X-RAY PHOTOGRAPHING APPARATUS AND METHOD
    2.
    发明申请
    X-RAY PHOTOGRAPHING APPARATUS AND METHOD 审中-公开
    X射线摄影装置和方法

    公开(公告)号:US20140023178A1

    公开(公告)日:2014-01-23

    申请号:US13947237

    申请日:2013-07-22

    CPC classification number: G01N23/04 G01N2223/501 H01J35/00 H01J35/14 H01J35/16

    Abstract: An X-ray photographing apparatus includes: a plurality of X-ray generators which is two-dimensionally arranged and independently generates X-rays; and a plurality of X-ray detectors which is arranged in a one-to-one correspondence with the plurality of X-ray generators and independently detects the X-rays generated by the plurality of X-ray generators.

    Abstract translation: X射线摄影装置包括:多维X射线发生器,二维排列并独立地生成X射线; 以及与多个X射线发生器一一对应配置的多个X射线检测器,并且独立地检测由多个X射线发生器产生的X射线。

    X-RAY SOURCE DEVICE
    3.
    发明申请
    X-RAY SOURCE DEVICE 审中-公开
    X射线源设备

    公开(公告)号:US20130235976A1

    公开(公告)日:2013-09-12

    申请号:US13746118

    申请日:2013-01-21

    CPC classification number: H01J35/045 H01J3/021 H01J35/065 H01J2235/068

    Abstract: An X-ray source device includes a substrate, a cathode electrode on the substrate, an emitter on the cathode electrode, an insulation body around the cathode electrode, a gate electrode on the insulation body, a first secondary electron emission layer at a side wall of the gate electrode and emitting secondary electrons upon collision with an electron beam emitted by the emitter, and an anode electrode separated from the gate electrode.

    Abstract translation: X射线源装置包括衬底,衬底上的阴极电极,阴极电极上的发射极,阴极周围的绝缘体,绝缘体上的栅电极,侧壁上的第一二次电子发射层 并且与由发射极发射的电子束碰撞时发射二次电子,以及与栅电极分离的阳极电极。

    FIELD EMISSION DEVICES AND METHODS OF MANUFACTURING GATE ELECTRODES THEREOF
    10.
    发明申请
    FIELD EMISSION DEVICES AND METHODS OF MANUFACTURING GATE ELECTRODES THEREOF 审中-公开
    场发射装置及其制造门电极的方法

    公开(公告)号:US20150060757A1

    公开(公告)日:2015-03-05

    申请号:US14471713

    申请日:2014-08-28

    Abstract: A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode comprising a graphene sheet covering the opening. A method of manufacturing a gate electrode may comprise: forming a graphene thin film on one surface of a conductive film; forming a mask layer having an etching opening on another surface of the conductive film, wherein the etching opening exposes a portion of the conductive film; partially removing the conductive film through the etching opening to partially expose the graphene thin film; and/or removing the mask layer.

    Abstract translation: 场发射器件可以包括:发射器,包括阴极电极和由阴极电极支撑的电子发射源; 围绕发射极的绝缘间隔物,绝缘间隔物形成作为从电子发射源发射的电子的路径的开口; 和/或包括覆盖该开口的石墨烯片的栅电极。 制造栅电极的方法可以包括:在导电膜的一个表面上形成石墨烯薄膜; 在所述导电膜的另一表面上形成具有蚀刻开口的掩模层,其中所述蚀刻开口暴露所述导电膜的一部分; 通过蚀刻开口部分去除导电膜以部分地暴露石墨烯薄膜; 和/或去除掩模层。

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