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29 条记录 (耗时 0.015 秒)

    Method of and apparatus for manufacturing thin solar battery
    1.
    发明授权
    Method of and apparatus for manufacturing thin solar battery 失效
    薄型太阳能电池的制造方法和装置

    公开(公告)号：US06096569A

    公开(公告)日：2000-08-01

    申请号：US201660

    申请日：1998-12-01

    申请人： Yoshinori Matsuno ,  Yoshitatsu Kawama ,  Hiroaki Morikawa ,  Satoshi Arimoto ,  Hisao Kumabe ,  Toshio Murotani

    发明人： Yoshinori Matsuno ,  Yoshitatsu Kawama ,  Hiroaki Morikawa ,  Satoshi Arimoto ,  Hisao Kumabe ,  Toshio Murotani

    IPC分类号： H01L31/04 ,  H01L31/042 ,  H01L31/18

    CPC分类号： H01L31/0504 ,  H01L31/022441 ,  H01L31/048 ,  H01L31/0516 ,  H01L31/1892 ,  Y02E10/50

    摘要： A process of forming electrodes is simplified during modularizing of a solar battery. According to the manufacturing method and the manufacturing apparatus, a thin solar battery is manufactured at a reduced cost and with a better yield. Using a robot which includes a suction chip which can handle a semiconductor film 2 without any damage which is separated from a particular substrate 1, the semiconductor films 2 are each accurately placed through a transparent resin 3 onto a glass substrate 7 which serves as a window of a solar battery, and p-type and n-type electrodes are printed at a time on the semiconductor films 2 which are arranged. Further, since a monolithic tab electrode is soldered to connect the electrodes, the manufacturing processes of the solar battery are simplified.

    摘要翻译： 在太阳能电池的模块化期间简化了形成电极的工艺。 根据制造方法和制造装置，以更低的成本和更好的产量制造薄的太阳能电池。 使用包括能够处理半导体膜2而不会从特定基板1分离的任何损伤的吸引芯片的机器人，将半导体膜2分别通过透明树脂3准确地放置在作为窗口的玻璃基板7上 的太阳能电池，并且在配置的半导体膜2上一次印刷p型和n型电极。 此外，由于整体式接片电极被焊接以连接电极，所以太阳能电池的制造工艺被简化。

    Method of making solar cells
    3.
    发明授权
    Method of making solar cells 失效
    制造太阳能电池的方法

    公开(公告)号：US6037088A

    公开(公告)日：2000-03-14

    申请号：US799570

    申请日：1997-02-12

    申请人： Hiroaki Morikawa ,  Yoshitatsu Kawama ,  Satoshi Arimoto ,  Yukio Shinoda ,  Takashi Ishihara

    发明人： Hiroaki Morikawa ,  Yoshitatsu Kawama ,  Satoshi Arimoto ,  Yukio Shinoda ,  Takashi Ishihara

    IPC分类号： H01L31/04 ,  H01L31/0203

    CPC分类号： H01L31/022458 ,  H01L31/048 ,  H01L31/0682 ,  Y02E10/547

    摘要： A method of making the solar cells includes a step of forming a first electroconductive region on a first surface of a semiconductor substrate having through-holes defined therein and also having an emitter layer formed thereon, a step of disposing the semiconductor substrate on a transparent substrate with a second surface of the semiconductor substrate opposite to the first surface thereof confronting the transparent substrate through a resinous material, a step of bonding the semiconductor substrate and the transparent substrate together by means of the resinous material, and a step of forming a second electroconductive region on the first electroconductive region.

    摘要翻译： 制造太阳能电池的方法包括在其上形成有通孔的半导体衬底的第一表面上形成第一导电区域并且还具有形成在其上的发射极层的步骤，将半导体衬底设置在透明衬底上 其中半导体衬底的与通过树脂材料面对透明衬底的第一表面相对的第二表面，通过树脂材料将半导体衬底和透明衬底接合在一起的步骤，以及形成第二导电 区域在第一导电区域上。

    Method of producing thin film solar cell
    6.
    发明授权
    Method of producing thin film solar cell 失效
    制造薄膜太阳能电池的方法

    公开(公告)号：US5963790A

    公开(公告)日：1999-10-05

    申请号：US879367

    申请日：1997-06-20

    申请人： Yoshinori Matsuno ,  Hideo Naomoto ,  Satoshi Arimoto ,  Hiroaki Morikawa ,  Hajime Sasaki

    发明人： Yoshinori Matsuno ,  Hideo Naomoto ,  Satoshi Arimoto ,  Hiroaki Morikawa ,  Hajime Sasaki

    IPC分类号： H01L31/04 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/18 ,  H01L33/00

    CPC分类号： H01L31/022433 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/1804 ,  H01L33/0079 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/977

    摘要： A method for producing a thin film solar cell includes preparing a substrate of a low purity material and having opposed front and rear surfaces; forming an insulating film on the front surface of the substrate; forming a second conductivity type active layer of a high purity material on the insulating film with a front surface exposed; forming a second conductivity type semiconductor region within the active layer, reaching the front surface, to produce a p-n junction for light-to-electricity conversion; forming an anti-reflection film on the front surface of the active layer, the anti-reflection film reducing reflection of incident light; forming a surface electrode in contact with the front surface of the active layer; adhering the front surface side of the active layer to a supporting plate and selectively etching the low purity substrate from the rear surface to form a supporting substrate supporting the active layer; and forming a rear electrode on the rear surface of the supporting substrate contacting the active layer.

    摘要翻译： 一种制造薄膜太阳能电池的方法包括制备低纯度材料的基片并具有相对的前表面和后表面; 在所述基板的前表面上形成绝缘膜; 在绝缘膜上形成具有暴露的前表面的高纯度材料的第二导电型有源层; 在有源层内形成第二导电类型的半导体区域，到达前表面，以产生用于光电转换的p-n结; 在有源层的正面上形成防反射膜，防反射膜减少入射光的反射; 形成与所述有源层的前表面接触的表面电极; 将有源层的前表面侧粘附到支撑板上，并从后表面选择性地蚀刻低纯度基板以形成支撑有源层的支撑基板; 以及在与有源层接触的支撑基板的后表面上形成后电极。

    Semiconductor laser device
    8.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5048037A

    公开(公告)日：1991-09-10

    申请号：US553579

    申请日：1990-07-18

    申请人： Satoshi Arimoto ,  Toshitaka Aoyagi

    发明人： Satoshi Arimoto ,  Toshitaka Aoyagi

    IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/323

    CPC分类号： H01S5/2232 ,  H01S5/2237 ,  H01S5/32325

    摘要： A visible light semiconductor laser device of an SBA type in which a current blocking layer of a second conductivity type is disposed on a semiconductor substrate of a first conductivity type and a stripe-shaped groove current path is provided in the current blocking layer. A lower cladding structure of the first conductivity type and a GaInP active layer are sequentially epitaxially grown on the current blocking layer and in the stripe-shaped groove. The lower cladding structure includes a first cladding layer of AlGaAs disposed on the current blocking layer and in the stripe-shaped groove and a second cladding layer of AlGaInP which is sufficiently thin not to cause inferior growth of the active layer disposed on the first cladding layer.

    摘要翻译： 在电流阻挡层中设置有在第一导电类型的半导体衬底上设置有第二导电类型的电流阻挡层和条形槽电流通路的SBA型可见光半导体激光器件。 第一导电类型的下包层结构和GaInP有源层在电流阻挡层和条形沟槽中顺序地外延生长。 下包层结构包括设置在电流阻挡层和条形槽中的AlGaAs的第一包层和AlGaInP的第二包覆层，该AlGaInP的第二包层足够薄，不会导致设置在第一包层上的有源层的生长不良 。

    Solar cell, a method of producing the same and a semiconductor producing apparatus
    9.
    发明授权
    Solar cell, a method of producing the same and a semiconductor producing apparatus 失效
    太阳能电池，其制造方法以及半导体制造装置

    公开(公告)号：US06340640B1

    公开(公告)日：2002-01-22

    申请号：US08933381

    申请日：1997-09-19

    申请人： Yoichiro Nishimoto ,  Satoshi Arimoto ,  Keisuke Namba

    发明人： Yoichiro Nishimoto ,  Satoshi Arimoto ,  Keisuke Namba

    IPC分类号： H01L21302

    CPC分类号： H01L31/1804 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

    摘要： In preparing a solar cell, minute projections and recesses are uniformly formed in a surface of a single crystal silicon substrate or a polycrystal silicon substrate by dipping the substrate in an etching liquid of a mixed acid including a hydrofluoride acid, a nitric acid and an adjusting agent containing at least a phosphoric acid or a water-soluble carboxylic acid having a higher molecular weight than acetic acid for adjusting the etching rate of the etching liquid. A solar cell having a substrate in which spherical projections and recesses are formed in a surface thereof to which light is incident; an apparatus for producing a solar cell, and a wet etching apparatus to maintain a constant concentration of a nitric acid, are provided.

    摘要翻译： 在制备太阳能电池时，通过将基板浸渍在包含氢氟酸，硝酸和调节的混合酸的蚀刻液中，在单晶硅基板或多晶硅基板的表面上均匀地形成微小的突起和凹陷 包含至少含有比乙酸分子量高的磷酸或水溶性羧酸的试剂以调节蚀刻液的蚀刻速率。 一种具有基板的太阳能电池，其中在入射光的表面上形成有球形的凸起和凹陷; 提供太阳能电池的制造装置以及保持硝酸浓度恒定的湿式蚀刻装置。

    Semiconductor laser with superlattice cladding layer
    10.
    发明授权
    Semiconductor laser with superlattice cladding layer 失效
    半导体激光器与超晶格包层

    公开(公告)号：US5574741A

    公开(公告)日：1996-11-12

    申请号：US2012

    申请日：1993-01-08

    申请人： Satoshi Arimoto

    发明人： Satoshi Arimoto

    IPC分类号： H01S5/00 ,  H01S5/16 ,  H01S5/20 ,  H01S5/32 ,  H01S5/34 ,  H01S3/19

    CPC分类号： H01S5/162 ,  H01S5/16 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2013 ,  H01S5/3216 ,  H01S5/3428

    摘要： A semiconductor laser device having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer successively disposed on a first conductivity type substrate includes a superlattice semiconductor multi-layered structure disposed at least either between the active layer and the first conductivity type cladding layer or between the active layer and the second conductivity type cladding layer. The superlattice semiconductor multi-layered structure may include a multiquantum barrier and this multiquantum barrier may include a buffer layer for preventing tunneling disposed at the side of the active layer and a superlattice multi-layered film structure including plural barrier layers and plural well layers alternatingly laminated. As a result, light intensity at the laser facet is reduced, suppressing facet deterioration during high-power operation.

    摘要翻译： 依次配置在第一导电型基板上的具有第一导电型包覆层，有源层和第二导电型包覆层的半导体激光器件包括超晶格半导体多层结构，其至少设置在有源层与第一导电型层之间 导电型包层或有源层与第二导电型包覆层之间。 超晶格半导体多层结构可以包括多量势垒，并且该多量势垒可以包括用于防止设置在有源层侧的隧道的缓冲层和包括多个势垒层和多个阱层的超晶格多层膜结构交替层叠 。 结果，激光刻面处的光强降低，从而抑制大功率运转时的小面变差。