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公开(公告)号：US08471280B2
公开(公告)日：2013-06-25
申请号：US12613924
申请日：2009-11-06
IPC分类号： H01L23/29
CPC分类号： H01L33/62 , H01L33/0079 , H01L33/382 , H01L33/60 , H01L33/641 , H01L33/642 , H01L33/647 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： In one embodiment, a flip chip LED is formed with a high density of gold posts extending from a bottom surface of its n-layer and p-layer. The gold posts are bonded to submount electrodes. An underfill material is then molded to fill the voids between the bottom of the LED and the submount. The underfill comprises a silicone molding compound base and about 70-80%, by weight, alumina (or other suitable material). Alumina has a thermal conductance that is about 25 times better than that of the typical silicone underfill, which is mostly silica. The alumina is a white powder. The underfill may also contain about 5-10%, by weight, TiO2 to increase the reflectivity. LED light is reflected upward by the reflective underfill, and the underfill efficiently conducts heat to the submount. The underfill also randomizes the light scattering, improving light extraction. The distributed gold posts and underfill support the LED layers during a growth substrate lift-off process.
摘要翻译： 在一个实施例中，倒装芯片LED形成有从其n层和p层的底表面延伸的高密度的金柱。 金柱结合到底座电极。 然后将底部填充材料模制以填充LED底部和底座之间的空隙。 底部填充物包含硅氧烷模塑料基料和约70-80重量％的氧化铝（或其它合适的材料）。 氧化铝的导热系数比典型的硅胶底部填充物的热导率高出约25倍，这主要是二氧化硅。 氧化铝是白色粉末。 底部填充剂还可以含有约5-10重量％的TiO 2以增加反射率。 LED灯由反射底层填充物向上反射，底部填充物有效地将热量传导到底座。 底部填充物也随机化光散射，改善光提取。 分布式金柱和底层填料在生长衬底剥离过程中支持LED层。
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公开(公告)号：US08507929B2
公开(公告)日：2013-08-13
申请号：US12139999
申请日：2008-06-16
摘要： One or more regions of graded composition are included in a III-P light emitting device, to reduce the Vf associated with interfaces in the device. In accordance with embodiments of the invention, a semiconductor structure comprises a III-P light emitting layer disposed between an n-type region and a p-type region. A graded region is disposed between the p-type region and a GaP window layer. The aluminum composition is graded in the graded region. The graded region may have a thickness of at least 150 nm. In some embodiments, in addition to or instead of a graded region between the p-type region and the GaP window layer, the aluminum composition is graded in a graded region disposed between an etch stop layer and the n-type region.
摘要翻译： III-P发光器件中包括一个或多个渐变成分区域，以减少与器件中的接口相关联的Vf。 根据本发明的实施例，半导体结构包括设置在n型区域和p型区域之间的III-P发光层。 在p型区域和GaP窗口层之间设置分级区域。 铝组合物在分级区域分级。 分级区域可以具有至少150nm的厚度。 在一些实施例中，除了或代替p型区域和GaP窗口层之间的渐变区域之外，铝组合物在设置在蚀刻停止层和n型区域之间的渐变区域中分级。
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3.发明授权公开(公告)号：US07989824B2
公开(公告)日：2011-08-02
申请号：US12766221
申请日：2010-04-23
申请人： Rafael I. Aldaz , James G. Neff
发明人： Rafael I. Aldaz , James G. Neff
IPC分类号： H01L33/38
CPC分类号： H01L33/005 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is formed. A first metal contact is formed on a portion of the n-type region and a second metal contact is formed on a portion of the p-type region. The first and second metal contacts are formed on a same side of the semiconductor structure. A dielectric material is disposed between the first and second metal contacts. The dielectric material is in direct contact with a portion of the semiconductor structure, a portion of the first metal contact, and a portion of the second metal contact. A planar surface is formed including a surface of the first metal contact, a surface of the second metal contact, and a surface of the dielectric material
摘要翻译： 形成包括设置在n型区域和p型区域之间的发光层的半导体结构。 第一金属接触形成在n型区域的一部分上，并且在p型区域的一部分上形成第二金属接触。 第一和第二金属触点形成在半导体结构的同一侧上。 介电材料设置在第一和第二金属触点之间。 电介质材料与半导体结构的一部分，第一金属触点的一部分和第二金属触点的一部分直接接触。 形成包括第一金属触点的表面，第二金属触点的表面和电介质材料的表面的平坦表面
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公开(公告)号：US20220224083A1
公开(公告)日：2022-07-14
申请号：US17705890
申请日：2022-03-28
申请人： Aurelien DAVID , Rafael I. Aldaz
发明人： Aurelien DAVID , Rafael I. Aldaz
摘要： Optical devices and methods of manufacturing and operating such optical devices. In an embodiment, an optical device includes a substrate, a multi-layer structure having a first surface in contact with a first surface of the substrate, a first mirror disposed over a second surface of the multi-layer structure, a second mirror disposed over a second surface of the substrate, an intermediate mirror within the multi-layer structure, and an optical gain structure within the multi-layer structure. The device may include a first optically resonant cavity within the multi-layer structure, bounded by the first mirror and the intermediate mirror, where the first optically resonant cavity includes the optical gain structure. The device may further include a second optically resonant cavity, bounded by the first and second mirrors, where the second optically resonant cavity includes the first optically resonant cavity, the second optically reflective layer, and the substrate.
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公开(公告)号：US20120112161A1
公开(公告)日：2012-05-10
申请号：US13348736
申请日：2012-01-12
IPC分类号： H01L33/06
CPC分类号： H01L33/387 , H01L33/145 , H01L33/20 , H01L33/22 , H01L33/405 , H01L33/46
摘要： A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on a top surface of the semiconductor structure is electrically connected to the other of the n-type region and the p-type region. A mirror is aligned with the top contact. The mirror includes a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer.
摘要翻译： 一种器件包括半导体结构，其包括设置在n型区域和p型区域之间的发光层。 设置在半导体结构的底表面上的底部触点与n型区域和p型区域中的一个电连接。 设置在半导体结构的顶表面上的顶部触点与n型区域和p型区域中的另一个电连接。 镜子与顶部触点对齐。 反射镜包括在半导体结构中形成的沟槽和设置在沟槽中的反射材料，其中沟槽延伸穿过发光层。
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公开(公告)号：US20120187372A1
公开(公告)日：2012-07-26
申请号：US13423625
申请日：2012-03-19
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to the mount via the contacts. The growth substrate is removed from the semiconductor structure and the thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 μm in some embodiments, less than 10 μm in some embodiments. The top side of the semiconductor structure may be textured.
摘要翻译： AlGaInP发光器件形成为薄的倒装芯片器件。 该器件包括包括设置在n型区域和p型区域之间的AlGaInP发光层的半导体结构。 电连接到n型和p型区的N-和p-触点都形成在半导体结构的同一侧上。 半导体结构通过触点连接到安装座。 从半导体结构去除生长衬底，并且省略厚的透明衬底，使得在一些实施例中，器件中的半导体层的总厚度小于15μm，在一些实施例中小于10μm。 半导体结构的顶侧可以是纹理的。
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公开(公告)号：US08168998B2
公开(公告)日：2012-05-01
申请号：US12481021
申请日：2009-06-09
IPC分类号： H01L27/15
CPC分类号： H01L33/507 , H01L33/46 , H01L33/54 , H01L33/56 , H01L33/60 , H01L2224/16225 , H01L2924/00011 , H01L2924/00014 , H01L2924/181 , H01L2933/005 , H01L2933/0058 , H01L2924/00012 , H01L2224/0401
摘要： A light emitting device comprises a flip-chip light emitting diode (LED) die mounted on a submount. The top surface of the submount has a reflective layer. Over the LED die is molded a hemispherical first transparent layer. A low index of refraction layer is then provided over the first transparent layer to provide TIR of phosphor light. A hemispherical phosphor layer is then provided over the low index layer. A lens is then molded over the phosphor layer. The reflection achieved by the reflective submount layer, combined with the TIR at the interface of the high index phosphor layer and the underlying low index layer, greatly improves the efficiency of the lamp. Other material may be used. The low index layer may be an air gap or a molded layer. Instead of a low index layer, a distributed Bragg reflector may be sputtered over the first transparent layer.
摘要翻译： 发光器件包括安装在底座上的倒装芯片发光二极管（LED）裸片。 底座的顶面具有反射层。 在LED模具上模制半球形的第一透明层。 然后在第一透明层上提供低折射率层，以提供荧光灯的TIR。 然后在低折射率层上提供半球形磷光体层。 然后在荧光体层上模制透镜。 由反射底层实现的反射与高折射率荧光体层和底层低折射率层的界面处的TIR相结合，大大提高了灯的效率。 可以使用其他材料。 低折射率层可以是气隙或模制层。 代替低折射率层，分布式布拉格反射器可以溅射在第一透明层上。
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公开(公告)号：US08692286B2
公开(公告)日：2014-04-08
申请号：US11957031
申请日：2007-12-14
CPC分类号： H01L33/30 , H01L33/0079 , H01L33/025
摘要： In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.
摘要翻译： 在本发明的一些实施例中，透明衬底AlInGaP器件包括可以比常规蚀刻停止层更少吸收的蚀刻停止层。 在本发明的一些实施例中，透明衬底AlInGaP器件包括可被配置为给出比常规接合界面更低的正向电压的接合界面。 降低装置中的吸收和/或正向电压可以提高装置的效率。
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公开(公告)号：US08415656B2
公开(公告)日：2013-04-09
申请号：US13348736
申请日：2012-01-12
IPC分类号： H01L
CPC分类号： H01L33/387 , H01L33/145 , H01L33/20 , H01L33/22 , H01L33/405 , H01L33/46
摘要： A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on a top surface of the semiconductor structure is electrically connected to the other of the n-type region and the p-type region. A mirror is aligned with the top contact. The mirror includes a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer.
摘要翻译： 一种器件包括半导体结构，其包括设置在n型区域和p型区域之间的发光层。 设置在半导体结构的底表面上的底部触点与n型区域和p型区域中的一个电连接。 设置在半导体结构的顶表面上的顶部触点与n型区域和p型区域中的另一个电连接。 镜子与顶部触点对齐。 反射镜包括在半导体结构中形成的沟槽和设置在沟槽中的反射材料，其中沟槽延伸穿过发光层。
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公开(公告)号：US08154042B2
公开(公告)日：2012-04-10
申请号：US12770550
申请日：2010-04-29
IPC分类号： H01L33/60
CPC分类号： H01L33/387 , H01L33/145 , H01L33/20 , H01L33/22 , H01L33/405 , H01L33/46
摘要： A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on a top surface of the semiconductor structure is electrically connected to the other of the n-type region and the p-type region. A mirror is aligned with the top contact. The mirror includes a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer.
摘要翻译： 一种器件包括半导体结构，其包括设置在n型区域和p型区域之间的发光层。 设置在半导体结构的底表面上的底部触点与n型区域和p型区域中的一个电连接。 设置在半导体结构的顶表面上的顶部触点与n型区域和p型区域中的另一个电连接。 镜子与顶部触点对齐。 反射镜包括在半导体结构中形成的沟槽和设置在沟槽中的反射材料，其中沟槽延伸穿过发光层。
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