Abstract:
The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
Abstract:
The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
Abstract:
The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
Abstract:
The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
Abstract:
A multi-pixel display device with an integrated circuit, a plurality of light-emitting semiconductor chips disposed on the integrated circuit, a display area having a plurality of pixels, each of the light-emitting semiconductor chips being associated with one of the pixels, a light-directing element disposed between the plurality of light-emitting semiconductor chips and the display area and adapted to direct the light of each light-emitting semiconductor chip from the plurality of light-emitting semiconductor chips to its associated pixel.
Abstract:
A radiation-emitting optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a radiation passage surface, through which light produced during the operation of the semiconductor component passes, a first barrier layer arranged on a top side of the radiation passage surface and in direct contact with the radiation passage surface, a conversion element arranged on the top side of the first barrier layer, a second barrier layer arranged on the top side of the conversion element and on the top side of the first barrier layer, wherein the first barrier layer and the second barrier layer together completely enclose the conversion element, and wherein the first barrier layer and the second barrier layer are in direct contact with each other at some points.
Abstract:
The invention relates to a lighting module (1) comprising an assembly body (3) extending between a rear side (31) and a front side (30) opposite the rear side, and comprising a plurality of semiconductor components (2) provided for generating radiation, wherein: the assembly body has a plurality of recesses (35) on the rear side, in which the semiconductor components are arranged; the assembly body is permeable to the radiation generated in the semiconductor components, and said radiation passes out of the front side of the assembly body; a contact layer (5) is arranged on the rear side of the assembly body, to which the semiconductor components are connected in an electrically conductive manner via connecting lines; and a reflector layer (6) is arranged on the rear side of the assembly body, said reflector layer entirely covering at least the recesses.
Abstract:
Disclosed is a conversion element (100). The conversion element (100) comprises: a conversion coating (16), which contains a wavelength-converting conversion material; a first encapsulation coating (30) on a first main surface (20) of the conversion coating, said first encapsulation coating having a thickness of between 10 μm and 500 μm; and a second encapsulation coating (32) on a second main surface (22) of the conversion coating, said second encapsulation coating having a thickness of between 0.1 μm and 20 μm. Also disclosed are an optoelectronic semiconductor component (200) and a method for producing conversion elements.
Abstract:
The invention relates to a semiconductor component (1) comprising: a plurality of semiconductor chips (2), each having a semiconductor layer sequence (200) with an active region (20) for generating radiation; a radiation output side (10) that runs parallel to the active regions (20); a mounting side surface (11) which is provided for securing the semiconductor component, and which runs in a transverse or perpendicular direction to the radiation output side; a moulded body (4) which is shaped in places on the semiconductor chips, and which at least partially forms the mounting side surface; and a contact structure (50) which is arranged on the moulded body, and which connects at least two semiconductor chips of the plurality of semiconductor chips in an electrically conductive manner. The invention also relates to a lighting device (9) and to a method for producing a semiconductor component.
Abstract:
The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.