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公开(公告)号：US12061312B2
公开(公告)日：2024-08-13
申请号：US17459537
申请日：2021-08-27
发明人： Taejin Choi , Hyeonjin Shin , Changseok Lee , Sangwon Kim
IPC分类号： G02B1/113 , G02F1/1335 , G03F7/09 , H01L21/027 , H01L27/146 , H01L31/0216 , H01L31/052 , H10K50/86
CPC分类号： G02B1/113 , G03F7/091 , H01L21/0276 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14645 , H01L31/02168 , H01L31/052 , H10K50/86 , G02F1/133502
摘要： Provided are an amorphous boron nitride film and an anti-reflection coating structure including the amorphous boron nitride film. The amorphous boron nitride film has an amorphous structure including an sp3 hybrid bond and an sp2 hybrid bond, in which a ratio of the sp3 hybrid bond in the amorphous boron nitride film is less than about 20%.
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公开(公告)号：US12046656B2
公开(公告)日：2024-07-23
申请号：US17405619
申请日：2021-08-18
发明人： Yeonchoo Cho , Kyung-Eun Byun , Hyeonjin Shin
IPC分类号： H01L29/45
CPC分类号： H01L29/45 , H01L29/452 , H01L29/456
摘要： Disclosed is a semiconductor device including a surface-treated semiconductor layer. The semiconductor device includes a metal layer, a semiconductor layer electrically contacting the metal layer and having a surface treated with an element having an electron affinity of about 4 eV or greater, and a two-dimensional (2D) material layer disposed between the metal layer and the semiconductor layer and having a 2D crystal structure.
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公开(公告)号：US12027588B2
公开(公告)日：2024-07-02
申请号：US18056446
申请日：2022-11-17
发明人： Minhyun Lee , Minsu Seol , Yeonchoo Cho , Hyeonjin Shin
IPC分类号： H01L29/10 , H01L29/24 , H01L29/423
CPC分类号： H01L29/1033 , H01L29/24 , H01L29/42356 , H01L29/42364
摘要： A field effect transistor includes a substrate, a source electrode and a drain electrode on the substrate and apart from each other in a first direction, a plurality of channel layers, a gate insulating film surrounding each of the plurality of channel layers, and a gate electrode surrounding the gate insulating film. Each of the plurality of channel layers has ends contacting the source electrode and the drain electrode. The plurality of channel layers are spaced apart from each other in a second direction away from the substrate. The plurality of channel layers include a 2D semiconductor material.
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4.发明授权公开(公告)号：US12014991B2
公开(公告)日：2024-06-18
申请号：US17951474
申请日：2022-09-23
发明人： Keunwook Shin , Kibum Kim , Hyunmi Kim , Hyeonjin Shin , Sanghun Lee
IPC分类号： H01L23/538 , H01L23/00 , H01L23/532 , H01L29/16
CPC分类号： H01L23/5386 , H01L23/53204 , H01L23/5329 , H01L24/19 , H01L29/1606
摘要： An interconnect structure may include a graphene-metal barrier on a substrate and a conductive layer on the graphene-metal barrier. The graphene-metal barrier may include a plurality of graphene layers and metal particles on grain boundaries of each graphene layer between the plurality of graphene layers. The metal particles may be formed at a ratio of 1 atom % to 10 atom % with respect to carbon of the plurality of graphene layers.
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公开(公告)号：US11978704B2
公开(公告)日：2024-05-07
申请号：US16933544
申请日：2020-07-20
发明人： Changseok Lee , Hyeonjin Shin , Seongjun Park , Donghyun Im , Hyun Park , Keunwook Shin , Jongmyeong Lee , Hanjin Lim
IPC分类号： H01L23/532
CPC分类号： H01L23/53276 , H01L23/53238 , H01L23/53252 , H01L23/53266 , H01L2924/0002 , H01L2924/0002 , H01L2924/00
摘要： Example embodiments relate to a wiring structure, a method of forming the same, and an electronic device employing the same. The wiring structure includes a first conductive material layer and a nanocrystalline graphene layer on the first conductive material layer in direct contact with the metal layer.
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公开(公告)号：US11935790B2
公开(公告)日：2024-03-19
申请号：US17370480
申请日：2021-07-08
发明人： Minsu Seol , Minhyun Lee , Junyoung Kwon , Hyeonjin Shin , Minseok Yoo
IPC分类号： H01L21/8234 , H01L21/02 , H01L29/06 , H01L29/16 , H01L29/24 , H01L29/423 , H01L29/66 , H01L29/76 , H01L29/786
CPC分类号： H01L21/823412 , H01L21/02521 , H01L21/02527 , H01L21/02568 , H01L21/0259 , H01L21/823431 , H01L29/0665 , H01L29/1606 , H01L29/24 , H01L29/42392 , H01L29/66045 , H01L29/66969 , H01L29/7606 , H01L29/78696
摘要： Disclosed are a field effect transistor and a method of manufacturing the same. The field effect transistor includes a source electrode on a substrate, a drain electrode separated from the source electrode, and channels connected between the source electrode and the drain electrode, gate insulating layers, and a gate electrode. The channels may have a hollow closed cross-sectional structure when viewed in a first cross-section formed by a plane across the source electrode and the drain electrode in a direction perpendicular to the substrate. The gate insulating layers may be in the channels. The gate electrode may be insulated from the source electrode and the drain electrode by the gate insulating layers.
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公开(公告)号：US11906291B2
公开(公告)日：2024-02-20
申请号：US17145966
申请日：2021-01-11
发明人： Eunkyu Lee , Yeonchoo Cho , Sangwon Kim , Kyung-Eun Byun , Hyunjae Song , Hyeonjin Shin
IPC分类号： G01B15/02 , G01N23/2208 , H01L21/285 , H01L21/66 , H01L29/45 , G01N23/2273
CPC分类号： G01B15/02 , G01N23/2208 , G01N23/2273 , H01L21/28512 , H01L22/12 , H01L29/45 , G01N2223/085 , G01N2223/61
摘要： A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.
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公开(公告)号：US11881399B2
公开(公告)日：2024-01-23
申请号：US17949418
申请日：2022-09-21
发明人： Kyung-Eun Byun , Hyoungsub Kim , Taejin Park , Hoijoon Kim , Hyeonjin Shin , Wonsik Ahn , Mirine Leem , Yeonchoo Cho
IPC分类号： H01L21/02
CPC分类号： H01L21/02568 , H01L21/0262 , H01L21/02491 , H01L21/02658
摘要： A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.
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公开(公告)号：US11862704B2
公开(公告)日：2024-01-02
申请号：US18059660
申请日：2022-11-29
发明人： Jinseong Heo , Yunseong Lee , Sanghyun Jo , Keunwook Shin , Hyeonjin Shin
CPC分类号： H01L29/513 , H01L21/0228 , H01L21/02115 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02356 , H01L29/516
摘要： Provided are electronic devices and methods of manufacturing the same. An electronic device may include a substrate, a gate electrode on the substrate, a ferroelectric layer between the substrate and the gate electrode, and a carbon layer between the substrate and the ferroelectric layer. The carbon layer may have an sp2 bonding structure.
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公开(公告)号：US11626489B2
公开(公告)日：2023-04-11
申请号：US17541871
申请日：2021-12-03
发明人： Jaeho Lee , Hyeonjin Shin , Dongwook Lee , Seongjun Park , Kiyoung Lee , Eunkyu Lee , Sanghyun Jo , Jinseong Heo
IPC分类号： H01L31/0352 , H01L29/16 , H01L31/09 , H01L31/028 , H01L31/101 , H01L51/05 , H01L51/00 , H01L27/144 , H01L27/146 , H01L27/15 , H01L29/12 , H01L27/30
摘要： Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.
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