公开(公告)号：US07713846B2

公开(公告)日：2010-05-11

申请号：US12104947

申请日：2008-04-17

申请人： Ru-Sheng Liu ,  Han-Lung Tsai ,  Cheng-Hsu Hsiao

发明人： Ru-Sheng Liu ,  Han-Lung Tsai ,  Cheng-Hsu Hsiao

IPC分类号： H01L21/76

CPC分类号： H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68354 ,  H01L2224/32145 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83856 ,  H01L2225/0651 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/00

摘要： A process applied to grinding, dicing, and/or stacking semiconductors is disclosed. One of its features is that after transparent material is stuck on its active surface, a semiconductor is ground from another surface thereof to become thinner, then take advantage of transparency of the transparent material to cut the transparent material and the semiconductor, to obtain at least one smaller semiconductor unit such as die or chip. Another feature is that the transparent material remains sticking to the active surface of the die by an adhesion layer until the die is attached to a carrier or another die, and then the transparent material and the adhesion layer are removed by taking advantage of a function of the adhesion layer: receiving a ray to lose adhesion between it and the active surface. Preferably the ray reaches the adhesion layer via the transparent material stuck on the active surface of the die.

摘要翻译： 公开了一种应用于研磨，切割和/或堆叠半导体的方法。 其特征之一是在将透明材料粘贴在其活性表面上之后，从其另一表面研磨半导体以变薄，然后利用透明材料的透明度来切割透明材料和半导体，以获得至少 一个较小的半导体单元，如芯片或芯片。 另一个特征是透明材料通过粘合层保持粘附到模具的活性表面，直到模具附接到载体或另一个模具，然后通过利用透明材料和粘合层的功能去除透明材料和粘附层 粘合层：接收光线以失去其与活性表面之间的粘附。 优选地，光线通过粘附在模具的有效表面上的透明材料到达粘附层。

公开(公告)号：US20080213980A1

公开(公告)日：2008-09-04

申请号：US12104947

申请日：2008-04-17

申请人： Ru-Sheng Liu ,  Han-Lung Tsai ,  Cheng-Hsu Hsiao

发明人： Ru-Sheng Liu ,  Han-Lung Tsai ,  Cheng-Hsu Hsiao

IPC分类号： H01L21/304

CPC分类号： H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68354 ,  H01L2224/32145 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83856 ,  H01L2225/0651 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/00

摘要： A process applied to grinding, dicing, and/or stacking semiconductors is disclosed. One of its features is that after transparent material is stuck on its active surface, a semiconductor is ground from another surface thereof to become thinner, then take advantage of transparency of the transparent material to cut the transparent material and the semiconductor, to obtain at least one smaller semiconductor unit such as die or chip. Another feature is that the transparent material remains sticking to the active surface of the die by an adhesion layer until the die is attached to a carrier or another die, and then the transparent material and the adhesion layer are removed by taking advantage of a function of the adhesion layer: receiving a ray to lose adhesion between it and the active surface. Preferably the ray reaches the adhesion layer via the transparent material stuck on the active surface of the die.

摘要翻译： 公开了一种应用于研磨，切割和/或堆叠半导体的方法。 其特征之一是在将透明材料粘贴在其活性表面上之后，从其另一表面研磨半导体以变薄，然后利用透明材料的透明度来切割透明材料和半导体，以获得至少 一个较小的半导体单元，如芯片或芯片。 另一个特征是透明材料通过粘合层保持粘附到模具的活性表面，直到模具附接到载体或另一个模具，然后通过利用透明材料和粘合层的功能去除透明材料和粘附层 粘合层：接收光线以失去其与活性表面之间的粘附。 优选地，光线通过粘附在模具的有效表面上的透明材料到达粘附层。

公开(公告)号：US20060137420A1

公开(公告)日：2006-06-29

申请号：US11319110

申请日：2005-12-27

申请人： Ru- Sheng Liu ,  Han-Lung Tsai ,  Cheng-Hsu Hsiao

发明人： Ru- Sheng Liu ,  Han-Lung Tsai ,  Cheng-Hsu Hsiao

IPC分类号： B21C23/00

CPC分类号： H01L21/6835 ,  H01L21/67132 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/32145 ,  H01L2924/3511

摘要： A process applied to grinding, dicing, and/or stacking semiconductors is disclosed. One feature of the process is that after transparent material is stuck on its active surface, a semiconductor is ground from another surface thereof to become thinner, then the semiconductor is diced, by taking advantage of transparency of the transparent material, from its active surface, to obtain at least one smaller semiconductor unit such as die/dice or chip(s). Another feature is that the transparent material remains sticking to the active surface of the die by an adhesion layer until the die is attached to a carrier or another die, and then the transparent material and the adhesion layer are removed by taking advantage of a function of the adhesion layer: receiving a ray to lose adhesion between it and the active surface. Preferably the ray reaches the adhesion layer via the transparent material stuck on the active surface of the die.

摘要翻译： 公开了一种应用于研磨，切割和/或堆叠半导体的方法。 该方法的一个特征是，在透明材料粘附在其有效表面上之后，从其另一表面研磨半导体以变薄，然后通过利用透明材料的透明度从其活性表面切割半导体， 以获得至少一个较小的半导体单元，例如芯片/芯片或芯片。 另一个特征是透明材料通过粘合层保持粘附到模具的活性表面，直到模具附接到载体或另一个模具，然后通过利用透明材料和粘合层的功能去除透明材料和粘附层 粘合层：接收光线以失去其与活性表面之间的粘附。 优选地，光线通过粘附在模具的有效表面上的透明材料到达粘附层。

公开(公告)号：US20080265385A1

公开(公告)日：2008-10-30

申请号：US12215543

申请日：2008-06-27

申请人： Han-Lung Tsai ,  Chih-Ming Huang ,  Cheng-Hsu Hsiao

发明人： Han-Lung Tsai ,  Chih-Ming Huang ,  Cheng-Hsu Hsiao

IPC分类号： H01L21/60 ,  H01L23/495

CPC分类号： H01L24/85 ,  H01L23/49811 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48465 ,  H01L2224/48475 ,  H01L2224/4848 ,  H01L2224/48482 ,  H01L2224/48499 ,  H01L2224/48599 ,  H01L2224/78301 ,  H01L2224/85051 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85986 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/00012 ,  H01L2224/4554

摘要： A semiconductor package using copper wires and a wire bonding method for the same are proposed. The package includes a carrier having fingers and a chip mounted on the carrier. The method includes implanting stud bumps on the fingers of the carrier and electrically connecting the chip and the carrier by copper wires with one ends of the copper wires being bonded to bond pads of the chip and the other ends of the copper wires being bonded to the stud bumps on the carrier. The implanted stud bumps on the carrier improve bondability of the copper wires to the carrier and thus prevent stitch lift. With good bonding, residues of copper wires left behind after a bonding process have even tail ends and uniform tail length to enable fabrication of solder balls of uniform size, thereby eliminating a conventional step of implanting stud bumps on the bond pads of chips and preventing ball lift from occurring.

摘要翻译： 提出了使用铜线的半导体封装及其引线接合方法。 封装包括具有指状物的载体和安装在载体上的芯片。 该方法包括在支架的指状物上注入螺柱凸块，并用铜线电连接芯片和载体，铜线的一端被接合到芯片的接合焊盘，并且铜线的另一端被接合到 支架上的螺柱凸起。 载体上植入的柱形突起提高了铜线对载体的粘结性，从而防止了针迹提升。 通过良好的接合，在接合工艺之后留下的铜线的残留物具有均匀的尾端和均匀的尾部长度，以使得能够制造均匀尺寸的焊球，从而消除了在芯片的接合焊盘上植入凸块凸起并防止球的常规步骤 提升不发生。

公开(公告)号：US08698326B2

公开(公告)日：2014-04-15

申请号：US11900345

申请日：2007-09-10

申请人： Wen-Home Huang ,  Wen-Tsung Tseng ,  Chang-Fu Lin ,  Ho-Yi Tsai ,  Cheng-Hsu Hsiao

发明人： Wen-Home Huang ,  Wen-Tsung Tseng ,  Chang-Fu Lin ,  Ho-Yi Tsai ,  Cheng-Hsu Hsiao

IPC分类号： H01L23/28 ,  H01L23/48

CPC分类号： H01L21/561 ,  H01L23/3128 ,  H01L23/3142 ,  H01L29/0657 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/10158 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor package and a fabrication method thereof are disclosed. The fabrication method includes the steps of providing a semiconductor chip having an active surface and a non-active surface opposing to the active surface, roughening a peripheral portion of the non-active surface so as to divide the non-active surface into the peripheral portion formed with a roughened structure and a non-roughened central portion, mounting the semiconductor chip on a chip carrier via a plurality of solder bumps formed on the active surface, forming an encapsulant on the chip carrier to encapsulate the semiconductor chip. The roughened structure formed on the peripheral portion of the non-active surface of the semiconductor chip can reinforce the bonding between the semiconductor chip and the encapsulant, and the non-roughened central portion of the non-active surface of the semiconductor chip can maintain the structural strength of the semiconductor chip.

摘要翻译： 公开了半导体封装及其制造方法。 该制造方法包括以下步骤：提供具有与活性表面相对的活性表面和非活性表面的半导体芯片，粗糙化非活性表面的周边部分，以将非活性表面划分成周边部分 形成有粗糙结构和非粗糙化的中心部分，通过形成在有源表面上的多个焊料凸块将半导体芯片安装在芯片载体上，在芯片载体上形成密封剂以封装半导体芯片。 形成在半导体芯片的非活性表面的周边部分上的粗糙结构可以加强半导体芯片和密封剂之间的接合，并且半导体芯片的非活性表面的非粗糙化的中心部分可以保持 半导体芯片的结构强度。

公开(公告)号：US08058100B2

公开(公告)日：2011-11-15

申请号：US12788772

申请日：2010-05-27

申请人： Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

发明人： Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC分类号： H01L21/60

CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/97 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/351 ,  H01L2224/82 ,  H01L2924/00

摘要： A chip scale package structure and a method for fabricating the same are disclosed. The method includes forming metal pads on a predetermined part of a carrier; mounting chips on the carrier, each of the chips having a plurality of conductive bumps soldered to the metal pads; forming an encapsulant on the carrier to encapsulate the chips and the conductive bumps; removing the carrier to expose the metal pads and even the metal pads with a surface of the encapsulant; forming on the encapsulant a plurality of first conductive traces electrically connected to the metal pads; applying a solder mask on the first conductive traces, and forming a plurality of openings on the solder mask to expose a predetermined part of the first conductive traces; forming a plurality of conductive elements on the predetermined part; and cutting the encapsulant to form a plurality of chip scale package structures.

摘要翻译： 公开了一种芯片级封装结构及其制造方法。 该方法包括在载体的预定部分上形成金属垫; 在载体上安装芯片，每个芯片具有焊接到金属焊盘的多个导电凸块; 在载体上形成密封剂以封装芯片和导电凸块; 移除载体以暴露金属垫和甚至具有密封剂表面的金属垫; 在所述密封剂上形成电连接到所述金属焊盘的多个第一导电迹线; 在所述第一导电迹线上施加焊接掩模，以及在所述焊接掩模上形成多个开口以暴露所述第一导电迹线的预定部分; 在所述预定部分上形成多个导电元件; 以及切割所述密封剂以形成多个芯片级封装结构。

公开(公告)号：US07993967B2

公开(公告)日：2011-08-09

申请号：US12616834

申请日：2009-11-12

申请人： Yih-Jenn Jiang ,  Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

发明人： Yih-Jenn Jiang ,  Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L23/3121 ,  H01L21/561 ,  H01L21/6835 ,  H01L24/48 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/351 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/0401 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor package and a fabrication method are disclosed. The fabrication method includes applying a sacrificial layer on one surface of a metal carrier, applying an insulation layer on the sacrificial layer, and forming through holes in the sacrificial layer and the insulation layer to expose the metal carrier; forming a conductive metallic layer in each through hole; forming a patterned circuit layer on the insulation layer to be electrically connected to the conductive metallic layer; mounting at least a chip on the insulation layer and electrically connecting the chip to the patterned circuit layer; forming an encapsulant to encapsulate the chip and the patterned circuit layer; and removing the metal carrier and the sacrificial layer to expose the insulation layer and conductive metallic layer to allow the conductive metallic layer to protrude from the insulation layer. In the present invention, the distance between the semiconductor package and the external device is increased, and thermal stress caused by difference between the thermal expansion coefficients is reduced, so as to enhance the reliability of the product.

摘要翻译： 公开了半导体封装和制造方法。 制造方法包括在金属载体的一个表面上施加牺牲层，在牺牲层上施加绝缘层，以及在牺牲层和绝缘层中形成通孔以露出金属载体; 在每个通孔中形成导电金属层; 在所述绝缘层上形成图案化电路层，以电连接到所述导电金属层; 将至少一个芯片安装在所述绝缘层上并将所述芯片电连接到所述图案化电路层; 形成密封剂以封装所述芯片和所述图案化电路层; 并且去除金属载体和牺牲层以暴露绝缘层和导电金属层，以允许导电金属层从绝缘层突出。 在本发明中，半导体封装和外部器件之间的距离增加，由于热膨胀系数之差导致的热应力降低，从而提高了产品的可靠性。

公开(公告)号：US20110070697A1

公开(公告)日：2011-03-24

申请号：US12955256

申请日：2010-11-29

申请人： Fang-Lin Tsai ,  Ho-Yi Tsai ,  Han-Ping Pu ,  Cheng-Hsu Hsiao

发明人： Fang-Lin Tsai ,  Ho-Yi Tsai ,  Han-Ping Pu ,  Cheng-Hsu Hsiao

IPC分类号： H01L21/48

CPC分类号： H01L25/105 ,  H01L23/49811 ,  H01L23/49838 ,  H01L24/73 ,  H01L25/50 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01077 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A stack structure of semiconductor packages and a method for fabricating the stack structure are provided. A plurality of electrical connection pads and dummy pads are formed on a surface of a substrate of an upper semiconductor package and at positions corresponding to those around an encapsulant of a lower semiconductor package. Solder balls are implanted to the electrical connection pads and the dummy pads. The upper semiconductor package is mounted on the lower semiconductor package. The upper semiconductor package is electrically connected to the lower semiconductor package by the solder balls implanted to the electrical connection pads, and the encapsulant of the lower semiconductor package is surrounded and confined by the solder balls implanted to the dummy pads. Thereby, the upper semiconductor package is properly and securely positioned on the lower semiconductor package, without the occurrence of misalignment between the upper and lower semiconductor packages.

摘要翻译： 提供半导体封装的堆叠结构以及制造叠层结构的方法。 在上半导体封装的衬底的表面上和与下半导体封装的密封剂周围的位置相对应的位置处形成多个电连接焊盘和虚拟焊盘。 将焊球植入电连接焊盘和虚拟焊盘。 上半导体封装安装在下半导体封装上。 上半导体封装通过注入电连接焊盘的焊球电连接到下半导体封装，并且下半导体封装的密封剂被植入到虚拟焊盘中的焊球围绕并限制。 因此，上半导体封装被适当且牢固地定位在下半导体封装上，而不会发生上下半导体封装之间的未对准。

公开(公告)号：US20100151631A1

公开(公告)日：2010-06-17

申请号：US12710450

申请日：2010-02-23

申请人： Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

发明人： Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC分类号： H01L21/60

CPC分类号： H01L23/473 ,  H01L21/563 ,  H01L23/3157 ,  H01L2224/16225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253

摘要： A semiconductor package with a heat dissipating device and a fabrication method of the semiconductor package are provided. A chip is mounted on a substrate. The heat dissipating device is mounted on the chip, and includes an accommodating room, and a first opening and a second opening that communicate with the accommodating room. An encapsulant is formed between the heat dissipating device and the substrate to encapsulate the chip. A cutting process is performed to remove a non-electrical part of structure and expose the first and second openings from the encapsulant. A cooling fluid is received in the accommodating room to absorb and dissipate heat produced by the chip. The heat dissipating device covers the encapsulant and the chip to provide a maximum heat transfer area for the semiconductor package.

摘要翻译： 提供了具有散热装置的半导体封装和半导体封装的制造方法。 芯片安装在基板上。 散热装置安装在芯片上，并且包括容纳室，以及与容纳室连通的第一开口和第二开口。 在散热装置和衬底之间形成密封剂以封装芯片。 执行切割处理以去除结构的非电气部分并且从密封剂暴露第一和第二开口。 冷却流体容纳在容纳室中以吸收和散发由芯片产生的热量。 散热装置覆盖密封剂和芯片，以为半导体封装提供最大的传热面积。

公开(公告)号：US07671466B2

公开(公告)日：2010-03-02

申请号：US11647832

申请日：2006-12-29

申请人： Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

发明人： Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC分类号： H01L23/34 ,  H05K7/20 ,  H01L21/00

CPC分类号： H01L23/473 ,  H01L21/563 ,  H01L23/3157 ,  H01L2224/16225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253

摘要： A semiconductor package with a heat dissipating device and a fabrication method of the semiconductor package are provided. A chip is mounted on a substrate. The heat dissipating device is mounted on the chip, and includes an accommodating room, and a first opening and a second opening that communicate with the accommodating room. An encapsulant is formed between the heat dissipating device and the substrate to encapsulate the chip. A cutting process is performed to remove a non-electrical part of structure and expose the first and second openings from the encapsulant. A cooling fluid is received in the accommodating room to absorb and dissipate heat produced by the chip. The heat dissipating device covers the encapsulant and the chip to provide a maximum heat transfer area for the semiconductor package.

摘要翻译： 提供了具有散热装置的半导体封装和半导体封装的制造方法。 芯片安装在基板上。 散热装置安装在芯片上，并且包括容纳室，以及与容纳室连通的第一开口和第二开口。 在散热装置和衬底之间形成密封剂以封装芯片。 执行切割处理以去除结构的非电气部分，并使第一和第二开口与密封剂暴露。 冷却流体容纳在容纳室中以吸收和散发由芯片产生的热量。 散热装置覆盖密封剂和芯片，以为半导体封装提供最大的传热面积。