公开(公告)号：US09112088B2

公开(公告)日：2015-08-18

申请号：US13642736

申请日：2011-04-22

申请人： Koichiro Niira ,  Norikazu Ito ,  Shinichiro Inaba

发明人： Koichiro Niira ,  Norikazu Ito ,  Shinichiro Inaba

IPC分类号： H01L21/00 ,  H01L31/076 ,  C23C16/455 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/20

CPC分类号： H01L31/076 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： Disclosed is a method for manufacturing a thin-film solar cell using plasma between a couple of parallel electrodes. In the method, a base member is placed in a chamber between a first electrode and a second electrode facing each other. A hydrogen gas is heated, and thus heated hydrogen gas and a silicon-based gas are introduced into a space between the first electrode and the second electrode. A ratio of a flow rate of the heated hydrogen gas to that of the silicon-based gas is at least 25 and no more than 58. A plasma is generated between the first electrode and the second electrode by applying high-frequency power to the second electrode while a pressure in the chamber is 1000 Pa or higher, and an optically active layer containing crystalline silicon is deposited on the base material.

摘要翻译： 公开了一种使用等离子体在一对平行电极之间制造薄膜太阳能电池的方法。 在该方法中，将基底构件放置在彼此面对的第一电极和第二电极之间的室中。 氢气被加热，因此加热的氢气和硅基气体被引入到第一电极和第二电极之间的空间中。 加热后的氢气与硅系气体的流量的比例为25以上且58以下。通过向第2电极施加高频电力，在第1电极与第2电极之间产生等离子体 电极，同时室内的压力为1000Pa以上，并且在基材上沉积含有结晶硅的光学活性层。

公开(公告)号：US20120235268A1

公开(公告)日：2012-09-20

申请号：US13512860

申请日：2010-11-30

申请人： Koichiro Niira ,  Norikazu Ito ,  Hiroki Okui ,  Shinichiro Inaba

发明人： Koichiro Niira ,  Norikazu Ito ,  Hiroki Okui ,  Shinichiro Inaba

IPC分类号： H01L31/0232 ,  H01L31/20

CPC分类号： H01L31/0547 ,  H01L31/048 ,  H01L31/068 ,  H02S40/22 ,  Y02E10/52 ,  Y02E10/547

摘要： A photoelectric conversion module comprises: a substrate having a first surface on which a light is incident and a second surface located at the opposite side of the first surface; a photoelectric conversion element provided on the second surface of the substrate; a light-transmitting member provided on the photoelectric conversion element; and a reflecting member provided on the light-transmitting member and configured to reflect a light having transmitted through the light-transmitting member. The reflecting member comprises an inclined light reflection surface that allows a light reflected from the reflecting member to be totally reflected at the first surface of the substrate.

摘要翻译： 光电转换模块包括：具有入射光的第一表面的基板和位于第一表面的相对侧的第二表面; 设置在所述基板的第二表面上的光电转换元件; 设置在所述光电转换元件上的透光构件; 以及设置在所述透光部件上并被配置为反射透过所述透光部件的光的反射部件。 反射构件包括倾斜光反射表面，其允许从反射构件反射的光在基板的第一表面处被全反射。

公开(公告)号：US20120171849A1

公开(公告)日：2012-07-05

申请号：US13390927

申请日：2010-09-24

申请人： Norikazu Ito ,  Shinichiro Inaba ,  Hiroshi Matsui ,  Koichiro Niira

发明人： Norikazu Ito ,  Shinichiro Inaba ,  Hiroshi Matsui ,  Koichiro Niira

IPC分类号： H01L21/203 ,  C23C16/50

CPC分类号： C23C16/5096 ,  H01L31/18

摘要： In order to form a high quality film without causing in-plane nonuniformity in film quality, an apparatus for forming deposited film according to an aspect of the present invention includes: a chamber; a first electrode located in the chamber; a second electrode that is located in the chamber with a predetermined spacing from the first electrode and includes a plurality of supply parts configured to supply material gases; an introduction path connected to the supply parts, through which the material gases are introduced; a heater located in the introduction path; and a cooling mechanism configured to cool the second electrode.

摘要翻译： 为了形成高质量的膜而不会导致膜质量的平面不均匀，根据本发明的一个方面的沉积膜形成装置包括：室; 位于所述腔室中的第一电极; 位于所述腔室中的与所述第一电极具有预定间隔的第二电极，并且包括构造成供应材料气体的多个供应部件; 连接到供应部件的引入路径，通过该引入路径引入材料气体; 位于引入路径中的加热器; 以及构造成冷却第二电极的冷却机构。

公开(公告)号：US08703586B2

公开(公告)日：2014-04-22

申请号：US13390927

申请日：2010-09-24

申请人： Norikazu Ito ,  Shinichiro Inaba ,  Hiroshi Matsui ,  Koichiro Niira

发明人： Norikazu Ito ,  Shinichiro Inaba ,  Hiroshi Matsui ,  Koichiro Niira

IPC分类号： H01L21/205 ,  C23C16/50

CPC分类号： C23C16/5096 ,  H01L31/18

摘要： In order to form a high quality film without causing in-plane nonuniformity in film quality, an apparatus for forming deposited film according to an aspect of the present invention includes: a chamber; a first electrode located in the chamber; a second electrode that is located in the chamber with a predetermined spacing from the first electrode and includes a plurality of supply parts configured to supply material gases; an introduction path connected to the supply parts, through which the material gases are introduced; a heater located in the introduction path; and a cooling mechanism configured to cool the second electrode.

摘要翻译： 为了形成高质量的膜而不会导致膜质量的平面不均匀，根据本发明的一个方面的沉积膜形成装置包括：室; 位于所述腔室中的第一电极; 位于所述腔室中的与所述第一电极具有预定间隔的第二电极，并且包括构造成供应材料气体的多个供应部件; 连接到供应部件的引入路径，通过该引入路径引入材料气体; 位于引入路径中的加热器; 以及构造成冷却第二电极的冷却机构。

公开(公告)号：US20130040414A1

公开(公告)日：2013-02-14

申请号：US13642736

申请日：2011-04-22

申请人： Koichiro Niira ,  Norikazu Ito ,  Shinichiro Inaba

发明人： Koichiro Niira ,  Norikazu Ito ,  Shinichiro Inaba

IPC分类号： H01L31/18

CPC分类号： H01L31/076 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： Disclosed is a method for manufacturing a thin-film solar cell using plasma between a couple of parallel electrodes. In the method, a base member is placed in a chamber between a first electrode and a second electrode facing each other. A hydrogen gas is heated, and thus heated hydrogen gas and a silicon-based gas are introduced into a space between the first electrode and the second electrode. A ratio of a flow rate of the heated hydrogen gas to that of the silicon-based gas is at least 25 and no more than 58. A plasma is generated between the first electrode and the second electrode by applying high-frequency power to the second electrode while a pressure in the chamber is 1000 Pa or higher, and an optically active layer containing crystalline silicon is deposited on the base material.

摘要翻译： 公开了一种使用等离子体在一对平行电极之间制造薄膜太阳能电池的方法。 在该方法中，将基底构件放置在彼此面对的第一电极和第二电极之间的室中。 氢气被加热，因此加热的氢气和硅基气体被引入到第一电极和第二电极之间的空间中。 加热后的氢气与硅系气体的流量的比例为25以上且58以下。通过向第2电极施加高频电力，在第1电极与第2电极之间产生等离子体 电极，同时室内的压力为1000Pa以上，并且在基材上沉积含有结晶硅的光学活性层。

公开(公告)号：US20110036394A1

公开(公告)日：2011-02-17

申请号：US12866011

申请日：2009-02-06

申请人： Koichiro Niira ,  Takehiro Nishimura ,  Norikazu Ito ,  Shinichiro Inaba

发明人： Koichiro Niira ,  Takehiro Nishimura ,  Norikazu Ito ,  Shinichiro Inaba

IPC分类号： H01L31/105 ,  H01L31/18

CPC分类号： H01L31/03921 ,  C23C16/4488 ,  C23C16/50 ,  H01L21/2257 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/077 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： Provided is a superstrate type a-Si:H thin film solar cell of which the device characteristics are improved as compared with conventional ones. The solar cell device is manufactured by a process comprising depositing phosphorus on a transparent conductive film formed on a transparent substrate and sequentially forming a p-type layer, an i-type layer, and an n-type layer which are formed of a-Si:H on the transparent conductive film by a plasma CVD method. The phosphorus is deposited, for example, by plasmatization of phosphorus-containing gas. Alternatively, the phosphorus is deposited by etching a phosphorus source provided in a margin region where a plasma excitation voltage is applied but no transparent substrate is placed, with hydrogen plasma at the start of the formation of the p-type layer by the plasma CVD method. Preferably, the deposition of phosphorus is controlled so that the arithmetic average value (ΔCav) of the concentration difference between boron and phosphorus within a range of diffusion of boron in the i-type layer may be 1.1×1017(cm−3)≦ΔCav≦1.6×1017(cm−3) or less.

摘要翻译： 提供与常规的相比，器件特性得到改善的覆盖型a-Si：H薄膜太阳能电池。 太阳能电池器件通过以下工艺制造，该方法包括在形成于透明衬底上的透明导电膜上沉积磷并依次形成由a-Si形成的p型层，i型层和n型层 ：H通过等离子体CVD法在透明导电膜上。 磷例如通过含磷气体的等离子体化而沉积。 或者，通过蚀刻在施加等离子体激发电压的边缘区域而不设置透明衬底的磷源，通过等离子体CVD法形成p型层开始时的氢等离子体来沉积磷 。 优选地，控制磷的沉积，使得在i型层中的硼扩散范围内的硼和磷之间的浓度差的算术平均值（＆Dgr; C av）可以是1.1×10 17（cm -3） ＆nlE;＆Dgr; Cav＆nlE; 1.6×1017（cm-3）以下。

公开(公告)号：US09206513B2

公开(公告)日：2015-12-08

申请号：US13510914

申请日：2010-11-22

申请人： Norikazu Ito ,  Koichiro Niira ,  Shinichiro Inaba

发明人： Norikazu Ito ,  Koichiro Niira ,  Shinichiro Inaba

IPC分类号： C23C14/26 ,  C23C16/455 ,  H01J37/32 ,  C23C16/24 ,  C23C16/44 ,  C23C16/452 ,  C23C16/505 ,  H01L21/02 ,  H01L31/18 ,  H01L31/20

CPC分类号： C23C16/45574 ,  C23C16/24 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45563 ,  C23C16/505 ,  H01J37/3244 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02P70/521

摘要： First and second electrodes are apart from each other in a chamber. Plates are disposed on a substrate in the second electrode. Each of the plates comprises first and second parts for supplying first and second gas to a space between the first and second electrodes, respectively, a first supply path for first gas connected to the first part, and a second supply path for second gas connected to the second part. The substrate comprises a heater for the first gas, a first introducing path for introducing the first gas to the first supply path, and a second introducing path for introducing the second gas to the second supply path. The second supply path comprises a mainstream part without the second part and branch parts with the second part. A connecting portion of the second introducing path and the mainstream part is positioned in an adjacent portion of the plates.

摘要翻译： 第一和第二电极在腔室中彼此分开。 板被设置在第二电极中的基板上。 每个板包括用于将第一和第二气体分别供应到第一和第二电极之间的空间的第一和第二部分，用于连接到第一部分的第一气体的第一供应路径和用于连接到第一部分的第二气体的第二供应路径 第二部分。 基板包括用于第一气体的加热器，用于将第一气体引入第一供应路径的第一引入路径和用于将第二气体引入第二供应路径的第二引入路径。 第二供应路径包括没有第二部分的主流部分和具有第二部分的分支部分。 第二引入路径和主流部分的连接部分位于板的相邻部分中。

公开(公告)号：US20120228129A1

公开(公告)日：2012-09-13

申请号：US13510914

申请日：2010-11-22

申请人： Norikazu Ito ,  Koichiro Niira ,  Shinichiro Inaba

发明人： Norikazu Ito ,  Koichiro Niira ,  Shinichiro Inaba

IPC分类号： C23C16/50 ,  C23C14/34 ,  C23C16/24

CPC分类号： C23C16/45574 ,  C23C16/24 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45563 ,  C23C16/505 ,  H01J37/3244 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02P70/521

摘要： First and second electrodes are apart from each other in a chamber. Plates are disposed on a substrate in the second electrode. Each of the plates comprises first and second parts for supplying first and second gas to a space between the first and second electrodes, respectively, a first supply path for first gas connected to the first part, and a second supply path for second gas connected to the second part. The substrate comprises a heater for the first gas, a first introducing path for introducing the first gas to the first supply path, and a second introducing path for introducing the second gas to the second supply path. The second supply path comprises a mainstream part without the second part and branch parts with the second part. A connecting portion of the second introducing path and the mainstream part is positioned in an adjacent portion of the plates.

摘要翻译： 第一和第二电极在腔室中彼此分开。 板被设置在第二电极中的基板上。 每个板包括用于将第一和第二气体分别供应到第一和第二电极之间的空间的第一和第二部分，用于连接到第一部分的第一气体的第一供应路径和用于连接到第一部分的第二气体的第二供应路径 第二部分。 基板包括用于第一气体的加热器，用于将第一气体引入第一供应路径的第一引入路径和用于将第二气体引入第二供应路径的第二引入路径。 第二供应路径包括没有第二部分的主流部分和具有第二部分的分支部分。 第二引入路径和主流部分的连接部分位于板的相邻部分中。

公开(公告)号：US20110135843A1

公开(公告)日：2011-06-09

申请号：US13056112

申请日：2009-07-29

申请人： Koichiro Niira ,  Norikazu Ito ,  Sinichiro Inaba ,  Hiroshi Matsui

发明人： Koichiro Niira ,  Norikazu Ito ,  Sinichiro Inaba ,  Hiroshi Matsui

IPC分类号： C23C16/50 ,  C23C16/455

CPC分类号： H01L31/075 ,  C23C16/24 ,  C23C16/45574 ,  C23C16/509 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： In order to form a high-quality Si-based film at high speed, for example, a deposited film forming device according to one aspect of the present invention includes: a chamber; a first electrode arranged in the chamber; and a second electrode arranged in the chamber and spaced a certain distance from the first electrode. The second electrode includes first and second supplying parts. The first supplying part supplies a first material gas and generates hollow cathode discharge. The second supplying part supplies a second material gas higher in decomposition rate than the first material gas.

摘要翻译： 为了高速形成高质量的Si系膜，例如，本发明的一方面的沉积膜形成装置包括：室; 布置在所述腔室中的第一电极; 以及布置在所述室中并与所述第一电极隔开一定距离的第二电极。 第二电极包括第一和第二供电部分。 第一供应部件供应第一原料气体并产生空心阴极放电。 第二供应部件提供比第一原料气体更高分解率的第二材料气体。

公开(公告)号：US20140014175A1

公开(公告)日：2014-01-16

申请号：US14008807

申请日：2012-03-29

申请人： Norikazu Ito ,  Akira Murao ,  Makoto Onodera ,  Takeshi Ito ,  Shinichiro Inaba

发明人： Norikazu Ito ,  Akira Murao ,  Makoto Onodera ,  Takeshi Ito ,  Shinichiro Inaba

IPC分类号： H01L31/0216

CPC分类号： H01L31/02167 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/1868 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell element and a solar cell module are disclosed. The solar cell element includes a polycrystalline silicon substrate and an aluminum oxide layer on the p-type semiconductor layer. The polycrystalline silicon substrate includes a p-type semiconductor layer located at the uppermost position. The aluminum oxide layer is primarily amorphous. The solar cell module includes the above-mentioned solar cell element.

摘要翻译： 公开了太阳能电池元件和太阳能电池模块。 太阳能电池元件包括多晶硅基板和p型半导体层上的氧化铝层。 多晶硅衬底包括位于最上位置的p型半导体层。 氧化铝层主要是无定形的。 太阳能电池模块包括上述太阳能电池元件。