公开(公告)号：US20050142867A1

公开(公告)日：2005-06-30

申请号：US10879220

申请日：2004-06-30

申请人： Hyung Park ,  Min Lee ,  Sang Lee ,  Hyun Sohn

发明人： Hyung Park ,  Min Lee ,  Sang Lee ,  Hyun Sohn

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/60 ,  H01L21/768

CPC分类号： H01L21/76897 ,  H01L21/7684

摘要： Disclosed is a method for forming a polysilicon plug of a semiconductor device. The method comprises the steps of: forming a stacked pattern of a wordline and a hard mask film on a semiconductor substrate comprising a cell region and a peripheral circuit region; forming a spacer on a sidewall of the stacked pattern; forming an interlayer insulating film on the semiconductor substrate; polishing the interlayer insulating film via a CMP process using the hard mask film as a polishing barrier film; forming a barrier film on the semiconductor substrate including the interlayer insulating film; selectively etching the barrier film and the interlayer insulating film to form a landing plug contact hole; depositing a polysilicon film filling the landing plug contact hole on the semiconductor substrate; blanket-etching the polysilicon film using the barrier film as an etching barrier film; and polishing the polysilicon film and the barrier film using the hard mask film as a polishing barrier film to form a polysilicon plug.

摘要翻译： 公开了一种用于形成半导体器件的多晶硅插塞的方法。 该方法包括以下步骤：在包括单元区域和外围电路区域的半导体衬底上形成字线和硬掩模膜的堆叠图案; 在所述堆叠图案的侧壁上形成间隔物; 在半导体衬底上形成层间绝缘膜; 通过使用硬掩模膜作为抛光阻挡膜的CMP工艺来研磨层间绝缘膜; 在包括层间绝缘膜的半导体衬底上形成阻挡膜; 选择性地蚀刻阻挡膜和层间绝缘膜以形成着陆塞接触孔; 在所述半导体衬底上沉积填充所述着地插头接触孔的多晶硅膜; 使用阻挡膜作为蚀刻阻挡膜对多晶硅膜进行绝缘蚀刻; 并使用硬掩模膜作为抛光阻挡膜研磨多晶硅膜和阻挡膜以形成多晶硅插塞。

公开(公告)号：US20060124228A1

公开(公告)日：2006-06-15

申请号：US11297831

申请日：2005-12-07

申请人： Sang Lee ,  Joon Shin ,  Hyung Park ,  Geum Yun

发明人： Sang Lee ,  Joon Shin ,  Hyung Park ,  Geum Yun

IPC分类号： B29C65/02 ,  B32B27/00 ,  B29D31/00

CPC分类号： B32B15/08 ,  B32B15/20 ,  B32B27/281 ,  B32B37/0038 ,  B32B37/203 ,  B32B2037/243 ,  B32B2038/168 ,  B32B2250/02 ,  B32B2255/06 ,  B32B2255/26 ,  B32B2274/00 ,  B32B2305/55 ,  B32B2307/31 ,  B32B2307/546 ,  B32B2307/5825 ,  B32B2309/02 ,  B32B2311/12 ,  B32B2457/08 ,  H05K3/022 ,  H05K3/386 ,  H05K2201/0141 ,  H05K2201/0358 ,  H05K2203/0759 ,  H05K2203/1545 ,  Y10T156/1007

摘要： The present invention relates to an apparatus and method for manufacturing a copper clad laminate, which can achieve a substantial improvement in the peel strength between a thermoplastic liquid crystal polymer and a copper foil. The apparatus comprises: a coating means for thinly coating the surface of a copper foil with a thermoplastic liquid crystal polymer solution; a solvent removal means for drying the coated liquid crystal polymer solution to remove the solvent of the coated solution; and a thermal pressing means for laminating and thermally pressing a thermoplastic liquid crystal polymer film onto the copper foil using heating rolls so as to make a copper clad laminate.

摘要翻译： 本发明涉及一种用于制造覆铜层压板的装置和方法，其可以实现热塑性液晶聚合物和铜箔之间的剥离强度的显着提高。 该装置包括：用热塑性液晶聚合物溶液薄涂铜表面的涂层装置; 用于干燥涂覆的液晶聚合物溶液以除去涂布溶液的溶剂的溶剂去除装置; 以及热压装置，用于使用加热辊将热塑性液晶聚合物膜层压并热压到铜箔上，以制成覆铜层压板。

公开(公告)号：US20050148186A1

公开(公告)日：2005-07-07

申请号：US10999263

申请日：2004-11-30

申请人： Jong Jung ,  Sang Lee ,  Hyung Park

发明人： Jong Jung ,  Sang Lee ,  Hyung Park

IPC分类号： H01L21/304 ,  C09G1/02 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/44 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76819 ,  C09G1/02 ,  H01L21/31053

摘要： Disclosed herein are a CMP slurry composition with high-planarity and a CMP process for polishing a dielectric film using the same. More specifically, a CMP slurry composition with high-planarity includes a carbon compound having tens of thousands of carboxyl groups and having a molecular weight ranging from hundreds of thousands to millions, an abrasive, and water. A CMP process for polishing a dielectric film utilizes the disclosed slurry composition. The slurry composition enables complete and overall planarization of the dielectric film by polishing the part of the film having a higher step difference through CMP process. Accordingly, the disclosed slurry composition is useful for the CMP process of all semiconductor devices including those having ultrafine patterns.

摘要翻译： 本文公开了具有高平面性的CMP浆料组合物和使用其的用于抛光电介质膜的CMP工艺。 更具体地说，具有高平面度的CMP浆料组合物包括具有数万个羧基并且分子量范围从数十万到数百万的碳化合物，研磨剂和水。 用于抛光电介质膜的CMP工艺利用所公开的浆料组合物。 浆料组合物通过CMP工艺研磨具有较高阶梯差的薄膜的部分，能够使电介质薄膜完全和全面平坦化。 因此，所公开的浆料组合物对于包括具有超细图案的半导体器件的所有半导体器件的CMP工艺是有用的。

公开(公告)号：US20050095834A1

公开(公告)日：2005-05-05

申请号：US10875052

申请日：2004-06-22

申请人： Sang Lee ,  Jong Shin ,  Hyung Park

发明人： Sang Lee ,  Jong Shin ,  Hyung Park

IPC分类号： H01L21/283 ,  H01L21/304 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/60 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242

CPC分类号： H01L21/76897 ,  H01L21/7684 ,  H01L27/10855 ,  H01L27/10873 ,  H01L27/10888

摘要： Disclosed is a method of manufacturing a semiconductor device. The method includes the steps of forming gates on a substrate, forming junction areas on a surface of the substrate, forming a first BPSG layer on a resultant structure of the substrate, performing a first CVD process for the first BPSG layer, forming a second BPSG layer on the first BPSG layer, forming a landing plug contact, depositing a polysilicon layer on a resultant structure of the substrate, and performing a second CMP process for the polysilicon layer, the second BPSG layer and the nitride hard mask. The CMP processes are carried by using acid slurry having a high polishing selectivity with respect to the nitride layer, so a step difference between the cell region and the peripheral region is removed, thereby simplifying the semiconductor manufacturing process and removing a dishing phenomenon.

摘要翻译： 公开了半导体器件的制造方法。 该方法包括以下步骤：在衬底上形成栅极，在衬底的表面上形成接合区域，在衬底的所得结构上形成第一BPSG层，对第一BPSG层执行第一CVD工艺，形成第二BPSG 在第一BPSG层上形成着色插头接触，在所得衬底的所得结构上沉积多晶硅层，以及对多晶硅层，第二BPSG层和氮化物硬掩模执行第二CMP工艺。 通过使用相对于氮化物层具有高抛光选择性的酸性浆料来进行CMP处理，从而消除了单元区域和外围区域之间的阶跃差异，从而简化了半导体制造工艺并消除了凹陷现象。

公开(公告)号：US20050279995A1

公开(公告)日：2005-12-22

申请号：US11007352

申请日：2004-12-09

申请人： Jung Shin ,  Tae Lee ,  Sang Lee ,  Hyung Park

发明人： Jung Shin ,  Tae Lee ,  Sang Lee ,  Hyung Park

IPC分类号： H01L29/08 ,  H01L51/05

CPC分类号： H01L51/052 ,  C08L63/00 ,  G03F7/027 ,  G03F7/038 ,  H01L51/0052 ,  C08L2666/02

摘要： A composition for preparing an organic insulating film. The composition includes a functional group-containing monomer, an initiator generating an acid or a radical upon light irradiation or heating, and a linear polymer. Further, an organic insulating film prepared from the composition. Since the organic insulating film has a crosslinked structure, it exhibits solvent resistance in subsequent processes. Further, when the organic insulating film is used to fabricate a transistor, it can improve the electrical properties of the transistor.

摘要翻译： 一种制备有机绝缘膜的组合物。 该组合物包含含官能团的单体，在光照射或加热时产生酸或自由基的引发剂和线性聚合物。 此外，由组合物制备的有机绝缘膜。 由于有机绝缘膜具有交联结构，因此在随后的工艺中具有耐溶剂性。 此外，当有机绝缘膜用于制造晶体管时，其可以改善晶体管的电性能。

公开(公告)号：US20070046856A1

公开(公告)日：2007-03-01

申请号：US11552289

申请日：2006-10-24

申请人： Sang Lee ,  Jung Kang ,  Sang Lee

发明人： Sang Lee ,  Jung Kang ,  Sang Lee

IPC分类号： G02F1/1335

CPC分类号： G02B6/0038 ,  G02B6/0053 ,  G02F2001/133607

摘要： An LCD device has scratch-resistant property without using a protection sheet and can provide enhanced brightness. The LCD device includes a light path regulating member. The member includes a first prism sheet having first prisms of which apex has a round shape. The first prism sheet concentrates light supplied from a lamp to output the concentrated light. An anti-glare polarizing plate uniformly polarizes polarized planes of the concentrated light and provides the polarized light to the lower substrate. The anti-glare polarizing plate is arranged below the lower substrate of an LCD panel, and an uppermost prism sheet of optical sheets is non-matte-treated and has round-treated apexes. In spite of the absence of the protection sheet, the scratch-resistant property of the uppermost prism sheet and the brightness of the LCD panel may be enhanced.

摘要翻译： 液晶显示装置具有耐刮擦性能，不使用保护片，可提供更高的亮度。 LCD装置包括光路调节部件。 该构件包括具有顶点具有圆形形状的第一棱镜的第一棱镜片。 第一棱镜片集中从灯提供的光以输出集中的光。 抗眩光偏光板使聚光的偏振面均匀地偏振，并向下基板提供偏振光。 防眩光偏振板配置在LCD面板的下基板的下方，最上方的光学片棱镜片未经磨光处理，具有圆形处理的顶点。 尽管不存在保护片，但是可以提高最上面的棱镜片的耐擦伤性和LCD面板的亮度。

公开(公告)号：US20050158469A1

公开(公告)日：2005-07-21

申请号：US11080748

申请日：2005-03-15

申请人： Young Park ,  Keun Yoo ,  Hong Lim ,  Sang Lee ,  Ik Lee ,  Sang Lee ,  Hyun Kyung ,  Jang Bae

发明人： Young Park ,  Keun Yoo ,  Hong Lim ,  Sang Lee ,  Ik Lee ,  Sang Lee ,  Hyun Kyung ,  Jang Bae

IPC分类号： H01L21/20 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45538 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/5096

摘要： A reactor for thin film deposition and a thin film deposition method using the reactor are provided. The reactor includes: a reactor block which receives a wafer transferred through a wafer transfer slit; a wafer block which is installed in the reactor block to receive the wafer thereon; a top plate disposed to cover the reactor block; a shower head which is mounted on the bottom of the top plate and diffuses gas toward the wafer; and an exhaust unit which exhausts the gas from the reactor block. A first supply pipeline which supplies a first reactant gas and/or an inert gas to the wafer; a second supply pipeline which supplies a second reactant gas and/or an inert gas to the wafer; and a plasma generator which generates plasma between the wafer block and shower head are included. The shower head includes: a first supply path connected to the first supply pipeline; a plurality of first diffuse holes formed in the bottom of the shower head at a constant interval; a first main path formed parallel to the plane of the shower head and connecting the plurality of first diffuse holes and the first supply path; a second supply path connected to the second supply pipeline; a plurality of second diffuse holes formed in the bottom of the shower head at a constant interval as the plurality of the first diffuse holes; and a second main path formed parallel to the plane of the shower head at a different height from the second main path and connecting the plurality of second diffuse holes and the second supply path.

摘要翻译： 提供了一种用于薄膜沉积的反应器和使用该反应器的薄膜沉积方法。 反应器包括：反应器块，其接收通过晶片传送狭缝转移的晶片; 晶片块，其安装在反应器块中以在其上接收晶片; 设置成覆盖反应器块的顶板; 淋浴头，其安装在顶板的底部并将气体向晶片扩散; 以及从反应器块排出气体的排气单元。 一种向晶片提供第一反应气体和/或惰性气体的第一供应管线; 第二供应管线，其向所述晶片供给第二反应气体和/或惰性气体; 并且包括在晶片块和淋浴头之间产生等离子体的等离子体发生器。 淋浴头包括：连接到第一供应管道的第一供应路径; 以恒定的间隔形成在所述淋浴喷头的底部的多个第一扩散孔; 第一主路径，其平行于所述淋浴头的平面形成，并且连接所述多个第一扩散孔和所述第一供给路径; 连接到第二供应管线的第二供应路径; 多个第二扩散孔，作为多个第一扩散孔以恒定的间隔形成在所述淋浴喷头的底部; 以及第二主路径，其与所述淋浴喷头的平面平行，与所述第二主路径不同的高度，并且连接所述多个第二扩散孔和所述第二供应路径。

公开(公告)号：US20070054387A1

公开(公告)日：2007-03-08

申请号：US10580556

申请日：2004-05-20

申请人： Sang Lee ,  Sang Lee

发明人： Sang Lee ,  Sang Lee

IPC分类号： C12P7/46 ,  C12N1/20

CPC分类号： C12P7/46 ,  C12N1/20 ,  C12R1/01

摘要： The present invention relates to novel rumen bacterial mutants resulted from the disruption of a lactate dehydrogenase gene (ldhA) and a pyruvate formate-lyase gene (pfl) (which are involved in the production of lactic acid, formic acid and acetic acid) from rumen bacteria; a novel bacterial mutant (Mannheimia sp. LPK7) having disruptions of a lactate dehydrogenase gene (ldhA), a pyruvate formate-lyase gene (pfl), a phosphotransacetylase gene (pta), and a acetate kinase gene (ackA); a novel bacterial mutant (Mannheimia sp. LPK4) having disruptions of a lactate dehydrogenase gene (ldhA), a pyruvate formate-lyase gene (pfl) and a phosphoenolpyruvate carboxylase gene (ppc) involved in the immobilization of CO2 in a metabolic pathway of producing succinic acid; and a method for producing succinic acid, which is characterized by the culture of the above mutants in anaerobic conditions. The inventive bacterial mutants have the property of producing succinic acid at high concentration while producing little or no organic acids, as compared to the prior wild-type strains of producing various organic acids. Thus, the inventive bacterial mutants are useful as strains for the industrial production of succinic acid.

摘要翻译： 本发明涉及由瘤胃中的乳酸脱氢酶基因（ldhA）和丙酮酸甲酸裂解酶基因（pfl）（其涉及乳酸，甲酸和乙酸的生产）的破坏而产生的新型瘤胃细菌突变体 菌; 具有乳酸脱氢酶基因（ldhA），丙酮酸甲酸裂解酶基因（pfl），磷酸转乙酰酶基因（pta）和乙酸激酶基因（ackA）的破坏的新型细菌突变体（曼氏血清型LPK7）; 具有破坏乳酸脱氢酶基因（ldhA），丙酮酸甲酸裂合酶基因（pfl）和磷酸烯醇丙酮酸羧化酶基因（ppc）的新型细菌突变体（曼氏原乳杆菌LPK4）涉及将CO 2固定在生产代谢途径中 琥珀酸; 以及生产琥珀酸的方法，其特征在于在厌氧条件下培养上述突变体。 与生产各种有机酸的现有野生型菌株相比，本发明的细菌突变体具有以高浓度生产琥珀酸的同时产生很少或不含有机酸的性质。 因此，本发明的细菌突变体可用作工业生产琥珀酸的菌株。

公开(公告)号：US20060201428A1

公开(公告)日：2006-09-14

申请号：US11436473

申请日：2006-05-18

申请人： Young Park ,  Keun Yoo ,  Hong Lim ,  Sang Lee ,  Ik Lee ,  Sang Lee ,  Hyun Kyung ,  Jang Bae

发明人： Young Park ,  Keun Yoo ,  Hong Lim ,  Sang Lee ,  Ik Lee ,  Sang Lee ,  Hyun Kyung ,  Jang Bae

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/5096

摘要： Provided is a shower head used in a reactor for thin film deposition, and a method of fabricating the shower head. The shower head for injecting gases onto a wafer mounted on a wafer block includes: a first supply path supplying a first reaction gas and a second supply path supplying a second reaction gas; a first main path connected to the first supply path and in the plane of the shower head, a plurality of first sub-paths diverging from the first main path in the plane of the shower head, a plurality of first diffuse holes formed regularly spaced on a bottom surface of the shower head, and a plurality of first diffuse paths connecting the plurality of first sub-paths to the plurality of first diffuse holes; a second main path connected to the second supply path in the plane of the shower head and not contacting the first main path, a plurality of second sub-paths diverging from the second main path in the plane of the shower head, a plurality of second diffuse holes formed regularly spaced on a bottom surface of the shower head, and a plurality of second diffuse paths connecting the plurality of second sub-paths and the plurality of second diffuse holes; and a sealing unit sealing open ends of the first and second main paths and open ends of the first and second sub-paths formed in the shower head.

摘要翻译： 本发明提供一种用于薄膜沉积用反应器的淋浴喷头及其制造方法。 用于将气体喷射到安装在晶片块上的晶片上的喷头包括：供应第一反应气体的第一供应路径和供应第二反应气体的第二供应路径; 连接到第一供应路径并且在淋浴喷头的平面中的第一主路径，从喷淋头的平面中的第一主路径发散的多个第一子路径，多个第一扩散孔，其规则间隔开地形成 淋浴头的底面以及将多个第一子路径连接到多个第一扩散孔的多个第一漫射路径; 第二主路径，其连接到所述淋浴喷头的平面中的所述第二供应路径，并且不接触所述第一主路径;多个第二子路径，其从所述淋浴喷头的平面中的所述第二主路径发散;多个第二主路径， 在喷淋头的底面上规则间隔地形成的扩散孔以及连接多个第二子路径和多个第二扩散孔的多个第二漫射路径; 以及密封单元，密封形成在所述淋浴喷头中的所述第一和第二子路径的所述第一主路径和所述第二主路径的开放端部。

公开(公告)号：US20070081355A1

公开(公告)日：2007-04-12

申请号：US11502025

申请日：2006-08-10

申请人： Sang Lee ,  Eun Kang ,  Sang Lee

发明人： Sang Lee ,  Eun Kang ,  Sang Lee

IPC分类号： B64D47/06 ,  F21V5/00

CPC分类号： G02B6/0068 ,  G02B6/0055 ,  G02B6/0085 ,  G02B6/009 ,  G02F1/133615

摘要： A light generating unit includes a plurality of light sources generating lights with different wavelengths. Among the light sources, at least one is disposed on a horizontal surface which differs in height from horizontal surfaces on which the other light sources are disposed. A display device includes the above light generating unit and a display panel for displaying an image by using the lights generated from the light generating unit. A method of improving color uniformity in the display device includes arranging the light sources as in the light generating unit.

摘要翻译： 光产生单元包括产生具有不同波长的光的多个光源。 在光源中，至少一个设置在与设置其他光源的水平表面不同的水平表面上。 显示装置包括上述光产生单元和用于通过使用从发光单元产生的光来显示图像的显示面板。 改善显示装置中的色彩均匀性的方法包括如光发生单元那样布置光源。