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    Layered films formed by controlled phase segregation
    2.
    发明申请
    Layered films formed by controlled phase segregation 有权
    通过控制相分离形成的层状膜

    公开(公告)号：US20060183348A1

    公开(公告)日：2006-08-17

    申请号：US11060843

    申请日：2005-02-17

    申请人： Robert Meagley ,  Michael Leeson ,  Michael Goodner ,  Bob Leet ,  Michael McSwiney ,  Shan Clark

    发明人： Robert Meagley ,  Michael Leeson ,  Michael Goodner ,  Bob Leet ,  Michael McSwiney ,  Shan Clark

    IPC分类号： H01L21/31

    CPC分类号： H01L21/76808 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/76822 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76835

    摘要： Multiple-layer films in integrated circuit processing may be formed by the phase segregation of a single composition formed above a semiconductor substrate. The composition is then induced to phase segregate into at least a first continuous phase and a second continuous phase. The composition may be formed of two or more components that phase segregate into different continuous layers. The composition may also be a single component that breaks down upon activation into two or more components that phase segregate into different continuous layers. Phase segregation may be used to form, for example, a sacrificial light absorbing material (SLAM) and a developer resistant skin, a dielectric layer and a hard mask, a photoresist and an anti-reflective coating (ARC), a stress buffer coating and a protective layer on a substrate package, and light interference layers.

    摘要翻译： 集成电路处理中的多层膜可以通过在半导体衬底上形成的单一组合物的相分离来形成。 然后将组合物诱导相分离成至少第一连续相和第二连续相。 组合物可以由相分离成不同连续层的两种或多种组分形成。 组合物还可以是单一组分，其在活化时分解成两个或多个相分离成不同连续层的组分。 相分离可用于形成例如牺牲光吸收材料（SLAM）和显影剂抗性皮肤，介电层和硬掩模，光致抗蚀剂和抗反射涂层（ARC），应力缓冲涂层和 衬底封装上的保护层，以及光干涉层。

    Pixelated photoresists
    3.
    发明申请
    Pixelated photoresists 有权
    像素化光刻胶

    公开(公告)号：US20060068318A1

    公开(公告)日：2006-03-30

    申请号：US10956284

    申请日：2004-09-30

    申请人： Robert Meagley ,  Michael Goodner ,  Bob Leet ,  Michael McSwiney

    发明人： Robert Meagley ,  Michael Goodner ,  Bob Leet ,  Michael McSwiney

    IPC分类号： G03C1/76

    CPC分类号： G03F7/0382 ,  G03F7/0392 ,  Y10S430/114 ,  Y10S430/115

    摘要： A deliberately engineered placement and size constraint (molecular weight distribution) of photoacid generators, solubility switches, photoimageable species, and quenchers forms individual pixels within a photoresist. Upon irradiation, a self-contained reaction occurs within each of the individual pixels that were irradiated to pattern the photoresist. These pixels may take on a variety of forms including a polymer chain, a bulky cluster, a micelle, or a micelle formed of several polymer chains. Furthermore, these pixels may be designed to self-assemble onto the substrate on which the photoresist is applied.

    摘要翻译： 光致酸产生剂，溶解度开关，可光成象物质和猝灭剂的故意设计的放置和尺寸约束（分子量分布）在光致抗蚀剂内形成各个像素。 在照射时，在被照射以对光致抗蚀剂进行图案化的各个像素内发生独立的反应。 这些像素可以具有各种形式，包括由几个聚合物链形成的聚合物链，大体积聚集体，胶束或胶束。 此外，这些像素可以被设计为自组装到其上施加光致抗蚀剂的基板上。

    Substrate patterning integration
    5.
    发明申请
    Substrate patterning integration 审中-公开
    基板图案集成

    公开(公告)号：US20050014378A1

    公开(公告)日：2005-01-20

    申请号：US10621744

    申请日：2003-07-16

    申请人： Michael Goodner ,  Bob Leet ,  Robert Meagley ,  Michael McSwiney

    发明人： Michael Goodner ,  Bob Leet ,  Robert Meagley ,  Michael McSwiney

    IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L21/311

    CPC分类号： H01L21/3086 ,  H01L21/0337 ,  H01L21/31144

    摘要： A substrate patterning integration is disclosed to address structural and process limitations of conventional resist patterning over hardmask techniques. A resist layer positioned adjacent a substrate layer is patterned, subsequent to which a hardmask layer is deposited. The hardmask layer may be thinned to expose remaining portions of the patterned resist layer for removal by chemical treatment to expose portions of the underlying substrate layer into which the pattern may be transferred using wet or dry chemical etch techniques.

    摘要翻译： 公开了衬底图案化集成以解决传统抗蚀剂图案化在硬掩模技术上的结构和工艺限制。 对邻近衬底层定位的抗蚀剂层进行图案化，随后沉积硬掩模层。 硬掩模层可以变薄以暴露图案化的抗蚀剂层的剩余部分，以通过化学处理去除，以暴露使用湿式或干式化学蚀刻技术将图案转移到其中的下层基底层的部分。

    Energy harvesting molecules and photoresist technology
    6.
    发明申请
    Energy harvesting molecules and photoresist technology 失效
    能量收集分子和光刻胶技术

    公开(公告)号：US20060003253A1

    公开(公告)日：2006-01-05

    申请号：US10881475

    申请日：2004-06-30

    申请人： Robert Meagley ,  Michael Goodner ,  Robert Leet ,  Michael McSwiney

    发明人： Robert Meagley ,  Michael Goodner ,  Robert Leet ,  Michael McSwiney

    IPC分类号： G03C1/492

    CPC分类号： G03F7/0045 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

    摘要： A composition including a first moiety; and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that energy harvested at the second moiety may be transferred to the first moiety. An article of manufacture including a film including a first moiety and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that collectively the first and second moieties have an electron capture cross-section greater than the electron capture cross-section of the first moiety alone. A method including forming a film on a substrate including a first moiety and a different second moiety; exposing the film to photonic or charged particle radiation; and patterning the film.

    摘要翻译： 包含第一部分的组合物; 以及能够从外部源收获能量的不同的第二部分，其中第二部分被定位成使得在第二部分收获的能量可以转移到第一部分。 包括包括第一部分和能够从外部源收集能量的不同第二部分的膜的制品，其中所述第二部分被定位成使得所述第一部分和所述第二部分的电子捕获截面大于所述电子 仅捕获第一部分的横截面。 一种方法，包括在包括第一部分和不同的第二部分的基底上形成膜; 将膜暴露于光子或带电粒子辐射; 并构图。

    Low-temperature silicon nitride deposition
    9.
    发明申请
    Low-temperature silicon nitride deposition 失效
    低温氮化硅沉积

    公开(公告)号：US20050025885A1

    公开(公告)日：2005-02-03

    申请号：US10631627

    申请日：2003-07-30

    申请人： Michael McSwiney ,  Michael Goodner

    发明人： Michael McSwiney ,  Michael Goodner

    IPC分类号： C23C16/34 ,  C23C16/00

    CPC分类号： C23C16/345

    摘要： A method including combining a silicon source precursor and a nitrogen source precursor at a temperature up to 550° C.; and forming a silicon nitride film. A system including a chamber; a silicon precursor source coupled to the chamber; a controller configured to control the introduction into the chamber of a silicon precursor from the silicon precursor source; and a memory coupled to the controller comprising a machine-readable medium having a machine-readable program embodied therein for directing operation of the system, the machine-readable program including instructions for controlling the second precursor source to introduce an effective amount of silicon precursor into the chamber at a temperature up to 550° C.

    摘要翻译： 一种方法，包括在高达550℃的温度下组合硅源前体和氮源前体; 并形成氮化硅膜。 包括室的系统 耦合到所述室的硅前体源; 控制器，被配置为控制从所述硅前体源引入所述室中的硅前体; 以及耦合到控制器的存储器，包括机器可读介质，其具有体现在其中的机器可读程序，用于引导系统的操作，该机器可读程序包括用于控制第二前驱源的指令，以将有效量的硅前体引入 该室温度高达550°C