公开(公告)号：US09059097B2

公开(公告)日：2015-06-16

申请号：US13570426

申请日：2012-08-09

申请人： Stephen P. Ayotte ,  David J. Hill ,  Glen E. Richard ,  Timothy M. Sullivan ,  Heather M. Truax

发明人： Stephen P. Ayotte ,  David J. Hill ,  Glen E. Richard ,  Timothy M. Sullivan ,  Heather M. Truax

IPC分类号： H01L21/00 ,  H01L21/469 ,  H01L21/302 ,  H01L23/31 ,  H01L21/312 ,  H01L21/3105 ,  H01L29/34 ,  H01L29/32 ,  H01L21/66

CPC分类号： H01L21/302 ,  H01L21/31058 ,  H01L21/312 ,  H01L22/12 ,  H01L22/20 ,  H01L23/3171 ,  H01L23/3178 ,  H01L29/32 ,  H01L29/34 ,  H01L2224/13 ,  H01L2924/10158

摘要： Aspects of the disclosure provide a method of inhibiting crack propagation in a silicon wafer. In one embodiment, a method of repairing an imperfection on a surface of a semiconductor device is disclosed. The method includes: screening for imperfections on a surface of a silicon wafer of a semiconductor device; and in response to at least one imperfection on the surface of the silicon wafer, depositing a material on the surface of the silicon wafer.

摘要翻译： 本公开的方面提供了抑制硅晶片中裂纹扩展的方法。 在一个实施例中，公开了修复半导体器件表面上的缺陷的方法。 该方法包括：筛选半导体器件的硅晶片的表面上的缺陷; 并且响应于硅晶片的表面上的至少一个缺陷，在硅晶片的表面上沉积材料。

公开(公告)号：US09105573B2

公开(公告)日：2015-08-11

申请号：US13432772

申请日：2012-03-28

申请人： Stephen P. Ayotte ,  David J. Hill ,  John T. Kinnear, Jr. ,  Glen E. Richard ,  Timothy M. Sullivan ,  Heather M. Truax

发明人： Stephen P. Ayotte ,  David J. Hill ,  John T. Kinnear, Jr. ,  Glen E. Richard ,  Timothy M. Sullivan ,  Heather M. Truax

IPC分类号： G08B21/00 ,  H01L21/66 ,  G01R31/00

CPC分类号： H01L22/24 ,  G01R31/002 ,  H01L2924/0002 ,  Y10T29/49124 ,  H01L2924/00

摘要： Methods and structures provide an electrostatic discharge (ESD) indicator including an electric field sensitive material configured to undergo a specific color change in response to an electric field. An exposure of the structure to an ESD can be visually determined via the specific color change of the ESD indicator.

摘要翻译： 方法和结构提供了静电放电（ESD）指示器，其包括响应于电场而经受特定颜色变化的电场敏感材料。 可以通过ESD指示器的特定颜色变化来可视地确定结构对ESD的曝光。

公开(公告)号：US20140042594A1

公开(公告)日：2014-02-13

申请号：US13570426

申请日：2012-08-09

申请人： Stephen P. Ayotte ,  David J. Hill ,  Glen E. Richard ,  Timothy M. Sullivan ,  Heather M. Truax

发明人： Stephen P. Ayotte ,  David J. Hill ,  Glen E. Richard ,  Timothy M. Sullivan ,  Heather M. Truax

IPC分类号： H01L21/312 ,  H01L29/34

CPC分类号： H01L21/302 ,  H01L21/31058 ,  H01L21/312 ,  H01L22/12 ,  H01L22/20 ,  H01L23/3171 ,  H01L23/3178 ,  H01L29/32 ,  H01L29/34 ,  H01L2224/13 ,  H01L2924/10158

摘要： Aspects of the disclosure provide a method of inhibiting crack propagation in a silicon wafer. In one embodiment, a method of repairing an imperfection on a surface of a semiconductor device is disclosed. The method includes: screening for imperfections on a surface of a silicon wafer of a semiconductor device; and in response to at least one imperfection on the surface of the silicon wafer, depositing a material on the surface of the silicon wafer.

摘要翻译： 本公开的方面提供了抑制硅晶片中裂纹扩展的方法。 在一个实施例中，公开了修复半导体器件表面上的缺陷的方法。 该方法包括：筛选半导体器件的硅晶片的表面上的缺陷; 并且响应于硅晶片的表面上的至少一个缺陷，在硅晶片的表面上沉积材料。

公开(公告)号：US20140042630A1

公开(公告)日：2014-02-13

申请号：US13569674

申请日：2012-08-08

申请人： Stephen P. Ayotte ,  Timothy H. Daubenspeck ,  David J. Hill ,  Glen E. Richard ,  Timothy M. Sullivan

发明人： Stephen P. Ayotte ,  Timothy H. Daubenspeck ,  David J. Hill ,  Glen E. Richard ,  Timothy M. Sullivan

IPC分类号： H01L23/488 ,  H01L21/60

CPC分类号： H01L24/13 ,  H01L24/05 ,  H01L24/11 ,  H01L24/14 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/11472 ,  H01L2224/11474 ,  H01L2224/11614 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/131 ,  H01L2224/13116 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13655 ,  H01L2224/13666 ,  H01L2224/13684 ,  H01L2224/13687 ,  H01L2224/14051 ,  H01L2224/14131 ,  H01L2224/14151 ,  H01L2224/1416 ,  H01L2224/14177 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01029 ,  H01L2924/04953 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00

摘要： Aspects of the present invention relate to a controlled collapse chip connection (C4) structures. Various embodiments include a method of forming a controlled collapse chip connection (C4) structure. The method can include: providing a precursor structure including: a substrate, a dielectric over the substrate, the dielectric including a plurality of trenches exposing a portion of the substrate, and a metal layer over the dielectric and the portion of the substrate in each of the plurality of trenches, forming a resist layer over the metal layer, forming a rigid liner over a surface of the resist layer and the metal layer, and forming solder over the rigid liner between portions of the resist layer.

摘要翻译： 本发明的方面涉及一种受控的崩溃芯片连接（C4）结构。 各种实施例包括形成受控崩溃芯片连接（C4）结构的方法。 该方法可以包括：提供前体结构，其包括：衬底，在衬底上的电介质，电介质包括暴露衬底的一部分的多个沟槽，以及覆盖在电介质上的金属层和衬底的每一个中的金属层 所述多个沟槽在所述金属层上形成抗蚀剂层，在所述抗蚀剂层和所述金属层的表面上形成刚性衬垫，以及在所述抗蚀剂层的部分之间的所述刚性衬垫上形成焊料。

公开(公告)号：US08765593B2

公开(公告)日：2014-07-01

申请号：US13569674

申请日：2012-08-08

申请人： Stephen P. Ayotte ,  Timothy H. Daubenspeck ,  David J. Hill ,  Glen E. Richard ,  Timothy M. Sullivan

发明人： Stephen P. Ayotte ,  Timothy H. Daubenspeck ,  David J. Hill ,  Glen E. Richard ,  Timothy M. Sullivan

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  H01L24/05 ,  H01L24/11 ,  H01L24/14 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/11472 ,  H01L2224/11474 ,  H01L2224/11614 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/131 ,  H01L2224/13116 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13655 ,  H01L2224/13666 ,  H01L2224/13684 ,  H01L2224/13687 ,  H01L2224/14051 ,  H01L2224/14131 ,  H01L2224/14151 ,  H01L2224/1416 ,  H01L2224/14177 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01029 ,  H01L2924/04953 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00

摘要： Aspects of the present invention relate to a controlled collapse chip connection (C4) structures. Various embodiments include a method of forming a controlled collapse chip connection (C4) structure. The method can include: providing a precursor structure including: a substrate, a dielectric over the substrate, the dielectric including a plurality of trenches exposing a portion of the substrate, and a metal layer over the dielectric and the portion of the substrate in each of the plurality of trenches, forming a resist layer over the metal layer, forming a rigid liner over a surface of the resist layer and the metal layer, and forming solder over the rigid liner between portions of the resist layer.

摘要翻译： 本发明的方面涉及一种受控的崩溃芯片连接（C4）结构。 各种实施例包括形成受控崩溃芯片连接（C4）结构的方法。 该方法可以包括：提供前体结构，其包括：衬底，在衬底上的电介质，电介质包括暴露衬底的一部分的多个沟槽，以及覆盖在电介质上的金属层和衬底的每一个中的金属层 所述多个沟槽在所述金属层上形成抗蚀剂层，在所述抗蚀剂层和所述金属层的表面上形成刚性衬垫，以及在所述抗蚀剂层的部分之间的所述刚性衬垫上形成焊料。

公开(公告)号：US07745256B2

公开(公告)日：2010-06-29

申请号：US12114867

申请日：2008-05-05

申请人： Stephen P. Ayotte ,  David J. Hill ,  Timothy M. Sullivan

发明人： Stephen P. Ayotte ,  David J. Hill ,  Timothy M. Sullivan

IPC分类号： H01L21/50

CPC分类号： H01L24/10 ,  H01L24/13 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/00

摘要： A rectangular-shaped controlled collapse chip connection (C4) is described. In one embodiment, there is a semiconductor chip package that comprises a semiconductor chip package substrate and a semiconductor chip having a plurality of rectangular-shaped C4 contacts attached thereto that connect the semiconductor chip to the semiconductor chip package substrate. The plurality of rectangular-shaped C4 contacts are arranged along a surface of the semiconductor chip in an orientation that extends radially from a center of the surface of the semiconductor chip.

摘要翻译： 描述了矩形控制的崩溃芯片连接（C4）。 在一个实施例中，存在半导体芯片封装，其包括半导体芯片封装基板和半导体芯片，半导体芯片具有连接半导体芯片与半导体芯片封装基板的多个矩形C4触点。 多个矩形C4触点沿着半导体芯片的表面以从半导体芯片的表面的中心径向延伸的方向布置。

公开(公告)号：US20090321914A1

公开(公告)日：2009-12-31

申请号：US12164447

申请日：2008-06-30

申请人： Stephen P. Ayotte ,  Jeffrey D. Gilbert ,  David J. Hill ,  Ronald L. Mendelson ,  Timothy M. Sullivan

发明人： Stephen P. Ayotte ,  Jeffrey D. Gilbert ,  David J. Hill ,  Ronald L. Mendelson ,  Timothy M. Sullivan

IPC分类号： H01L23/52 ,  H01L21/00

CPC分类号： H05K3/303 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/10175 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2924/01322 ,  H01L2924/14 ,  H05K3/3436 ,  H05K3/3452 ,  H05K2201/2018 ,  H05K2201/2036 ,  Y02P70/613

摘要： Methods for making, and structures so made for producing integrated circuit (IC) chip packages without forming micro solder balls. In one embodiment, a method may include placing a solid grid made from an organic material between the IC chip and the substrate. The grid provides a physical barrier between each of a plurality of Controlled Collapse Chip Connections, and thereby prevents the formation of micro solder balls between them, thus improving chip performance and reliability.

摘要翻译： 制造方法和如此制造的结构，用于制造集成电路（IC）芯片封装而不形成微焊球。 在一个实施例中，一种方法可以包括将由有机材料制成的固体栅格放置在IC芯片和衬底之间。 栅格在多个受控崩溃芯片连接中的每一个之间提供物理屏障，从而防止在它们之间形成微焊球，从而提高芯片性能和可靠性。

公开(公告)号：US20090260778A1

公开(公告)日：2009-10-22

申请号：US12105478

申请日：2008-04-18

申请人： Stephen P. Ayotte ,  David J. Hill ,  Kristen L. Holverson ,  Christina M. Pepi ,  Timothy M. Sullivan

发明人： Stephen P. Ayotte ,  David J. Hill ,  Kristen L. Holverson ,  Christina M. Pepi ,  Timothy M. Sullivan

IPC分类号： F28F7/00

CPC分类号： H01L23/467 ,  F28F3/02 ,  F28F13/06 ,  H01L23/367 ,  H01L2924/0002 ,  H01L2924/00

摘要： A heat sink for cooling a heat-generating device includes a base and a cooling section coupled thereto for cooling the device. The cooling section includes a plurality of flow tubes, each flow tube having an inlet, an outlet, and a bounding wall that defines a closed fluid flow path from the inlet to the outlet. Each of the flow tubes includes a central axis that is substantially parallel to a reference plane of the heat-generating device. The flow tubes may be arranged in a layered stack and include a bounding wall that has a thickness that decreases with increasing distance in the layered stack. The flow tubes may also include a cross-sectional area that decreases with increasing distance in the layered stack. Furthermore, the bounding wall of the flow tubes may have a non-planar configuration in a direction generally parallel to the central axis.

摘要翻译： 用于冷却发热装置的散热器包括底座和与其连接的冷却部件，用于冷却该装置。 冷却部分包括多个流管，每个流管具有限定从入口到出口的封闭流体流动通道的入口，出口和边界壁。 每个流管包括基本上平行于发热装置的参考平面的中心轴线。 流动管可以被布置成层叠的堆叠并且包括边界壁，其具有随分层堆叠中的距离的增加而减小的厚度。 流动管还可以包括随分层叠层中距离的增加而减小的横截面面积。 此外，流动管的边界壁可以在大致平行于中心轴线的方向上具有非平面构造。

公开(公告)号：US08230903B2

公开(公告)日：2012-07-31

申请号：US12105478

申请日：2008-04-18

申请人： Stephen P. Ayotte ,  David J. Hill ,  Kristen L. Holverson ,  Christina M. Pepi ,  Timothy M. Sullivan

发明人： Stephen P. Ayotte ,  David J. Hill ,  Kristen L. Holverson ,  Christina M. Pepi ,  Timothy M. Sullivan

IPC分类号： F28F7/02

CPC分类号： H01L23/467 ,  F28F3/02 ,  F28F13/06 ,  H01L23/367 ,  H01L2924/0002 ,  H01L2924/00

摘要： A heat sink for cooling a heat-generating device includes a base and a cooling section coupled thereto for cooling the device. The cooling section includes a plurality of flow tubes, each flow tube having an inlet, an outlet, and a bounding wall that defines a closed fluid flow path from the inlet to the outlet. Each of the flow tubes includes a central axis that is substantially parallel to a reference plane of the heat-generating device. The flow tubes may be arranged in a layered stack and include a bounding wall that has a thickness that decreases with increasing distance in the layered stack. The flow tubes may also include a cross-sectional area that decreases with increasing distance in the layered stack. Furthermore, the bounding wall of the flow tubes may have a non-planar configuration in a direction generally parallel to the central axis.

摘要翻译： 用于冷却发热装置的散热器包括底座和与其连接的冷却部件，用于冷却该装置。 冷却部分包括多个流管，每个流管具有限定从入口到出口的封闭流体流动通道的入口，出口和边界壁。 每个流管包括基本上平行于发热装置的参考平面的中心轴线。 流动管可以被布置成层叠的堆叠并且包括边界壁，其具有随分层堆叠中的距离的增加而减小的厚度。 流动管还可以包括随分层叠层中距离的增加而减小的横截面面积。 此外，流动管的边界壁可以在大致平行于中心轴线的方向上具有非平面构造。

公开(公告)号：US07915732B2

公开(公告)日：2011-03-29

申请号：US12164447

申请日：2008-06-30

申请人： Stephen P. Ayotte ,  Jeffrey D. Gilbert ,  David J. Hill ,  Ronald L. Mendelson ,  Timothy M. Sullivan

发明人： Stephen P. Ayotte ,  Jeffrey D. Gilbert ,  David J. Hill ,  Ronald L. Mendelson ,  Timothy M. Sullivan

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H05K3/303 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/10175 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2924/01322 ,  H01L2924/14 ,  H05K3/3436 ,  H05K3/3452 ,  H05K2201/2018 ,  H05K2201/2036 ,  Y02P70/613

摘要： Methods for making, and structures so made for producing integrated circuit (IC) chip packages without forming micro solder balls. In one embodiment, a method may include placing a solid grid made from an organic material between the IC chip and the substrate. The grid provides a physical barrier between each of a plurality of Controlled Collapse Chip Connections, and thereby prevents the formation of micro solder balls between them, thus improving chip performance and reliability.

摘要翻译： 制造方法和如此制造的结构，用于制造集成电路（IC）芯片封装而不形成微焊球。 在一个实施例中，一种方法可以包括将由有机材料制成的固体栅格放置在IC芯片和衬底之间。 栅格在多个受控崩溃芯片连接中的每一个之间提供物理屏障，从而防止在它们之间形成微焊球，从而提高芯片性能和可靠性。