公开(公告)号：US20110244690A1

公开(公告)日：2011-10-06

申请号：US12963995

申请日：2010-12-09

申请人： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang

发明人： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang

IPC分类号： H01L21/311 ,  H01L21/02

CPC分类号： H01L21/02274 ,  C23C16/0227 ,  C23C16/44 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/4586 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32779 ,  H01L21/3065 ,  H01L21/67069

摘要： According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.

摘要翻译： 根据本公开的各种实施例，描述了一种用于增强沉积和蚀刻技术的装置和方法，包括基座，具有至少两个嵌入基座的电极的基座，基座上方的喷头，连接到基座的等离子体气体源 淋浴头，其中所述喷头被构造成将等离子体气体输送到所述喷头和所述基板之间的处理区域，以及电源，其可操作地连接到所述喷头和所述至少两个电极，其中等离子体基本上包含在对应于 所述至少两个电极。

公开(公告)号：US08440259B2

公开(公告)日：2013-05-14

申请号：US12013729

申请日：2008-01-14

申请人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

发明人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

IPC分类号： C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/45544 ,  C23C16/45548

摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

公开(公告)号：US08726838B2

公开(公告)日：2014-05-20

申请号：US12963995

申请日：2010-12-09

申请人： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang

发明人： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang

IPC分类号： C23C16/50 ,  C23C16/509 ,  H01L21/3065 ,  C23C16/455 ,  C23C16/02 ,  C23C16/458 ,  H01L21/67 ,  H01J37/32

CPC分类号： H01L21/02274 ,  C23C16/0227 ,  C23C16/44 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/4586 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32779 ,  H01L21/3065 ,  H01L21/67069

摘要： According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.

摘要翻译： 根据本公开的各种实施例，描述了一种用于增强沉积和蚀刻技术的装置和方法，包括基座，具有至少两个嵌入基座的电极的基座，基座上方的喷头，连接到基座的等离子体气体源 淋浴头，其中所述喷头被构造成将等离子体气体输送到所述喷头和所述基板之间的处理区域，以及电源，其可操作地连接到所述喷头和所述至少两个电极，其中等离子体基本上包含在对应于 所述至少两个电极。

公开(公告)号：US08334015B2

公开(公告)日：2012-12-18

申请号：US12013759

申请日：2008-01-14

申请人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

发明人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

IPC分类号： C23C16/04

CPC分类号： C23C16/45574 ,  C23C16/45544 ,  C23C16/45548

摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

摘要翻译： 提供组合处理室和方法。 在该方法中，流体体积在衬底的表面上流动，具有不同部分的流体体积具有不同构成组分，以同时将衬底的偏析区域暴露于与构成组分的混合物中，所述构成组分与相邻区域暴露于其中的构成组分不同 。 通过多个流动产生不同处理的分离区域。

公开(公告)号：US20120090545A1

公开(公告)日：2012-04-19

申请号：US13332813

申请日：2011-12-21

申请人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

发明人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

IPC分类号： C23C16/455

CPC分类号： C23C16/45574 ,  C23C16/45544 ,  C23C16/45548

摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

摘要翻译： 提供组合处理室和方法。 在该方法中，流体体积在衬底的表面上流动，具有不同部分的流体体积具有不同构成组分，以同时将衬底的偏析区域暴露于与构成组分的混合物中，所述构成组分与相邻区域暴露于其中的构成组分不同 。 通过多个流动产生不同处理的分离区域。

公开(公告)号：US20090061083A1

公开(公告)日：2009-03-05

申请号：US12013729

申请日：2008-01-14

申请人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

发明人： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

IPC分类号： C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/45544 ,  C23C16/45548

摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

公开(公告)号：US20090061644A1

公开(公告)日：2009-03-05

申请号：US12013759

申请日：2008-01-14

申请人： Tony P. Chiang ,  Sunil Shanker ,  Chi I. Lang

发明人： Tony P. Chiang ,  Sunil Shanker ,  Chi I. Lang

IPC分类号： H01L21/31 ,  B05C11/00

CPC分类号： C23C16/45574 ,  C23C16/45544 ,  C23C16/45548

摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

公开(公告)号：US08389419B2

公开(公告)日：2013-03-05

申请号：US13311926

申请日：2011-12-06

申请人： Sunil Shanker ,  Tony P. Chiang

发明人： Sunil Shanker ,  Tony P. Chiang

IPC分类号： H01L21/31

CPC分类号： C23C16/047 ,  C23C16/04 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45591 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32366

摘要： Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.

公开(公告)号：US08298837B2

公开(公告)日：2012-10-30

申请号：US13072083

申请日：2011-03-25

申请人： Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

发明人： Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

IPC分类号： H01L21/00

CPC分类号： H01L51/0031 ,  H01L51/56

摘要： A system and method of increasing productivity of OLED material screening includes providing a substrate that includes an organic semiconductor, processing regions on the substrate by combinatorially varying parameters associated with the OLED device production on the substrate, performing a first characterization test on the processed regions on the substrate to generate first results, processing regions on the substrate in a combinatorial manner by varying parameters associated with the OLED device production on the substrate based on the first results of the first characterization test, performing a second characterization test on the processed regions on the substrate to generate second results, and determining whether the substrate meets a predetermined quality threshold based on the second results.

摘要翻译： 提高OLED材料筛选的生产率的系统和方法包括提供包括有机半导体的衬底，通过组合地改变与衬底上的OLED器件生产相关的参数来在衬底上处理区域，对处理的区域进行第一表征测试 所述衬底产生第一结果，基于所述第一表征测试的第一结果，通过改变与所述衬底上的OLED器件生产相关联的参数，以组合方式处理所述衬底上的区域，对所述衬底上的所述处理区域进行第二特性测试 衬底以产生第二结果，以及基于第二结果确定衬底是否满足预定质量阈值。

公开(公告)号：US20120119768A1

公开(公告)日：2012-05-17

申请号：US12948257

申请日：2010-11-17

申请人： Yun Wang ,  Tony P. Chiang ,  Ryan Clarke ,  Chi-I Lang ,  Yoram Schwarz

发明人： Yun Wang ,  Tony P. Chiang ,  Ryan Clarke ,  Chi-I Lang ,  Yoram Schwarz

IPC分类号： G01R31/3187 ,  H01L21/66

CPC分类号： H01L22/14

摘要： A method and system of improved reliability testing includes providing a first substrate and a second substrate, each substrate comprising only a first metallization layer; processing regions on a first substrate by combinatorially varying at least one of materials, unit processes, and process sequences; performing a first reliability test on the processed regions on the first substrate to generate first results; processing regions on a second substrate in a combinatorial manner by varying at least one of materials, unit processes, and process sequences based on the first results of the first reliability test; performing a second reliability test on the processed regions on the second substrate to generate second results; and determining whether the first substrate and the second substrate meet a predetermined quality threshold based on the second results.

摘要翻译： 改进的可靠性测试的方法和系统包括提供第一衬底和第二衬底，每个衬底仅包括第一金属化层; 通过组合地改变材料，单元过程和工艺顺序中的至少一个来处理第一衬底上的处理区域; 对所述第一基板上的所述经处理区域进行第一可靠性测试以产生第一结果; 基于第一可靠性测试的第一结果，通过改变材料，单元过程和过程序列中的至少一个来以组合的方式处理第二基板上的区域; 对所述第二基板上的所述经处理区域进行第二可靠性测试以产生第二结果; 以及基于所述第二结果来确定所述第一基板和所述第二基板是否满足预定质量阈值。