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公开(公告)号:US20170263587A1
公开(公告)日:2017-09-14
申请号:US15609242
申请日:2017-05-31
Applicant: Renesas Electronics Corporation
Inventor: Yukihiro SATO , Katsuhiko FUNATSU , Takamitsu KANAZAWA , Masahiro KOIDO , Hiroyoshi TAYA
IPC: H01L25/065 , H01L21/48 , H01L23/00 , H01L23/049 , H01L23/498 , H01L25/07 , H01L23/24 , H01L23/373 , H01L25/16 , H01L25/18 , H02M7/219
CPC classification number: H01L25/0655 , H01L21/4846 , H01L23/049 , H01L23/24 , H01L23/3735 , H01L23/49838 , H01L23/49844 , H01L23/49861 , H01L24/09 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/16 , H01L25/18 , H01L2224/0603 , H01L2224/0905 , H01L2224/32225 , H01L2224/45014 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/48227 , H01L2224/4846 , H01L2224/48472 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2224/92247 , H01L2924/13055 , H01L2924/13091 , H01L2924/16151 , H01L2924/16251 , H01L2924/181 , H02M7/219 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
Abstract: Reduction in reliability of a semiconductor device is suppressed. A semiconductor device includes a plurality of metal patterns formed on a ceramic substrate, and a plurality of semiconductor chips mounted on the plurality of metal patterns. Also, the plurality of metal patterns include metal patterns MPH and MPU which face each other. In addition, a region which is provided between these metal patterns MPH and MPU and which is exposed from the plurality of metal patterns extends so as to zigzag along an extending direction of the metal pattern MPH.
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公开(公告)号:US20160043042A1
公开(公告)日:2016-02-11
申请号:US14919597
申请日:2015-10-21
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor: Katsuhiko FUNATSU , Yukihiro SATO , Yuichi YATO , Tomoaki UNO
CPC classification number: H01L23/564 , H01L21/4825 , H01L21/4828 , H01L21/561 , H01L21/565 , H01L21/78 , H01L23/3107 , H01L23/49503 , H01L23/4952 , H01L23/49524 , H01L23/49537 , H01L23/49541 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/34 , H01L24/36 , H01L24/40 , H01L24/97 , H01L2224/05554 , H01L2224/0603 , H01L2224/40095 , H01L2224/40245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48137 , H01L2224/48247 , H01L2224/73221 , H01L2224/83801 , H01L2224/84801 , H01L2924/12042 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
Abstract: A semiconductor device includes a first chip mounting portion, a first semiconductor chip arranged over the first chip mounting portion, a first pad formed in a surface of the first semiconductor chip, a first lead which serves as an external coupling terminal, a first conductive member which electrically couples the first pad and the first lead, and a sealing body which seals a part of the first chip mounting portion, the first semiconductor chip, a part of the first lead, and the first conductive member. The first conductive member includes a first plate-like portion, and a first support portion formed integrally with the first plate-like portion. An end of the first support portion is exposed from the sealing body, and the first support portion is formed with a first bent portion.
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公开(公告)号:US20160233204A1
公开(公告)日:2016-08-11
申请号:US15133032
申请日:2016-04-19
Applicant: Renesas Electronics Corporation
Inventor: Katsuhiko FUNATSU , Tomoaki UNO , Toru UEGURI , Yukihiro SATO
IPC: H01L25/00 , H01L21/56 , H01L23/00 , H01L21/78 , H01L23/31 , H01L23/495 , H01L21/48 , H01L21/683
CPC classification number: H01L25/50 , H01L21/4835 , H01L21/4839 , H01L21/56 , H01L21/561 , H01L21/6836 , H01L21/78 , H01L23/3107 , H01L23/495 , H01L23/49503 , H01L23/49537 , H01L23/49541 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L24/34 , H01L24/36 , H01L24/37 , H01L24/40 , H01L24/83 , H01L24/97 , H01L25/18 , H01L2221/68327 , H01L2221/68331 , H01L2224/05554 , H01L2224/0603 , H01L2224/29139 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/92247 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: To improve the reliability in applying a tape to the rear surface of a substrate while securing the heat resistance of the tape applied to the rear surface of the substrate. There is a gap between a bottom surface of a ditch provided in a support member and an upper surface of a driver IC chip. On the other hand, the upper surface side of a lead frame is supported by the support member so that the bottom surface of the ditch contacts the upper surface of a Low-MOS clip mounted over a Low-MOS chip. Thus, even in a state where the driver IC chip and the Low-MOS chip are mounted on the upper surface side of the leadframe, the tape can be reliably applied to the rear surface of the lead frame (in particular, to the rear surface of the product region).
Abstract translation: 为了提高将带施加到基板的后表面上的带的可靠性,同时确保施加到基板的后表面的带的耐热性。 在支撑构件中设置的沟槽的底表面和驱动器IC芯片的上表面之间存在间隙。 另一方面,引线框架的上表面侧由支撑构件支撑,使得沟槽的底表面接触安装在低MOS芯片上的低MOS片的上表面。 因此,即使在驱动IC芯片和Low-MOS芯片安装在引线框架的上表面侧的状态下,也可以将带子可靠地施加到引线框架的后表面(特别是到后表面 的产品区域)。
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公开(公告)号:US20160093594A1
公开(公告)日:2016-03-31
申请号:US14863894
申请日:2015-09-24
Applicant: Renesas Electronics Corporation
Inventor: Katsuhiko FUNATSU , Yukihiro SATO , Takamitsu KANAZAWA , Masahiro KOIDO , Hiroyoshi TAYA
IPC: H01L25/07 , H01L23/00 , H01L23/498
CPC classification number: H01L23/49838 , H01L21/52 , H01L21/54 , H01L23/02 , H01L23/04 , H01L23/053 , H01L23/057 , H01L23/10 , H01L23/12 , H01L23/15 , H01L23/16 , H01L23/3735 , H01L23/495 , H01L23/49541 , H01L23/49548 , H01L23/498 , H01L23/49811 , H01L23/49844 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L25/071 , H01L25/072 , H01L29/41708 , H01L2224/05553 , H01L2224/0603 , H01L2224/29101 , H01L2224/32225 , H01L2224/45014 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48101 , H01L2224/48106 , H01L2224/4813 , H01L2224/48227 , H01L2224/4846 , H01L2224/48472 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/1304 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H02S40/32 , H01L2924/00012 , H01L2924/00 , H01L2224/05599 , H01L2924/014 , H01L2224/85399
Abstract: A semiconductor device includes a plurality of metal patterns formed on a ceramic substrate, and a semiconductor chip mounted on some of the plurality of metal patterns. Also, a plurality of hollow portions are formed in peripheral portions of the plurality of metal patterns. In addition, the plurality of hollow portions are not formed in a region overlapping the semiconductor chip in the plurality of metal patterns. Furthermore, the plurality of hollow portions are provided in a plurality of metal patterns arranged at a position closest to the peripheral portion of the top surface of the ceramic substrate among the plurality of metal patterns.
Abstract translation: 半导体器件包括形成在陶瓷衬底上的多个金属图案和安装在多个金属图案中的一些上的半导体芯片。 此外,在多个金属图案的周边部分中形成多个中空部分。 此外,多个中空部分不形成在与多个金属图案中的半导体芯片重叠的区域中。 此外,多个中空部分设置在多个金属图案中,多个金属图案布置在多个金属图案中最靠近陶瓷基板的顶表面的周边部分的位置。
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公开(公告)号:US20170141086A1
公开(公告)日:2017-05-18
申请号:US15420410
申请日:2017-01-31
Applicant: Renesas Electronics Corporation
Inventor: Katsuhiko FUNATSU , Yukihiro SATO , Takamitsu KANAZAWA , Masahiro KOIDO , Hiroyoshi TAYA
IPC: H01L25/07 , H01L23/10 , H01L23/00 , H01L29/417 , H01L21/54 , H01L23/16 , H01L23/498 , H01L23/053 , H01L21/52
CPC classification number: H01L23/49838 , H01L21/52 , H01L21/54 , H01L23/02 , H01L23/04 , H01L23/053 , H01L23/057 , H01L23/10 , H01L23/12 , H01L23/15 , H01L23/16 , H01L23/3735 , H01L23/495 , H01L23/49541 , H01L23/49548 , H01L23/498 , H01L23/49811 , H01L23/49844 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L25/071 , H01L25/072 , H01L29/41708 , H01L2224/05553 , H01L2224/0603 , H01L2224/29101 , H01L2224/32225 , H01L2224/45014 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48101 , H01L2224/48106 , H01L2224/4813 , H01L2224/48227 , H01L2224/4846 , H01L2224/48472 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/1304 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H02S40/32 , H01L2924/00012 , H01L2924/00 , H01L2224/05599 , H01L2924/014 , H01L2224/85399
Abstract: A semiconductor device includes a plurality of metal patterns formed on a ceramic substrate, and a semiconductor chip mounted on some of the plurality of metal patterns. Also, a plurality of hollow portions are formed in peripheral portions of the plurality of metal patterns. In addition, the plurality of hollow portions are not formed in a region overlapping the semiconductor chip in the plurality of metal patterns. Furthermore, the plurality of hollow portions are provided in a plurality of metal patterns arranged at a position closest to the peripheral portion of the top surface of the ceramic substrate among the plurality of metal patterns.
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公开(公告)号:US20160093589A1
公开(公告)日:2016-03-31
申请号:US14863837
申请日:2015-09-24
Applicant: Renesas Electronics Corporation
Inventor: Yukihiro SATO , Katsuhiko FUNATSU , Takamitsu KANAZAWA , Masahiro KOIDO , Hiroyoshi TAYA
IPC: H01L25/065 , H01L23/00
CPC classification number: H01L25/0655 , H01L21/4846 , H01L23/049 , H01L23/24 , H01L23/3735 , H01L23/49838 , H01L23/49844 , H01L23/49861 , H01L24/09 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/16 , H01L25/18 , H01L2224/0603 , H01L2224/0905 , H01L2224/32225 , H01L2224/45014 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/48227 , H01L2224/4846 , H01L2224/48472 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2224/92247 , H01L2924/13055 , H01L2924/13091 , H01L2924/16151 , H01L2924/16251 , H01L2924/181 , H02M7/219 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
Abstract: Reduction in reliability of a semiconductor device is suppressed. A semiconductor device includes a plurality of metal patterns formed on a ceramic substrate, and a plurality of semiconductor chips mounted on the plurality of metal patterns. Also, the plurality of metal patterns include metal patterns MPH and MPU which face each other. In addition, a region which is provided between these metal patterns MPH and MPU and which is exposed from the plurality of metal patterns extends so as to zigzag along an extending direction of the metal pattern MPH.
Abstract translation: 抑制半导体器件的可靠性降低。 半导体器件包括形成在陶瓷衬底上的多个金属图案和安装在多个金属图案上的多个半导体芯片。 此外,多个金属图案包括彼此面对的金属图案MPH和MPU。 此外,设置在这些金属图案MPH和MPU之间并且从多个金属图案露出的区域沿着金属图案MPH的延伸方向延伸成锯齿状。
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