-
公开(公告)号：US08828874B2
公开(公告)日：2014-09-09
申请号：US13073582
申请日：2011-03-28
IPC分类号： H01L21/302 , H01L21/461 , C09G1/02 , C09K3/14 , H01L21/02
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/02024
摘要： A method of chemically-mechanically polishing a substrate having a Group III-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a slurry solution including a liquid carrier and an oxidizer including a transition metal or a per-based compound. The slurry solution includes at least one component that reacts with the Group III-nitride surface to form a softened Group III-nitride surface. The Group III-nitride comprising surface is contacted with the slurry composition by a pad to form the softened Group III-nitride surface. The pad is moved relative to the softened Group III-nitride surface, wherein at least a portion of the softened Group III-nitride surface is removed.
摘要翻译： 化学机械抛光具有III族氮化物表面的衬底的方法包括提供化学机械抛光浆料组合物。 浆料组合物包括包含液体载体和包含过渡金属或基于基的化合物的氧化剂的浆液。 浆料溶液包括至少一种与III族氮化物表面反应以形成软化的III族氮化物表面的组分。 含III族氮化物的表面通过焊盘与浆料组合物接触以形成软化的III族氮化物表面。 垫相对于软化的III族氮化物表面移动，其中去除了软化的III族氮化物表面的至少一部分。
-
2.发明申请CHEMICAL MECHANICAL FABRICATION (CMF) FOR FORMING TILTED SURFACE FEATURES 审中-公开用于形成倾斜表面特征的化学机械制造（CMF）公开(公告)号：US20100260977A1
公开(公告)日：2010-10-14
申请号：US12759307
申请日：2010-04-13
CPC分类号： B24B37/042 , H01L31/02366 , H01L31/0543 , Y02E10/52 , Y10T428/24612
摘要： A method of chemical-mechanical fabrication (CMF) for forming articles having tilted surface features. A substrate is provided having a patterned surface including two different layer compositions or a non-planar surface having at least one protruding or recessed feature, or both. The patterned surface are contacted with a polishing pad having a slurry composition, wherein a portion of surface being polished polishes at a faster polishing rate as compared to another portion to form at least one tilted surface feature. The tilted surface feature has at least one surface portion having a surface tilt angle from 3 to 85 degrees and a surface roughness
摘要翻译： 一种用于形成具有倾斜表面特征的制品的化学机械制造（CMF）的方法。 提供了具有包括两个不同层组合物的图案化表面或具有至少一个突出或凹陷特征或两者的非平面表面的衬底。 图案化表面与具有浆料组合物的抛光垫接触，其中抛光表面的一部分与另一部分相比以更快的抛光速率抛光以形成至少一个倾斜表面特征。 倾斜表面特征具有至少一个表面部分，其具有3至85度的表面倾斜角度和3nm rms的表面粗糙度。 倾斜表面特征包括后CMF高仰角部分和限定最大高度（h）的后CMF低仰角部分，其中倾斜表面特征限定最小横向尺寸（r），并且h /r≥0.05 。
-
公开(公告)号：US20120252213A1
公开(公告)日：2012-10-04
申请号：US13073582
申请日：2011-03-28
IPC分类号： H01L21/306
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/02024
摘要： A method of chemically-mechanically polishing a substrate having a Group III-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a slurry solution including a liquid carrier and an oxidizer including a transition metal or a per-based compound. The slurry solution includes at least one component that reacts with the Group III-nitride surface to form a softened Group III-nitride surface. The Group III-nitride comprising surface is contacted with the slurry composition by a pad to form the softened Group III-nitride surface. The pad is moved relative to the softened Group III-nitride surface, wherein at least a portion of the softened Group III-nitride surface is removed.
摘要翻译： 化学机械抛光具有III族氮化物表面的衬底的方法包括提供化学机械抛光浆料组合物。 浆料组合物包括包含液体载体和包含过渡金属或基于基的化合物的氧化剂的浆液。 浆料溶液包括至少一种与III族氮化物表面反应以形成软化的III族氮化物表面的组分。 含III族氮化物的表面通过焊盘与浆料组合物接触以形成软化的III族氮化物表面。 垫相对于软化的III族氮化物表面移动，其中去除了软化的III族氮化物表面的至少一部分。
-
公开(公告)号：US09368367B2
公开(公告)日：2016-06-14
申请号：US12422771
申请日：2009-04-13
申请人： Rajiv K. Singh , Arul Chakkaravarthi Arjunan , Dibakar Das , Deepika Singh , Abhudaya Mishra , Tanjore V. Jayaraman
发明人： Rajiv K. Singh , Arul Chakkaravarthi Arjunan , Dibakar Das , Deepika Singh , Abhudaya Mishra , Tanjore V. Jayaraman
IPC分类号： C09K3/14 , C23F1/14 , H01L21/3105 , C09G1/02 , H01L21/04 , H01L21/306 , H01L21/02
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463 , C23F1/14 , H01L21/02024 , H01L21/0475 , H01L21/30625
摘要： Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness
摘要翻译： 用于使用这种浆料抛光具有碳化硅表面的基材的浆料组合物和化学活化的CMP方法。 在这种方法中，碳化硅表面与CMP浆料组合物接触，CMP浆料组合物包括i）液体载体和ii）至少具有软表面部分的多个颗粒，其中软表面部分包括过渡金属化合物，其提供 莫氏硬度<6，任选地iii）氧化剂。 氧化剂可以包括过渡金属。 浆料相对于包含碳化硅的表面移动，其中去除至少一部分碳化硅表面。
-
公开(公告)号：US20110221039A1
公开(公告)日：2011-09-15
申请号：US12723309
申请日：2010-03-12
CPC分类号： H01L21/0201 , C30B25/186 , C30B29/36 , H01L21/0237 , H01L21/02378 , H01L21/02389 , H01L21/02439 , H01L21/02458 , H01L21/02521 , H01L21/02529 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/30608 , H01L21/30617 , H01L21/30625 , H01L29/1608 , H01L29/2003
摘要： An epitaxial article includes a substrate having a substrate surface having a substrate surface composition including crystalline defect or amorphous regions and crystalline non-defect regions. The crystalline defect or amorphous regions are recessed from the substrate surface by surface recess regions. A capping material fills the surface recess regions to provide capped defects that extend from a top of the defect regions to the substrate surface. The capping material is compositionally different from the substrate surface composition. An epitaxial layer over the substrate surface provides an average crystalline defect density in at least one area having a size ≧0.5 μm2 that is ≧ two times lower than an average crystalline defect density in that area at or below the substrate surface.
摘要翻译： 外延制品包括具有基板表面的基板，该基板表面具有包括晶体缺陷或非晶区域和晶体非缺陷区域的基板表面组成。 结晶缺陷或无定形区域通过表面凹陷区域从衬底表面凹陷。 封盖材料填充表面凹陷区域以提供从缺陷区域的顶部延伸到衬底表面的封盖缺陷。 封盖材料在组成上不同于基材表面组合物。 在衬底表面上的外延层提供至少一个尺寸≥0.5μm2的区域中的平均晶体缺陷密度，该面积比衬底表面处或下面区域的平均结晶缺陷密度低两倍。
-
公开(公告)号：US08557133B2
公开(公告)日：2013-10-15
申请号：US13305479
申请日：2011-11-28
申请人： Rajiv K Singh , Arul C. Arjunan , Dibakar Das , Deepika Singh , Abhudaya Mishra , Tanjore V Jayaraman
发明人： Rajiv K Singh , Arul C. Arjunan , Dibakar Das , Deepika Singh , Abhudaya Mishra , Tanjore V Jayaraman
IPC分类号： C03C15/00
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463 , C23F1/14 , H01L21/02024 , H01L21/0475 , H01L21/30625
摘要： Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness ≦6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed.
摘要翻译： 用于使用这种浆料抛光具有碳化硅表面的基材的浆料组合物和化学活化的CMP方法。 在这种方法中，碳化硅表面与CMP浆料组合物接触，CMP浆料组合物包括i）液体载体和ii）至少具有软表面部分的多个颗粒，其中软表面部分包括过渡金属化合物，其提供 莫氏硬度为6，任选地为iii）氧化剂。 氧化剂可以包括过渡金属。 浆料相对于包含碳化硅的表面移动，其中去除至少一部分碳化硅表面。
-
公开(公告)号：US07932534B2
公开(公告)日：2011-04-26
申请号：US12797330
申请日：2010-06-09
申请人： Rajiv K. Singh , Purushottam Kumar , Deepika Singh
发明人： Rajiv K. Singh , Purushottam Kumar , Deepika Singh
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/007 , H01L33/22 , H01L51/5275 , H01L2924/0002 , H01L2924/00
摘要： A solid state light source includes a substrate having a top surface and a bottom surface, and at least one optically active layer on the top surface of the substrate. At least one of the top surface, the bottom surface, the optically active layer or an emission surface on the optically active layer includes a patterned surface that includes a plurality of tilted surface features that have a high elevation portion and a low elevation portion that define a height (h), and wherein the plurality of tilted surface features define a minimum lateral dimension (r). The plurality of tilted surface features provide at least one surface portion that has a surface tilt angle from 3 to 85 degrees. The patterned surface has a surface roughness
摘要翻译： 固态光源包括具有顶表面和底表面的衬底，以及在衬底顶表面上的至少一个光学活性层。 顶表面，底表面，光学活性层或光学活性层上的发射表面中的至少一个包括图案化表面，其包括多个倾斜表面特征，其具有高仰角部分和限定 高度（h），并且其中所述多个倾斜表面特征限定最小横向尺寸（r）。 多个倾斜表面特征提供具有3至85度的表面倾斜角度的至少一个表面部分。 图案化表面的表面粗糙度<10nm rms，h /r≥0.05。
-
公开(公告)号：US20100308359A1
公开(公告)日：2010-12-09
申请号：US12797330
申请日：2010-06-09
申请人： Rajiv K. Singh , Purushottam Kumar , Deepika Singh
发明人： Rajiv K. Singh , Purushottam Kumar , Deepika Singh
IPC分类号： H01L33/44 , H01L21/461
CPC分类号： H01L33/20 , H01L33/007 , H01L33/22 , H01L51/5275 , H01L2924/0002 , H01L2924/00
摘要： A solid state light source includes a substrate having a top surface and a bottom surface, and at least one optically active layer on the top surface of the substrate. At least one of the top surface, the bottom surface, the optically active layer or an emission surface on the optically active layer includes a patterned surface that includes a plurality of tilted surface features that have a high elevation portion and a low elevation portion that define a height (h), and wherein the plurality of tilted surface features define a minimum lateral dimension (r). The plurality of tilted surface features provide at least one surface portion that has a surface tilt angle from 3 to 85 degrees. The patterned surface has a surface roughness
摘要翻译： 固态光源包括具有顶表面和底表面的衬底，以及在衬底顶表面上的至少一个光学活性层。 顶表面，底表面，光学活性层或光学活性层上的发射表面中的至少一个包括图案化表面，其包括多个倾斜表面特征，其具有高仰角部分和限定 高度（h），并且其中所述多个倾斜表面特征限定最小横向尺寸（r）。 多个倾斜表面特征提供具有3至85度的表面倾斜角度的至少一个表面部分。 图案化表面的表面粗糙度<10nm rms，h /r≥0.05。
-
公开(公告)号：US08506835B2
公开(公告)日：2013-08-13
申请号：US12761110
申请日：2010-04-15
申请人： Rajiv Singh , Deepika Singh , Abhudaya Mishra
发明人： Rajiv Singh , Deepika Singh , Abhudaya Mishra
CPC分类号： H01L21/77 , B24B37/042 , H01L21/3212 , H01L21/76819 , H01L21/7684
摘要： A cyclic method of chemical mechanical polishing (CMP) a wafer having a surface includes placing the wafer on a platen in a CMP apparatus and then performing a multi-step CMP comprising process. The multi-step CMP process includes delivering a first chemical composition onto the wafer while on the platen for a first time duration, and without removing the wafer from the platen, delivering a second chemical composition different from the first composition onto the wafer for a second time duration after the first time duration. The multi-step CMP comprising process includes CMP removal using a slurry during one of the first and second time durations and a non-polishing process during the other of the first and second time durations. The multi-step CMP comprising process is repeated a plurality of times.
摘要翻译： 具有表面的晶片的化学机械抛光（CMP）的循环方法包括将晶片放置在CMP装置中的压板上，然后执行包括工艺的多步骤CMP。 多步CMP工艺包括将第一化学成分在压板上第一时间内提供到晶片上，并且不从压板移除晶片，将不同于第一组合物的第二化学组合物输送到晶片上用于第二时间 第一个持续时间后的持续时间。 包括多步骤CMP的方法包括在第一和第二持续时间之一期间使用浆料进行CMP去除以及在第一和第二持续时间中的另一个期间的非抛光工艺。 多步骤CMP包括处理重复多次。
-
公开(公告)号：US20110256802A1
公开(公告)日：2011-10-20
申请号：US12761110
申请日：2010-04-15
申请人： Rajiv Singh , Deepika Singh , Abhudaya Mishra
发明人： Rajiv Singh , Deepika Singh , Abhudaya Mishra
IPC分类号： B24B1/00
CPC分类号： H01L21/77 , B24B37/042 , H01L21/3212 , H01L21/76819 , H01L21/7684
摘要： A cyclic method of chemical mechanical polishing (CMP) a wafer having a surface includes placing the wafer on a platen in a CMP apparatus and then performing a multi-step CMP comprising process. The multi-step CMP process includes delivering a first chemical composition onto the wafer while on the platen for a first time duration, and without removing the wafer from the platen, delivering a second chemical composition different from the first composition onto the wafer for a second time duration after the first time duration. The multi-step CMP comprising process includes CMP removal using a slurry during one of the first and second time durations and a non-polishing process during the other of the first and second time durations. The multi-step CMP comprising process is repeated a plurality of times.
摘要翻译： 具有表面的晶片的化学机械抛光（CMP）的循环方法包括将晶片放置在CMP装置中的压板上，然后执行包括工艺的多步骤CMP。 多步CMP工艺包括将第一化学成分在压板上第一时间内提供到晶片上，并且不从压板移除晶片，将不同于第一组合物的第二化学组合物输送到晶片上用于第二时间 第一个持续时间后的持续时间。 包括多步骤CMP的方法包括在第一和第二持续时间之一期间使用浆料进行CMP去除以及在第一和第二持续时间中的另一个期间的非抛光工艺。 多步骤CMP包括处理重复多次。
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.026 秒)
