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    METHOD FOR PRODUCING METAL NANOWIRES, METAL NANOWIRES, METHOD FOR PRODUCING SILVER NANOWIRES, AND SILVER NANOWIRES
    1.
    发明申请
    METHOD FOR PRODUCING METAL NANOWIRES, METAL NANOWIRES, METHOD FOR PRODUCING SILVER NANOWIRES, AND SILVER NANOWIRES 审中-公开
    用于生产金属纳米微粒的方法，金属纳米微粒，生产银纳米微粒的方法和银纳米微粒

    公开(公告)号：US20160121403A1

    公开(公告)日：2016-05-05

    申请号：US14893329

    申请日：2014-05-26

    Applicant: SHOWA DENKO K.K. ,  OSAKA UNIVERSITY

    Inventor： Katsuaki SUGANUMA ,  Jinting JIU ,  Masaya NOGI ,  Tohru SUGAHARA ,  Teppei ARAKI ,  Hiroshi UCHIDA ,  Hideki OHATA ,  Masanao HARA ,  Eri OKAZAKI

    IPC: B22F9/24 ,  B22F1/00

    CPC classification number: B22F9/24 ,  B22F1/0025 ,  B22F1/004 ,  B22F1/0044 ,  B22F2009/245 ,  B22F2301/255 ,  B22F2304/05 ,  B82Y30/00 ,  B82Y40/00

    Abstract: Provided are a metal nanowire production method capable of producing long and thin metal nanowires, and metal nanowires produced thereby. A metal nanowire production method comprising, a step for preparing a solution containing a metal salt, a polymer, at least one selected from a group consisting of halides, sulfides, carbonates, and sulfates, and an aliphatic alcohol, and a step for heating and reacting the solution at the temperature of 100° C. to 250° C. for 10 minutes or more while maintaining a practical shear stress applied to the solution at 10 mPa·m or less, wherein, during the heating and reacting step, ultraviolet-visible absorption spectrum change of the solution is measured, and a reaction time is controlled on the basis of the ultraviolet-visible absorption spectrum information.

    Abstract translation: 提供能够生产长而薄的金属纳米线的金属纳米线制造方法，由此制造金属纳米线。 一种金属纳米线制造方法，其特征在于，包括：制备含有金属盐，聚合物，选自卤化物，硫化物，碳酸盐和硫酸盐中的至少一种的溶液和脂肪族醇的工序， 使溶液在100℃至250℃的温度下反应10分钟以上，同时保持施加到10mPa·m以下的溶液的实际剪切应力，其中在加热和反应步骤期间， 测量溶液的可见吸收光谱变化，并且基于紫外 - 可见吸收光谱信息控制反应时间。

    BONDING DEVICE
    2.
    发明申请
    BONDING DEVICE 审中-公开

    公开(公告)号：US20190189587A1

    公开(公告)日：2019-06-20

    申请号：US16324528

    申请日：2017-06-16

    Applicant: OSAKA UNIVERSITY

    Inventor： Katsuaki SUGANUMA ,  Shijo NAGAO ,  Akio SHIMOYAMA ,  Shinya SEKI

    IPC: H01L23/00 ,  B23K1/00

    CPC classification number: H01L24/75 ,  B23K1/0008 ,  B23K2101/40 ,  H01L21/52 ,  H01L2224/75304 ,  H01L2224/7555 ,  H01L2224/75822 ,  H01L2224/7598

    Abstract: A bonding device (100) bonds at least one component (C) to a substrate (B) using a metal material (M). The bonding device (100) includes a wall section (20), at least one pressing section (40), and a rotational shaft (30). The rotational shaft (30) is fixed to the wall section (20). Each pressing section (40) has an arm (42) and a presser (43) or a substrate supporting member (90). The arm (42) extends from the rotational shaft (30). The arm (42) pivots about the rotational shaft (30). The presser (43) presses the component (C). The substrate supporting member (90) is disposed on a reference surface (142). The substrate supporting member (90) supports the substrate (B). The component (C) is bonded to the substrate (B) through point contact of the presser (43) with the component (C) or point contact of the substrate supporting member (90) with the reference surface (142).

    BONDING STRUCTURE PRODUCTION METHOD AND BONDING STRUCTURE
    8.
    发明申请
    BONDING STRUCTURE PRODUCTION METHOD AND BONDING STRUCTURE 有权

    公开(公告)号：US20220230988A1

    公开(公告)日：2022-07-21

    申请号：US17595826

    申请日：2020-05-28

    Applicant: OSAKA UNIVERSITY

    Inventor： Katsuaki SUGANUMA ,  Chuantong CHEN ,  Zheng ZHANG

    IPC: H01L23/00

    Abstract: A bonding structure production method for producing a bonding structure (100) includes at least bonding a semiconductor element (30) and a substrate (10) using a silver paste. The substrate (10) includes a die attachment portion (12) to which the semiconductor element (30) is to be bonded. The die attachment portion (12) includes an alumina layer (16) serving as a surface layer on a bonding side of the die attachment portion (12) to which the semiconductor element (30) is to be bonded. The silver paste contains a solvent and silver particles with a residual strain measured by X-ray diffractometry of at least 5.0%. Preferably, the silver particles have a volume-based 50% cumulative diameter of at least 100 nm and no greater than 50 μm.

    SILVER PARTICLE PRODUCING METHOD, SILVER PARTICLES, AND SILVER PASTE
    10.
    发明申请
    SILVER PARTICLE PRODUCING METHOD, SILVER PARTICLES, AND SILVER PASTE 审中-公开

    公开(公告)号：US20200086391A1

    公开(公告)日：2020-03-19

    申请号：US15746902

    申请日：2016-07-22

    Applicant: OSAKA UNIVERSITY

    Inventor： Katsuaki SUGANUMA ,  Jinting JIU

    IPC: B22F9/24 ,  B22F1/00 ,  C09J1/00 ,  C09J9/02 ,  H01B1/22

    Abstract: First, a liquid mixture is obtained by mixing at least a silver compound, a reductant, and a dispersant (S1). Then, the liquid mixture is heated to cause reaction between the silver compound and the reductant and generate first silver particles each having a sheet-like or plate-like shape and second silver particles each having a spherical shape or a shape closer to a sphere than the first silver particles and a particle diameter smaller than a maximum value of a length of a side of each of the first silver particles (S2).

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