Methods for protecting imaging elements of photoimagers during back side processing
    3.
    发明授权
    Methods for protecting imaging elements of photoimagers during back side processing 有权
    用于在背面处理期间保护光成像器的成像元件的方法

    公开(公告)号:US07919348B2

    公开(公告)日:2011-04-05

    申请号:US12139068

    申请日:2008-06-13

    IPC分类号: H01L21/00

    摘要: Methods for processing photoimagers include forming one or more protective layers over the image sensing elements of a photoimager. Protective layers may facilitate thinning of the substrates of photoimagers, as well as prevent contamination of the image sensing elements and associated optical features during back side processing of the photoimagers. Blind vias, which extend from the back side of a photoimager to bond pads carried by an active surface of the photoimager, may be formed through the back side. The vias may be filled with conductive material and, optionally, redistribution circuitry may be fabricated over the back side of the photoimager. Photoimagers including features at result from such processes are also disclosed.

    摘要翻译: 用于处理光影目标的方法包括在光成像仪的图像感测元件上形成一个或多个保护层。 保护层可以促进光刻胶的基材的变薄,并且可以防止在光成像器的背面处理期间图像感测元件和相关的光学特征的污染。 可以通过背面形成从光电成像仪的背面延伸到由光电成像仪的有源表面承载的接合焊盘的盲通孔。 通孔可以用导电材料填充,并且可选地,重新分布电路可以在光电成像仪的背面上制造。 还公开了包括这些处理结果的特征的光照器。

    Method of forming vias in semiconductor substrates and resulting structures
    4.
    发明授权
    Method of forming vias in semiconductor substrates and resulting structures 有权
    在半导体衬底和结构中形成通孔的方法

    公开(公告)号:US07855140B2

    公开(公告)日:2010-12-21

    申请号:US11781083

    申请日:2007-07-20

    IPC分类号: H01L21/4763

    CPC分类号: H01L21/76898

    摘要: Methods for forming through vias in a semiconductor substrate and resulting structures are disclosed. In one embodiment, a through via may be formed by forming a partial via from an active surface through a conductive element thereon and a portion of the substrate underlying the conductive element. The through via may then be completed by laser ablation or drilling from a back surface. In another embodiment, a partial via may be formed by laser ablation or drilling from the back surface of a substrate to a predetermined distance therein. The through via may be completed from the active surface by forming a partial via extending through the conductive element and the underlying substrate to intersect the laser-drilled partial via. In another embodiment, a partial via may first be formed by laser ablation or drilling from the back surface of the substrate followed by dry etching to complete the through via.

    摘要翻译: 公开了在半导体衬底中形成贯通孔的方法和所得到的结构。 在一个实施例中,可以通过从活性表面通过其上的导电元件和导电元件下面的基底的一部分形成部分通孔来形成通孔。 然后可以通过从后表面的激光烧蚀或钻孔来完成通孔。 在另一个实施例中,部分通孔可以通过激光烧蚀或从衬底的背面钻孔到其中的预定距离来形成。 通孔可以通过形成延伸通过导电元件和下面的衬底以与激光钻孔的部分通孔相交的部分通孔从活性表面完成。 在另一个实施例中,可以首先通过激光烧蚀或从衬底的背面进行钻孔形成部分通孔,然后通过干蚀刻来完成通孔。

    Systems and methods for testing microfeature devices
    8.
    发明授权
    Systems and methods for testing microfeature devices 有权
    用于测试微功能设备的系统和方法

    公开(公告)号:US07385412B2

    公开(公告)日:2008-06-10

    申请号:US11409060

    申请日:2006-04-24

    IPC分类号: G01R31/02 G01R31/26 H01L27/00

    CPC分类号: G01R31/2635 G01R31/2831

    摘要: Systems and methods for testing microelectronic imagers and microfeature devices are disclosed herein. In one embodiment, a method includes providing a microfeature workpiece including a substrate having a front side, a backside, and a plurality of microelectronic dies. The individual dies include an integrated circuit and a plurality of contact pads at the backside of the substrate operatively coupled to the integrated circuit. The method includes contacting individual contact pads with corresponding pins of a probe card. The method further includes testing the dies. In another embodiment, the individual dies can further comprise an image sensor at the front side of the substrate and operatively coupled to the integrated circuit. The image sensors are illuminated while the dies are tested.

    摘要翻译: 本文公开了用于测试微电子成像器和微特征器件的系统和方法。 在一个实施例中,一种方法包括提供微功能工件,其包括具有正面,背面和多个微电子管芯的衬底。 各个管芯包括集成电路和在衬底的背面可操作地耦合到集成电路的多个接触焊盘。 该方法包括使各个接触垫与探针卡的相应引脚接触。 该方法还包括测试模具。 在另一个实施例中,各个管芯还可以包括在衬底的前侧的图像传感器,并可操作地耦合到集成电路。 在测试模具时,图像传感器被照亮。