White light devices using non-polar or semipolar gallium containing materials and phosphors
    3.
    发明授权
    White light devices using non-polar or semipolar gallium containing materials and phosphors 有权
    使用非极性或半极性含镓材料和荧光体的白光器件

    公开(公告)号:US08124996B2

    公开(公告)日:2012-02-28

    申请号:US12534829

    申请日:2009-08-03

    IPC分类号: H01L33/00

    摘要: A packaged light emitting device. The device includes a substrate member comprising a surface region and one or more light emitting diode devices overlying the surface region. In a specific embodiment, at least one of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The one or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission of one or more first wavelengths. At least at least one of the light emitting diode devices comprise a quantum well region, which is characterized by an electron wave function and a hole wave function. In a specific embodiment, the electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. In a specific embodiment, the device has a thickness of one or more entities formed overlying the one or more light emitting diode devices. The one or more entities are excited by the substantially polarized emission and emitting electromagnetic radiation of one or more second wavelengths.

    摘要翻译: 封装的发光器件。 该器件包括一个衬底构件,该衬底构件包括表面区域和覆盖在该表面区域上的一个或多个发光二极管器件。 在具体实施例中,发光二极管器件中的至少一个制造在含有半极性或非极性GaN的衬底上。 一个或多个发光二极管器件制造在半极性或非极性的含GaN衬底上发射基本上一个或多个第一波长的极化发射。 至少一个发光二极管器件包括量子阱区,其特征在于电子波函数和空穴波函数。 在具体实施例中,电子波函数和空穴波函数在量子阱区域的预定空间区域内基本上重叠。 在具体实施例中,该装置具有形成在一个或多个发光二极管装置上的一个或多个实体的厚度。 一个或多个实体被基本上极化的发射和发射一个或多个第二波长的电磁辐射激发。

    Surface morphology of non-polar gallium nitride containing substrates
    9.
    发明授权
    Surface morphology of non-polar gallium nitride containing substrates 有权
    非极性含氮化镓衬底的表面形态

    公开(公告)号:US08749030B2

    公开(公告)日:2014-06-10

    申请号:US13621485

    申请日:2012-09-17

    IPC分类号: H01L29/04 H01L33/16

    摘要: Optical devices such as LEDs and lasers are discloses. The devices include a non-polar gallium nitride substrate member having an off-axis non-polar oriented crystalline surface plane. The off-axis non-polar oriented crystalline surface plane can be up to about −0.6 degrees in a c-plane direction and up to about −20 degrees in a c-plane direction in certain embodiments. In certain embodiments, a gallium nitride containing epitaxial layer is formed overlying the off-axis non-polar oriented crystalline surface plane. In certain embodiments, devices include a surface region overlying the gallium nitride epitaxial layer that is substantially free of hillocks.

    摘要翻译: 公开了诸如LED和激光器的光学装置。 这些器件包括具有离轴非极性取向晶体表面的非极性氮化镓衬底构件。 在某些实施例中,离轴非极性取向晶体表面平面在c面方向上可高达约-0.6度,在c面方向上可高达约-20度。 在某些实施例中,形成覆盖离轴非极性取向晶体表面平面的含氮化镓的外延层。 在某些实施例中,器件包括覆盖氮化镓外延层的表面区域,该表面区域基本上不含小丘。

    Gallium nitride based laser dazzling device and method
    10.
    发明授权
    Gallium nitride based laser dazzling device and method 有权
    基于氮化镓的激光耀眼装置及方法

    公开(公告)号:US08509275B1

    公开(公告)日:2013-08-13

    申请号:US12787343

    申请日:2010-05-25

    IPC分类号: H01S5/00

    摘要: A laser dazzler device and method. More specifically, embodiments of the present invention provide laser dazzling devices power by one or more green laser diodes characterized by a wavelength of about 500 nm to 540 nm. In various embodiments, laser dazzling devices according to the present invention include non-polar and/or semi-polar green laser diodes. In a specific embodiment, a single laser dazzling device includes a plurality of green laser diodes. There are other embodiments as well.

    摘要翻译: 激光眩光装置及方法。 更具体地,本发明的实施例通过一个或多个以500nm至540nm波长为特征的绿色激光二极管提供激光耀眼的装置的功率。 在各种实施例中,根据本发明的激光耀斑装置包括非极性和/或半极性绿色激光二极管。 在具体实施例中,单个激光耀眼装置包括多个绿色激光二极管。 还有其它实施例。