公开(公告)号：US5862605A

公开(公告)日：1999-01-26

申请号：US862155

申请日：1997-05-22

申请人： Kuniaki Horie ,  Naoaki Ogure ,  Yukio Fukunaga ,  Akihisa Hongo

发明人： Kuniaki Horie ,  Naoaki Ogure ,  Yukio Fukunaga ,  Akihisa Hongo

IPC分类号： B01D1/00 ,  C23C16/448 ,  F26B19/00

CPC分类号： B01D1/00 ,  C23C16/4481

摘要： Heat can be supplied effectively to a porous member of a vaporizer apparatus so that a vaporizing operation can be carried out smoothly and efficiently. The vaporizer apparatus includes a vaporizer section having a porous member including a liquid receiving surface and a vapor discharge surface. A feed supply section supplies a liquid feed material to the liquid receiving surface of the porous member. A heating medium passage is in thermal contact with the porous member. A heating medium supply system flows a heating medium of a temperature higher than a vaporization temperature of the liquid feed material through the heating medium passage.

摘要翻译： 可以有效地将热量提供给蒸发器装置的多孔构件，从而可以平稳有效地进行蒸发操作。 蒸发器装置包括具有包括液体接收表面和蒸汽排放表面的多孔构件的蒸发器部分。 供给部供给液体供给材料到多孔构件的液体接收表面。 加热介质通道与多孔构件热接触。 加热介质供应系统通过加热介质通道流动高于液体进料的蒸发温度的加热介质。

公开(公告)号：US06730596B1

公开(公告)日：2004-05-04

申请号：US09868140

申请日：2001-06-15

申请人： Akira Fukunaga ,  Kuniaki Horie ,  Naoaki Ogure ,  Takao Kato ,  Akihisa Hongo ,  Hiroshi Nagasawa

发明人： Akira Fukunaga ,  Kuniaki Horie ,  Naoaki Ogure ,  Takao Kato ,  Akihisa Hongo ,  Hiroshi Nagasawa

IPC分类号： H01L214763

CPC分类号： H05K3/4061 ,  B05C11/08 ,  C23C18/02 ,  C23C18/08 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K3/045 ,  H05K3/102 ,  H05K2201/0257 ,  H01L2924/00

摘要： The present invention relates particularly to a method of and an apparatus for forming a fine interconnection in a highly integrated circuit formed on a semiconductor substrate. The method has the steps of preparing a substrate having fine recesses formed in a surface thereof, dispersing ultrafine particles made at least partly of a metal in a predetermined solvent, producing an ultrafine particle dispersed liquid, supplying the ultrafine particle dispersed liquid to the fine recesses of the substrate, heating the substrate to melt and bond the metal, and chemical mechanical polishing the surface of the substrate to remove an excessively attached metal therefrom. According to the present invention, it is possible to stably deposit an interconnection metal of good quality using an inexpensive material.

摘要翻译： 本发明尤其涉及形成在半导体衬底上的高度集成电路中形成精细互连的方法和装置。 该方法具有如下步骤：制备在其表面形成有微细凹槽的基材，将至少部分由金属制成的超微粒子分散在预定溶剂中，制备超细颗粒分散液体，将超细颗粒分散液体供应到细小凹槽 加热衬底以熔融和粘合金属，并化学机械抛光衬底的表面以从中除去过量附着的金属。 根据本发明，可以使用便宜的材料稳定地沉积质量好的互连金属。

公开(公告)号：US6036783A

公开(公告)日：2000-03-14

申请号：US834593

申请日：1997-04-07

申请人： Yukio Fukunaga ,  Takeshi Murakami ,  Naoaki Ogure ,  Akihisa Hongo

发明人： Yukio Fukunaga ,  Takeshi Murakami ,  Naoaki Ogure ,  Akihisa Hongo

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/4486 ,  C23C16/45565

摘要： A vaporizer apparatus enables efficient vaporization of a liquid material for the production of high dielectric thin film devices by allowing a sufficient dwell time for complete vaporization of the feed liquid. The vaporizer apparatus also prevents degradation of the feed gas after vaporization and provides a stable supply of the vaporized feed gas to the substrate. The vaporizer apparatus comprises an outer member having a cylindrical inner surface, and an inner member having a cylindrical outer surface opposing the cylindrical inner surface of the outer member. A feed material passage having a spiral configuration is formed on at least one of the cylindrical inner surface and the cylindrical outer surface. The feed material passage communicates with a feed liquid entry opening and a feed gas exit opening. A heating device is provided for heating at least one of the outer member and inner member.

摘要翻译： 蒸发器装置能够通过允许足够的停留时间来充分蒸发进料液体，从而有效地蒸发用于生产高介电薄膜装置的液体材料。 汽化器装置还防止蒸发后的进料气体的劣化并且提供稳定的气化进料气体供应到基材。 蒸发器装置包括具有圆柱形内表面的外部构件和具有与外部构件的圆柱形内表面相对的圆柱形外表面的内部构件。 在圆柱形内表面和圆柱形外表面中的至少一个上形成具有螺旋构造的进给材料通道。 进料材料通道与进料液入口和进料气体出口开口连通。 提供加热装置用于加热外部构件和内部构件中的至少一个。

公开(公告)号：US06419462B1

公开(公告)日：2002-07-16

申请号：US09627779

申请日：2000-07-28

申请人： Kuniaki Horie ,  Yukio Fukunaga ,  Akihisa Hongo ,  Kiwamu Tsukamoto ,  Kenji Kamoda ,  Hirotake Yamagishi ,  Shinya Uemura

发明人： Kuniaki Horie ,  Yukio Fukunaga ,  Akihisa Hongo ,  Kiwamu Tsukamoto ,  Kenji Kamoda ,  Hirotake Yamagishi ,  Shinya Uemura

IPC分类号： F04B4310

CPC分类号： F04B13/00 ,  F04B43/02 ,  F04B43/073 ,  F04B43/113 ,  F04B53/143 ,  F04B2205/07

摘要： A positive displacement liquid-delivery apparatus includes a positive displacement pump 110 and a differential pressure control unit 142. The positive displacement pump 110 includes a liquid-delivery chamber 128 having a watertight housing 122 with one part formed of a flexible diaphragm 124, and a diaphragm driver 136 linked to the diaphragm 124 for deforming the same to discharge fluid from the liquid-delivery chamber 128. The differential pressure control unit 142 uniformly controls the differential pressure inside and outside the diaphragm 124 during the pumping process.

摘要翻译： 正排量输送装置包括容积泵110和差压控制单元142.正排量泵110包括具有防水外壳122的液体输送室128，其中一部分由柔性膜片124形成， 膜片驱动器136连接到隔膜124，用于使其变形以从液体输送室128排出流体。差压控制单元142在泵送过程期间均匀地控制膜片124内部和外部的压差。

公开(公告)号：US07033463B1

公开(公告)日：2006-04-25

申请号：US09762582

申请日：1999-08-11

申请人： Akihisa Hongo ,  Naoaki Ogure ,  Hiroaki Inoue ,  Satoshi Sendai ,  Tetsuma Ikegami ,  Koji Mishima ,  Shuichi Okuyama ,  Mizuki Nagai ,  Ryoichi Kimizuka ,  Megumi Maruyama

发明人： Akihisa Hongo ,  Naoaki Ogure ,  Hiroaki Inoue ,  Satoshi Sendai ,  Tetsuma Ikegami ,  Koji Mishima ,  Shuichi Okuyama ,  Mizuki Nagai ,  Ryoichi Kimizuka ,  Megumi Maruyama

IPC分类号： C25D17/00

CPC分类号： H01L21/76843 ,  C23C18/1632 ,  C23C18/1653 ,  C23C18/1682 ,  C23C18/38 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877 ,  H01L2221/1089 ,  H05K3/107 ,  H05K3/241 ,  H05K3/423

摘要： A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.

摘要翻译： 一种方法和装置，通过有效地填充形成在半导体衬底中的精细凹槽，镀覆金属而没有空隙或污染，从而形成衬底以形成布线。 用电镀金属填充形成在半导体衬底中的布线凹槽的衬底的电镀包括在衬底上进行形成初始层的无电镀处理，并且进行用电镀金属填充布线凹槽的电解电镀工艺，同时 初始层用作供料层。

公开(公告)号：US20060144714A1

公开(公告)日：2006-07-06

申请号：US11360685

申请日：2006-02-24

申请人： Akihisa Hongo ,  Naoaki Ogure ,  Hiroaki Inous ,  Satoshi Sendai ,  Tetsuma Ikegami ,  Koji Mishima ,  Shuichi Okuyama ,  Mizuki Nagai ,  Ryoichi Kimizuka ,  Megumi Maruyama

发明人： Akihisa Hongo ,  Naoaki Ogure ,  Hiroaki Inous ,  Satoshi Sendai ,  Tetsuma Ikegami ,  Koji Mishima ,  Shuichi Okuyama ,  Mizuki Nagai ,  Ryoichi Kimizuka ,  Megumi Maruyama

IPC分类号： C25D3/38

CPC分类号： H01L21/76843 ,  C23C18/1632 ,  C23C18/1653 ,  C23C18/1682 ,  C23C18/38 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877 ,  H01L2221/1089 ,  H05K3/107 ,  H05K3/241 ,  H05K3/423

摘要： A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.

公开(公告)号：US06929722B2

公开(公告)日：2005-08-16

申请号：US09945711

申请日：2001-09-05

申请人： Akihisa Hongo ,  Naoaki Ogure ,  Hiroaki Inoue ,  Norio Kimura ,  Fumio Kuriyama ,  Manabu Tsujimura ,  Kenichi Suzuki ,  Atsushi Chono

发明人： Akihisa Hongo ,  Naoaki Ogure ,  Hiroaki Inoue ,  Norio Kimura ,  Fumio Kuriyama ,  Manabu Tsujimura ,  Kenichi Suzuki ,  Atsushi Chono

IPC分类号： C25D7/12 ,  H01L21/00 ,  H01L21/288 ,  H01L21/768 ,  C25D17/00 ,  H01M4/29 ,  C23B3/00

CPC分类号： H01L21/67167 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/67051 ,  H01L21/67126 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719 ,  H01L21/67219 ,  H01L21/6723 ,  H01L21/76849 ,  H01L21/76877 ,  Y10S134/902

摘要： A substrate plating apparatus forms an interconnection layer on an interconnection region composed of a fine groove and/or a fine hole defined in a substrate. The substrate plating apparatus includes a plating unit for forming a plated layer on a surface of the substrate including the interconnection region, a chemical mechanical polishing unit for chemically mechanically polishing the substrate to remove the plated layer from the surface of the substrate leaving a portion of the plated layer in the interconnection region, a cleaning unit for cleaning the substrate after the plated layer is formed or the substrate is chemically mechanically polished, a drying unit for drying the substrate after the substrate is cleaned, and a substrate transfer unit for transferring the substrate to and from each of the first plating unit, the first chemical mechanical polishing unit, the cleaning unit, and the drying unit. The first plating unit, the first chemical mechanical polishing unit, the cleaning unit, the drying unit, and the substrate transfer unit are combined into a unitary arrangement.

摘要翻译： 基板电镀装置在由微细凹槽和/或限定在基板中的细孔构成的互连区域上形成布线层。 基板电镀装置包括用于在包括互连区域的基板的表面上形成镀层的电镀单元，用于对基板进行化学机械抛光以从基板的表面移除镀层的化学机械抛光单元， 互连区域中的镀层，用于在形成镀层之后对基板进行清洗或基板进行化学机械抛光的清洁单元，用于在清洁基板之后使基板干燥的干燥单元，以及用于将基板转印 第一电镀单元，第一化学机械抛光单元，清洁单元和干燥单元中的每一个的基板。 第一电镀单元，第一化学机械抛光单元，清洁单元，干燥单元和基板转移单元组合成一体的布置。

公开(公告)号：US06793794B2

公开(公告)日：2004-09-21

申请号：US10098415

申请日：2002-03-18

申请人： Akihisa Hongo ,  Naoaki Ogure ,  Hiroyuki Ueyama ,  Junitsu Yamakawa ,  Mizuki Nagai ,  Kenichi Suzuki ,  Atsushi Chono ,  Satoshi Sendai ,  Koji Mishima

发明人： Akihisa Hongo ,  Naoaki Ogure ,  Hiroyuki Ueyama ,  Junitsu Yamakawa ,  Mizuki Nagai ,  Kenichi Suzuki ,  Atsushi Chono ,  Satoshi Sendai ,  Koji Mishima

IPC分类号： C25D500

CPC分类号： C25D21/14 ,  C25D7/12 ,  C25D17/001

摘要： The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution. An insoluble anode is disposed in the plating bath opposite the substrate. The substrate plating apparatus comprises a circulating vessel or dummy vessel provided separate from the plating bath, with a soluble anode and a cathode disposed in the circulating vessel or dummy vessel. An anion exchange film or selective cation exchange film is disposed between the anode and cathode and isolates the same, wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and the generated metal ions are supplied to the plating bath. The substrate plating apparatus can also comprise an ion exchange film or neutral porous diaphragm disposed between the substrate and anode in the plating bath, wherein the ion exchange film or neutral porous diaphragm divides the plating bath into a substrate region and an anode region.

摘要翻译： 本发明涉及一种用于在含有电镀液的电镀液中电镀基板的基板电镀装置。 不同的阳极设置在与基底相对的电镀槽中。 基板电镀装置包括与电镀槽分开设置的循环容器或虚拟容器，其中可溶性阳极和阴极设置在循环容器或假容器中。 阴极交换膜或选择性阳离子交换膜设置在阳极和阴极之间，并隔离其中，其中通过在可溶性阳极和阴极之间流动电流而在循环容器或虚拟容器中产生金属离子，并且所产生的金属离子 被供应到电镀浴。 基板电镀装置还可以包括设置在电镀槽中的基板和阳极之间的离子交换膜或中性多孔隔膜，其中离子交换膜或中性多孔隔膜将电镀槽分成衬底区域和阳极区域。

公开(公告)号：US06495004B1

公开(公告)日：2002-12-17

申请号：US09555650

申请日：2000-06-29

申请人： Fumio Kuriyama ,  Naoaki Ogure ,  Akihisa Hongo

发明人： Fumio Kuriyama ,  Naoaki Ogure ,  Akihisa Hongo

IPC分类号： C25D1700

CPC分类号： H01L21/67161 ,  C23C18/1632 ,  C25D7/123 ,  C25D17/001 ,  H01L21/67173 ,  H01L21/6723

摘要： A substrate plating apparatus forms a plating layer on the surface of a substrate and stores the substrate until the next process in a way that the substrate is not exposed to the atmosphere. The substrate plating apparatus is not only capable of introducing semiconductor wafers continuously one by one into the plating apparatus without loading the wafers into cassettes, but is also capable of preventing particle contamination and the formation of oxidized film on the surface of the wafers, thus reducing the number of process and reducing the installation area required for the apparatus. The substrate plating apparatus includes a plating process section (20) for plating a substrate, a washing process section (10) for washing the substrate after the plating process, and a storage vessel (16) containing a storing solution in which the substrate is immersed after having been plated and washed. A substrate conveyor is provided in the substrate plating apparatus for loading substrates into the substrate plating apparatus and discharging substrates out of the substrate plating apparatus, or for performing at least one of the loading or discharging operations, such that the substrates are loaded into the substrate plating apparatus one at a time, plated in the plating process section, washed in the washing process section, and subsequently discharged one at a time from the substrate plating apparatus.

摘要翻译： 基板电镀装置在基板的表面上形成镀层，并以基板不暴露于大气的方式将基板存储到下一工序。 基板电镀装置不仅可以将半导体晶片连续地引入电镀装置，而且不将晶片装载到盒中，而且还能够防止颗粒污染和在晶片表面上形成氧化膜，从而减少 过程的数量和减少设备所需的安装面积。 基板电镀设备包括用于电镀基板的电镀处理部分（20），用于在电镀工艺之后洗涤基板的洗涤处理部分（10），以及储存容器（16），所述储存容器包含浸没所述基板的储存溶液 经过电镀和洗涤。 基板输送机设置在基板电镀装置中，用于将基板装载到基板电镀装置中，并将基板从基板镀敷装置中排出，或者进行至少一个装载或放电操作，使得基板被装入基板 电镀装置一次，镀在电镀处理部分中，在洗涤工序部分洗涤，然后一次从基板镀敷装置中排出。

公开(公告)号：US06558518B1

公开(公告)日：2003-05-06

申请号：US09612218

申请日：2000-07-07

申请人： Satoshi Sendai ,  Akihisa Hongo ,  Kenya Tomioka ,  Katsumi Tsuda ,  Masayuki Kumekawa ,  Naoaki Ogure ,  Kenichi Sasabe

发明人： Satoshi Sendai ,  Akihisa Hongo ,  Kenya Tomioka ,  Katsumi Tsuda ,  Masayuki Kumekawa ,  Naoaki Ogure ,  Kenichi Sasabe

IPC分类号： C25B1500

CPC分类号： C25D17/12 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  H01L21/02068 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/6723 ,  H01L21/76883

摘要： A substrate such as a semiconductor wafer is plated to fill a metal such as copper (Cu) or the like in interconnection grooves defined in the substrate. An apparatus for plating such a substrate has a plating chamber for holding a plating solution, the plating chamber housing an anode that is immersible in the plating solution held by the plating chamber. A plating solution ejector pipe produces an upward jet of plating solution from a plating solution supplied to the plating chamber from an external source, and a substrate holder removably holds a substrate and positions the substrate such that a surface to be plated of the substrate is held in contact with the jet of plating solution. The plating chamber has a plating solution outlet defined in a bottom thereof for discharging a portion of the supplied plating solution via through-holes defined in the anode and/or around the anode out of the plating chamber.

摘要翻译： 电镀衬底如半导体晶片以在衬底中限定的互连槽中填充铜（Cu）等金属。 用于电镀这种基板的装置具有用于保持电镀液的电镀室，电镀室容纳浸入由电镀室保持的镀液中的阳极。 电镀溶液喷射管从外部源产生从供给到电镀室的镀液的向上喷射的电镀溶液，并且衬底保持器可移除地保持衬底并定位衬底，使得保持衬底的待镀表面 与电镀液接触。 电镀室具有限定在其底部的电镀溶液出口，用于通过限定在阳极中和/或阳极周围的通孔从电镀室中排出一部分供应的电镀溶液。