公开(公告)号：US20170047266A1

公开(公告)日：2017-02-16

申请号：US15215800

申请日：2016-07-21

Applicant: Socionext Inc.

Inventor： Takumi Ihara ,  Nobutaka Shimizu ,  Masamitsu Ikumo

IPC: H01L23/367 ,  H01L23/498 ,  H01L23/31 ,  H01L21/56 ,  H01L23/552 ,  H01L23/00 ,  H01L21/48

CPC classification number: H01L23/3675 ,  H01L21/4882 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/552 ,  H01L24/03 ,  H01L24/09 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/14051 ,  H01L2224/16227 ,  H01L2224/291 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/29387 ,  H01L2224/32058 ,  H01L2224/32105 ,  H01L2224/32106 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/83201 ,  H01L2224/83862 ,  H01L2224/83874 ,  H01L2224/92 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/27 ,  H01L2924/00012

Abstract: A semiconductor device includes a substrate and a semiconductor element mounted on the top surface of the substrate. On the top surface of the substrate, one or more pads are disposed outside the mounted semiconductor element when seen in a plan view. Then, a protrusion is disposed on each of the pads. A heat sink is disposed above the semiconductor element and the protrusions, and then bonded to the substrate by an adhesive provided between the heat sink and the substrate. The adhesive is provided in such a manner as to be in contact with the protrusions on the substrate.

Abstract translation: 半导体器件包括衬底和安装在衬底顶表面上的半导体元件。 在基板的顶表面上，当在平面图中看时，一个或多个焊盘设置在安装的半导体元件的外部。 然后，在每个焊盘上设置突起。 散热器设置在半导体元件和突起上方，然后通过设置在散热器和基板之间的粘合剂结合到基板。 粘合剂以与基板上的突起接触的方式设置。

公开(公告)号：US20160035637A1

公开(公告)日：2016-02-04

申请号：US14813592

申请日：2015-07-30

Applicant: Socionext Inc.

Inventor： Kazuyuki URAGO ,  Nobutaka Shimizu

IPC: H01L23/053 ,  H01L23/498 ,  H01L21/52 ,  H01L23/04

CPC classification number: H01L23/053 ,  H01L21/52 ,  H01L23/04 ,  H01L23/10 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/552 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83191 ,  H01L2224/92125 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/16153 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2924/1631 ,  H01L2924/16315 ,  H01L2924/1659 ,  H01L2924/16724 ,  H01L2924/16747 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2924/014 ,  H01L2924/00

Abstract: A semiconductor device includes: a substrate; a semiconductor element disposed on the substrate; a plurality of electrodes disposed on the substrate separately from one another and arranged so as to surround the semiconductor element in a plan view; a lid that cover the semiconductor element, the lid including an inner portion and a periphery portion that is outer than the inner portion in a plan view, the lid including a plurality of first protruding members that is provided separately from one another, the first protruding members being disposed in the inner portion; and conductive members disposed between the plurality of electrodes and the plurality of protruding members disposed in positions opposed to the plurality of electrodes respectively, the conductive members being joined to the plurality of electrodes and the plurality of protruding members respectively.

Abstract translation: 半导体器件包括：衬底; 设置在所述基板上的半导体元件; 多个电极，彼此分离设置在基板上，并且以平面图包围半导体元件; 覆盖所述半导体元件的盖，所述盖包括内部部分和在所述内部部分的外侧部分在平面图中的周边部分，所述盖子包括彼此分开设置的多个第一突出部件，所述第一突出部 构件设置在内部; 以及设置在所述多个电极之间的导电构件和分别设置在与所述多个电极相对的位置的所述多个突出构件，所述导电构件分别与所述多个电极和所述多个突出构件接合。

公开(公告)号：US09721866B2

公开(公告)日：2017-08-01

申请号：US14944698

申请日：2015-11-18

Applicant: SOCIONEXT INC.

Inventor： Takeshi Imamura ,  Nobutaka Shimizu ,  Yasunori Fujimoto

IPC: H01L23/00 ,  H01L23/367 ,  H01L23/373 ,  H01L23/42 ,  H01L25/18 ,  H01L21/56 ,  H01L25/16

CPC classification number: H01L23/3675 ,  H01L21/563 ,  H01L23/04 ,  H01L23/367 ,  H01L23/3736 ,  H01L23/42 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05575 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/16225 ,  H01L2224/27334 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/29166 ,  H01L2224/29191 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81075 ,  H01L2224/81815 ,  H01L2224/83075 ,  H01L2224/83191 ,  H01L2224/83447 ,  H01L2224/83487 ,  H01L2224/83815 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2924/01322 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/16251 ,  H01L2924/1659 ,  H01L2924/16747 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device is provided, the method including: mounting a first element on a wiring substrate, placing a first heat sink on the first element with a metal material interposed between the first heat sink and the first element, attaching the first heat sink to the first element via the metal material by heating and melting the metal material, and mounting a second element on the wiring substrate after the steps of attaching the first heat sink to the first element.

公开(公告)号：US20160071782A1

公开(公告)日：2016-03-10

申请号：US14944698

申请日：2015-11-18

Applicant: SOCIONEXT INC.

Inventor： Takeshi Imamura ,  Nobutaka Shimizu ,  Yasunori Fujimoto

IPC: H01L23/367 ,  H01L23/42 ,  H01L23/373 ,  H01L23/00 ,  H01L25/18

CPC classification number: H01L23/3675 ,  H01L21/563 ,  H01L23/04 ,  H01L23/367 ,  H01L23/3736 ,  H01L23/42 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05575 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/16225 ,  H01L2224/27334 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/29166 ,  H01L2224/29191 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81075 ,  H01L2224/81815 ,  H01L2224/83075 ,  H01L2224/83191 ,  H01L2224/83447 ,  H01L2224/83487 ,  H01L2224/83815 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2924/01322 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/16251 ,  H01L2924/1659 ,  H01L2924/16747 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device is provided, the method including: mounting a first element on a wiring substrate, placing a first heat sink on the first element with a metal material interposed between the first heat sink and the first element, attaching the first heat sink to the first element via the metal material by heating and melting the metal material, and mounting a second element on the wiring substrate after the steps of attaching the first heat sink to the first element.

Abstract translation: 提供一种制造半导体器件的方法，所述方法包括：将第一元件安装在布线基板上，将第一散热器放置在第一元件上，金属材料插入在第一散热器和第一元件之间， 通过加热和熔化金属材料，通过金属材料散热到第一元件，并且在将第一散热器附接到第一元件的步骤之后，将第二元件安装在布线基板上。

公开(公告)号：US10008432B2

公开(公告)日：2018-06-26

申请号：US15215800

申请日：2016-07-21

Applicant: Socionext Inc.

Inventor： Takumi Ihara ,  Nobutaka Shimizu ,  Masamitsu Ikumo

IPC: H01L23/34 ,  H01L23/367 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L23/552 ,  H01L23/31

CPC classification number: H01L23/3675 ,  H01L21/4882 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/42 ,  H01L23/4334 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/552 ,  H01L24/03 ,  H01L24/09 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/14051 ,  H01L2224/16227 ,  H01L2224/291 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/29387 ,  H01L2224/32058 ,  H01L2224/32105 ,  H01L2224/32106 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/83201 ,  H01L2224/83862 ,  H01L2224/83874 ,  H01L2224/92 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/27 ,  H01L2924/00012

Abstract: A semiconductor device includes a substrate and a semiconductor element mounted on the top surface of the substrate. On the top surface of the substrate, one or more pads are disposed outside the mounted semiconductor element when seen in a plan view. Then, a protrusion is disposed on each of the pads. A heat sink is disposed above the semiconductor element and the protrusions, and then bonded to the substrate by an adhesive provided between the heat sink and the substrate. The adhesive is provided in such a manner as to be in contact with the protrusions on the substrate.

公开(公告)号：US09716049B2

公开(公告)日：2017-07-25

申请号：US14813592

申请日：2015-07-30

Applicant: Socionext Inc.

Inventor： Kazuyuki Urago ,  Nobutaka Shimizu

IPC: H01L23/053 ,  H01L23/498 ,  H01L21/52 ,  H01L23/04 ,  H01L23/10 ,  H01L23/552 ,  H01L23/00

CPC classification number: H01L23/053 ,  H01L21/52 ,  H01L23/04 ,  H01L23/10 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/552 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83191 ,  H01L2224/92125 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/16153 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2924/1631 ,  H01L2924/16315 ,  H01L2924/1659 ,  H01L2924/16724 ,  H01L2924/16747 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2924/014 ,  H01L2924/00

Abstract: A semiconductor device includes: a substrate; a semiconductor element disposed on the substrate; a plurality of electrodes disposed on the substrate separately from one another and arranged so as to surround the semiconductor element in a plan view; a lid that cover the semiconductor element, the lid including an inner portion and a periphery portion that is outer than the inner portion in a plan view, the lid including a plurality of first protruding members that is provided separately from one another, the first protruding members being disposed in the inner portion; and conductive members disposed between the plurality of electrodes and the plurality of protruding members disposed in positions opposed to the plurality of electrodes respectively, the conductive members being joined to the plurality of electrodes and the plurality of protruding members respectively.