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    Semiconductor quantum effect device having negative differential resistance characteristics
    1.
    发明授权
    Semiconductor quantum effect device having negative differential resistance characteristics 失效
    具有负差分电阻特性的半导体量子效应器件

    公开(公告)号：US5021863A

    公开(公告)日：1991-06-04

    申请号：US405976

    申请日：1989-09-12

    申请人： Naoki Yokoyama ,  Toshio Fujii

    发明人： Naoki Yokoyama ,  Toshio Fujii

    IPC分类号： H01L29/201 ,  H01L29/205 ,  H01L29/76 ,  H01L29/88

    CPC分类号： H01L29/7606 ,  H01L29/205 ,  H01L29/88

    摘要： A semiconductor quantum effect device having negative differential resistance characteristics includes a composite potential barrier layer including a first potential barrier layer and a second potential barrier layer; a carrier injection side semiconductor layer connected in contact with the first potential barrier layer; and a carrier injected side semiconductor layer connected in contact with the second potential barrier layer. The semiconductor material elements forming the respective layer satisfy the condition that, when the voltage is not applied to the semiconductor material elements, the energy level at the bottom of conduction band in the carrier injection side semiconductor layer and in the carrier injected side semiconductor layer is lower than the energy level at the top of the valance band in the second potential barrier layer and that a Fermi level within the second potential barrier layer is nearly at the same level as the Fermi level within the barrier injected side semiconductor layer, and an electron and a hole are operated in a cooperative relation therebetween.

    INFORMATION RECORDING DEVICE
    5.
    发明申请
    INFORMATION RECORDING DEVICE 有权
    信息记录装置

    公开(公告)号：US20130249164A1

    公开(公告)日：2013-09-26

    申请号：US13990644

    申请日：2011-11-30

    申请人： Naoki Yokoyama ,  Akira Takei ,  Tatsuya Asakawa ,  Hiromitsu Tamura ,  Yuichi Aihara

    发明人： Naoki Yokoyama ,  Akira Takei ,  Tatsuya Asakawa ,  Hiromitsu Tamura ,  Yuichi Aihara

    IPC分类号： B65H5/06

    CPC分类号： B65H5/062 ,  B41J3/50 ,  B41J11/006 ,  B41J13/12 ,  G03G15/70 ,  G03G21/1638 ,  G03G21/1642

    摘要： Provided is an information recording device in which jam processing operation can be easily performed with simple operation when a recording medium such as a card is jammed in a conveyance passage. A card storing section and a medium conveyance passage for conveying a card to an image forming section are arranged in a housing at upper and lower sides and a passage open-close member for removing a card jammed at the image forming section is arranged therebetween. Then, electronic information recording means is incorporated in the passage open-close member and a medium conveyance path which conveys a card toward the electronic information recording means is arranged on a medium introduction passage for feeding a card from the card storing section to the medium conveyance passage. According to the above, a card jammed at the image forming section or the information recording section can be easily removed to the outside of the device by opening the card storing section.

    摘要翻译： 提供一种信息记录装置，其中当诸如卡片的记录介质卡在输送通道中时，可以简单地进行卡纸处理操作。 在上下侧的壳体中配置有卡片存储部和用于将卡传送到图像形成部的介质输送通道，并且布置有用于去除卡在图像形成部的卡的通道开闭部件。 然后，电子信息记录装置结合在通道开 - 关构件中，并且向电子信息记录装置传送卡的介质输送路径被布置在介质引入通道上，用于将卡从卡存储部分馈送到介质输送 通道。 根据上述，通过打开卡存储部，可以容易地将卡在图像形成部分或信息记录部分的卡片移除到装置的外部。

    Resonant-tunneling heterojunction bipolar transistor device
    6.
    发明授权
    Resonant-tunneling heterojunction bipolar transistor device 失效
    谐振隧道异双极晶体管器件

    公开(公告)号：US5151618A

    公开(公告)日：1992-09-29

    申请号：US659162

    申请日：1991-02-22

    申请人： Naoki Yokoyama ,  Kenichi Imamura

    发明人： Naoki Yokoyama ,  Kenichi Imamura

    IPC分类号： H01L29/68 ,  H01L21/331 ,  H01L29/08 ,  H01L29/20 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737

    CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L29/0895 ,  H01L29/7376

    摘要： A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer; a base layer; a collector layer operatively facing the base layer to form a PN junction at the face between the base layer and the collector layer; and a superlattice structure including at least one quantum well defining a sub-band of energy at which carriers resonant-tunnel therethrough, formed at least in the emitter layer and operatively facing to the base layer. The RHBT has a differential negative resistance characteristics for realizing a variety of logic circuits and includes an electron resonance and a positive hole resonance, for which the generation condition is changeable in response to a mole fraction of material of the emitter layer.

    Semiconductor device
    9.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US4903090A

    公开(公告)日：1990-02-20

    申请号：US161272

    申请日：1988-02-22

    申请人： Naoki Yokoyama

    发明人： Naoki Yokoyama

    IPC分类号： H01L29/80 ,  H01L21/331 ,  H01L29/205 ,  H01L29/68 ,  H01L29/73 ,  H01L29/772

    CPC分类号： H01L29/7722 ,  H01L29/205

    摘要： A permeable base transistor includes a conductive type emitter layer; a conductive type base layer provided on the emitter layer, the emitter layer having a wider energy bandgap than the base layer; a conductive type collector layer; comb-shaped or lattice-shaped base electrodes formed adjacent to a heterojunction surface formed by the emitter layer and the base layer, the electrodes are provided through a Schottky junction or an insulating layer to the surrounding emitter, base, and collector layers.

    摘要翻译： 可渗透的基极晶体管包括导电型发射极层; 设置在发射极层上的导电型基极层，发射极层具有比基极层更宽的能量带隙; 导电型集电体层; 与由发射极层和基极层形成的异质结表面相邻形成的梳状或格子状的基极，电极通过肖特基结或绝缘层提供到周围的发射极，基极和集电极层。

    Logic circuit using resonant-tunneling transistor
    10.
    发明授权
    Logic circuit using resonant-tunneling transistor 失效
    使用谐振隧道晶体管的逻辑电路

    公开(公告)号：US4849934A

    公开(公告)日：1989-07-18

    申请号：US918300

    申请日：1986-10-10

    申请人： Naoki Yokoyama ,  Toshihiko Mori

    发明人： Naoki Yokoyama ,  Toshihiko Mori

    IPC分类号： G11C11/36 ,  G11C11/39 ,  H03K3/36 ,  H03K23/00

    CPC分类号： B82Y10/00 ,  G11C11/36 ,  G11C11/39 ,  H03K23/00 ,  H03K3/36 ,  G11C2211/5614

    摘要： A logic circuit including a resonant-tunneling transistor having a superlattice containing at least one quantum well layer, and a constant current source operatively connected between a base and an emitter of the transistor and supplying a constant current to said base. The transistor has a differential negative-resistance characteristic with at least one resonant point in a relationship between a current flowing in the base and a voltage between the base and emitter, and having at least two stable base current values at both sides of the resonant point on the characteristic, defined by the changeable base.multidot.emitter voltage. By supplying the base.multidot.emitter voltage having an amplitude of at least two amplitudes corresponding to the stable base current values, the transistor holds data corresponding to the base.multidot.emitter voltage.

    摘要翻译： 一种包括具有包含至少一个量子阱层的超晶格的谐振隧道晶体管的逻辑电路，以及可操作地连接在所述晶体管的基极和发射极之间的恒流源，并向所述基极提供恒定电流。 晶体管具有差分负电阻特性，其具有在基极中流动的电流与基极和发射极之间的电压之间的关系中的至少一个谐振点，并且在谐振点的两侧具有至少两个稳定的基极电流值 基于特征，由可变的基极电压定义。 通过提供具有对应于稳定的基极电流值的至少两个幅度的幅度的基极发射器电压，晶体管保持对应于基极发射极电压的数据。