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公开(公告)号：US11609423B2
公开(公告)日：2023-03-21
申请号：US16627883
申请日：2019-03-19
发明人： Yohei Enya , Shinya Ito , Takashi Kyono
摘要： A mirror driving mechanism includes a plate-shaped base portion, a mirror that is installed at the base portion, and a temperature detecting section that is installed at the base portion and that detects a temperature of the base portion. The base portion includes a thin portion that is disposed away from an outer edge of the base portion and that has a through hole extending through the base portion in a plate-thickness direction of the base portion, a thick portion that is connected to the thin portion, that is thicker than the thin portion in the plate-thickness direction of the base portion, and that extends along the outer edge so as to surround the thin portion, and a first shaft portion extends into the through hole from an outer periphery of the through hole.
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公开(公告)号：US09608148B2
公开(公告)日：2017-03-28
申请号：US14615217
申请日：2015-02-05
发明人： Takashi Kyono , Kei Fujii , Katsushi Akita
IPC分类号： H01L31/0352 , H01L21/02 , H01L21/66 , H01L31/18 , G01N23/20 , H01L31/0304 , H01L27/146
CPC分类号： H01L31/035236 , G01N23/20 , G01N2223/611 , G01N2223/615 , H01L21/02398 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L22/12 , H01L27/14694 , H01L31/03046 , H01L31/184 , Y02E10/544
摘要： A method for producing a semiconductor element includes a step of forming a multiple quantum well in which a GaSb layer and an InAs layer are alternately stacked on a GaSb substrate by MOVPE, wherein, in the step of forming a multiple quantum well, an InSb film is formed on at least one of a lower-surface side and an upper-surface side of the InAs layer so as to be in contact with the InAs layer.
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公开(公告)号：US09231375B2
公开(公告)日：2016-01-05
申请号：US13765375
申请日：2013-02-12
发明人： Kunihiko Tasai , Hiroshi Nakajima , Noriyuki Futagawa , Katsunori Yanashima , Yohei Enya , Tetsuya Kumano , Takashi Kyono
CPC分类号： H01S5/3013 , B82Y20/00 , H01S5/0014 , H01S5/0035 , H01S5/2031 , H01S5/3202 , H01S5/3211 , H01S5/3213 , H01S5/34333
摘要： A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of Inx1Aly1Ga1-x1-y1N, where x1>0 and y1>0, the second cladding layer being made of Inx2Aly2Ga1-x2-y2N, where0≦x2≦about 0.02 and about 0.03≦y2≦about 0.07.
摘要翻译： 半导体器件包括：由六方晶III族氮化物半导体制成并具有半极性平面的半导体衬底; 以及形成在半导体衬底的半极性平面上的外延层，包括第一导电类型的第一包层，第二导电类型的第二包层和形成在第一包层和第二包层之间的发光层 第二包层由In x Al 1 Ga 1-x1-y 1 N制成，其中x1> 0和y1> 0，第二包层由Inx2Aly2Ga1-x2-y2N制成，其中0＆nlE; x2＆nlE;约0.02和约0.03＆ ; y2＆nlE;约0.07。
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4.发明申请GROUP III NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE 有权III族氮化物半导体器件，以及制造III族氮化物半导体器件的方法公开(公告)号：US20150115312A1
公开(公告)日：2015-04-30
申请号：US14521124
申请日：2014-10-22
发明人： Nobuhiro Saga , Shinji Tokuyama , Kazuhide Sumiyoshi , Takashi Kyono , Koji Katayama , Tatsushi Hamaguchi , Katsunori Yanashima
CPC分类号： H01L33/0095 , H01L33/0075 , H01L33/16 , H01L33/32 , H01L33/325
摘要： In a group III nitride semiconductor device according to one aspect of the present invention, in a p-type group III nitride semiconductor region formed on a semi-polar plane substrate, the concentration of hydrogen (H) contained in the p-type group III nitride semiconductor region is 25% or less of the concentration of a p-type dopant therein, and the concentration of oxygen contained in the p-type group III nitride semiconductor region is 5×1017 atoms/cm3 or lower, and an angle between a normal axis of a primary surface of the semi-polar plane substrate and a c-axis of the semi-polar plane substrate is not lower than 45 degrees and not higher than 80 degrees or not lower than 100 degrees and not higher than 135 degrees in a waveguide axis direction of the group III nitride semiconductor device.
摘要翻译： 在根据本发明的一个方面的III族氮化物半导体器件中，在形成在半极性平面衬底上的p型III族氮化物半导体区域中，p型III族中所含的氢（H）浓度 氮化物半导体区域的p型掺杂剂的浓度为25％以下，p型III族氮化物半导体区域中所含的氧浓度为5×10 17原子/ cm 3以下， 半极性平面基板的主表面的法线轴和半极性平面基板的c轴不小于45度且不高于80度或不低于100度并且不高于135度 III族氮化物半导体器件的波导轴方向。
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公开(公告)号：US10199795B2
公开(公告)日：2019-02-05
申请号：US15716085
申请日：2017-09-26
发明人： Takashi Kyono , Hideyuki Ijiri , Takao Nakamura , Hiromi Nakanishi , Takatoshi Ikegami , Kuniaki Ishihara , Yohei Enya , Tetsuya Kumano
摘要： An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.
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6.发明授权公开(公告)号：US10158035B2
公开(公告)日：2018-12-18
申请号：US15566672
申请日：2016-04-08
IPC分类号： H01L31/18 , H01L31/0352 , H01L27/146 , H01L31/0304 , H01L31/109 , H01L31/0216
摘要： A semiconductor stack includes a first-conductivity-type layer of a first conductivity type, the first-conductivity-type layer being formed of a III-V compound semiconductor; a quantum well light-receiving layer formed of a III-V compound semiconductor; and a second-conductivity-type layer of a second conductivity type different from the first conductivity type, the second-conductivity-type layer being formed of a III-V compound semiconductor. The first-conductivity-type layer, the quantum well light-receiving layer, and the second-conductivity-type layer are stacked in this order. The quantum well light-receiving layer has a thickness of 0.5 μm or more. The quantum well light-receiving layer has a carrier concentration of 1×1016 cm−3 or less.
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公开(公告)号：US20180010763A1
公开(公告)日：2018-01-11
申请号：US15644293
申请日：2017-07-07
发明人： Takashi Kyono , Hiromi Nakanishi , Hideyuki Ijiri , Kaoru Shibata
CPC分类号： F21V3/02 , F21V15/01 , F21V17/101 , F21Y2115/30 , H01S5/02216 , H01S5/02248 , H01S5/02296 , H01S5/4012 , H01S5/4093
摘要： An optical module includes a transmitting member. The transmitting member is fixed to a cap member so as to cover a through-hole. On the assumption that the height of one point on a first surface in a state in which the transmitting member is detached from the cap member is zero and the direction toward the outside of the optical module is a positive direction, the amount of warp that is a difference between the displacement at the central point and the displacement at a standard point, on the first surface, corresponding to a reference point, on the projection image, away from a center of gravity by a particular distance is different between a first geodesic line and a second geodesic line, the displacement being a height of the one point in a direction of the optical axis in a state in which the transmitting member is fixed to the cap member. The transmitting member is joined to the cap member at the first surface or the second surface.
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8.发明申请SEMICONDUCTOR LAYERED STRUCTURE, METHOD FOR PRODUCING SEMICONDUCTOR LAYERED STRUCTURE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE 有权半导体层结构，半导体层结构的制造方法及半导体器件的制造方法公开(公告)号：US20160351742A1
公开(公告)日：2016-12-01
申请号：US15114001
申请日：2015-01-19
发明人： Katsushi Akita , Kei Fujii , Takashi Kyono , Koji Nishizuka , Kaoru Shibata
IPC分类号： H01L31/109 , H01L31/0224 , H01L31/0304 , H01L31/18 , H01L31/0352 , H01L31/0392
CPC分类号： H01L31/109 , C30B29/40 , H01L21/02387 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/06 , H01L31/022408 , H01L31/03046 , H01L31/035236 , H01L31/0392 , H01L31/105 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A semiconductor layered structure includes a substrate formed of a III-V compound semiconductor, a buffer layer disposed on and in contact with the substrate and formed of a III-V compound semiconductor, and a quantum well layer disposed on and in contact with the buffer layer and including a plurality of component layers formed of III-V compound semiconductors. The substrate has a diameter of 55 mm or more. At least one of the component layers is formed of a mixed crystal of three or more elements. When the compound semiconductor forming the substrate has a lattice constant d1, the compound semiconductor forming the buffer layer has a lattice constant d2, and the compound semiconductors forming the quantum well layer have an average lattice constant d3, (d2−d1)/d1 is −3×10−3 or more and 3×10−3 or less, and (d3−d1)/d1 is −3×10−3 or more and 3×10−3 or less.
摘要翻译： 半导体层状结构包括由III-V族化合物半导体形成的衬底，与衬底配置并与衬底接触并由III-V族化合物半导体形成的缓冲层，以及设置在缓冲层上并与缓冲层接触的量子阱层 并且包括由III-V族化合物半导体形成的多个成分层。 基板的直径为55mm以上。 组分层中的至少一个由三个或更多个元素的混合晶体形成。 当构成基板的化合物半导体具有晶格常数d1时，构成缓冲层的化合物半导体的晶格常数为d2，形成量子阱层的化合物半导体的平均晶格常数为d3，（d2-d1）/ d1为 -3×10-3以上3×10-3以下，（d3-d1）/ d1为-3×10-3以上且3×10-3以下。
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公开(公告)号：US09281427B2
公开(公告)日：2016-03-08
申请号：US14745681
申请日：2015-06-22
发明人： Takashi Kyono , Suguru Arikata , Katsushi Akita
IPC分类号： H01L31/00 , H01L31/0352 , H01L31/0304 , H01L31/109
CPC分类号： H01L31/035236 , H01L31/02161 , H01L31/03046 , H01L31/101 , Y02E10/544
摘要： An infrared photodiode that is a semiconductor device includes a substrate, a buffer layer formed of GaSb, and an absorption layer including a multiple quantum well structure. The multiple quantum well structure includes a stack of unit structures each including a plurality of component layers. Each unit structure includes a first component layer formed of InAs1-aSba where the ratio a is 0 or more and 0.05 or less, a second component layer formed of GaSb, and a third component layer formed of InSbxAs1-x where the ratio x is more than 0 and less than 1. The third component layer is disposed so as to be in contact with one main surface of the second component layer. The other main surface of the second component layer is in contact with the first component layer within the unit structure. The third component layer has a thickness of 0.1 nm or more and 0.9 nm or less.
摘要翻译： 作为半导体器件的红外光电二极管包括衬底，由GaSb形成的缓冲层和包括多量子阱结构的吸收层。 多量子阱结构包括每个包括多个部件层的单元结构的堆叠。 每个单位结构包括由InAs1-aSba形成的第一组分层，其中a为0以上且0.05以下，由GaSb形成的第2成分层和由In x Sb x As 1-x形成的第3成分层， 大于0且小于1.第三组分层设置成与第二组分层的一个主表面接触。 第二组分层的另一个主表面与单元结构内的第一组分层接触。 第三成分层的厚度为0.1nm以上且0.9nm以下。
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公开(公告)号：US10024516B2
公开(公告)日：2018-07-17
申请号：US15644293
申请日：2017-07-07
发明人： Takashi Kyono , Hiromi Nakanishi , Hideyuki Ijiri , Kaoru Shibata
IPC分类号： F21V3/02 , F21V15/01 , F21V17/10 , F21Y115/30
摘要： An optical module includes a transmitting member. The transmitting member is fixed to a cap member so as to cover a through-hole. On the assumption that the height of one point on a first surface in a state in which the transmitting member is detached from the cap member is zero and the direction toward the outside of the optical module is a positive direction, the amount of warp that is a difference between the displacement at the central point and the displacement at a standard point, on the first surface, corresponding to a reference point, on the projection image, away from a center of gravity by a particular distance is different between a first geodesic line and a second geodesic line, the displacement being a height of the one point in a direction of the optical axis in a state in which the transmitting member is fixed to the cap member. The transmitting member is joined to the cap member at the first surface or the second surface.
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