摘要:
A static memory cell is connected with word lines and data lines. First and second switches are connected in series between a data line and an output circuit. A sense amplifier has an input/output terminal connected to a common connection point of the said first and second switches. The first switch is turned off in synchronism with commencing operation of the sense amplifier such that the parasitic capacitance of the data line as viewed from the sense amplifier decreases. The second switching means is turned on a predetermined time later in order to transmit the output signal of the sense amplifier to the output circuit.
摘要:
A static memory cell is connected with word lines and data lines. First and second switches are connected in series between a data line and on output circuit. A sense amplifier has an input/output terminal connected to a common connection point of the said first and second switches. The first switch is turned off in synchronism with commencing operation of the sense amplifier such that the parasitic capacitance of the data line as viewed from the sense amplifier decreases. The second switching means is turned on a predetermined time later in order to transmit the output signal of the sense amplifier to the output circuit.
摘要:
A non-shared system with respect to an outside and an inside cache in a multi-processor system has multi-layer hierarchical cache. An invalidation address on a main memory address bus 31 in company with the rewriting of a main memory 30 is transmitted via a first and a second path 35, 36 to inside caches 11,21 so as to invalidate these inside caches 11, 21. The invalidation address is transmitted to the outside caches 12, 22 via the bidirectional connections between the main memory address bus 31 and outside caches 12, 22 so as to invalidate these outside caches 12, 22. It is extremely improbable for the address of access for writing to the transmitted to the main memory address bus 31 because the outside caches 12, 22 are operated in either copy back or write once system. As a result, even though the invalidation address is transmitted to the outside caches 12, 22 via the bidirectional connections between the main memory address bus 31 and the outside caches 12, 22, it is extremely improbably for the address of access for writing to conflict with a signal on the bidirectional connection.
摘要:
In a cache memory setup, a buffer register is provided to accommodate the data read from a data memory. Between the buffer register and the data memory is connected a selector. This selector selectively transfers to the buffer register part of the data read from the data memory. The remaining part of the data is replaced with appropriate data for transfer to the buffer register. This arrangement provides the cache memory with a partial-write function.
摘要:
In a cache memory setup, a buffer register is provided to accommodate the data read from a data memory. Between the buffer register and the data memory is connected a selector. This selector selectively transfers to the buffer register part of the data read from the data memory. The remaining part of the data is replaced with appropriate data for transfer to the buffer register. This arrangement provides the cache memory with a partial-write function.
摘要:
A main memory is subdivided into a shared region to undergo a write access from a plurality of processors and an input/output device and a plurality of private regions to undergo a write access only from the associated processor. Each of the cache devices includes a region discriminating circuit for determining whether an address generated from the processor is to be employed for an access to the shared region or to the private regions. If the access is to be conducted to the shared region, the cache devices operate according to the write-through method. On the other hand, if the access is to be conducted to the private region, the cache devices operate according to the copy-back method. When the processor or the input/output device rewrites data in the shared region of the main memory, the stored data of the shared region in the cache device of the processor is invalidated.
摘要:
Bump electrodes (conductive members) bonded onto lands disposed at a peripheral portion side than terminals (bonding leads) electrically coupled to pads (electrode pads) of a microcomputer chip (semiconductor chip) are sealed with sealing resin (a sealing body). Thereafter, the sealing resin is ground (removed) partially such that a part of each of the bump electrodes is exposed. The step of protruding the part of each of the bump electrodes from a front surface of the sealing resin is performed, after the grinding step.
摘要:
Disclosed is a passenger protection device (12) for a vehicle, which protects a passenger (Mn) sitting on a seat (11) when an external force (Fs) is applied to a side surface (16a) of a vehicle body (16). The passenger protection device has a side support (14). The side support is provided on the side portion of a seat back (46), and supports the upper body (Bu) of the passenger. The side support has a deformable portion (47). The deformable portion allows the side support to be deformed by an external force having a predetermined value or more.
摘要:
Disclosed is an adhesive film having high dimensional stability which can be suitably used for two layer FPCs. Specifically, disclosed is an adhesive sheet composed of an insulting layer and an adhesive layer arranged on one side or both sides of the insulating layer. This adhesive sheet is characterized in that the insulating layer has a ratio E′2/E′1 between the storage elasticity modulus E′1 at 25° C. and the storage elasticity modulus E′2 at 380° C. of not more than 0.2 and a coefficient of thermal expansion in the MD direction of 5-15 ppm at 100-200° C. It is further characterized in that the change in the coefficient of thermal expansion of the adhesive sheet at 100-250° C. after heat treatment at 380° C. for 30 second under tension of 20 kg/m is not more than 2.5 ppm in the tension direction and not more than 10 ppm in the direction perpendicular to the tension direction.
摘要:
Provided is a substrate for a thin-film photoelectric conversion device which makes it possible to produce the device having improved characteristics at low cost and high productivity. The substrate includes a transparent base member, with a transparent underlying layer and a transparent electrode layer successively stacked on one main surface of the transparent base member. The underlying layer includes transparent insulating fine particles and transparent binder, and the particles are dispersed to cover the one main surface with a coverage factor of particles—ranging from 30% or more to less than 80%. An antireflection layer is provided on the other main surface of the transparent base. The antireflection layer includes transparent insulating fine particles and transparent binder, and the particles are dispersed to cover the other main surface with a coverage factor greater than the underlying layer. The transparent electrode layer contains zinc oxide deposited by low-pressure CVD method.