摘要:
An integrated circuit includes a layered superlattice material having the formula A1w1+a1A2w2+a2 . . . Ajwj+ajS1x1+s1S2x2+s2 . . . Skxk+skB1y1+b1B2y2+b2 . . . Blyl+blQz−q, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . B1 represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in ferroelectric FETs in non-volatile memories. Others are high dielectric constant materials that do not degrade or break down over long periods of use and are applied as the gate insulator in volatile memories.
摘要:
Thin film ferroelectric materials for use in integrated memory circuits, such as FERAMS and the like, contain strontium bismuth niobium tantalate having an empirical formula SrBi.sub.2+E (Nb.sub.X Ta.sub.2-X)O.sub.9+3E/2, wherein E is a number representing an excess amount of bismuth ranging from zero to 2; and X is a number representing an excess amount of niobium ranging from 0.01 to 0.9. The thin films demonstrate an exceptional resistance to polarization imprinting when challenged with unidirectional voltage pulses.
摘要翻译:用于诸如FERAMS等的集成记忆电路中的薄膜铁电材料包含具有经验式SrBi2 + E(NbXTa2-X)O9 + 3E / 2的钽酸钽铋铌酸盐,其中E是表示过量的数 的铋范围从零到2; X表示0.01〜0.9的过量的铌。 当用单向电压脉冲进行挑战时,薄膜表现出极好的耐极化压印特性。
摘要:
Thin film ferroelectric materials for use in integrated memory circuits, such as FERAMS and the like, contain strontium bismuth niobium tantalate having an empirical formula SrBi.sub.2+E (Nb.sub.X Ta.sub.2-X)O.sub.9+3E/2, wherein E is a number representing an excess amount of bismuth ranging from zero to 2; and X is a number representing an excess amount of niobium ranging from 0.01 to 0.9. The thin films demonstrate an exceptional resistance to polarization imprinting when challenged with unidirectional voltage pulses.
摘要:
A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦x≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−Y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNb1−y)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is
摘要翻译:一种高介电常数绝缘体,包括选自钨青铜型氧化物,烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜 。 一个实施方案包含由一般化学计量式AB2O6,A2B2O7和A2B2B2O10表示的金属氧化物,其中A表示选自由Ba,Bi,Sr,Pb,Ca,K,Na和La组成的金属组中的A位原子; B表示选自由Ti,Zr,Ta,Hf,Mo,W和Nb组成的金属组中的B位原子。 优选地,金属氧化物是(BaxSr1-x)(TayNb1-y)2O6,其中0 <= x <= 1.0且0 <= y <= 1.0; (BaxSr1-x)2(TayNb1-Y)2O7,其中0 <= x <= 1.0且0 <= y <= 1.0; 和(BaxSr1-x)2Bi2(TayNb1-y)2O10,其中0 <= x <= 1.0且0 <= y <= 1.0。 根据本发明的薄膜的相对介电常数> 40,优选约100。本发明的金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm,优选<100。
摘要:
A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦y≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNb1−y)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is
摘要翻译:一种高介电常数绝缘体,包括选自钨青铜型氧化物,烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜 。 一个实施方案包含由一般化学计量式AB2O6,A2B2O7和A2B2B2O10表示的金属氧化物,其中A表示选自由Ba,Bi,Sr,Pb,Ca,K,Na和La组成的金属组中的A位原子; B表示选自由Ti,Zr,Ta,Hf,Mo,W和Nb组成的金属组中的B位原子。 优选地,金属氧化物是(BaxSr1-x)(TayNb1-y)2O6,其中0 <= y <= 1.0且0 <= Y&LE; 1.0; (BAxSr1-x)2(TayNb1-y)2O7,其中0 <= x <= 1.0且0 <= y <= 1.0; AND(BAxSr1-x)2Bi2(TayNb1-y)2O10,其中0 <= x <= 1.0且0 <= y <= 1.0。 根据本发明的薄膜的相对介电常数> 40,优选约100。本发明的金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm,优选<100。
摘要:
A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦x≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNby−1)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is
摘要翻译:一种高介电常数绝缘体,包括选自钨青铜型氧化物,烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜 。 一个实施方案包含由一般化学计量式AB2O6,A2B2O7和A2B2B2O10表示的金属氧化物,其中A表示选自由Ba,Bi,Sr,Pb,Ca,K,Na和La组成的金属组中的A位原子; B表示选自由Ti,Zr,Ta,Hf,Mo,W和Nb组成的金属组中的B位原子。 优选地,金属氧化物是(BaxSr1-x)(TayNb1-y)2O6,其中0 <= x <= 1.0且0 <= y <= 1.0; (BaxSr1-x)2(TayNb1-y)2O7,其中0 <= x <= 1.0且0 <= y <= 1.0; 和(BaxSr1-x)2Bi2(TayNby-1)2O10,其中0 <= x <= 1.0且0 <= y <= 1.0。 根据本发明的薄膜的相对介电常数> 40,优选约100.本发明金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm,优选<100。
摘要:
A ferroelectric non-volatile memory in which each memory cell consists of a single electronic element, a ferroelectric FET. The FET includes a source, drain, gate and substrate. A cell is selected for writing or reading by application of bias voltages to the source, drain, gate or substrate. A gate voltage equal to one truth table logic value and a drain voltage equal to another truth table logic value are applied via a row decoder, and a substrate bias equal to a third truth table logic value is applied via a column decoder to write to the memory a resultant Ids logic state, which can be non-destructively read by placing a voltage across the source and drain.
摘要:
A ferroelectric non-volatile memory in which each memory cell consists of a single electronic element, a ferroelectric FET. The FET includes a source, drain, gate and substrate. The fact that the drain to source current, lds, is always negative if a substrate to drain bias, Vss, of 0.8 volts or more is applied, permits the creation of a read and write truth table. A gate voltage equal to one truth table logic value is applied via a column decoder and a substrate bias equal to another truth table logic value is applied via a row decoder to write to the memory a resultant lds logic state, which can be read whenever a voltage is placed across the source and drain.
摘要:
An integrated circuit memory, MMIC, or other device including a dielectric comprising lead-tin zirconium-titanium oxide (PSZT). The proportion of tin ranges from 30% to 50% of the total amount of tin, zirconium and titanium. The dielectric is formed by applying a first liquid precursor having 10% excess lead to a substrate and heating it to form a first PSZT thin film, applying a second liquid precursor having 5% excess lead to the first thin film and heating to form a second thin film, then applying the first liquid precursor and heating to form a third thin film, and annealing the three thin films together to form a PSZT dielectric layer.
摘要:
An integrated curcuit includes a layered superlattice material having the .sub.formula A1w1.sup.+a1 A2.sub.w2.sup.+a2 . . . Aj.sub.wj.sup.+aj S1.sub.x1.sup.+s1 S2.sub.x2.sup.+s2 . . . Sk.sub.xk.sup.+sk B1.sub.y1.sup.+b1 B2.sub.y2.sup.+b2 . . . Bl.sub.yl.sup.+bl Q.sub.z.sup.-2, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . Bl represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in non-volatile memories. Others are high dielectric constant materials that do not degrade or breakdown over long periods of use and are applied in volatile memories.