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    Method of controlling the film properties of PECVD-deposited thin films
    3.
    发明申请
    Method of controlling the film properties of PECVD-deposited thin films 有权
    控制PECVD沉积薄膜的膜性能的方法

    公开(公告)号：US20050255257A1

    公开(公告)日：2005-11-17

    申请号：US11021416

    申请日：2004-12-22

    申请人： Soo Choi ,  John White ,  Qunhua Wang ,  Beom Park

    发明人： Soo Choi ,  John White ,  Qunhua Wang ,  Beom Park

    IPC分类号： C23C16/00 ,  C23C16/34 ,  C23C16/509 ,  H01J37/32 ,  H01L21/316

    CPC分类号： H01J37/32082 ,  C23C16/345 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/31612

    摘要： We have discovered methods of controlling a combination of PECVD deposition process parameters during deposition of thin films which provides improved control over surface standing wave effects which affect deposited film thickness uniformity and physical property uniformity. By minimizing surface standing wave effects, the uniformity of film properties across a substrate surface onto which the films have been deposited is improved. In addition, we have developed a gas diffusion plate design which assists in the control of plasma density to be symmetrical or asymmetrical over a substrate surface during film deposition, which also provides improved control over uniformity of deposited film thickness.

    摘要翻译： 我们已经发现了在沉积薄膜期间控制PECVD沉积工艺参数的组合的方法，其提供了影响沉积膜厚度均匀性和物理性质均匀性的表面驻波效应的改进控制。 通过最小化表面驻波效应，改善了膜沉积在其上的衬底表面上的膜性质的均匀性。 此外，我们开发了一种气体扩散板设计，其有助于在膜沉积期间等离子体密度在衬底表面上对称或不对称，这也提供了对沉积膜厚度的均匀性的改进的控制。

    Plasma uniformity control by gas diffuser hole design
    4.
    发明申请
    Plasma uniformity control by gas diffuser hole design 有权
    通过气体扩散器孔设计的等离子体均匀性控制

    公开(公告)号：US20050251990A1

    公开(公告)日：2005-11-17

    申请号：US10889683

    申请日：2004-07-12

    申请人： Soo Young Choi ,  John White ,  Qunhua Wang ,  Li Hou ,  Ki Kim ,  Shinichi Kurita ,  Tae Won ,  Suhail Anwar ,  Beom Park ,  Robin Tiner

    发明人： Soo Young Choi ,  John White ,  Qunhua Wang ,  Li Hou ,  Ki Kim ,  Shinichi Kurita ,  Tae Won ,  Suhail Anwar ,  Beom Park ,  Robin Tiner

    IPC分类号： H01L21/02 ,  C23C16/00 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/505 ,  C23C16/509 ,  C23F1/00 ,  H01J37/32 ,  H01L21/205

    CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

    摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

    摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

    Anodized substrate support
    5.
    发明申请
    Anodized substrate support 有权
    阳极氧化的底物支持

    公开(公告)号：US20060185795A1

    公开(公告)日：2006-08-24

    申请号：US11406136

    申请日：2006-04-18

    申请人： Soo Choi ,  Beom Park ,  Quanyuan Shang ,  Robert Greene ,  John White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

    发明人： Soo Choi ,  Beom Park ,  Quanyuan Shang ,  Robert Greene ,  John White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

    IPC分类号： H01L21/306 ,  C23C16/00 ,  H05H1/24

    CPC分类号： H01J37/32082 ,  C23C16/4581 ,  C25D11/04 ,  C25D11/16 ,  C25D11/18

    摘要： A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 80 to about 200 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 80 to about 200 micro-inches.

    摘要翻译： 提供了一种基板支撑件及其制造方法。 在本发明的一个实施例中，衬底支撑件包括具有由电绝缘涂层覆盖的衬底支撑表面的导电体。 以基板支撑表面为中心的涂层的至少一部分具有介于约80至约200微英寸之间的表面光洁度。 在另一个实施例中，衬底支撑件包括阳极化铝体，其在主体部分上具有表面光洁度，其适于将基底支撑在约80至约200微英寸之间。

    Method of controlling the film properties of a CVD-deposited silicon nitride film
    6.
    发明申请
    Method of controlling the film properties of a CVD-deposited silicon nitride film 审中-公开
    控制CVD沉积氮化硅膜的膜特性的方法

    公开(公告)号：US20060019502A1

    公开(公告)日：2006-01-26

    申请号：US10897775

    申请日：2004-07-23

    申请人： Beom Park ,  Soo Choi ,  Tae Won ,  John White

    发明人： Beom Park ,  Soo Choi ,  Tae Won ,  John White

    IPC分类号： H01L21/469 ,  C23C16/00

    CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/5096 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/3185 ,  H01L29/4908 ,  H01L29/66765

    摘要： We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4/NH3/N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The a-SiNx:H films described herein are particularly useful as TFT gate dielectrics in the production of flat panel displays. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.

    摘要翻译： 我们已经发现，向包含SiH 4 N，NH 3和N 2的前体气体组合物中加入H 2 N 2， 在通过PECVD沉积在衬底上的a-SiN x H：H膜的衬底表面上改善湿蚀刻速率和湿蚀刻速率均匀性是有效的。 湿蚀刻速率是膜密度的指示。 通常，湿蚀刻速率越低，膜越致密。 向SiH 4 N 3 / NH 3 / N 2 N前体气体组合物中加入H 2 O没有显着增加 衬底表面沉积膜厚度的变化。 本文所述的a-SiN x X：H膜在制造平板显示器时特别适用于TFT栅极电介质。 跨过衬底的膜的均匀性使得能够生产具有25,000cm 2以上的表面积的平板显示器。

    Plasma uniformity control by gas diffuser curvature
    7.
    发明申请
    Plasma uniformity control by gas diffuser curvature 有权
    气体扩散器曲率等离子体均匀性控制

    公开(公告)号：US20060228496A1

    公开(公告)日：2006-10-12

    申请号：US11173210

    申请日：2005-07-01

    申请人： Soo Choi ,  Beom Park ,  John White ,  Robin Tiner

    发明人： Soo Choi ,  Beom Park ,  John White ,  Robin Tiner

    IPC分类号： H05H1/24

    CPC分类号： H01J37/32449 ,  H01J37/3244

    摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution assembly for a plasma processing chamber comprises a diffuser plate with gas passages passing between its upstream and downstream sides and hollow cathode cavities at the downstream side of the gas passages. The downstream side of the diffuser plate has a curvature to improve the thickness uniformity and film property uniformity of thin films deposited by PECVD, particularly SiN and amorphous silicon films. The curvature is preferably described by an arc of a circle or ellipse, the apex thereof located at the center point of the diffuser plate. In one aspect, the hollow cathode cavity volume density, surface area density, or the cavity density of the diffuser increases from the center of the diffuser to the outer edge. Methods for manufacturing such a diffuser plate are also provided.

    摘要翻译： 提供了用于在处理室中分配气体的气体分配板的实施例。 在一个实施例中，用于等离子体处理室的气体分配组件包括具有在其上游侧和下游侧之间通过气体通道的扩散板，并且在气体通道的下游侧具有空心阴极腔。 扩散板的下游侧具有改善通过PECVD沉积的薄膜的厚度均匀性和膜特性均匀性的曲率，特别是SiN和非晶硅膜。 该曲率优选地由圆或椭圆的圆弧描述，其顶点位于扩散板的中心点。 在一个方面，空心阴极腔体积密度，表面积密度或扩散器的空腔密度从扩散器的中心增加到外边缘。 还提供了制造这种扩散板的方法。

    Growth of carbon nanotubes at low temperature
    9.
    发明申请
    Growth of carbon nanotubes at low temperature 审中-公开
    碳纳米管在低温下生长

    公开(公告)号：US20050233263A1

    公开(公告)日：2005-10-20

    申请号：US10827915

    申请日：2004-04-20

    申请人： Beom Park ,  Soo Choi ,  John White

    发明人： Beom Park ,  Soo Choi ,  John White

    IPC分类号： C01B31/02 ,  C30B25/00 ,  C30B29/02 ,  C30B29/60 ,  G03F7/00

    CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162 ,  C01B2202/36 ,  C30B25/005 ,  C30B29/02 ,  C30B29/605

    摘要： A method for depositing carbon nanotubes on a large substrate is provided. The carbon nanotubes are deposited on a plasma treated transition metal layer on a substrate. In one aspect, the transition metal layer is treated with a plasma of argon or a mixture of nitrogen and hydrogen. The carbon nanotubes are deposited by thermal chemical vapor deposition at a substrate temperature of between about 400° C. and about 450° C.

    摘要翻译： 提供了一种在大型基板上沉积碳纳米管的方法。 将碳纳米管沉积在基板上的等离子体处理的过渡金属层上。 一方面，用等离子体氩或氮和氢的混合物处理过渡金属层。 通过热化学气相沉积在约400℃至约450℃的衬底温度下沉积碳纳米管。

    Diffuser gravity support
    10.
    发明申请
    Diffuser gravity support 有权
    扩散器重力支撑

    公开(公告)号：US20060060138A1

    公开(公告)日：2006-03-23

    申请号：US11188922

    申请日：2005-07-25

    申请人： Ernst Keller ,  John M. White ,  Robin Tiner ,  Jiri Kucera ,  Soo Choi ,  Beom Park ,  Michael Starr

    发明人： Ernst Keller ,  John M. White ,  Robin Tiner ,  Jiri Kucera ,  Soo Choi ,  Beom Park ,  Michael Starr

    IPC分类号： C23C16/00

    CPC分类号： H01J37/3244 ,  C23C16/45565

    摘要： An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gasses through the diffuser and is designed to provide vertical suspension to a diffuser that is supported at its perimeter, or capable of supporting the diffuser without a perimeter support. In one aspect, the at least one support member is a portion of a gas delivery conduit and in another embodiment is a plurality of support members separated from the gas delivery conduit. The at least one support member is capable of translating vertical lift, or vertical compression to a center area of the diffuser. A method and apparatus for controlling gas flow from the gas delivery conduit to the gas distribution plate is also disclosed.

    摘要翻译： 公开了一种用于支撑气体分布板的大部分中心部分的装置和方法。 至少一个支撑构件能够通过配合连接件接合和分离扩散器，而不阻止气体或气体流过扩散器，并且被设计成向在其周边支撑的扩散器提供垂直悬架，或者能够支撑 扩散器没有周界支撑。 在一个方面，所述至少一个支撑构件是气体输送导管的一部分，并且在另一个实施例中是与气体输送导管分离的多个支撑构件。 至少一个支撑构件能够将垂直升降或垂直压缩平移到扩散器的中心区域。 还公开了一种用于控制从气体输送管道到气体分配板的气流的方法和装置。