公开(公告)号：US08389419B2

公开(公告)日：2013-03-05

申请号：US13311926

申请日：2011-12-06

申请人： Sunil Shanker ,  Tony P. Chiang

发明人： Sunil Shanker ,  Tony P. Chiang

IPC分类号： H01L21/31

CPC分类号： C23C16/047 ,  C23C16/04 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45591 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32366

摘要： Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.

公开(公告)号：US20110244690A1

公开(公告)日：2011-10-06

申请号：US12963995

申请日：2010-12-09

申请人： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang

发明人： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang

IPC分类号： H01L21/311 ,  H01L21/02

CPC分类号： H01L21/02274 ,  C23C16/0227 ,  C23C16/44 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/4586 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32779 ,  H01L21/3065 ,  H01L21/67069

摘要： According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.

摘要翻译： 根据本公开的各种实施例，描述了一种用于增强沉积和蚀刻技术的装置和方法，包括基座，具有至少两个嵌入基座的电极的基座，基座上方的喷头，连接到基座的等离子体气体源 淋浴头，其中所述喷头被构造成将等离子体气体输送到所述喷头和所述基板之间的处理区域，以及电源，其可操作地连接到所述喷头和所述至少两个电极，其中等离子体基本上包含在对应于 所述至少两个电极。

公开(公告)号：US08318611B2

公开(公告)日：2012-11-27

申请号：US13334491

申请日：2011-12-22

申请人： Sunil Shanker ,  Tony P. Chiang

发明人： Sunil Shanker ,  Tony P. Chiang

IPC分类号： H01L21/31

CPC分类号： C23C16/047 ,  C23C16/04 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45591 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32366

摘要： Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.

公开(公告)号：US08440259B2

公开(公告)日：2013-05-14

申请号：US12013729

申请日：2008-01-14

申请人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

发明人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

IPC分类号： C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/45544 ,  C23C16/45548

摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

公开(公告)号：US08148273B1

公开(公告)日：2012-04-03

申请号：US13337728

申请日：2011-12-27

申请人： Sunil Shanker ,  Tony P. Chiang

发明人： Sunil Shanker ,  Tony P. Chiang

IPC分类号： H01L21/31

CPC分类号： C23C16/047 ,  C23C16/04 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45591 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32366

摘要： Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.

公开(公告)号：US20090061646A1

公开(公告)日：2009-03-05

申请号：US12205578

申请日：2008-09-05

申请人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lng

发明人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lng

IPC分类号： H01L21/31 ,  H01L21/30

CPC分类号： C23C16/45574 ,  C23C16/45544 ,  C23C16/45548

摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

摘要翻译： 提供组合处理室和方法。 在该方法中，流体体积在衬底的表面上流动，具有不同部分的流体体积具有不同构成组分，以同时将衬底的偏析区域暴露于与构成组分的混合物中，所述构成组分与相邻区域暴露于其中的构成组分不同 。 通过多个流动产生不同处理的分离区域。

公开(公告)号：US20090061644A1

公开(公告)日：2009-03-05

申请号：US12013759

申请日：2008-01-14

申请人： Tony P. Chiang ,  Sunil Shanker ,  Chi I. Lang

发明人： Tony P. Chiang ,  Sunil Shanker ,  Chi I. Lang

IPC分类号： H01L21/31 ,  B05C11/00

CPC分类号： C23C16/45574 ,  C23C16/45544 ,  C23C16/45548

摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

公开(公告)号：US08726838B2

公开(公告)日：2014-05-20

申请号：US12963995

申请日：2010-12-09

申请人： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang

发明人： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang

IPC分类号： C23C16/50 ,  C23C16/509 ,  H01L21/3065 ,  C23C16/455 ,  C23C16/02 ,  C23C16/458 ,  H01L21/67 ,  H01J37/32

CPC分类号： H01L21/02274 ,  C23C16/0227 ,  C23C16/44 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/4586 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32779 ,  H01L21/3065 ,  H01L21/67069

摘要： According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.

摘要翻译： 根据本公开的各种实施例，描述了一种用于增强沉积和蚀刻技术的装置和方法，包括基座，具有至少两个嵌入基座的电极的基座，基座上方的喷头，连接到基座的等离子体气体源 淋浴头，其中所述喷头被构造成将等离子体气体输送到所述喷头和所述基板之间的处理区域，以及电源，其可操作地连接到所述喷头和所述至少两个电极，其中等离子体基本上包含在对应于 所述至少两个电极。

公开(公告)号：US08409354B2

公开(公告)日：2013-04-02

申请号：US13332813

申请日：2011-12-21

申请人： Tony P. Chiang ,  Chi-l Lang ,  Sunil Shanker

发明人： Tony P. Chiang ,  Chi-l Lang ,  Sunil Shanker

IPC分类号： C23C16/00 ,  C23C16/458

CPC分类号： C23C16/45574 ,  C23C16/45544 ,  C23C16/45548

摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

摘要翻译： 提供组合处理室和方法。 在该方法中，流体体积在衬底的表面上流动，具有不同部分的流体体积具有不同构成组分，以同时将衬底的偏析区域暴露于与构成组分的混合物中，所述构成组分与相邻区域暴露于其中的构成组分不同 。 通过多个流动产生不同处理的分离区域。

公开(公告)号：US08334015B2

公开(公告)日：2012-12-18

申请号：US12013759

申请日：2008-01-14

申请人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

发明人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

IPC分类号： C23C16/04

CPC分类号： C23C16/45574 ,  C23C16/45544 ,  C23C16/45548

摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

摘要翻译： 提供组合处理室和方法。 在该方法中，流体体积在衬底的表面上流动，具有不同部分的流体体积具有不同构成组分，以同时将衬底的偏析区域暴露于与构成组分的混合物中，所述构成组分与相邻区域暴露于其中的构成组分不同 。 通过多个流动产生不同处理的分离区域。