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    SURFACE TREATMENT PROCESS PERFORMED ON A TRANSPARENT CONDUCTIVE OXIDE LAYER FOR SOLAR CELL APPLICATIONS
    1.
    发明申请
    SURFACE TREATMENT PROCESS PERFORMED ON A TRANSPARENT CONDUCTIVE OXIDE LAYER FOR SOLAR CELL APPLICATIONS 审中-公开
    用于太阳能电池应用的透明导电氧化层的表面处理工艺

    公开(公告)号：US20120107996A1

    公开(公告)日：2012-05-03

    申请号：US12916526

    申请日：2010-10-30

    申请人： Shuran Sheng ,  Lin Zhang ,  Zheng Yuan ,  Yong Kee Chae

    发明人： Shuran Sheng ,  Lin Zhang ,  Zheng Yuan ,  Yong Kee Chae

    IPC分类号： H01L31/18

    CPC分类号： H01L31/076 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/548

    摘要： Embodiments of the invention provide methods of a surface treatment process performing on a transparent conductive oxide layer used in solar cell devices. In one embodiment, a method of performing a surface treatment process includes providing a substrate having a transparent conductive oxide layer disposed thereon in a processing chamber, supplying a gas mixture including an oxygen containing gas into the processing chamber, and performing a surface treatment process using the gas mixture on the surface of the transparent conductive oxide layer.

    摘要翻译： 本发明的实施方案提供了在用于太阳能电池器件的透明导电氧化物层上进行表面处理工艺的方法。 在一个实施例中，执行表面处理工艺的方法包括提供在处理室中设置有透明导电氧化物层的衬底，将包含含氧气体的气体混合物供应到处理室中，并且使用 在透明导电氧化物层的表面上的气体混合物。

    METHODS OF MANUFACTURING BACK SURFACE FIELD AND METALLIZED CONTACTS ON A SOLAR CELL DEVICE
    2.
    发明申请
    METHODS OF MANUFACTURING BACK SURFACE FIELD AND METALLIZED CONTACTS ON A SOLAR CELL DEVICE 审中-公开
    在太阳能电池装置上制造背面和金属化接触的方法

    公开(公告)号：US20130199606A1

    公开(公告)日：2013-08-08

    申请号：US13366817

    申请日：2012-02-06

    申请人： Shuran Sheng ,  Lin Zhang ,  David Tanner ,  Xuesong Lu

    发明人： Shuran Sheng ,  Lin Zhang ,  David Tanner ,  Xuesong Lu

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Embodiments of the present invention are directed to a process for making solar cells. In one embodiment, a method of manufacturing a solar cell device, includes providing a substrate having a first surface and a second surface, selectively disposing a first metal paste in a first pattern on the first surface of the substrate, forming a first dielectric layer over the first metal paste on the first surface of the substrate, forming a second metal paste in a second pattern over the first dielectric layer align with the first metal paste, and simultaneously heating the first and the second metal pastes disposed on the first surface of the substrate to form a first group of contacts on the first surface of the substrate, wherein at least a portion of the second metal paste forms the first group of contacts that each extend through the first dielectric layer to connect with the first metal paste to the first surface of the substrate.

    摘要翻译： 本发明的实施例涉及制造太阳能电池的方法。 在一个实施例中，制造太阳能电池器件的方法包括提供具有第一表面和第二表面的衬底，在衬底的第一表面上选择性地将第一金属膏以第一图案布置，形成第一介电层， 在第一介电层上形成第二图案的第二金属膏与第一金属膏对准，同时加热设置在第一金属膏的第一表面上的第一和第二金属浆料， 衬底，以在衬底的第一表面上形成第一组触点，其中第二金属膏的至少一部分形成第一组触点，每组触点延伸穿过第一电介质层，以将第一金属膏连接到第一组 基板的表面。

    BUFFER LAYER FOR IMPROVING THE PERFORMANCE AND STABILITY OF SURFACE PASSIVATION OF SILICON SOLAR CELLS
    3.
    发明申请
    BUFFER LAYER FOR IMPROVING THE PERFORMANCE AND STABILITY OF SURFACE PASSIVATION OF SILICON SOLAR CELLS 审中-公开
    用于改善硅太阳能电池表面钝化性能和稳定性的缓冲层

    公开(公告)号：US20130186464A1

    公开(公告)日：2013-07-25

    申请号：US13733825

    申请日：2013-01-03

    申请人： Shuran Sheng ,  Lin Zhang

    发明人： Shuran Sheng ,  Lin Zhang

    IPC分类号： H01L31/0216 ,  H01L31/18

    CPC分类号： H01L31/02167 ,  H01L31/02168 ,  H01L31/068 ,  H01L31/18 ,  Y02E10/547

    摘要： Embodiments of the present invention generally relate to the fabrication of solar cells and more specifically to a buffer layer for improving the performance and stability of surface passivation of Si solar cells. Generally, a passivation layer stack containing a buffer layer (interlayer) is formed on a surface of the silicon-based substrate. In one embodiment, the passivation layer stack may be formed on the back surface of the substrate. In another embodiment, the passivation layer stack is formed on the back surface of the substrate and a front emitter region (light receiving surface) of the substrate.

    摘要翻译： 本发明的实施方案一般涉及太阳能电池的制造，更具体地涉及用于提高Si太阳能电池的表面钝化的性能和稳定性的缓冲层。 通常，在硅基基板的表面上形成包含缓冲层（中间层）的钝化层堆叠。 在一个实施例中，钝化层堆叠可以形成在衬底的背面上。 在另一个实施例中，钝化层堆叠形成在衬底的背面和衬底的前发射极区（光接收表面）上。

    METHOD AND APPARATUS FOR DEPOSITING A SILICON LAYER ON A TRANSMITTING CONDUCTIVE OXIDE LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS
    6.
    发明申请
    METHOD AND APPARATUS FOR DEPOSITING A SILICON LAYER ON A TRANSMITTING CONDUCTIVE OXIDE LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS 审中-公开
    用于在太阳能电池应用中使用的发射导电氧化物层上的硅层沉积的方法和装置

    公开(公告)号：US20080289686A1

    公开(公告)日：2008-11-27

    申请号：US11752794

    申请日：2007-05-23

    申请人： TAE KYUNG WON ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

    发明人： TAE KYUNG WON ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

    IPC分类号： H01L31/04 ,  C23C16/00

    CPC分类号： H01L31/1884 ,  H01L31/022466 ,  H01L31/04 ,  Y02E10/50

    摘要： Methods and apparatus for reducing defects on transmitting conducting oxide (TCO) layer are provided. In one embodiment, a method for depositing a silicon layer on a transmitting conducting oxide (TCO) layer may include providing a substrate having a TCO layer disposed thereon, wherein the TCO layer has a peripheral region and a cell integrated region, the cell integrated region having laser scribing patterns disposed thereon, positioning the substrate on a substrate support assembly disposed in a processing chamber, wherein the substrate support assembly has a roughened surface in contact with the substrate, contacting a shadow frame to the peripheral region of the TCO layer and to the substrate support assembly thereby creating an electrical ground path between the TCO layer and substrate support through the shadow frame, and depositing a silicon containing layer on the TCO layer through an aperture of the shadow frame.

    摘要翻译： 提供了减少传导导电氧化物（TCO）层缺陷的方法和装置。 在一个实施例中，用于在透射导电氧化物（TCO）层上沉积硅层的方法可以包括提供其上设置有TCO层的衬底，其中TCO层具有外围区域和电池集成区域，电池集成区域 其具有设置在其上的激光划线图案，将所述基板定位在设置在处理室中的基板支撑组件上，其中所述基板支撑组件具有与所述基板接触的粗糙表面，将阴影框架接触所述TCO层的周边区域， 衬底支撑组件，从而通过阴影框架在TCO层和衬底支撑件之间形成电接地路径，并且通过阴影框架的孔口在TCO层上沉积含硅层。

    APPARATUS AND METHODS FOR REDUCING LIGHT INDUCED DAMAGE IN THIN FILM SOLAR CELLS
    8.
    发明申请
    APPARATUS AND METHODS FOR REDUCING LIGHT INDUCED DAMAGE IN THIN FILM SOLAR CELLS 审中-公开
    用于减少薄膜太阳能电池中的光诱导损伤的装置和方法

    公开(公告)号：US20110263074A1

    公开(公告)日：2011-10-27

    申请号：US12765458

    申请日：2010-04-22

    申请人： Amir Al-Bayati ,  Yong K. Chae ,  Shuran Sheng ,  Bhaskar Kumar ,  Eran Valfer

    发明人： Amir Al-Bayati ,  Yong K. Chae ,  Shuran Sheng ,  Bhaskar Kumar ,  Eran Valfer

    IPC分类号： H01L31/18

    CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/03767 ,  Y02E10/50 ,  Y02P70/521

    摘要： Apparatus and methods for forming a silicon-containing i-layer on a substrate for a thin film photovoltaic cell are disclosed. The apparatus includes a chamber body defining a processing region containing the substrate, a hydrogen source and a silane source coupled to a plasma generation region, an RF power source that applies power at a power level in the plasma generation region to generate a plasma and deposit the silicon-containing i-layer at a selected deposition rate to a selected thickness and a controller. The controller controls the power level and the deposition rate of the i-layer on the substrate such that the thin film solar cell exhibits light induced damage that conforms to a linear fit of the product of the RF power, the deposition rate and the selected thickness of the i-layer. In accordance with further aspects of the present invention, the controller controls the RF power and the deposition rate so that a product (x) of the RF power in watts, the deposition rate of the i-layer in nm per min and the thickness of the i-layer in nm is less than a predetermined number y and satisfies the equation y=5E11*x+3.3749 plus or minus a margin.

    摘要翻译： 公开了一种在用于薄膜光伏电池的衬底上形成含硅i层的设备和方法。 该装置包括限定包含衬底的处理区域，氢源和耦合到等离子体产生区域的硅烷源的室主体，在等离子体产生区域中以功率电平施加功率以产生等离子体和沉积物的RF电源 将所选择的沉积速率的含硅i层以选定的厚度和控制器进行。 控制器控制i层在基板上的功率水平和沉积速率，使得薄膜太阳能电池呈现符合RF功率，沉积速率和所选厚度的产品的线性拟合的光诱导损伤 的i层。 根据本发明的另外的方面，控制器控制RF功率和沉积速率，使得RF功率的乘积（x）以瓦为单位，i层的沉积速率（nm / min）和 i层的nm小于预定数量y，并且满足等式y = 5E11 * x + 3.3749加或减边缘。

    METHODS OF FORMING A THIN-FILM SOLAR ENERGY DEVICE
    9.
    发明申请
    METHODS OF FORMING A THIN-FILM SOLAR ENERGY DEVICE 审中-公开
    形成薄膜太阳能装置的方法

    公开(公告)号：US20110232753A1

    公开(公告)日：2011-09-29

    申请号：US12729777

    申请日：2010-03-23

    申请人： Shuran Sheng ,  Yong Kee Chae

    发明人： Shuran Sheng ,  Yong Kee Chae

    IPC分类号： H01L31/0368 ,  H01L31/18

    CPC分类号： H01L31/1804 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1812 ,  H01L31/1824 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： A method and apparatus for making solar cell active layers is provided. A doped microcrystalline semiconductor layer is formed with a bandgap-enhancing alloy material at low hydrogen flow rates. Deposition conditions are established at a low flowrate of the semiconductor source and ramped to a high flowrate as a first sublayer is deposited. The bandgap-enhancing alloy material is added to the reaction mixture to deposit a second sublayer. The bandgap-enhancing alloy material may optionally be stopped to deposit a third sublayer.

    摘要翻译： 提供了制造太阳能电池活性层的方法和装置。 掺杂微晶半导体层在低氢流速下由带隙增强合金材料形成。 在半导体源的低流量下建立沉积条件，并且随着沉积第一子层而倾斜到高流量。 将带隙增强合金材料加入到反应混合物中以沉积第二子层。 带隙增强合金材料可以可选地停止以沉积第三子层。