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    Method to avoid copper contamination on the sidewall of a via or a dual damascene structure
    1.
    发明授权
    Method to avoid copper contamination on the sidewall of a via or a dual damascene structure 有权
    避免在通孔或双镶嵌结构的侧壁上铜污染的方法

    公开(公告)号：US6114243A

    公开(公告)日：2000-09-05

    申请号：US439361

    申请日：1999-11-15

    申请人： Subhash Gupta ,  Kwok Keung Paul Ho ,  Mei-Sheng Zhou ,  Simon Chool

    发明人： Subhash Gupta ,  Kwok Keung Paul Ho ,  Mei-Sheng Zhou ,  Simon Chool

    IPC分类号： H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L21/44

    CPC分类号： H01L21/76843 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76865 ,  H01L21/76877

    摘要： A new method to prevent copper contamination of the intermetal dielectric layer during via or dual damascene etching by forming a capping layer over the first copper metallization is described. A first copper metallization is formed in a dielectric layer overlying a semiconductor substrate wherein a barrier metal layer is formed underlying the first copper metallization and overlying the dielectric layer. The first copper metallization is planarized, then etched to form a recess below the surface of the dielectric layer. A conductive capping layer is deposited overlying the first copper metallization within the recess and overlying the dielectric layer. The conductive capping layer is removed except over the first copper metallization within the recess using one of several methods. An intermetal dielectric layer is deposited overlying the dielectric layer and the conductive capping layer overlying the first copper metallization. A via or dual damascene opening is etched through the intermetal dielectric layer to the conductive capping layer wherein the conductive capping layer prevents copper contamination of the intermetal dielectric layer during etching. The via or dual damascene opening is filled with a metal layer to complete electrical connections in the fabrication of an integrated circuit device.

    摘要翻译： 描述了在通过或双镶嵌蚀刻期间通过在第一铜金属化上形成覆盖层来防止金属间电介质层的铜污染的新方法。 第一铜金属化形成在覆盖半导体衬底的电介质层中，其中阻挡金属层形成在第一铜金属化层下方并且覆盖在电介质层上。 第一铜金属化被平坦化，然后被蚀刻以在介电层的表面下方形成凹陷。 导电覆盖层沉积在凹槽内的第一铜金属化层上并覆盖在介电层上。 使用几种方法之一除去在凹槽内的第一铜金属化之外除去导电覆盖层。 覆盖介电层和覆盖第一铜金属化的导电覆盖层的金属间电介质层被沉积。 通孔或双镶嵌开口通过金属间电介质层被蚀刻到导电覆盖层，其中导电覆盖层防止蚀刻期间金属间介电层的铜污染。 通孔或双镶嵌开口填充有金属层，以在集成电路器件的制造中完成电连接。

    Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damascene
    10.
    发明授权
    Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damascene 有权
    复合硅 - 金属氮化物屏障，以防铜铜镶嵌中金属氟化物的形成

    公开(公告)号：US06465888B2

    公开(公告)日：2002-10-15

    申请号：US10043604

    申请日：2002-01-14

    申请人： Simon Chooi ,  Subhash Gupta ,  Mei Sheng Zhou ,  Sang Ki Hong

    发明人： Simon Chooi ,  Subhash Gupta ,  Mei Sheng Zhou ,  Sang Ki Hong

    IPC分类号： H01L2352

    CPC分类号： H01L21/76844 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76855

    摘要： A method of forming amorphous silicon spacers followed by the forming of metal nitride over the spacers in a copper damascene structure—single, dual, or multi-structure—is disclosed in order to prevent the formation of fluorides in copper. In a first embodiment, the interconnection between the copper damascene and an underlying copper metal layer is made by forming an opening from the dual damascene structure to the underlying copper layer after the formation of the metal nitride layer over the amorphous silicon spacers formed on the inside walls of the dual damascene structure. In the second embodiment, the interconnection between the dual damascene structure and the underlying copper line is made from the dual damascene structure by etching into the underlying copper layer after the forming of the amorphous silicon spacers and before the forming of the metal nitride layer. In the third embodiment, the ternary metal silicon nitride spacer is formed by etching after having first formed the amorphous silicon layer and the nitride layer, in that order, and then etching the passivation/barrier layer at the bottom of the damascene structure into the underlying copper layer. In all three embodiments, metal nitride reacts with amorphous silicon to form a ternary metal silicon nitride having an excellent property of adhering to copper while at the same time for forming an excellent barrier to diffusion of copper.

    摘要翻译： 公开了一种形成非晶硅间隔物的方法，随后在铜镶嵌结构 - 单，双或多结构中在间隔物上形成金属氮化物，以防止铜中氟化物的形成。 在第一实施例中，通过在形成在内部的非晶硅间隔物上形成金属氮化物层之后，通过从双镶嵌结构形成开口到下面的铜层来形成铜镶嵌层和下面的铜金属层之间的互连 双镶嵌结构的墙壁。 在第二实施例中，通过在形成非晶硅间隔物之后并且在形成金属氮化物层之前通过蚀刻到下面的铜层中，由双镶嵌结构制造双镶嵌结构和下面的铜线之间的互连。 在第三实施例中，三元金属氮化硅间隔物依次先形成非晶硅层和氮化物层后，通过蚀刻形成，然后在镶嵌结构底部蚀刻钝化/阻挡层，形成底层 铜层。 在所有三个实施例中，金属氮化物与非晶硅反应形成具有优异的粘附铜特性的三元金属氮化硅，同时形成对铜的扩散的优异屏障。