Dielectrics using substantially longitudinally oriented insulated conductive wires
    8.
    发明授权
    Dielectrics using substantially longitudinally oriented insulated conductive wires 失效
    使用基本纵向取向的绝缘导线的电介质

    公开(公告)号:US08558311B2

    公开(公告)日:2013-10-15

    申请号:US11761534

    申请日:2007-06-12

    IPC分类号: H01L29/72

    摘要: A dielectric material is disclosed comprising a plurality of substantially longitudinally oriented wires which are coupled together, wherein each of the wires includes a conductive core comprising a first material and one or more insulating shell layers comprising a compositionally different second material disposed about the core. In one embodiment, a dielectric layer is disclosed comprising a substrate comprising an insulating material having a plurality of nanoscale pores defined therein having a pore diameter less than about 100 nm, and a conductive material disposed within the nanoscale pores. Methods are also disclosed to create a dielectric material layer comprising, for example, providing a plurality of wires, wherein each of the wires includes a core comprising a first material and one or more insulating layers comprising a compositionally different second material disposed about the core; substantially longitudinally orienting said plurality of wires along their long axes; coupling the wires together; and depositing an insulating coating on at least one of a top and/or a bottom end of the wires.

    摘要翻译: 公开了一种介电材料,其包括耦合在一起的多个基本上纵向定向的导线,其中每个导线包括导电芯,该导电芯包括第一材料和一个或多个绝缘壳层,所述绝缘壳层包括围绕芯布置的组成不同的第二材料。 在一个实施例中,公开了一种介电层,其包括基底,该基底包括绝缘材料,该绝缘材料具有限定在其中的孔径小于约100nm的多个纳米级孔,以及设置在纳米尺度孔内的导电材料。 还公开了形成电介质材料层的方法,该电介质材料层包括例如提供多条电线,其中每条电线包括包含第一材料和一个或多个绝缘层的芯,该绝缘层包括围绕芯设置的组成不同的第二材料; 沿其长轴基本纵向地定向所述多根电线; 将电线连接在一起; 以及在所述电线的顶端和/或底端中的至少一个上沉积绝缘涂层。

    Contact doping and annealing systems and processes for nanowire thin films
    10.
    发明授权
    Contact doping and annealing systems and processes for nanowire thin films 失效
    接触纳米线薄膜的掺杂和退火系统和工艺

    公开(公告)号:US07569503B2

    公开(公告)日:2009-08-04

    申请号:US11271488

    申请日:2005-11-10

    IPC分类号: H01L21/00

    摘要: Embodiments of the present invention are provided for improved contact doping and annealing systems and processes. In embodiments, a plasma ion immersion implantation (PIII) process is used for contact doping of nanowires and other nanoelement based thin film devices. According to further embodiments of the present invention, pulsed laser annealing using laser energy at relatively low laser fluences below about 100 mJ/cm2 (e.g., less than about 50 mJ/cm2, e.g., between about 2 and 18 mJ/cm2) is used to anneal nanowire and other nanoelement-based devices on substrates, such as low temperature flexible substrates, e.g., plastic substrates.

    摘要翻译: 提供本发明的实施例用于改进的接触掺杂和退火系统和工艺。 在实施例中,等离子体离子浸没注入(PIII)工艺用于纳米线和其它基于纳米元件的薄膜器件的接触掺杂。 根据本发明的另外的实施例,使用使用低于约100mJ / cm 2(例如,小于约50mJ / cm 2,例如约2至18mJ / cm 2)的相对低的激​​光能量密度的激光能量的脉冲激光退火 以在基底上退火纳米线和其它基于纳米元件的器件,例如低温柔性衬底,例如塑料衬底。