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    Thin films
    2.
    发明授权
    Thin films 有权
    薄膜

    公开(公告)号：US07419903B2

    公开(公告)日：2008-09-02

    申请号：US11106220

    申请日：2005-04-13

    申请人： Suvi P. Haukka ,  Ivo Raaijmakers ,  Wei Min Li ,  Juhana Kostamo ,  Hessel Sprey

    发明人： Suvi P. Haukka ,  Ivo Raaijmakers ,  Wei Min Li ,  Juhana Kostamo ,  Hessel Sprey

    IPC分类号： H01L21/4763

    CPC分类号： C23C16/029 ,  C23C16/34 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45534 ,  C30B25/14 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31641 ,  H01L21/3185 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76879 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L2221/1089

    摘要： Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses can gradually increase in frequency, forming a transition region, until pure copper is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces. In some embodiments additional seed layers or additional transition layers are provided.

    摘要翻译： 通过原子层沉积形成薄膜，由此膜的组成可以在包括自限制化学的交替脉冲的循环期间从单层变为单层。 在所示实施例中，在循环过程中引入了不同量的杂质源。 因此，即使对于非常薄的层也提供了渐变栅极电介质。 薄的2nm的栅极电介质可以从纯氧化硅到氧氮化物变化为氮化硅。 类似地，栅极电介质可以从氧化铝到氧化铝和较高介电材料（例如ZrO 2）的混合物变化为纯高k材料并返回到氧化铝。 在另一个实施例中，金属氮化物（例如，WN）首先形成为用于衬里双镶嵌沟槽和通孔的屏障。 在交替沉积工艺期间，铜可以被引入，例如分开的脉冲，并且铜源脉冲可以逐渐增加频率，形成过渡区域，直到在上表面形成纯铜。 有利的是，这些和各种其他情况下的分级组合物有助于避免诸如在尖锐材料界面处可能发生的蚀刻速率控制，电迁移和非欧姆电接触等问题。 在一些实施例中，提供了额外的种子层或附加的过渡层。

    THIN FILMS
    4.
    发明申请
    THIN FILMS 审中-公开
    薄膜

    公开(公告)号：US20110256718A1

    公开(公告)日：2011-10-20

    申请号：US13079562

    申请日：2011-04-04

    申请人： Suvi P. Haukka ,  Ivo Raaijmakers ,  Wei Min Li ,  Juhana Kostamo ,  Hessel Sprey ,  Christiaan J. Werkhoven

    发明人： Suvi P. Haukka ,  Ivo Raaijmakers ,  Wei Min Li ,  Juhana Kostamo ,  Hessel Sprey ,  Christiaan J. Werkhoven

    IPC分类号： H01L21/285

    CPC分类号： C23C16/029 ,  C23C16/34 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45534 ,  C30B25/14 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31641 ,  H01L21/3185 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76879 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L2221/1089

    摘要： Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses can gradually increase in frequency, forming a transition region, until pure copper is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces. In some embodiments additional seed layers or additional transition layers are provided.

    摘要翻译： 通过原子层沉积形成薄膜，由此膜的组成可以在包括自限制化学的交替脉冲的循环期间从单层变为单层。 在所示实施例中，在循环过程中引入了不同量的杂质源。 因此，即使对于非常薄的层也提供了梯度栅极电介质。 薄的2nm的栅极电介质可以从纯氧化硅到氧氮化物变化为氮化硅。 类似地，栅极电介质可以从氧化铝变化为氧化铝和较高电介质材料（例如，ZrO 2）到纯高k材料并返回到氧化铝的混合物。 在另一个实施例中，金属氮化物（例如，WN）首先形成为用于衬里双镶嵌沟槽和通孔的屏障。 在交替沉积工艺期间，铜可以被引入，例如分开的脉冲，并且铜源脉冲可以逐渐增加频率，形成过渡区域，直到在上表面形成纯铜。 有利的是，这些和各种其他情况下的分级组合物有助于避免诸如在尖锐材料界面处可能发生的蚀刻速率控制，电迁移和非欧姆电接触等问题。 在一些实施例中，提供了额外的种子层或附加的过渡层。

    Atomic layer deposition reactor
    6.
    发明申请
    Atomic layer deposition reactor 审中-公开
    原子层沉积反应器

    公开(公告)号：US20050092249A1

    公开(公告)日：2005-05-05

    申请号：US10991556

    申请日：2004-11-18

    申请人： Olli Kilpela ,  Ville Saanila ,  Wei-Min Li ,  Kai-Erik Elers ,  Juhana Kostamo ,  Ivo Raaijmakers ,  Ernst Granneman

    发明人： Olli Kilpela ,  Ville Saanila ,  Wei-Min Li ,  Kai-Erik Elers ,  Juhana Kostamo ,  Ivo Raaijmakers ,  Ernst Granneman

    IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/507 ,  C23C16/509 ,  C23C16/00

    CPC分类号： C23C16/45544 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/507 ,  C23C16/509

    摘要： Various reactors for growing thin films on a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants are disclosed. In one embodiment, the reactor comprises a reaction chamber. A showerhead plate divides the reaction chamber into upper and lower parts. A first precursor is directed towards the lower half of the reaction chamber and a second precursor is directed towards the upper half of the reaction chamber. The substrate is disposed within the lower half of the reaction chamber. The showerhead plate includes plurality passages such that the upper half is in communication with the lower half of the reaction chamber. In another arrangement, the upper half of the reaction chamber defines a plasma cavity in which in-situ radicals are formed. In yet another arrangement, the reaction chamber includes a shutter plate, which is configured to selectively open and close the passages in the showerhead plate. In other arrangements, the showerhead plate is arranged to modify the local flow patterns of the gases flowing through the reaction chamber.

    摘要翻译： 公开了用于通过使衬底经历气相反应物的交替重复表面反应而在衬底上生长薄膜的各种反应器。 在一个实施方案中，反应器包括反应室。 喷头板将反应室分成上部和下部。 第一前体指向反应室的下半部分，第二前体指向反应室的上半部分。 基板设置在反应室的下半部内。 喷头板包括多个通道，使得上半部分与反应室的下半部连通。 在另一种布置中，反应室的上半部限定了其中形成原位自由基的等离子体腔。 在另一种布置中，反应室包括挡板，其被构造成选择性地打开和关闭喷头板中的通道。 在其他布置中，喷头板被布置成改变流过反应室的气体的局部流动模式。

    Atomic layer deposition reactor
    7.
    发明授权
    Atomic layer deposition reactor 有权
    原子层沉积反应器

    公开(公告)号：US06820570B2

    公开(公告)日：2004-11-23

    申请号：US10222005

    申请日：2002-08-14

    申请人： Olli Kilpela ,  Ville Saanila ,  Wei-Min Li ,  Kai-Erik Elers ,  Juhana Kostamo ,  Ivo Raaijmakers ,  Ernst Granneman

    发明人： Olli Kilpela ,  Ville Saanila ,  Wei-Min Li ,  Kai-Erik Elers ,  Juhana Kostamo ,  Ivo Raaijmakers ,  Ernst Granneman

    IPC分类号： C23C16509

    CPC分类号： C23C16/45544 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/507 ,  C23C16/509

    摘要： Various reactors for growing thin films on a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants are disclosed. In one embodiment, the reactor comprises a reaction chamber. A showerhead plate divides the reaction chamber into upper and lower parts. A first precursor is directed towards the lower half of the reaction chamber and a second precursor is directed towards the upper half of the reaction chamber. The substrate is disposed within the lower half of the reaction chamber. The showerhead plate includes plurality passages such that the upper half is in communication with the lower half of the reaction chamber. In another arrangement, the upper half of the reaction chamber defines a plasma cavity in which in-situ radicals are formed. In yet another arrangement, the reaction chamber includes a shutter plate, which is configured to selectively open and close the passages in the showerhead plate. In other arrangements, the showerhead plate is arranged to modify the local flow patterns of the gases flowing through the reaction chamber.

    摘要翻译： 公开了用于通过使衬底经历气相反应物的交替重复表面反应而在衬底上生长薄膜的各种反应器。 在一个实施方案中，反应器包括反应室。 喷头板将反应室分成上部和下部。 第一前体指向反应室的下半部分，第二前体指向反应室的上半部分。 基板设置在反应室的下半部内。 喷头板包括多个通道，使得上半部分与反应室的下半部连通。 在另一种布置中，反应室的上半部限定了其中形成原位自由基的等离子体腔。 在另一种布置中，反应室包括挡板，其构造成选择性地打开和关闭喷头板中的通道。 在其他布置中，喷头板被布置成改变流过反应室的气体的局部流动模式。