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公开(公告)号:US20230260923A1
公开(公告)日:2023-08-17
申请号:US18307277
申请日:2023-04-26
发明人: Ju-Il CHOI , Gyuho Kang , Un-Byoung Kang , Byeongchan Kim , Junyoung Park , Jongho Lee , Hyunsu Hwang
IPC分类号: H01L23/538 , H01L23/498 , H01L23/00 , H01L23/31 , H01L25/10
CPC分类号: H01L23/5389 , H01L23/49822 , H01L23/49811 , H01L23/49838 , H01L24/16 , H01L23/3128 , H01L25/105 , H01L23/5383 , H01L2224/16225
摘要: A semiconductor package including a redistribution substrate including an insulating layer and redistribution patterns in the insulating layer may be provided. Each of the redistribution patterns may include a via portion, a pad portion vertically overlapping the via portion, and a line portion extending from the pad portion. The via portion, the pad portion, and the line portion may be connected to each other to form a single object. A level of a bottom surface of the pad portion may be lower than a level of a bottom surface of the line portion. A width of the line portion may have a largest value at a level between a top surface of the line portion and the bottom surface of the line portion.
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公开(公告)号:US11682630B2
公开(公告)日:2023-06-20
申请号:US17349174
申请日:2021-06-16
发明人: Ju-Il Choi , Gyuho Kang , Un-Byoung Kang , Byeongchan Kim , Junyoung Park , Jongho Lee , Hyunsu Hwang
IPC分类号: H01L23/538 , H01L23/498 , H01L23/00 , H01L23/31 , H01L25/10
CPC分类号: H01L23/5389 , H01L23/3128 , H01L23/49811 , H01L23/49822 , H01L23/49838 , H01L23/5383 , H01L24/16 , H01L25/105 , H01L2224/16225
摘要: A semiconductor package including a redistribution substrate including an insulating layer and redistribution patterns in the insulating layer may be provided. Each of the redistribution patterns may include a via portion, a pad portion vertically overlapping the via portion, and a line portion extending from the pad portion. The via portion, the pad portion, and the line portion may be connected to each other to form a single object. A level of a bottom surface of the pad portion may be lower than a level of a bottom surface of the line portion. A width of the line portion may have a largest value at a level between a top surface of the line portion and the bottom surface of the line portion.
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公开(公告)号:US11508685B2
公开(公告)日:2022-11-22
申请号:US16992895
申请日:2020-08-13
发明人: Jihwan Suh , Un-Byoung Kang , Taehun Kim , Hyuekjae Lee , Jihwan Hwang , Sang Cheon Park
IPC分类号: H01L23/00 , H01L25/065 , H01L25/18
摘要: A semiconductor package includes a substrate, a first semiconductor chip disposed on the substrate, and a second semiconductor chip disposed on a top surface of the first semiconductor chip. The first semiconductor chip includes a conductive pattern disposed on the top surface of the first semiconductor chip and a first protective layer covering the top surface of the first semiconductor chip and at least partially surrounds the conductive pattern. The second semiconductor chip includes a first pad that contacts a first through electrode on a bottom surface of the second semiconductor chip. A second protective layer surrounds the first pad and covers the bottom surface of the second semiconductor chip. A third protection layer fills a first recess defined in the second protective layer to face the inside of the second protective layer. The first protective layer and the third protective layer contact each other.
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公开(公告)号:US11282792B2
公开(公告)日:2022-03-22
申请号:US16805890
申请日:2020-03-02
发明人: Young Kun Jee , Hae-Jung Yu , Sangwon Kim , Un-Byoung Kang , Jongho Lee , Dae-Woo Kim , Wonjae Lee
IPC分类号: H01L23/538 , H01L25/18 , H01L23/498
摘要: A semiconductor package includes a package substrate, a plurality of package terminals disposed on the bottom surface of the package substrate, and an interposer substrate disposed on the top surface of the package substrate, a plurality of interposer terminals disposed on the bottom surface of the interposer substrate and electrically connected to the package substrate, a first semiconductor chip disposed on the top surface of the interposer substrate, a second semiconductor chip disposed on the top surface of the interposer substrate and disposed to be horizontally separated from the first semiconductor chip, a first plurality of signal pads disposed on the top surface of the interposer substrate and electrically connected to wiring in the interposer substrate and one or more circuits in the first semiconductor chip, a second plurality of signal pads disposed on the top surface of the interposer substrate and electrically connected to wiring in the interposer substrate and to one or more circuits in the second semiconductor chip, and a plurality of dummy pads disposed outside of an area occupied by the first semiconductor chip or the second semiconductor chip from a top-down view and disposed on the top surface of the interposer substrate. Each pad of the first plurality of signal pads and the second plurality of signal pads is configured to transfer signals between the interposer substrate and a respective semiconductor chip, and each pad of the dummy pads is not configured to transfer signals between the interposer substrate and any semiconductor chip disposed thereon.
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公开(公告)号:US10804212B2
公开(公告)日:2020-10-13
申请号:US16280186
申请日:2019-02-20
发明人: Yeong-Kwon Ko , Jun-Yeong Heo , Un-Byoung Kang , Ja-Yeon Lee
IPC分类号: H01L25/04 , H01L23/544 , H01L23/00 , H01L23/31 , H01L25/065 , H01L25/18 , H01L21/78
摘要: A semiconductor package includes a package substrate, a first semiconductor device on an upper surface of the package substrate, a second semiconductor device on an upper surface of the first semiconductor device, a first connection bump attached to a lower surface of the package substrate, a second connection bump interposed between and electrically connected to the package substrate and the first semiconductor device, and a third connection bump interposed between and electrically connected to the first semiconductor device and the second semiconductor device. The first semiconductor device has an edge and a step at the edge.
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公开(公告)号:US09412636B2
公开(公告)日:2016-08-09
申请号:US14682231
申请日:2015-04-09
发明人: Chungsun Lee , Jung-Seok Ahn , Kwang-chul Choi , Un-Byoung Kang , Jung-Hwan Kim , Joonsik Sohn , Jeon Il Lee
IPC分类号: H01L21/58 , H01L21/683 , H01L21/304 , B32B37/12 , B32B37/18 , B32B37/24 , B32B37/26 , B32B38/04 , B32B38/10 , B32B38/16 , H01L21/02 , H01L21/768 , H01L23/00
CPC分类号: H01L21/6835 , B32B37/1284 , B32B37/18 , B32B37/24 , B32B37/26 , B32B38/04 , B32B38/10 , B32B38/162 , B32B2037/268 , B32B2315/08 , B32B2457/14 , H01L21/02057 , H01L21/02126 , H01L21/304 , H01L21/6836 , H01L21/76898 , H01L24/03 , H01L24/14 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2221/68372 , H01L2221/68381 , H01L2224/0401 , H01L2224/05025 , H01L2224/13023 , H01L2924/12042 , H01L2924/181 , Y10S438/977 , H01L2924/00
摘要: A method for processing substrates includes providing a bonding layer between a substrate and a carrier to bond the substrate to the carrier, processing the substrate while the substrate is supported by the carrier, and removing the bonding layer to separate the substrate from the carrier. The bonding layer may include a thermosetting release layer and thermosetting glue layers, wherein at least one of the thermosetting glue layers is provided on each side of the thermosetting release layer.
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公开(公告)号:US12094847B2
公开(公告)日:2024-09-17
申请号:US17329980
申请日:2021-05-25
发明人: Seyeong Seok , Un-Byoung Kang , Chungsun Lee
IPC分类号: H01L23/498 , H01L21/56 , H01L23/00 , H01L23/31 , H01L25/00 , H01L25/065 , H01L25/10 , H01L25/18
CPC分类号: H01L24/16 , H01L21/561 , H01L21/563 , H01L21/568 , H01L23/3121 , H01L23/49822 , H01L23/49838 , H01L24/13 , H01L24/17 , H01L24/73 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L25/18 , H01L2224/13005 , H01L2224/13024 , H01L2224/16146 , H01L2224/16227 , H01L2224/17181 , H01L2224/73104 , H01L2224/73259 , H01L2224/73267 , H01L2224/95001 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2225/1035 , H01L2924/1431 , H01L2924/1436 , H01L2924/1437 , H01L2924/1438 , H01L2924/1443
摘要: A semiconductor package may include: a first redistribution substrate; a first die above the first redistribution substrate; a second redistribution substrate on the first die; a first bump formed on the first die, and connecting the first die to the second redistribution substrate; a first molding portion enclosing the first die and surrounding the first bump; and an outer terminal on a bottom surface of the first redistribution substrate, wherein the second redistribution substrate comprises an insulating pattern and a conductive pattern in the insulating pattern to be in contact with the first bump, and wherein, at an interface of the second redistribution substrate and the first bump, the conductive pattern of the second redistribution substrate and the first bump are formed of the same material to form a single body or structure.
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公开(公告)号:US11955449B2
公开(公告)日:2024-04-09
申请号:US18054530
申请日:2022-11-10
发明人: Jihwan Suh , Un-Byoung Kang , Taehun Kim , Hyuekjae Lee , Jihwan Hwang , Sang Cheon Park
IPC分类号: H01L23/00 , H01L25/065 , H01L25/18
CPC分类号: H01L24/32 , H01L24/03 , H01L24/08 , H01L24/27 , H01L25/0657 , H01L25/18 , H01L2224/0346 , H01L2224/08146 , H01L2224/32059 , H01L2224/3207 , H01L2224/32145 , H01L2224/33181 , H01L2225/06541 , H01L2225/06565 , H01L2225/06586
摘要: A semiconductor package includes a substrate, a first semiconductor chip disposed on the substrate, and a second semiconductor chip disposed on a top surface of the first semiconductor chip. The first semiconductor chip includes a conductive pattern disposed on the top surface of the first semiconductor chip and a first protective layer covering the top surface of the first semiconductor chip and at least partially surrounds the conductive pattern. The second semiconductor chip includes a first pad that contacts a first through electrode on a bottom surface of the second semiconductor chip. A second protective layer surrounds the first pad and covers the bottom surface of the second semiconductor chip. A third protection layer fills a first recess defined in the second protective layer to face the inside of the second protective layer. The first protective layer and the third protective layer contact each other.
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公开(公告)号:US11658131B2
公开(公告)日:2023-05-23
申请号:US17168337
申请日:2021-02-05
发明人: Jin-Woo Park , Un-Byoung Kang , Jong Ho Lee
IPC分类号: H01L23/14 , H01L23/00 , H01L23/498
CPC分类号: H01L23/562 , H01L23/14 , H01L23/49816 , H01L24/14
摘要: A semiconductor package includes a first substrate including a circuit pattern and a dummy pattern on an upper face of the first substrate, a solder ball, a second substrate on the first substrate, and an underfill material layer between the first and second substrates. The underfill material layer wraps around the solder ball. The dummy pattern is not electrically connected to the circuit pattern. The first substrate includes a solder resist layer on the circuit pattern and the dummy pattern. The solder resist layer includes a first opening for exposing at least a part of the circuit pattern. The solder ball is in the first opening and electrically insulated from the dummy pattern by the solder resist layer. The second substrate is electrically connected to the first substrate by the solder ball. The second substrate is electrically insulated from the dummy pattern by the solder resist layer.
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公开(公告)号:US11222873B2
公开(公告)日:2022-01-11
申请号:US16936882
申请日:2020-07-23
发明人: Joonho Jun , Un-Byoung Kang , Sunkyoung Seo , Jongho Lee , Young Kun Jee
IPC分类号: H01L25/065 , H01L23/00
摘要: A semiconductor package may include first and second substrates, which are vertically stacked, a semiconductor device layer on a bottom surface of the second substrate to face a top surface of the first substrate, upper chip pads and an upper dummy pad on the top surface of the first substrate, penetration electrodes, which each penetrate the first substrate and are connected to separate, respective upper chip pads, lower chip pads on a bottom surface of the semiconductor device layer and electrically connected to separate, respective upper chip pads, and a lower dummy pad on the bottom surface of the semiconductor device layer and electrically isolated from the upper dummy pad. A distance between the upper and lower dummy pads in a horizontal direction that is parallel to the first substrate may be smaller than a diameter of the lower dummy pad.
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