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    Thin films
    3.
    发明授权
    Thin films 有权
    薄膜

    公开(公告)号：US07419903B2

    公开(公告)日：2008-09-02

    申请号：US11106220

    申请日：2005-04-13

    申请人： Suvi P. Haukka ,  Ivo Raaijmakers ,  Wei Min Li ,  Juhana Kostamo ,  Hessel Sprey

    发明人： Suvi P. Haukka ,  Ivo Raaijmakers ,  Wei Min Li ,  Juhana Kostamo ,  Hessel Sprey

    IPC分类号： H01L21/4763

    CPC分类号： C23C16/029 ,  C23C16/34 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45534 ,  C30B25/14 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31641 ,  H01L21/3185 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76879 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L2221/1089

    摘要： Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses can gradually increase in frequency, forming a transition region, until pure copper is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces. In some embodiments additional seed layers or additional transition layers are provided.

    摘要翻译： 通过原子层沉积形成薄膜，由此膜的组成可以在包括自限制化学的交替脉冲的循环期间从单层变为单层。 在所示实施例中，在循环过程中引入了不同量的杂质源。 因此，即使对于非常薄的层也提供了渐变栅极电介质。 薄的2nm的栅极电介质可以从纯氧化硅到氧氮化物变化为氮化硅。 类似地，栅极电介质可以从氧化铝到氧化铝和较高介电材料（例如ZrO 2）的混合物变化为纯高k材料并返回到氧化铝。 在另一个实施例中，金属氮化物（例如，WN）首先形成为用于衬里双镶嵌沟槽和通孔的屏障。 在交替沉积工艺期间，铜可以被引入，例如分开的脉冲，并且铜源脉冲可以逐渐增加频率，形成过渡区域，直到在上表面形成纯铜。 有利的是，这些和各种其他情况下的分级组合物有助于避免诸如在尖锐材料界面处可能发生的蚀刻速率控制，电迁移和非欧姆电接触等问题。 在一些实施例中，提供了额外的种子层或附加的过渡层。

    THIN FILMS
    4.
    发明申请
    THIN FILMS 审中-公开
    薄膜

    公开(公告)号：US20110256718A1

    公开(公告)日：2011-10-20

    申请号：US13079562

    申请日：2011-04-04

    申请人： Suvi P. Haukka ,  Ivo Raaijmakers ,  Wei Min Li ,  Juhana Kostamo ,  Hessel Sprey ,  Christiaan J. Werkhoven

    发明人： Suvi P. Haukka ,  Ivo Raaijmakers ,  Wei Min Li ,  Juhana Kostamo ,  Hessel Sprey ,  Christiaan J. Werkhoven

    IPC分类号： H01L21/285

    CPC分类号： C23C16/029 ,  C23C16/34 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45534 ,  C30B25/14 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31641 ,  H01L21/3185 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76879 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L2221/1089

    摘要： Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses can gradually increase in frequency, forming a transition region, until pure copper is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces. In some embodiments additional seed layers or additional transition layers are provided.

    摘要翻译： 通过原子层沉积形成薄膜，由此膜的组成可以在包括自限制化学的交替脉冲的循环期间从单层变为单层。 在所示实施例中，在循环过程中引入了不同量的杂质源。 因此，即使对于非常薄的层也提供了梯度栅极电介质。 薄的2nm的栅极电介质可以从纯氧化硅到氧氮化物变化为氮化硅。 类似地，栅极电介质可以从氧化铝变化为氧化铝和较高电介质材料（例如，ZrO 2）到纯高k材料并返回到氧化铝的混合物。 在另一个实施例中，金属氮化物（例如，WN）首先形成为用于衬里双镶嵌沟槽和通孔的屏障。 在交替沉积工艺期间，铜可以被引入，例如分开的脉冲，并且铜源脉冲可以逐渐增加频率，形成过渡区域，直到在上表面形成纯铜。 有利的是，这些和各种其他情况下的分级组合物有助于避免诸如在尖锐材料界面处可能发生的蚀刻速率控制，电迁移和非欧姆电接触等问题。 在一些实施例中，提供了额外的种子层或附加的过渡层。

    Method and resulting capacitor structure for liquid crystal on silicon display devices
    5.
    发明授权
    Method and resulting capacitor structure for liquid crystal on silicon display devices 有权
    用于液晶显示器件的方法和电容器结构

    公开(公告)号：US07936406B2

    公开(公告)日：2011-05-03

    申请号：US12259160

    申请日：2008-10-27

    申请人： Herb Huang ,  Wei Min Li ,  Haiting Li ,  Ziru Ren ,  Yinan Han

    发明人： Herb Huang ,  Wei Min Li ,  Haiting Li ,  Ziru Ren ,  Yinan Han

    IPC分类号： G02F1/1343 ,  G02F1/1333

    CPC分类号： G02F1/136277 ,  G02F1/133553 ,  G02F1/136209 ,  G02F1/136213

    摘要： In a specific embodiment, the present invention provides an LCOS device. The device has a semiconductor substrate, e.g., silicon substrate. The device has a transistor formed within the semiconductor substrate. The transistor has a first node, a second node, and a row node. A first capacitor structure is coupled to the transistor. The first capacitor structure includes a first polysilicon layer coupled to the second node of the transistor. The first capacitor structure also has a first capacitor insulating layer overlying the first polysilicon layer and a second polysilicon layer overlying the insulating layer. The second polysilicon layer is coupled to a reference potential, e.g., ground. The device has a second capacitor structure coupled to the transistor. The second capacitor structure has a first metal layer coupled to the reference potential, a second capacitor insulating layer, and a second metal layer coupled to the second node of the transistor. A pixel electrode comprises the first metal layer. The pixel electrode is coupled to the second node of the transistor. A mirror surface is on the pixel electrode. The device has a light shielding layer formed from a portion of the second metal layer.

    摘要翻译： 在具体实施例中，本发明提供一种LCOS装置。 该器件具有半导体衬底，例如硅衬底。 该器件具有形成在半导体衬底内的晶体管。 晶体管具有第一节点，第二节点和行节点。 第一电容器结构耦合到晶体管。 第一电容器结构包括耦合到晶体管的第二节点的第一多晶硅层。 第一电容器结构还具有覆盖第一多晶硅层的第一电容器绝缘层和覆盖绝缘层的第二多晶硅层。 第二多晶硅层耦合到参考电位，例如接地。 该器件具有耦合到晶体管的第二电容器结构。 第二电容器结构具有耦合到参考电位的第一金属层，第二电容器绝缘层和耦合到晶体管的第二节点的第二金属层。 像素电极包括第一金属层。 像素电极耦合到晶体管的第二节点。 镜面位于像素电极上。 该器件具有由第二金属层的一部分形成的遮光层。

    METHOD AND RESULTING CAPACITOR STRUCTURE FOR LIQUID CRYSTAL ON SILICON DISPLAY DEVICES
    6.
    发明申请
    METHOD AND RESULTING CAPACITOR STRUCTURE FOR LIQUID CRYSTAL ON SILICON DISPLAY DEVICES 有权
    硅晶体显示器件上液晶的方法和结果电容结构

    公开(公告)号：US20100283926A1

    公开(公告)日：2010-11-11

    申请号：US12259160

    申请日：2008-10-27

    申请人： Herb Huang ,  Wei Min Li ,  Haiting Li ,  Ziru Ren ,  Yinan Han

    发明人： Herb Huang ,  Wei Min Li ,  Haiting Li ,  Ziru Ren ,  Yinan Han

    IPC分类号： G02F1/1368 ,  H01L33/00

    CPC分类号： G02F1/136277 ,  G02F1/133553 ,  G02F1/136209 ,  G02F1/136213

    摘要： In a specific embodiment, the present invention provides an LCOS device. The device has a semiconductor substrate, e.g., silicon substrate. The device has a transistor formed within the semiconductor substrate. The transistor has a first node, a second node, and a row node. A first capacitor structure is coupled to the transistor. The first capacitor structure includes a first polysilicon layer coupled to the second node of the transistor. The first capacitor structure also has a first capacitor insulating layer overlying the first polysilicon layer and a second polysilicon layer overlying the insulating layer. The second polysilicon layer is coupled to a reference potential, e.g., ground. The device has a second capacitor structure coupled to the transistor. The second capacitor structure has a first metal layer coupled to the reference potential, a second capacitor insulating layer, and a second metal layer coupled to the second node of the transistor. A pixel electrode comprises the first metal layer. The pixel electrode is coupled to the second node of the transistor. A mirror surface is on the pixel electrode. The device has a light shielding layer formed from a portion of the second metal layer.

    摘要翻译： 在具体实施例中，本发明提供一种LCOS装置。 该器件具有半导体衬底，例如硅衬底。 该器件具有形成在半导体衬底内的晶体管。 晶体管具有第一节点，第二节点和行节点。 第一电容器结构耦合到晶体管。 第一电容器结构包括耦合到晶体管的第二节点的第一多晶硅层。 第一电容器结构还具有覆盖第一多晶硅层的第一电容器绝缘层和覆盖绝缘层的第二多晶硅层。 第二多晶硅层耦合到参考电位，例如接地。 该器件具有耦合到晶体管的第二电容器结构。 第二电容器结构具有耦合到参考电位的第一金属层，第二电容器绝缘层和耦合到晶体管的第二节点的第二金属层。 像素电极包括第一金属层。 像素电极耦合到晶体管的第二节点。 镜面位于像素电极上。 该器件具有由第二金属层的一部分形成的遮光层。

    METHOD AND RESULTING CAPACITOR STRUCTURE FOR LIQUID CRYSTAL ON SILICON DISPLAY DEVICES
    8.
    发明申请
    METHOD AND RESULTING CAPACITOR STRUCTURE FOR LIQUID CRYSTAL ON SILICON DISPLAY DEVICES 有权
    硅晶体显示器件上液晶的方法和结果电容结构

    公开(公告)号：US20120081649A1

    公开(公告)日：2012-04-05

    申请号：US13081471

    申请日：2011-04-06

    申请人： Wei Min Li ,  Herb H. Huang

    发明人： Wei Min Li ,  Herb H. Huang

    IPC分类号： G02F1/1343 ,  H01L33/58

    CPC分类号： H01L28/60 ,  G02F1/136213 ,  G02F1/136277 ,  G02F2001/13685 ,  H01L21/84 ,  H01L27/10852 ,  H01L27/10894

    摘要： A liquid crystal on silicon display device (LCOS) has a semiconductor substrate comprising a surface region and a gate dielectric layer overlying the surface region. The device also has a word line formed overlying the gate dielectric layer and a first source/drain region coupled to the word line. The device has a bottom electrode structure formed overlying an interlayer dielectric. A capacitor dielectric is formed overlying the bottom electrode. A top electrode structure is formed overlying the capacitor dielectric to form a capacitor structure including the bottom electrode structure, the capacitor dielectric, and the top electrode structure. The device has a mirror surface formed overlying the top electrode structure to form a pixel electrode structure and a liquid crystal material provided overlying the mirror surface. In an embodiment, the LCOS described above is in an integrated circuit chip that also includes a DRAM device.

    摘要翻译： 液晶硅显示装置（LCOS）具有半导体衬底，其包括覆盖表面区域的表面区域和栅极电介质层。 该器件还具有形成在栅电介质层上的字线和耦合到字线的第一源/漏区。 该器件具有形成在层间电介质上的底部电极结构。 在底部电极上形成电容器电介质。 顶部电极结构形成在电容器电介质上，以形成包括底部电极结构，电容器电介质和顶部电极结构的电容器结构。 该器件具有形成在顶部电极结构上方的镜面以形成像素电极结构和设置在镜面上的液晶材料。 在一个实施例中，上述LCOS在还包括DRAM设备的集成电路芯片中。

    Method and resulting capacitor structure for liquid crystal on silicon display devices
    9.
    发明授权
    Method and resulting capacitor structure for liquid crystal on silicon display devices 有权
    用于液晶显示器件的方法和电容器结构

    公开(公告)号：US08681283B2

    公开(公告)日：2014-03-25

    申请号：US13081471

    申请日：2011-04-06

    申请人： Wei Min Li ,  Herb H. Huang

    发明人： Wei Min Li ,  Herb H. Huang

    IPC分类号： G02F1/1368

    CPC分类号： H01L28/60 ,  G02F1/136213 ,  G02F1/136277 ,  G02F2001/13685 ,  H01L21/84 ,  H01L27/10852 ,  H01L27/10894

    摘要： A liquid crystal on silicon display device (LCOS) has a semiconductor substrate comprising a surface region and a gate dielectric layer overlying the surface region. The device also has a word line formed overlying the gate dielectric layer and a first source/drain region coupled to the word line. The device has a bottom electrode structure formed overlying an interlayer dielectric. A capacitor dielectric is formed overlying the bottom electrode. A top electrode structure is formed overlying the capacitor dielectric to form a capacitor structure including the bottom electrode structure, the capacitor dielectric, and the top electrode structure. The device has a mirror surface formed overlying the top electrode structure to form a pixel electrode structure and a liquid crystal material provided overlying the mirror surface. In an embodiment, the LCOS described above is in an integrated circuit chip that also includes a DRAM device.

    摘要翻译： 液晶硅显示装置（LCOS）具有半导体衬底，其包括覆盖表面区域的表面区域和栅极电介质层。 该器件还具有形成在栅电介质层上的字线和耦合到字线的第一源/漏区。 该器件具有形成在层间电介质上的底部电极结构。 在底部电极上形成电容器电介质。 顶部电极结构形成在电容器电介质上，以形成包括底部电极结构，电容器电介质和顶部电极结构的电容器结构。 该器件具有形成在顶部电极结构上方的镜面以形成像素电极结构和设置在镜面上的液晶材料。 在一个实施例中，上述LCOS在还包括DRAM设备的集成电路芯片中。