公开(公告)号：US09978709B2

公开(公告)日：2018-05-22

申请号：US15276196

申请日：2016-09-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Su-Chun Yang ,  Chung-Jung Wu ,  Hsiao-Yun Chen ,  Yi-Li Hsiao ,  Chih-Hang Tung ,  Da-Yuan Shih ,  Chen-Hua Yu

IPC分类号： H01L21/44 ,  H01L23/00 ,  B23K1/00 ,  H01L23/498 ,  B23K35/02 ,  B23K35/26 ,  C22C13/00 ,  B23K101/40 ,  B23K103/08

CPC分类号： H01L24/81 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/262 ,  B23K2101/40 ,  B23K2103/08 ,  C22C13/00 ,  H01L23/49811 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/13014 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16506 ,  H01L2224/16507 ,  H01L2224/81121 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/8193 ,  H01L2224/81947 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/3841

摘要： A method of producing a solder bump joint includes heating a solder bump comprising tin above a melting temperature of the solder bump, wherein the solder bumps comprises eutectic Sn—Bi compound, and the eutectic Sn—Bi compound is free of Ag. The method further includes stretching the solder bump to increase a height of the solder bump, wherein stretching the solder bump forms lamellar structures having a contact angle of less than 90°. The method further includes cooling down the solder bump.

公开(公告)号：US09475145B2

公开(公告)日：2016-10-25

申请号：US13826362

申请日：2013-03-14

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Su-Chun Yang ,  Chung-Jung Wu ,  Hsiao-Yun Chen ,  Yi-Li Hsiao ,  Chih-Hang Tung ,  Da-Yuan Shih ,  Chen-Hua Yu

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  B23K1/00 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L24/81 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/262 ,  B23K2101/40 ,  B23K2103/08 ,  C22C13/00 ,  H01L23/49811 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/13014 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16506 ,  H01L2224/16507 ,  H01L2224/81121 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/8193 ,  H01L2224/81947 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/3841

摘要： A method includes heating a solder bump above a melting temperature of the solder bump. The solder bump is stretched to increase a height of the solder bump. The solder bump is cooled down to form a solder bump joint in an electrical device.

摘要翻译： 一种方法包括将焊料凸块加热到焊料凸块的熔化温度以上。 焊料凸块被拉伸以增加焊料凸块的高度。 焊料凸块被冷却以在电气装置中形成焊料凸块接头。

公开(公告)号：US20130221521A1

公开(公告)日：2013-08-29

申请号：US13826362

申请日：2013-03-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Su-Chun Yang ,  Chung-Jung Wu ,  Hsiao-Yun Chen ,  Yi-Li Hsiao ,  Chih-Hang Tung ,  Da-Yuan Shih ,  Chen-Hua Yu

IPC分类号： B23K1/00 ,  H01L23/498

CPC分类号： H01L24/81 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/262 ,  B23K2101/40 ,  B23K2103/08 ,  C22C13/00 ,  H01L23/49811 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/13014 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16506 ,  H01L2224/16507 ,  H01L2224/81121 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/8193 ,  H01L2224/81947 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/3841

摘要： A method includes heating a solder bump above a melting temperature of the solder bump. The solder bump is stretched to increase a height of the solder bump. The solder bump is cooled down to form a solder bump joint in an electrical device.

摘要翻译： 一种方法包括将焊料凸块加热到焊料凸块的熔化温度以上。 焊料凸块被拉伸以增加焊料凸块的高度。 焊料凸块被冷却以在电气装置中形成焊料凸块接头。

公开(公告)号：US10068868B2

公开(公告)日：2018-09-04

申请号：US15433421

申请日：2017-02-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tung-Liang Shao ,  Chih-Hang Tung ,  Wen-Lin Shih ,  Hsiao-Yun Chen ,  Chen-Hua Yu

IPC分类号： H01L23/00 ,  H01L25/00 ,  H01L21/56 ,  H01L23/31 ,  H01L25/065 ,  B23K1/00 ,  B23K1/06

摘要： A method includes performing a first strike process to strike a metal bump of a first package component against a metal pad of a second package component. A first one of the metal bump and the metal pad includes copper. A second one of the metal bump and the metal pad includes aluminum. The method further includes performing a second strike process to strike the metal bump against the metal pad. An annealing is performed to bond the metal bump on the metal pad.

公开(公告)号：US20170194278A1

公开(公告)日：2017-07-06

申请号：US15433421

申请日：2017-02-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tung-Liang Shao ,  Chih-Hang Tung ,  Wen-Lin Shih ,  Hsiao-Yun Chen ,  Chen-Hua Yu

IPC分类号： H01L23/00 ,  H01L25/00 ,  H01L21/56 ,  H01L23/31 ,  H01L25/065

CPC分类号： H01L24/16 ,  B23K1/0016 ,  B23K1/06 ,  B23K20/023 ,  B23K20/2333 ,  B23K2101/42 ,  B23K2103/10 ,  B23K2103/12 ,  B23K2103/166 ,  B23K2103/18 ,  H01L21/563 ,  H01L23/3185 ,  H01L24/05 ,  H01L24/08 ,  H01L24/13 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/08059 ,  H01L2224/08503 ,  H01L2224/13147 ,  H01L2224/1607 ,  H01L2224/16145 ,  H01L2224/16503 ,  H01L2224/81012 ,  H01L2224/81022 ,  H01L2224/81365 ,  H01L2224/81379 ,  H01L2224/8181 ,  H01L2224/81948 ,  H01L2225/06513 ,  H01L2924/01013 ,  H01L2924/01029

摘要： A method includes performing a first strike process to strike a metal bump of a first package component against a metal pad of a second package component. A first one of the metal bump and the metal pad includes copper. A second one of the metal bump and the metal pad includes aluminum. The method further includes performing a second strike process to strike the metal bump against the metal pad. An annealing is performed to bond the metal bump on the metal pad.

公开(公告)号：US09576929B1

公开(公告)日：2017-02-21

申请号：US14997727

申请日：2016-01-18

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tung-Liang Shao ,  Chih-Hang Tung ,  Wen-Lin Shih ,  Hsiao-Yun Chen ,  Chen-Hua Yu

IPC分类号： H01L23/52 ,  H01L21/44 ,  H01L23/00 ,  B23K1/00 ,  B23K1/06

CPC分类号： H01L24/16 ,  B23K1/0016 ,  B23K1/06 ,  B23K20/023 ,  B23K20/2333 ,  B23K2101/42 ,  B23K2103/10 ,  B23K2103/12 ,  B23K2103/166 ,  B23K2103/18 ,  H01L21/563 ,  H01L23/3185 ,  H01L24/05 ,  H01L24/08 ,  H01L24/13 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/08059 ,  H01L2224/08503 ,  H01L2224/13147 ,  H01L2224/1607 ,  H01L2224/16145 ,  H01L2224/16503 ,  H01L2224/81012 ,  H01L2224/81022 ,  H01L2224/81365 ,  H01L2224/81379 ,  H01L2224/8181 ,  H01L2224/81948 ,  H01L2225/06513 ,  H01L2924/01013 ,  H01L2924/01029

摘要： A method includes performing a first strike process to strike a metal bump of a first package component against a metal pad of a second package component. A first one of the metal bump and the metal pad includes copper. A second one of the metal bump and the metal pad includes aluminum. The method further includes performing a second strike process to strike the metal bump against the metal pad. An annealing is performed to bond the metal bump on the metal pad.

摘要翻译： 一种方法包括执行第一打击过程以将第一包装部件的金属凸块抵靠第二包装部件的金属垫。 金属凸块和金属垫中的第一个包括铜。 金属凸块和金属垫中的第二个包括铝。 该方法还包括执行第二击打过程以将金属凸块撞击金属垫。 执行退火以将金属凸块接合在金属垫上。

公开(公告)号：US10229901B2

公开(公告)日：2019-03-12

申请号：US15194170

申请日：2016-06-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tung-Liang Shao ,  Yi-Li Hsiao ,  Hsiao-Yun Chen ,  Chih-Hang Tung ,  Chen-Hua Yu

IPC分类号： H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L25/00 ,  H01L21/56 ,  H01L21/78 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065 ,  H01L25/03

摘要： Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a device includes coupling a first semiconductor device to a second semiconductor device by spacers. The first semiconductor device has first contact pads disposed thereon, and the second semiconductor device has second contact pads disposed thereon. The method includes forming an immersion interconnection between the first contact pads of the first semiconductor device and the second contact pads of the second semiconductor device.

公开(公告)号：US20170373050A1

公开(公告)日：2017-12-28

申请号：US15194170

申请日：2016-06-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tung-Liang Shao ,  Yi-Li Hsiao ,  Hsiao-Yun Chen ,  Chih-Hang Tung ,  Chen-Hua Yu

IPC分类号： H01L25/00 ,  H01L25/065 ,  H01L23/00 ,  H01L21/56 ,  H01L21/78 ,  H01L23/498

CPC分类号： H01L25/50 ,  H01L21/565 ,  H01L21/78 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/09 ,  H01L24/11 ,  H01L24/17 ,  H01L24/81 ,  H01L25/03 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2224/11464 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/1316 ,  H01L2224/13164 ,  H01L2224/13173 ,  H01L2224/81007 ,  H01L2225/06513 ,  H01L2225/06548 ,  H01L2225/06568 ,  H01L2225/06593 ,  H01L2924/15311

摘要： Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a device includes coupling a first semiconductor device to a second semiconductor device by spacers. The first semiconductor device has first contact pads disposed thereon, and the second semiconductor device has second contact pads disposed thereon. The method includes forming an immersion interconnection between the first contact pads of the first semiconductor device and the second contact pads of the second semiconductor device.