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    SEMICONDUCTOR LIGHT EMITTING DEVICE
    2.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20120292631A1

    公开(公告)日：2012-11-22

    申请号：US13222302

    申请日：2011-08-31

    申请人： Hiroshi KATSUNO ,  Satoshi Mitsugi ,  Toshiyuki Oka ,  Shinya Nunoue

    发明人： Hiroshi KATSUNO ,  Satoshi Mitsugi ,  Toshiyuki Oka ,  Shinya Nunoue

    IPC分类号： H01L33/32

    CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/36 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

    摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part.

    摘要翻译： 根据一个实施例，半导体发光器件包括堆叠结构体，第一电极，第二电极和电介质体部分。 叠层结构体包括具有与第一部分并置的第一部分和第二部分的第一半导体层，设置在第二部分上的发光层，设置在发光层上的第二半导体层。 第一电极包括设置在第一部分上并接触第一层的接触部分。 第二电极包括设置在第二半导体层上并与第二层接触的第一部分，以及与第一部分电连接的第二部分，并且当从第一层朝向第二层时，包括与接触部分重叠的部分。 电介质体部分设置在接触部分和第二部分之间。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    3.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权

    公开(公告)号：US20130234182A1

    公开(公告)日：2013-09-12

    申请号：US13601520

    申请日：2012-08-31

    申请人： Hiroshi KATSUNO ,  Satoshi Mitsugi ,  Shinya Nunoue

    发明人： Hiroshi KATSUNO ,  Satoshi Mitsugi ,  Shinya Nunoue

    IPC分类号： H01L33/20 ,  H01L33/58

    CPC分类号： H01L33/405 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/58

    摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a bonding pad, a narrow wire electrode and a first insulating layer. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer and is in contact with the first semiconductor layer. The narrow wire electrode includes a first portion and a second portion. The first portion is provided on a surface of the first semiconductor layer not in contact with the light emitting layer and is in ohmic contact with the first semiconductor layer. The second portion is provided on the surface and located between the first portion and the bonding pad. The narrow wire electrode is electrically connected to the bonding pad. The first insulating layer is provided between the second portion and the first semiconductor layer.

    SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING WAFER
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING WAFER 有权
    半导体发光装置，散热器，制造半导体发光装置的方法及制造方法

    公开(公告)号：US20130069032A1

    公开(公告)日：2013-03-21

    申请号：US13406705

    申请日：2012-02-28

    申请人： Mitsuhiro KUSHIBE ,  Yasuo OHBA ,  Hiroshi KATSUNO ,  Kei KANEKO ,  Shinji YAMADA

    发明人： Mitsuhiro KUSHIBE ,  Yasuo OHBA ,  Hiroshi KATSUNO ,  Kei KANEKO ,  Shinji YAMADA

    IPC分类号： H01L33/04

    CPC分类号： H01L33/06 ,  H01L33/0079 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided between the first and second layers, a first stacked structure provided between the first layer and the light emitting unit, and a second stacked structure provided between the first layer and the first stacked structure. The light emitting unit includes barrier layers and a well layer provided between the barrier layers. The first stacked structure includes third layers including a nitride semiconductor, and fourth layers stacked with the third layers and including GaInN. The fourth layers have a thinner thickness than the well layer. The second stacked structure includes fifth layers including a nitride semiconductor, and sixth layers stacked with the fifth layers and including GaInN. The sixth layers have a thinner thickness than the well layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括第一层n型和第二层p型，包括氮化物半导体，设置在第一和第二层之间的发光单元，第一层叠结构， 第一层和发光单元，以及设置在第一层和第一堆叠结构之间的第二堆叠结构。 发光单元包括阻挡层和设置在阻挡层之间的阱层。 第一堆叠结构包括包括氮化物半导体的第三层和与第三层堆叠并包括GaInN的第四层。 第四层具有比阱层更薄的厚度。 第二堆叠结构包括包括氮化物半导体的第五层和与第五层堆叠并包括GaInN的第六层。 第六层的厚度比井层薄。

    SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光装置，半导体发光装置及制造半导体发光装置的方法

    公开(公告)号：US20120217531A1

    公开(公告)日：2012-08-30

    申请号：US13204021

    申请日：2011-08-05

    申请人： Hiroshi KATSUNO ,  Yasuo Ohba ,  Shinji Yamada ,  Mitsuhiro Kushibe ,  Kei Kaneko

    发明人： Hiroshi KATSUNO ,  Yasuo Ohba ,  Shinji Yamada ,  Mitsuhiro Kushibe ,  Kei Kaneko

    IPC分类号： H01L33/40 ,  H01L33/50

    CPC分类号： H01L33/405 ,  H01L24/32 ,  H01L33/40 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括堆叠结构体和电极。 叠层结构体具有包括氮化物系半导体的第一导电型第一半导体层，包含氮化物系半导体的第二导电型第二半导体层和设置在第一半导体层与第二半导体层之间的发光层。 电极具有第一，第二和第三金属层。 第一金属层设置在第二半导体层上并且包括银或银合金。 第二金属层设置在第一金属层上，并且包括铂，钯，铑，铱，钌，锇中的至少一种元素。 第三金属层设置在第二金属层上。 沿第一至第二半导体层的方向的第三金属层的厚度等于或大于第二金属层的厚度。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER
    8.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER 有权
    半导体发光器件和散热器

    公开(公告)号：US20100059734A1

    公开(公告)日：2010-03-11

    申请号：US12505053

    申请日：2009-07-17

    申请人： Kei KANEKO ,  Yasuo OHBA ,  Hiroshi KATSUNO ,  Mitsuhiro Kushibe

    发明人： Kei KANEKO ,  Yasuo OHBA ,  Hiroshi KATSUNO ,  Mitsuhiro Kushibe

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0025 ,  H01L33/06 ,  H01L33/325

    摘要： A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1), and a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN. The plurality of barrier layers have a nearest barrier layer and a far barrier layer. The nearest barrier layer is nearest to the second layer among the plurality of barrier layers. The nearest barrier layer includes a first portion and a second portion. The first portion is made of Si-containing AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1). The second portion is provided between the first portion and the second layer and is made of AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1). The Si concentration in the second portion is lower than a Si concentration in the first portion and lower than a Si concentration in the far barrier layer.

    摘要翻译： 半导体发光器件包括由n型GaN和n型AlGaN中的至少一种构成的第一层; 由含Mg的p型AlGaN制成的第二层; 以及设置在第一层和第二层之间的发光部。 发光部包括由含Si的Al x Ga 1-x-y In y N（0＆nl; x，0＆nl; y，x + y＆nlE; 1）构成的多个阻挡层，以及设置在每对多个阻挡层 并由GaInN或AlGaInN制成。 多个阻挡层具有最近的阻挡层和远的阻挡层。 最近的阻挡层最接近多个阻挡层中的第二层。 最近的阻挡层包括第一部分和第二部分。 第一部分由含Si的Al x Ga 1-x-y In y N（0＆nl; x，0＆nl; y，x + y＆nlE; 1）制成。 第二部分设置在第一部分和第二层之间，并由Al x Ga 1-x-y In y N（0＆lt; n 1; x，0＆n 1; y，x + y和n 1; 1）制成。 第二部分中的Si浓度低于第一部分中的Si浓度，并且低于远阻隔层中的Si浓度。

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME
    9.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME 有权
    半导体发光元件及其制造方法

    公开(公告)号：US20090230422A1

    公开(公告)日：2009-09-17

    申请号：US12401473

    申请日：2009-03-10

    申请人： Hiroshi KATSUNO ,  Yasuo Ohba ,  Kei Kaneko

    发明人： Hiroshi KATSUNO ,  Yasuo Ohba ,  Kei Kaneko

    IPC分类号： H01L33/00 ,  H01L21/02

    CPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/387 ,  H01L33/40 ,  H01L33/42 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2924/00014

    摘要： A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer.

    摘要翻译： 半导体发光元件包括：第一半导体层，第二半导体层，设置在第一半导体层和第二半导体层之间的发光层，连接到第一半导体层的第一电极和第二电极， 在第二半导体层上。 面向第二半导体层的第二电极的一侧由银和银合金中的至少一种构成。 第二电极具有在与第二半导体层相对的第二电极的平面中具有发光波长或更小的发光波长的空隙。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS
    10.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS 有权
    半导体发光器件和半导体发光器件

    公开(公告)号：US20090050916A1

    公开(公告)日：2009-02-26

    申请号：US12195718

    申请日：2008-08-21

    申请人： Hiroshi KATSUNO ,  Yasuo Ohba ,  Kei Kaneko

    发明人： Hiroshi KATSUNO ,  Yasuo Ohba ,  Kei Kaneko

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/387 ,  H01L33/44 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2224/05599 ,  H01L2924/00012

    摘要： A semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode provided on the first semiconductor layer, a second electrode including a first metal film provided on the second semiconductor layer and containing at least one of silver and a silver alloy, and a second metal film provided on the first metal film and made of a metal substantially not containing silver, and a dielectric film spaced from the first metal film on the second semiconductor layer. The second metal film covers the first metal film, at least part of the dielectric film, and a surface of the second semiconductor layer exposed between the first metal film and the dielectric film.

    摘要翻译： 半导体发光器件包括第一半导体层，第二半导体层，设置在第一半导体层和第二半导体层之间的发光层，设置在第一半导体层上的第一电极，包括第一金属膜的第二电极 设置在第二半导体层上并且包含银和银合金中的至少一种，以及设置在第一金属膜上并由基本上不含银的金属制成的第二金属膜，以及与第一金属膜间隔开的电介质膜 第二半导体层。 第二金属膜覆盖第一金属膜，介电膜的至少一部分，以及暴露在第一金属膜和电介质膜之间的第二半导体层的表面。