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    Method for processing oxide semiconductor film and method for manufacturing semiconductor device
    3.
    发明授权
    Method for processing oxide semiconductor film and method for manufacturing semiconductor device 有权
    氧化物半导体膜的制造方法及半导体装置的制造方法

    公开(公告)号：US08716073B2

    公开(公告)日：2014-05-06

    申请号：US13547451

    申请日：2012-07-12

    申请人： Shunpei Yamazaki ,  Shinji Ohno ,  Yuichi Sato ,  Junichi Koezuka ,  Sachiaki Tezuka

    发明人： Shunpei Yamazaki ,  Shinji Ohno ,  Yuichi Sato ,  Junichi Koezuka ,  Sachiaki Tezuka

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225

    摘要： To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.

    摘要翻译： 提供一种可以应用于晶体管的包含低电阻区域的氧化物半导体膜。 提供可以高速执行的包括氧化物半导体膜的晶体管。 提供一种高性能半导体器件，其包括能够以高产率高速执行的包括氧化物半导体膜的晶体管。 在氧化物半导体膜上形成具有还原性的膜。 接下来，氧原子的一部分从氧化物半导体膜转移到具有还原性的膜。 接下来，通过具有还原性的膜向氧化物半导体膜添加杂质，然后去除具有还原性的膜，从而在氧化物半导体膜中形成低电阻区域。

    Manufacturing method of semiconductor device
    4.
    发明授权
    Manufacturing method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US08969182B2

    公开(公告)日：2015-03-03

    申请号：US13453118

    申请日：2012-04-23

    申请人： Junichi Koezuka ,  Naoto Yamade ,  Yuhei Sato ,  Yutaka Okazaki ,  Shunpei Yamazaki

    发明人： Junichi Koezuka ,  Naoto Yamade ,  Yuhei Sato ,  Yutaka Okazaki ,  Shunpei Yamazaki

    IPC分类号： H01L21/36 ,  H01L21/00 ,  H01L29/04 ,  H01L29/786 ,  H01L29/66

    CPC分类号： H01L27/1274 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

    摘要： A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

    摘要翻译： 使用氧化物半导体的半导体器件具有稳定的电特性以提高可靠性。 在包括氧化物半导体膜的晶体管的制造工艺中，形成含有基本上垂直于其顶表面的c轴的晶体（也称为第一晶体氧化物半导体膜）的氧化物半导体膜; 氧化物被添加到氧化物半导体膜中以使至少部分氧化物半导体膜非晶化，从而形成含有过量氧的非晶氧化物半导体膜; 在非晶氧化物半导体膜上形成氧化铝膜; 在其上进行热处理以使非晶氧化物半导体膜的至少一部分结晶，使得含有具有基本上垂直于其顶表面的c轴的晶体的氧化物半导体膜（也称为第二结晶氧化物半导体膜 ） 形成了。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08643008B2

    公开(公告)日：2014-02-04

    申请号：US13547119

    申请日：2012-07-12

    申请人： Shunpei Yamazaki ,  Naoto Yamade ,  Junichi Koezuka

    发明人： Shunpei Yamazaki ,  Naoto Yamade ,  Junichi Koezuka

    IPC分类号： H01L29/10 ,  H01L29/18 ,  H01L27/148

    CPC分类号： H01L27/1225

    摘要： A semiconductor device which can operate at high speed and consumes a smaller amount of power is provided. In a semiconductor device including transistors each including an oxide semiconductor, the oxygen concentration of the oxide semiconductor film of the transistor having small current at negative gate voltage is different from that of the oxide semiconductor film of the transistor having high field-effect mobility and large on-state current. Typically, the oxygen concentration of the oxide semiconductor film of the transistor having high field-effect mobility and large on-state current is lower than that of the oxide semiconductor film of the transistor having small current at negative gate voltage.

    摘要翻译： 提供了可以高速运行并消耗更少功率的半导体器件。 在包括各自包含氧化物半导体的晶体管的半导体器件中，在负栅极电压下具有小电流的晶体管的氧化物半导体膜的氧浓度与具有高场效应迁移率的晶体管的氧化物半导体膜的氧浓度不同 通态电流。 通常，具有高场电迁移率和大导通状态电流的晶体管的氧化物半导体膜的氧浓度低于在负栅极电压下具有小电流的晶体管的氧化物半导体膜的氧浓度。

    Doping device
    7.
    发明申请
    Doping device 审中-公开
    兴奋剂

    公开(公告)号：US20070063147A1

    公开(公告)日：2007-03-22

    申请号：US11148287

    申请日：2005-06-09

    申请人： Shunpei Yamazaki ,  Junichi Koezuka ,  Hiroto Shinoda ,  Osamu Nakamura ,  Atsuo Isobe ,  Tetsuji Yamaguchi ,  Hiromichi Godo

    发明人： Shunpei Yamazaki ,  Junichi Koezuka ,  Hiroto Shinoda ,  Osamu Nakamura ,  Atsuo Isobe ,  Tetsuji Yamaguchi ,  Hiromichi Godo

    IPC分类号： H01J27/00 ,  H01J7/24 ,  H05B31/26

    CPC分类号： H01L27/127 ,  H01J37/3171 ,  H01L21/2652 ,  H01L21/26586 ,  H01L21/67213 ,  H01L27/1214 ,  H01L29/78621 ,  H01L29/78624 ,  H01L2029/7863

    摘要： According to the present invention, a manufacturing device of a semiconductor device provided with a device for uniformly doping with an impurity element a large area substrate capable of multiple patterns for the purpose of mass-production is provided. The present invention has a feature that a cross section of an ion current is to be a linear shape or a rectangle, and the large area substrate is moved in a direction perpendicular to a longitudinal direction of the ion current while keeping the large area substrate inclined at a predetermined tilt angle θ to the ion current. In this invention, an incident angle of an ion beam is adjusted as changing the tile angle θ. By making the large area substrate inclined to a horizontal plane, the width of the longitudinal direction of the ion current can be shortened than the length of a side of the substrate.

    摘要翻译： 根据本发明，提供了一种半导体器件的制造装置，其具有用于均匀掺杂杂质元素的装置，该装置能够进行批量生产的能够具有多种图案的大面积基板。 本发明的特征在于，离子电流的截面为直线形状或矩形，大面积基板沿垂直于离子电流的长度方向的方向移动，同时保持大面积基板倾斜 以离子电流的预定倾斜角θ。 在本发明中，随着瓦片角度θ的改变，离子束的入射角被调整。 通过使大面积基板倾斜于水平面，离子电流的长度方向的宽度可以比基板的一侧的长度缩短。

    Thin film transistor
    8.
    发明授权
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号：US08637866B2

    公开(公告)日：2014-01-28

    申请号：US12490447

    申请日：2009-06-24

    申请人： Toshiyuki Isa ,  Yasuhiro Jinbo ,  Sachiaki Tezuka ,  Koji Dairiki ,  Hidekazu Miyairi ,  Shunpei Yamazaki ,  Takuya Hirohashi

    发明人： Toshiyuki Isa ,  Yasuhiro Jinbo ,  Sachiaki Tezuka ,  Koji Dairiki ,  Hidekazu Miyairi ,  Shunpei Yamazaki ,  Takuya Hirohashi

    IPC分类号： H01L29/72

    CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

    摘要： A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.

    摘要翻译： 至少在源区和漏区侧，薄膜晶体管包括作为缓冲层的半导体层，该半导体层含有氮并且包括在栅极绝缘层和源极和漏极区之间的非晶结构中的晶体区域。 与在沟道形成区域中包含非晶半导体的薄膜晶体管相比，可以提高薄膜晶体管的导通电流。 此外，与在沟道形成区域中包含微晶半导体的薄膜晶体管相比，可以减小薄膜晶体管的截止电流。