Method for manufacturing a semiconductor device substrate
    3.
    发明授权
    Method for manufacturing a semiconductor device substrate 有权
    半导体器件基板的制造方法

    公开(公告)号:US07317245B1

    公开(公告)日:2008-01-08

    申请号:US11279002

    申请日:2006-04-07

    IPC分类号: H01L23/48 H01L23/52

    摘要: Disclosed is a method for manufacturing a semiconductor device substrate. A substrate having no bus line and lead-in line is efficiently manufactured. In a step needing an electroplating process, conductive film is temporarily attached to circuit patterns in order to electrically connect all circuit patterns. A plating is formed in desired regions of the circuit patterns with a predetermined thickness in an electroplating method. The conductive film is completely removed while the substrate is manufactured so that the circuit patterns are electrically independent of one another, and the resulting substrate has no bus line and lead-in line.

    摘要翻译: 公开了半导体器件基板的制造方法。 没有总线和引入线的基板被有效地制造。 在需要电镀工艺的步骤中,导电膜临时连接到电路图案上,以便电连接所有电路图案。 在电镀方法中以预定的厚度在电路图案的期望区域中形成电镀。 在制造基板时,导电膜被完全去除,使得电路图案彼此电独立,并且所得到的基板没有总线和引入线。