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公开(公告)号：US20160043282A1
公开(公告)日：2016-02-11
申请号：US14920790
申请日：2015-10-22
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , Jong Min Jang , Won Young Roh , Daewoong Suh , Dae Sung Cho , Joon Sup Lee , Kyu Ho Lee , Chi Hyun In
CPC classification number: H01L33/405 , H01L33/0075 , H01L33/08 , H01L33/12 , H01L33/14 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/62 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
Abstract: The present invention relates to a light emitting diode and a method of manufacturing same. The light emitting diode includes: a first conductive semiconductor layer; a plurality of mesas that are disposed spaced apart from one another on the first conductive semiconductor layer, each mesa including an active layer and a second conductive semiconductor layer; reflective electrodes that are respectively disposed on the plurality of mesas and come into ohmic contact with the second conductive semiconductor layer; openings that cover the plurality of mesas and the first conductive semiconductor layer, are electrically insulated from the mesas, and expose the reflective electrodes to the upper region of each mesa; and a current spreading layer that comes into ohmic contact with the first conductive semiconductor layer. Thus, a light emitting diode that improves current spreading performance may be provided.
Abstract translation: 本发明涉及一种发光二极管及其制造方法。 发光二极管包括：第一导电半导体层; 在所述第一导电半导体层上彼此间隔开设置的多个台面，每个台面包括有源层和第二导电半导体层; 反射电极分别设置在多个台面上并与第二导电半导体层欧姆接触; 覆盖多个台面和第一导电半导体层的开口与台面电绝缘，并将反射电极暴露于每个台面的上部区域; 以及与第一导电半导体层欧姆接触的电流扩展层。 因此，可以提供改善电流扩展性能的发光二极管。
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公开(公告)号：US20140335677A1
公开(公告)日：2014-11-13
申请号：US14361117
申请日：2012-11-27
Applicant: Seoul Viosys Co., Ltd.
Inventor： Daewoong Suh , Kyu Ho Lee , Jon Min Jang , Chi Hyun In
IPC: H01L21/02
CPC classification number: H01L21/02664 , H01L21/0254 , H01L21/02587 , H01L33/0079
Abstract: The present invention provides a method for separating an epitaxial layer from a growth substrate, comprising growing an epitaxial layer including a plurality of layers on a growth substrate; etching an edge of at least one layer in the epitaxial layer to form a notch; forming a bonding layer on the epitaxial layer, contacting a bonding substrate onto the bonding layer, and then heating the bonding layer to a bonding temperature for joining the epitaxial layer and the bonding substrate; and cooling the bonding layer after the heating of the boding layer, so that the epitaxial layer and the bonding substrate are joined by the bonding layer, and the epitaxial layer is separated from the growth substrate, wherein the separating the epitaxial layer from the growth substrate starts with separation from the at least one layer where the notch is formed.
Abstract translation: 本发明提供了一种用于从生长衬底分离外延层的方法，包括在生长衬底上生长包括多个层的外延层; 蚀刻外延层中的至少一层的边缘以形成凹口; 在所述外延层上形成接合层，将接合基板接触到所述接合层上，然后将所述接合层加热至接合所述外延层和所述接合基板的接合温度; 并且在加热所述粘合层之后冷却所述接合层，使得所述外延层和所述接合基板通过所述接合层接合，并且所述外延层与所述生长基板分离，其中所述外延层与所述生长基板分离 从形成有凹口的至少一个层分离开始。
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公开(公告)号：US12183848B2
公开(公告)日：2024-12-31
申请号：US17964056
申请日：2022-10-12
Applicant: Seoul Viosys Co., Ltd.
Inventor： Seong Kyu Jang , Hong Suk Cho , Kyu Ho Lee , Chi Hyun In
Abstract: A light emitting device including a substrate, a first conductivity-type semiconductor layer, a mesa including a second conductivity-type semiconductor layer and an active layer, first and second contact electrodes respectively contacting the first and second conductivity-type semiconductor layers, a passivation layer covering the first and second contact electrodes, the mesa, and including first and second openings, and first and second bump electrodes electrically connected to the first and second contact electrodes through the first and second openings, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, the first contact electrode includes a reflective material, and a portion of the first opening is surrounded with a side surface of the mesa, and another portion of the first opening is not surrounded with the side surface of the mesa.
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公开(公告)号：US20230155072A1
公开(公告)日：2023-05-18
申请号：US18098030
申请日：2023-01-17
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chi Hyun In , Jun Yong Park , Kyu Ho Lee , Dae Woong Suh , Jong Hyeon Chae , Chang Hoon Kim , Sung Hyun Lee
IPC: H01L33/48
CPC classification number: H01L33/486 , H01L33/20
Abstract: A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.
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公开(公告)号：US11489087B2
公开(公告)日：2022-11-01
申请号：US16985077
申请日：2020-08-04
Applicant: Seoul Viosys Co., Ltd.
Inventor： Seong Kyu Jang , Hong Suk Cho , Kyu Ho Lee , Chi Hyun In
Abstract: A light emitting device including a substrate, a first semiconductor layer disposed on the substrate, a mesa including a second semiconductor layer and an active layer disposed on the first semiconductor layer, a first contact electrode contacting the first semiconductor layer, a second contact electrode contacting the second semiconductor layer, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode, and including a first opening disposed on the first contact electrode and a second opening disposed on the second contact electrode, and first and second bump electrodes electrically connected to the first and second contact electrodes through the first and second openings, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, and the first contact electrode includes an alloy layer.
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Patent Agency Ranking
公开(公告)号：US10756237B2
公开(公告)日：2020-08-25
申请号：US16571604
申请日：2019-09-16
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , Jong Min Jang , Won Young Roh , Daewoong Suh , Dae Sung Cho , Joon Sup Lee , Kyu Ho Lee , Chi Hyun In
IPC: H01L33/48 , H01L33/40 , H01L33/22 , H01L33/38 , H01L33/20 , H01L33/00 , H01L33/14 , H01L33/32 , H01L33/44 , H01L33/12 , H01L33/42 , H01L33/46 , H01L33/62 , H01L33/08
Abstract: A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.
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公开(公告)号：US10319884B2
公开(公告)日：2019-06-11
申请号：US15132887
申请日：2016-04-19
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , Jong Min Jang , Won Young Roh , Daewoong Suh , Dae Sung Cho , Joon Sup Lee , Kyu Ho Lee , Chi Hyun In
IPC: H01L33/00 , H01L33/40 , H01L33/22 , H01L33/20 , H01L33/38 , H01L33/14 , H01L33/32 , H01L33/44 , H01L33/12 , H01L33/42 , H01L33/46 , H01L33/48 , H01L33/62 , H01L33/08
Abstract: A light emitting diode includes a first conductive type semiconductor layer and a mesa disposed on the first conductive type semiconductor layer. The mesa includes an active layer and a second conductive type semiconductor layer. A reflective electrode is disposed on the mesa to be in ohmic-contact with the second conductive type semiconductor layer. A current spreading layer is disposed on the mesa and the reflective electrode. A first portion of the current spreading layer is in ohmic-contact with an upper surface of an end portion of the first conductive type semiconductor layer. A lower insulating layer is disposed between the mesa and the current spreading layer, and the reflective electrode and the current spreading layer. An upper insulating layer covers the current spreading layer and includes a first hole exposing a second portion of the current spreading layer that is disposed on an upper portion of the mesa.
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公开(公告)号：US20180261723A1
公开(公告)日：2018-09-13
申请号：US15971974
申请日：2018-05-04
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seong Kyu Jang , Kyu Ho Lee , Yeo Jin Yoon , Chi Hyun In , Jong Hyeon Chae , Hong Suk Cho
CPC classification number: H01L33/20 , H01L21/76 , H01L23/00 , H01L33/00 , H01L33/007 , H01L33/0095 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/46 , H01L33/48 , H01L33/62 , H01L2224/48247 , H01L2224/48257 , H01L2924/19107 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066
Abstract: An ultraviolet light emitting device is disclosed. An ultraviolet light emitting device according to a first embodiment of the disclosed technology comprises: a substrate having a first surface and a second surface facing the first surface; and a light emitting diode comprising a first type semiconductor layer, an active layer which emits ultraviolet light, and a second type semiconductor layer, the light emitting diode being formed on the first surface of the substrate, wherein the surface area of the substrate divided by the light emitting area of the light emitting diode may be ≤6.5.
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公开(公告)号：US09634193B2
公开(公告)日：2017-04-25
申请号：US14671491
申请日：2015-03-27
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , Jong Min Jang , Won Young Roh , Daewoong Suh , Dae Sung Cho , Joon Sup Lee , Kyu Ho Lee , Chi Hyun In
IPC: H01L33/12 , H01L33/40 , H01L33/22 , H01L33/20 , H01L33/38 , H01L33/00 , H01L33/14 , H01L33/32 , H01L33/44 , H01L33/42 , H01L33/46 , H01L33/48 , H01L33/62 , H01L33/08
CPC classification number: H01L33/405 , H01L33/0075 , H01L33/08 , H01L33/12 , H01L33/14 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/62 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
Abstract: A light-emitting diode including a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer and having a conductivity type different than that of the first semiconductor layer, and a reflective pattern disposed on the second semiconductor layer and configured to reflect light emitted from the active layer, the reflective pattern having heterogeneous metal layers and configured to absorb stress caused by differences in coefficient of thermal expansion between the heterogeneous metal layers.
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10.发明授权Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same 有权具有用于分离生长衬底的空隙的外延层晶片和使用其形成的半导体器件公开(公告)号：US09059012B2
公开(公告)日：2015-06-16
申请号：US14105919
申请日：2013-12-13
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Min Jang , Kyu Ho Lee , Chang Suk Han , Hwa Mok Kim , Daewoong Suh , Chi Hyun In , Jong Hyeon Chae
CPC classification number: H01L33/22 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L29/0657 , H01L33/0079 , H01L33/0095 , H01L33/20 , H01L33/24 , H01L33/32
Abstract: An epitaxial wafer having a void for separation of a substrate and a semiconductor device fabricated using the same. The epitaxial wafer includes a substrate, a mask pattern disposed on the substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern. The epitaxial layer includes a void disposed on the masking region. The epitaxial layer can be separated from the growth substrate by applying chemical lift-off or stress lift-off, at the void.
Abstract translation: 具有用于分离衬底的空隙的外延晶片和使用其制造的半导体器件。 外延晶片包括衬底，设置在衬底上并包括掩模区域和开口区域的掩模图案以及覆盖掩模图案的外延层。 外延层包括设置在掩蔽区域上的空隙。 通过在空隙处施加化学剥离或应力剥离，外延层可以与生长衬底分离。
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