公开(公告)号：US08298867B2

公开(公告)日：2012-10-30

申请号：US12850374

申请日：2010-08-04

申请人： Olaf Hohlfeld ,  Jens Goerlich ,  Reinhold Bayerer

发明人： Olaf Hohlfeld ,  Jens Goerlich ,  Reinhold Bayerer

IPC分类号： H01L21/00

CPC分类号： H01L23/3735 ,  H01L23/24 ,  H01L23/49811 ,  H01L24/28 ,  H01L24/29 ,  H01L24/39 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/8584 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/2076 ,  H05K1/0203 ,  H05K1/0306 ,  H05K3/0061 ,  H05K3/341 ,  H05K2201/0373 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/37099

摘要： A power semiconductor module is fabricated by providing a circuit substrate with a metal surface and an insulating substrate comprising an insulation carrier featuring a bottom side provided with a bottom metallization layer. An anchoring structure is provided comprising a plurality of oblong pillars each featuring a first end facing away from the insulation carrier, at least a subset of the pillars being distributed over the anchoring structure in its entirety, it applying for each of the pillars of the subset that from a sidewall thereof no or a maximum of three elongated bonding webs each extend to a sidewall of another pillar where they are bonded thereto. The anchoring structure is positioned between the insulation carrier and metal surface, after which the metal surface is soldered to the bottom metallization layer and anchoring structure by means of a solder packing all interstices between the metal surface and bottom metallization layer with the solder.

摘要翻译： 通过为电路基板提供金属表面和绝缘基板来制造功率半导体模块，所述绝缘基板包括具有设置有底部金属化层的底侧的绝缘载体。 提供了一种锚固结构，其包括多个长方形支柱，每个长方形支柱具有背离绝缘载体的第一端，所述支柱的至少一部分整体分布在锚固结构上，它应用于子集的每个支柱 从其侧壁没有或最多三个细长的粘合幅材每个延伸到另一个柱的侧壁，在其另一个柱的侧壁上。 锚固结构位于绝缘载体和金属表面之间，之后通过焊料将金属表面焊接到底部金属化层和锚定结构，所述金属表面与金属表面和底部金属化层之间的所有间隙都与焊料焊接。

公开(公告)号：US08319335B2

公开(公告)日：2012-11-27

申请号：US12752825

申请日：2010-04-01

申请人： Reinhold Bayerer ,  Olaf Hohlfeld ,  Thilo Stolze

发明人： Reinhold Bayerer ,  Olaf Hohlfeld ,  Thilo Stolze

IPC分类号： H01L23/34

CPC分类号： H01L24/72 ,  H01L23/04 ,  H01L23/3735 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/28 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/83 ,  H01L24/85 ,  H01L25/072 ,  H01L2224/0603 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/85947 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/16151 ,  H01L2924/16152 ,  H01L2924/1616 ,  H01L2924/16315 ,  H01L2924/181 ,  H01L2924/2076 ,  H01L2924/3011 ,  Y10T156/10 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/01006 ,  H01L2224/85399 ,  H01L2224/05599

摘要： The invention relates to a power semiconductor module including a power semiconductor chip arranged on a substrate and comprising a bottom side facing the substrate, a top side facing away from the substrate, and an electrical contact face arranged on the top side. A bond wire is bonded to the contact face. At least when the power semiconductor module is fastened to a heatsink, a contact pressure element creates a contact pressure force (F) acting on a sub-portion 36 of a bond wire portion configured between two adjacent bond sites. The contact pressure force (F) results in the power semiconductor chip and a substrate beneath being pressed against the heatsink.

摘要翻译： 本发明涉及一种功率半导体模块，其包括布置在基板上的功率半导体芯片，并且包括面向基板的底侧，背离基板的顶面和布置在顶侧的电接触面。 接合线接合到接触面。 至少当功率半导体模块固定在散热器上时，接触压力元件产生作用在配置在两个相邻的粘结位置之间的接合线部分的子部分36上的接触压力（F）。 接触压力（F）导致功率半导体芯片和下面的衬底压在散热片上。

公开(公告)号：US20100252922A1

公开(公告)日：2010-10-07

申请号：US12752825

申请日：2010-04-01

申请人： Reinhold Bayerer ,  Olaf Hohlfeld ,  Thilo Stolze

发明人： Reinhold Bayerer ,  Olaf Hohlfeld ,  Thilo Stolze

IPC分类号： H01L23/48 ,  B32B37/00

CPC分类号： H01L24/72 ,  H01L23/04 ,  H01L23/3735 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/28 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/83 ,  H01L24/85 ,  H01L25/072 ,  H01L2224/0603 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/85947 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/16151 ,  H01L2924/16152 ,  H01L2924/1616 ,  H01L2924/16315 ,  H01L2924/181 ,  H01L2924/2076 ,  H01L2924/3011 ,  Y10T156/10 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/01006 ,  H01L2224/85399 ,  H01L2224/05599

摘要： The invention relates to a power semiconductor module including a power semiconductor chip arranged on a substrate and comprising a bottom side facing the substrate, a top side facing away from the substrate, and an electrical contact face arranged on the top side. A bond wire is bonded to the contact face. At least when the power semiconductor module is fastened to a heatsink, a contact pressure element creates a contact pressure force (F) acting on a sub-portion 36 of a bond wire portion configured between two adjacent bond sites. The contact pressure force (F) results in the power semiconductor chip and a substrate beneath being pressed against the heatsink.

摘要翻译： 本发明涉及一种功率半导体模块，其包括布置在基板上的功率半导体芯片，并且包括面向基板的底侧，背离基板的顶面和布置在顶侧的电接触面。 接合线接合到接触面。 至少当功率半导体模块固定在散热器上时，接触压力元件产生作用在配置在两个相邻的粘结位置之间的接合线部分的子部分36上的接触压力（F）。 接触压力（F）导致功率半导体芯片和下面的衬底压在散热片上。

公开(公告)号：US20090243089A1

公开(公告)日：2009-10-01

申请号：US12059188

申请日：2008-03-31

申请人： Olaf Hohlfeld ,  Reinhold Bayerer

发明人： Olaf Hohlfeld ,  Reinhold Bayerer

IPC分类号： H01L23/52 ,  H01L21/44

CPC分类号： B23K35/262 ,  H01L23/049 ,  H01L23/24 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/488 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/8384 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12043 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K3/0061 ,  H05K3/341 ,  H05K2201/0373 ,  H05K2203/0307 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00015

摘要： A module includes a metallized substrate including a metal layer, a base plate, and a joint joining the metal layer to the base plate. The joint includes solder contacting the base plate and an inter-metallic zone contacting the metal layer and the solder. The inter-metallic zone has spikes up to 100 μm and a roughness (Rz) of at least 20 μm.

摘要翻译： 模块包括金属化基板，其包括金属层，基板和将金属层连接到基板的接头。 接头包括焊接接触基板和与金属层和焊料接触的金属间区域。 金属间区域具有高达100毫米的尖峰和至少20微米的粗糙度（Rz）。

公开(公告)号：US08587116B2

公开(公告)日：2013-11-19

申请号：US12894645

申请日：2010-09-30

申请人： Olaf Hohlfeld ,  Reinhold Bayerer

发明人： Olaf Hohlfeld ,  Reinhold Bayerer

IPC分类号： H01L23/34 ,  H01L23/495 ,  H01L23/053

CPC分类号： H01L23/3735 ,  H01L23/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/8384 ,  H01L2224/8584 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： A power semiconductor module is fabricated by providing a base with a metal surface and an insulating substrate comprising an insulation carrier having a bottom side provided with a bottom metallization layer. An insert exhibiting a wavy structure is provided. The insert is positioned between the insulation carrier and metal surface, after which the metal surface is soldered to the bottom side metallization layer and insert by means of a solder packing all interstices between the metal surface and bottom side metallization layer with the solder.

摘要翻译： 通过提供具有金属表面的基底和包括具有设置有底部金属化层的底侧的绝缘载体的绝缘基底来制造功率半导体模块。 提供具有波浪形结构的插入件。 插入件位于绝缘载体和金属表面之间，然后将金属表面焊接到底侧金属化层，并通过焊料填充金属表面和底侧金属化层之间的所有间隙与焊料插入。

公开(公告)号：US09688060B2

公开(公告)日：2017-06-27

申请号：US13571417

申请日：2012-08-10

申请人： Reinhold Bayerer ,  Olaf Hohlfeld

发明人： Reinhold Bayerer ,  Olaf Hohlfeld

IPC分类号： B23K37/04 ,  H01L21/58 ,  B29C65/02 ,  H01L21/30 ,  B32B37/10 ,  H01L21/50 ,  H01L25/07 ,  H01L25/00 ,  H01L21/56 ,  H01L23/373 ,  H01L23/00

CPC分类号： B32B37/10 ,  H01L21/50 ,  H01L21/566 ,  H01L23/3735 ,  H01L24/75 ,  H01L24/83 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/75102 ,  H01L2224/7511 ,  H01L2224/75265 ,  H01L2224/75317 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/83007 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2924/01327 ,  H01L2924/15787 ,  H01L2924/00 ,  H01L2924/00014

摘要： A composite is produced by providing a first and a second joining partner, a connecting means, a sealing means, a reactor having a pressure chamber, and a heating element. The two joining partners and the connecting means are arranged in the pressure chamber such that the connecting means is situated between the first joining partner and the second joining partner. A gas-tight region is then produced, in which the connecting means is arranged. Afterward, a gas pressure of at least 20 bar is produced in the pressure chamber outside the gas-tight region. The gas pressure acts on the gas-tight region and presses the first joining partner, the second joining partner and the connecting means together. The joining partners and the connecting means are then heated by means of the heating element to a predefined maximum temperature of at least 210° C. and then cooled.

公开(公告)号：US20130203218A1

公开(公告)日：2013-08-08

申请号：US13571417

申请日：2012-08-10

申请人： Reinhold Bayerer ,  Olaf Hohlfeld

发明人： Reinhold Bayerer ,  Olaf Hohlfeld

IPC分类号： B32B37/10 ,  H01L21/50

CPC分类号： B32B37/10 ,  H01L21/50 ,  H01L21/566 ,  H01L23/3735 ,  H01L24/75 ,  H01L24/83 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/75102 ,  H01L2224/7511 ,  H01L2224/75265 ,  H01L2224/75317 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/83007 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2924/01327 ,  H01L2924/15787 ,  H01L2924/00 ,  H01L2924/00014

摘要： A composite is produced by providing a first and a second joining partner, a connecting means, a sealing means, a reactor having a pressure chamber, and a heating element. The two joining partners and the connecting means are arranged in the pressure chamber such that the connecting means is situated between the first joining partner and the second joining partner. A gas-tight region is then produced, in which the connecting means is arranged. Afterward, a gas pressure of at least 20 bar is produced in the pressure chamber outside the gas-tight region. The gas pressure acts on the gas-tight region and presses the first joining partner, the second joining partner and the connecting means together. The joining partners and the connecting means are then heated by means of the heating element to a predefined maximum temperature of at least 210° C. and then cooled.

摘要翻译： 通过提供第一和第二接合对象，连接装置，密封装置，具有压力室的反应器和加热元件来制造复合材料。 两个连接伙伴和连接装置布置在压力室中，使得连接装置位于第一加入伙伴和第二连接伙伴之间。 然后产生气密区域，其中布置有连接装置。 之后，在气密区域外的压力室中产生至少20巴的气体压力。 气体压力作用在气密区域上并将第一接合配对物，第二接合配合物和连接装置压在一起。 然后通过加热元件将接合配件和连接装置加热至至少210℃的预定最大温度，然后冷却。

公开(公告)号：US20120080799A1

公开(公告)日：2012-04-05

申请号：US12894645

申请日：2010-09-30

申请人： Olaf Hohlfeld ,  Reinhold Bayerer

发明人： Olaf Hohlfeld ,  Reinhold Bayerer

IPC分类号： H01L23/34 ,  H01L21/60

CPC分类号： H01L23/3735 ,  H01L23/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/8384 ,  H01L2224/8584 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： A power semiconductor module is fabricated by providing a base with a metal surface and an insulating substrate comprising an insulation carrier having a bottom side provided with a bottom metallization layer. An insert exhibiting a wavy structure is provided. The insert is positioned between the insulation carrier and metal surface, after which the metal surface is soldered to the bottom side metallization layer and insert by means of a solder packing all interstices between the metal surface and bottom side metallization layer with the solder.

摘要翻译： 通过提供具有金属表面的基底和包括具有设置有底部金属化层的底侧的绝缘载体的绝缘基底来制造功率半导体模块。 提供具有波浪形结构的插入件。 插入件位于绝缘载体和金属表面之间，然后将金属表面焊接到底侧金属化层，并通过焊料填充金属表面和底侧金属化层之间的所有间隙与焊料插入。

公开(公告)号：US20110053319A1

公开(公告)日：2011-03-03

申请号：US12850374

申请日：2010-08-04

申请人： Olaf Hohlfeld ,  Jens Goerlich ,  Reinhold Bayerer

发明人： Olaf Hohlfeld ,  Jens Goerlich ,  Reinhold Bayerer

IPC分类号： H01L21/58

CPC分类号： H01L23/3735 ,  H01L23/24 ,  H01L23/49811 ,  H01L24/28 ,  H01L24/29 ,  H01L24/39 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/8584 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/2076 ,  H05K1/0203 ,  H05K1/0306 ,  H05K3/0061 ,  H05K3/341 ,  H05K2201/0373 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/37099

摘要： A power semiconductor module is fabricated by providing a circuit substrate with a metal surface and an insulating substrate comprising an insulation carrier featuring a bottom side provided with a bottom metallization layer. An anchoring structure is provided comprising a plurality of oblong pillars each featuring a first end facing away from the insulation carrier, at least a subset of the pillars being distributed over the anchoring structure in its entirety, it applying for each of the pillars of the subset that from a sidewall thereof no or a maximum of three elongated bonding webs each extend to a sidewall of another pillar where they are bonded thereto. The anchoring structure is positioned between the insulation carrier and metal surface, after which the metal surface is soldered to the bottom metallization layer and anchoring structure by means of a solder packing all interstices between the metal surface and bottom metallization layer with the solder.

摘要翻译： 通过为电路基板提供金属表面和绝缘基板来制造功率半导体模块，所述绝缘基板包括具有设置有底部金属化层的底侧的绝缘载体。 提供了一种锚固结构，其包括多个长方形支柱，每个长方形支柱具有背离绝缘载体的第一端，所述支柱的至少一部分整体分布在锚固结构上，它应用于子集的每个柱 从其侧壁没有或最多三个细长的粘合幅材每个延伸到另一个柱的侧壁，在其另一个柱的侧壁上。 锚固结构位于绝缘载体和金属表面之间，之后通过焊料将金属表面焊接到底部金属化层和锚定结构，所述金属表面与金属表面和底部金属化层之间的所有间隙都与焊料焊接。

公开(公告)号：US07821130B2

公开(公告)日：2010-10-26

申请号：US12059188

申请日：2008-03-31

申请人： Olaf Hohlfeld ,  Reinhold Bayerer

发明人： Olaf Hohlfeld ,  Reinhold Bayerer

IPC分类号： H01L23/52 ,  H01L21/44

CPC分类号： B23K35/262 ,  H01L23/049 ,  H01L23/24 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/488 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/8384 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12043 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K3/0061 ,  H05K3/341 ,  H05K2201/0373 ,  H05K2203/0307 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00015

摘要： A module includes a metallized substrate including a metal layer, a base plate, and a joint joining the metal layer to the base plate. The joint includes solder contacting the base plate and an inter-metallic zone contacting the metal layer and the solder. The inter-metallic zone has spikes up to 100 μm and a roughness (Rz) of at least 20 μm.

摘要翻译： 模块包括金属化基板，其包括金属层，基板和将金属层连接到基板的接头。 接头包括焊接接触基板和与金属层和焊料接触的金属间区域。 金属间区域的峰值高达100μm，粗糙度（Rz）至少为20μm。