公开(公告)号：US06441414B1

公开(公告)日：2002-08-27

申请号：US09170590

申请日：1998-10-13

申请人： Myoungho Lim ,  Vikram Joshi ,  Jeffrey W. Bacon ,  Joseph D. Cuchiaro ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

发明人： Myoungho Lim ,  Vikram Joshi ,  Jeffrey W. Bacon ,  Joseph D. Cuchiaro ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  G11C11/22 ,  G11C11/223 ,  H01L21/28291 ,  H01L29/78391

摘要： A ferroelectric non-volatile memory in which each memory cell consists of a single electronic element, a ferroelectric FET. The FET includes a source, drain, gate and substrate. The fact that the drain to source current, lds, is always negative if a substrate to drain bias, Vss, of 0.8 volts or more is applied, permits the creation of a read and write truth table. A gate voltage equal to one truth table logic value is applied via a column decoder and a substrate bias equal to another truth table logic value is applied via a row decoder to write to the memory a resultant lds logic state, which can be read whenever a voltage is placed across the source and drain.

摘要翻译： 一种铁电非易失性存储器，其中每个存储单元由单个电子元件，铁电FET组成。 FET包括源极，漏极，栅极和衬底。 如果施加0.8伏或更高的衬底到漏极偏压Vss，则漏源到源电流lds总是为负，这允许创建读写真值表。 通过列解码器施加等于一个真值表逻辑值的栅极电压，并且经由行解码器施加等于另一个真值表逻辑值的衬底偏置，以向存储器写入结果lds逻辑状态，其可以在每当 电压跨过源极和漏极放置。

公开(公告)号：US06174213B1

公开(公告)日：2001-01-16

申请号：US09388038

申请日：1999-09-01

申请人： Carlos A. Paz de Araujo ,  Jolanta Celinska ,  Joseph D. Cuchiaro ,  Jeffrey W. Bacon ,  Larry D. McMillan ,  Akihiro Matsuda ,  Gota Kano ,  Yoshio Yamaguchi ,  Tatsuo Morita ,  Hideo Nagai

发明人： Carlos A. Paz de Araujo ,  Jolanta Celinska ,  Joseph D. Cuchiaro ,  Jeffrey W. Bacon ,  Larry D. McMillan ,  Akihiro Matsuda ,  Gota Kano ,  Yoshio Yamaguchi ,  Tatsuo Morita ,  Hideo Nagai

IPC分类号： B05D722

CPC分类号： C03C17/3417 ,  C03C17/253 ,  C03C2217/21 ,  C03C2217/211 ,  C03C2217/24 ,  C03C2217/244 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1275 ,  C23C18/1283 ,  C23C18/1291

摘要： Metal organic precursor compounds are dissolved in an organic solvent to form a nonaqueous liquid precursor. The liquid precursor is applied to the inner envelope surface of a fluorescent lamp and heated to form a metal oxide thin film layer. The metal oxide thin film layer may be a conductor, a protective layer or provide other functions. The films have a thickness of from 20 nm to 500 nm. A conductive layer comprising tin-antimony oxide with niobium dopant may be fabricated to have a differential resistivity profile by selecting a combination of precursor composition and annealing temperatures.

摘要翻译： 将金属有机前体化合物溶解在有机溶剂中以形成非水性液体前体。 将液体前体施加到荧光灯的内包络面上并加热形成金属氧化物薄膜层。 金属氧化物薄膜层可以是导体，保护层或提供其他功能。 膜的厚度为20nm至500nm。 可以通过选择前体组合物和退火温度的组合来制造包含具有铌掺杂剂的锡 - 锑氧化物的导电层以具有差分电阻率分布。

公开(公告)号：US06376691B1

公开(公告)日：2002-04-23

申请号：US09388044

申请日：1999-09-01

申请人： Jolanta Celinska ,  Carlos A. Paz de Araujo ,  Joseph D. Cuchiaro ,  Jeffrey W. Bacon ,  Larry D. McMillan

发明人： Jolanta Celinska ,  Carlos A. Paz de Araujo ,  Joseph D. Cuchiaro ,  Jeffrey W. Bacon ,  Larry D. McMillan

IPC分类号： C07F1900

CPC分类号： C07C53/126

摘要： A liquid precursor for forming a transparent metal oxide thin film comprises a first organic precursor compound. In one embodiment, the liquid precursor is for making a conductive thin film. In this embodiment, the liquid precursor contains a first metal from the group including tin, antimony, and indium dissolved in an organic solvent. The liquid precursor preferably comprises a second organic precursor compound containing a second metal from the same group. Also, the liquid precursor preferably comprises an organic dopant precursor compound containing a metal selected from the group including niobium, tantalum, bismuth, cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, zinc and magnesium. Liquid precursors containing a plurality of metals have a longer shelf life. The addition of an organic dopant precursor compound containing a metal, such as niobium, tantalum or bismuth, to the liquid precursor enhances control of the conductivity of the resulting transparent conductor. In a second embodiment, a liquid precursor for forming a transparent metal oxide nonconductive thin film comprises an organic precursor compound containing a metal from the group including cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, niobium, tantalum, and bismuth. Liquid precursors of the invention preferably comprise a metal organic precursor compound, such as an ethylhexanoate, an octanoate, or a neodecanoate, dissolved in a solvent, such as xylenes, n-octane and n-butyl acetate.

摘要翻译： 用于形成透明金属氧化物薄膜的液体前体包括第一有机前体化合物。 在一个实施例中，液体前体用于制造导电薄膜。 在该实施方案中，液体前体含有溶解在有机溶剂中的包含锡，锑和铟的第一金属。 液体前体优选包含含有来自相同基团的第二金属的第二有机前体化合物。 此外，液体前体优选包含含有选自铌，钽，铋，铈，钇，钛，锆，铪，硅，铝，锌和镁的金属的有机掺杂剂前体化合物。 含有多种金属的液体前体具有更长的保质期。 向液体前体中添加含有诸如铌，钽或铋的金属的有机掺杂剂前体化合物增强了所得到的透明导体的导电性的控制。 在第二实施方案中，用于形成透明金属氧化物非导电薄膜的液体前体包括含有包括铈，钇，钛，锆，铪，硅，铝，铌，钽和铋的金属的有机前体化合物。 本发明的液体前体优选包含溶解在溶剂例如二甲苯，正辛烷和乙酸正丁酯中的金属有机前体化合物，例如乙基己酸酯，辛酸酯或新癸酸酯。

公开(公告)号：US06686489B2

公开(公告)日：2004-02-03

申请号：US10037877

申请日：2001-11-09

申请人： Jolanta Celinska ,  Carlos A. Paz de Araujo ,  Joseph D. Cuchiaro ,  Jeffrey W. Bacon ,  Larry D. McMillan

发明人： Jolanta Celinska ,  Carlos A. Paz de Araujo ,  Joseph D. Cuchiaro ,  Jeffrey W. Bacon ,  Larry D. McMillan

IPC分类号： C07F1900

CPC分类号： C07C53/126

摘要： A liquid precursor for forming a transparent metal oxide thin film comprises a first organic precursor compound. In one embodiment, the liquid precursor is for making a conductive thin film. In this embodiment, the liquid precursor contains a first metal from the group including tin, antimony, and indium dissolved in an organic solvent. The liquid precursor preferably comprises a second organic precursor compound containing a second metal from the same group. Also, the liquid precursor preferably comprises an organic dopant precursor compound containing a metal selected from the group including niobium, tantalum, bismuth, cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, zinc and magnesium. Liquid precursors containing a plurality of metals have a longer shelf life. The addition of an organic dopant precursor compound containing a metal, such as niobium, tantalum or bismuth, to the liquid precursor enhances control of the conductivity of the resulting transparent conductor. In a second embodiment, a liquid precursor for forming a transparent metal oxide nonconductive thin film comprises an organic precursor compound containing a metal from the group including cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, niobium, tantalum, and bismuth. Liquid precursors of the invention preferably comprise a metal organic precursor compound, such as an ethylhexanoate, an octanoate, or a neodecanoate, dissolved in a solvent, such as xylenes, n-octane and n-butyl acetate.

摘要翻译： 用于形成透明金属氧化物薄膜的液体前体包括第一有机前体化合物。 在一个实施例中，液体前体用于制造导电薄膜。 在该实施方案中，液体前体含有溶解在有机溶剂中的包含锡，锑和铟的第一金属。 液体前体优选包含含有来自相同基团的第二金属的第二有机前体化合物。 此外，液体前体优选包含含有选自铌，钽，铋，铈，钇，钛，锆，铪，硅，铝，锌和镁的金属的有机掺杂剂前体化合物。 含有多种金属的液体前体具有更长的保质期。 向液体前体中添加含有诸如铌，钽或铋的金属的有机掺杂剂前体化合物增强了所得到的透明导体的导电性的控制。 在第二实施方案中，用于形成透明金属氧化物非导电薄膜的液体前体包括含有包括铈，钇，钛，锆，铪，硅，铝，铌，钽和铋的金属的有机前体化合物。 本发明的液体前体优选包含溶解在溶剂例如二甲苯，正辛烷和乙酸正丁酯中的金属有机前体化合物，例如乙基己酸酯，辛酸酯或新癸酸酯。

公开(公告)号：US06511718B1

公开(公告)日：2003-01-28

申请号：US09446226

申请日：1999-12-17

申请人： Carlos A. Paz de Araujo ,  Larry D. McMillan ,  Narayan Solayappan ,  Jeffrey W. Bacon

发明人： Carlos A. Paz de Araujo ,  Larry D. McMillan ,  Narayan Solayappan ,  Jeffrey W. Bacon

IPC分类号： H05H124

CPC分类号： C23C16/45565 ,  B05D1/007 ,  B05D1/04 ,  C23C16/40 ,  C23C16/448 ,  C23C16/45561 ,  C23C18/12 ,  H01L21/31691 ,  H01L28/55

摘要： A venturi mist generator creates a mist comprising droplets having a mean diameter less than one micron from liquid precursors containing multi-metal polyalkoxide compounds. The mist is mixed and then passed into a gasifier where the mist droplets are gasified at a temperature of between 100° C. and 250° C., which is lower than the temperature at which the precursor compounds decompose. The gasified precursor compounds are transported by carrier gas through insulated tubing at ambient temperature to prevent both condensation and premature decomposition. The gasified precursors are mixed with oxidant gas, and the gaseous reactant mixture is injected through a showerhead inlet into a deposition reactor in which a substrate is heated at a temperature of from 300° C. to 600 ° C. The gasified precursors decompose at the substrate and form a thin film of solid material on the substrate. The thin film is treated at elevated temperatures of from 500° C. to 900° C. to form polycrystalline metal oxide material, in particular, ferroelectric layered superlattice material.

摘要翻译： 文丘里雾发生器产生包含具有小于1微米的平均直径的液滴的雾，所述液体前体含有多金属聚烷氧化物。 将雾混合，然后进入气化器，在气化器中雾滴在100℃和250℃之间的温度下气化，该温度低于前体化合物分解的温度。 气化的前体化​​合物通过载气在环境温度下通过绝缘管输送，以防止冷凝和过早分解。 将气化的前体与氧化剂气体混合，并将气态反应物混合物通过喷头入口注入沉积反应器中，在沉积反应器中将基底在300℃至600℃的温度下加热。气化的前体在 衬底并在衬底上形成固体材料的薄膜。 该薄膜在500℃至900℃的高温下进行处理以形成多晶金属氧化物材料，特别是铁电层状超晶格材料。

公开(公告)号：US5788757A

公开(公告)日：1998-08-04

申请号：US770991

申请日：1996-12-23

申请人： Hiroto Uchida ,  Nobuyuki Soyama ,  Kensuke Kageyama ,  Katsumi Ogi ,  Jeffrey W. Bacon ,  Michael C. Scott ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

发明人： Hiroto Uchida ,  Nobuyuki Soyama ,  Kensuke Kageyama ,  Katsumi Ogi ,  Jeffrey W. Bacon ,  Michael C. Scott ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

IPC分类号： C01B13/32 ,  C01G33/00 ,  C01G35/00 ,  C23C18/12 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  C07F19/00 ,  C07F3/00 ,  C07F9/00 ,  C07F9/94

CPC分类号： C23C18/1216 ,  C23C18/1279

摘要： A metal organic liquid precursor solution includes metal organic complexes dispersed in an ester solvent. The ester solvent has medium length carbon chains to prevent the precipitation of strongly electropositive metals in solution. A liquid precursor solution is used to make thin film metal oxides of uniform thickness and consistent quality.

摘要翻译： 金属有机液体前体溶液包括分散在酯溶剂中的金属有机配合物。 酯溶剂具有中等长度的碳链以防止溶液中强正电性金属的沉淀。 使用液体前体溶液制备厚度均匀且品质一致的薄膜金属氧化物。

公开(公告)号：US6110531A

公开(公告)日：2000-08-29

申请号：US892485

申请日：1997-07-14

申请人： Carlos A. Paz de Araujo ,  Larry D. McMillan ,  Narayan Solayappan ,  Jeffrey W. Bacon

发明人： Carlos A. Paz de Araujo ,  Larry D. McMillan ,  Narayan Solayappan ,  Jeffrey W. Bacon

IPC分类号： B05D1/00 ,  B05D1/04 ,  B05D3/04 ,  B05D7/24 ,  C23C4/12 ,  C23C16/02 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/46 ,  C23C16/48 ,  C23C16/52 ,  C23C16/56 ,  C23C18/12 ,  C23C18/14 ,  C23C26/02 ,  C30B7/00 ,  C30B25/02 ,  H01C7/10 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L27/108 ,  H01L27/115 ,  H01L41/24 ,  H05K3/10 ,  C23C16/18 ,  H01L21/31

CPC分类号： C23C16/45565 ,  B05D1/00 ,  B05D1/007 ,  B05D1/04 ,  B05D1/60 ,  B05D3/0493 ,  C23C16/0218 ,  C23C16/40 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/4486 ,  C23C16/45561 ,  C23C16/4558 ,  C23C16/46 ,  C23C16/482 ,  C23C16/52 ,  C23C16/56 ,  C23C26/02 ,  C23C4/123 ,  C30B25/02 ,  C30B29/68 ,  C30B7/00 ,  C30B7/005 ,  H01C7/1013 ,  H01L21/02197 ,  H01L21/02274 ,  H01L21/02356 ,  H01L27/10805 ,  H01L27/11502 ,  H01L28/56 ,  H01L28/60 ,  H01L41/1871 ,  H01L41/316 ,  H01L28/55 ,  H05K3/105

摘要： A mist is generated by a venturi from liquid precursors containing compounds used in chemical vapor deposition, transported in carrier gas through tubing at ambient temperature, passed into a heated zone where the mist droplets are gasified at a temperature of between 100.degree. C. and 200.degree. C., which is lower than the decomposition temperature of the precursor compounds. The gasified liquid is injected through an inlet assembly into a deposition reactor in which there is a substrate heated to from 400.degree. C. to 600.degree. C., on which the gasified compounds decompose and form a thin film of layered superlattice compound.

摘要翻译： 由文氏管产生的气雾包含化学气相沉积中使用的化合物的液体前体，在载气中通过管道在环境温度下运输，并通入加热区，雾化气滴在100℃至200℃的温度下气化 ℃，其低于前体化合物的分解温度。 将气化液体通过入口组件注入到沉积反应器中，其中存在加热至400℃至600℃的基底，气化的化合物在其上分解并形成层状超晶格化合物的薄膜。

公开(公告)号：US06495709B1

公开(公告)日：2002-12-17

申请号：US09526786

申请日：2000-03-16

申请人： Jolanta Celinska ,  Jeffrey W. Bacon ,  Akihiro Matsuda ,  Carlos A. Paz de Araujo

发明人： Jolanta Celinska ,  Jeffrey W. Bacon ,  Akihiro Matsuda ,  Carlos A. Paz de Araujo

IPC分类号： C07F506

CPC分类号： C23C30/00 ,  C03C17/25 ,  C03C2217/214 ,  C03C2218/113 ,  C07C51/412 ,  C07C53/128

摘要： A precursor for forming an aluminum oxide film comprises a liquid solution of an aluminum organic precursor compound in an organic solvent. In a second embodiment, the precursor comprises a suspension of aluminum oxide powder in a solution of an aluminum organic precursor compound. A precursor according to the invention is deposited on a substrate by dipping, rolling, spraying, misted deposition, spin on deposition, or chemical vapor deposition then heated to fabricate transparent aluminum oxide films. The electronic properties of the aluminum oxide films may be improved by depositing a plurality of layers of the precursor and annealing the precursor between layers.

摘要翻译： 用于形成氧化铝膜的前体包括铝有机前体化合物在有机溶剂中的液体溶液。 在第二个实施方案中，前体包含氧化铝粉末在铝有机前体化合物的溶液中的悬浮液。 根据本发明的前体通过浸渍，轧制，喷涂，雾化沉积，沉积或化学气相沉积沉积在基底上，然后加热以制造透明氧化铝膜。 可以通过沉积多层前体并在层间退火前体来改善氧化铝膜的电子性能。