： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

    IPC分类号： H01L31/119

    CPC分类号： H01L21/823462 ,  H01L21/28097 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28518 ,  H01L21/31604 ,  H01L21/823412 ,  H01L27/1085 ,  H01L27/10873 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/78696

    摘要： Diffusion layers 2–5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2–5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

    摘要翻译： 在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8,9，以便成为MOS晶体管。 氧化锆或氧化铪被用作栅介质膜6,7的主要成分。 栅介质膜6,7例如通过CVD形成。 作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。 在使用表面为（111）晶面的基板的情况下，在使用表面为（001）晶面的硅基板的情况下，氧的扩散系数小于1/100，氧气 扩散被控制。 因此，控制氧扩散，防止漏电流的产生，提高性能。 实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

    Method of designing a semiconductor device
    7.
    发明授权
    Method of designing a semiconductor device 失效
    设计半导体器件的方法

    公开(公告)号：US06949387B2

    公开(公告)日：2005-09-27

    申请号：US10626718

    申请日：2003-07-25

    申请人： Hideo Miura ,  Makoto Ogasawara ,  Hiroo Masuda ,  Jun Murata ,  Noriaki Okamoto

    发明人： Hideo Miura ,  Makoto Ogasawara ,  Hiroo Masuda ,  Jun Murata ,  Noriaki Okamoto

    IPC分类号： H01L21/762 ,  H01L27/08 ,  H01L21/66

    CPC分类号： H01L21/76205 ,  H01L21/76202 ,  H01L27/0802

    摘要： A technique for a semiconductor device is provided that includes forming circuit regions on a device formation region and device isolation regions on a semiconductor substrate, a ratio of the width of a device isolation region to the width of adjacent circuit regions thereto is set at 2 to 50. A design method is also provided and includes conducting measurements such as of thicknesses of a pad oxide film and a nitride film, the internal stress of the nitride film, the width of both device formation and isolation regions, the depth of the etched portion of the nitride film for forming the groove in a device isolation region, conducting stress analysis in the proximity of the groove due to thermal oxidation, and setting values pertaining to the width of the device formation region and of the device isolation region which do not lead to occurrence of dislocation.

    摘要翻译： 提供了一种半导体器件的技术，其包括在器件形成区域上形成电路区域和半导体衬底上的器件隔离区域，器件隔离区域的宽度与其相邻电路区域的宽度的比率被设置为2至 还提供了一种设计方法，包括进行测量，例如衬垫氧化膜和氮化物膜的厚度，氮化物膜的内部应力，器件形成和隔离区域的宽度，蚀刻部分的深度 的用于在器件隔离区域中形成沟槽的氮化物膜，由于热氧化而在沟槽附近进行导电应力分析，以及与器件形成区域的宽度和不引导的器件隔离区域的设定值 发生脱位。

    Light wavelength converting module
    8.
    发明授权
    Light wavelength converting module 失效
    光波长转换模块

    公开(公告)号：US06882665B2

    公开(公告)日：2005-04-19

    申请号：US09972960

    申请日：2001-10-10

    申请人： Hideo Miura ,  Shinichiro Sonoda

    发明人： Hideo Miura ,  Shinichiro Sonoda

    IPC分类号： H01S5/024 ,  H01S5/0683 ,  H01S3/10 ,  H01S3/30

    CPC分类号： H01S5/02415 ,  H01S5/0683

    摘要： A light wavelength converting module is provided in which generation of noise due to return light is prevented and a wave whose wavelength is converted can be obtained stably. The light wavelength converting module is formed by a semiconductor laser from which a fundamental wave exits, and a light wavelength converting element which is optically coupled to the semiconductor laser and which converts a wavelength of the fundamental wave which enters from the semiconductor laser. A wavelength plate is disposed at a light exiting side of the light wavelength converting element. An IR cutting filter, which serves as a removing means for removing the fundamental wave from a second harmonic, is disposed between the wavelength plate and the light wavelength converting element.

    摘要翻译： 提供一种光波长转换模块，其中防止了由返回光产生的噪声，并且可以稳定地获得波长转换的波。 光波长转换模块由基波出射的半导体激光器和与半导体激光器光学耦合并转换从半导体激光器入射的基波的波长的光波长转换元件形成。 波长板设置在光波长转换元件的光出射侧。 作为用于从二次谐波除去基波的去除装置的红外截止滤光器设置在波长板和光波长转换元件之间。

    Process for producing semiconductor device and semiconductor device produced thereby
    10.
    发明授权
    Process for producing semiconductor device and semiconductor device produced thereby 失效
    由此生产半导体器件和半导体器件的方法

    公开(公告)号：US06858515B2

    公开(公告)日：2005-02-22

    申请号：US10638485

    申请日：2003-08-12

    申请人： Norio Ishitsuka ,  Hideo Miura ,  Shuji Ikeda ,  Yasuko Yoshida ,  Norio Suzuki ,  Kozo Watanabe ,  Kenji Kanamitsu

    发明人： Norio Ishitsuka ,  Hideo Miura ,  Shuji Ikeda ,  Yasuko Yoshida ,  Norio Suzuki ,  Kozo Watanabe ,  Kenji Kanamitsu

    IPC分类号： H01L21/76 ,  H01L21/316 ,  H01L21/762 ,  H01L29/06

    CPC分类号： H01L21/76232 ,  H01L29/0657

    摘要： A semiconductor device free from electric failure in transistors at upper trench edges can be produced by a simplified process comprising basic steps of forming a pad oxide film on the circuit-forming side of a semiconductor substrate; forming an oxidation prevention film on the pad oxide film; removing the oxidation presention film and the pad oxide film at a desired position, thereby exposing the surface of the semiconductor substrate; horizontally recessing the pad oxide film, etching the exposed surface of the semiconductor substrate by isotropic etching; forming a trench to a desired depth, using the oxidation prevention film as a mask; horizontally recessing the pad oxide film; oxidizing the trench formed in the semiconductor substrate; embedding an embedding isolation film in the oxidized trench; removing the embedding isolation film formed on the oxidation prevention film; removing the oxidation prevention film formed on the circuit-forming side of the semiconductor substrate; and removing the pad oxide film formed on the circuit-forming side of the semiconductor substrate, where round upper trench edges with a curvature can be obtained, if necessary, by conducting isotropic etching of exposed surface of the semiconductor substrate and horizontally recessing of the pad oxide film before the oxidation of the trench, whereby only one oxidation step is required.

    摘要翻译： 在上沟槽边缘处的晶体管中没有电故障的半导体器件可以通过简化的工艺制造，包括在半导体衬底的电路形成侧形成衬垫氧化膜的基本步骤; 在衬垫氧化膜上形成氧化防止膜; 在期望的位置除去氧化呈现膜和衬垫氧化膜，从而暴露半导体衬底的表面; 水平地凹陷衬垫氧化膜，通过各向同性蚀刻蚀刻半导体衬底的暴露表面; 使用氧化防止膜作为掩模，形成期望深度的沟槽; 使衬垫氧化膜水平地凹陷; 氧化在半导体衬底中形成的沟槽; 在氧化沟槽中嵌入嵌入隔离膜; 去除形成在防氧化膜上的嵌入隔离膜; 去除形成在半导体衬底的电路形成侧的氧化防止膜; 以及去除形成在半导体衬底的电路形成侧的衬垫氧化膜，其中如果需要，可以获得具有曲率的圆形上沟槽边缘，通过对半导体衬底的暴露表面进行各向同性蚀刻并且使衬垫的水平凹陷 氧化膜在沟槽氧化之前，因此只需要一个氧化步骤。