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    BONDED SEMICONDUCTOR STRUCTURES
    1.
    发明申请
    BONDED SEMICONDUCTOR STRUCTURES 审中-公开

    公开(公告)号：US20200266051A1

    公开(公告)日：2020-08-20

    申请号：US16866131

    申请日：2020-05-04

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Jing-Cheng LIN

    IPC: H01L21/02 ,  H01L21/822 ,  H01L27/06

    Abstract: A method is disclosed that includes operations as follows: after forming an ion-implanted layer disposed between an epitaxial layer and a first semiconductor substrate, bounding the epitaxial layer to a bonding oxide layer without forming any layer between the epitaxial layer and the bonding oxide layer; and removing the first semiconductor substrate together with a portion of the ion-implanted layer and keeping a remaining portion of the ion-implanted layer on the epitaxial layer.

    BONDED SEMICONDUCTOR STRUCTURES
    4.
    发明申请
    BONDED SEMICONDUCTOR STRUCTURES 有权

    公开(公告)号：US20220277954A1

    公开(公告)日：2022-09-01

    申请号：US17745182

    申请日：2022-05-16

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Jing-Cheng LIN

    IPC: H01L21/02 ,  H01L27/06 ,  H01L21/822

    Abstract: A method is provided that includes operations as follows: bonding an epitaxial layer formed with a first semiconductor substrate and an ion-implanted layer that is formed between the epitaxial layer and the first semiconductor substrate, to a bonding oxide layer of a second semiconductor substrate; separating the first semiconductor substrate from the epitaxial layer, by removing the first semiconductor substrate together with a portion of the ion-implanted layer and keeping the epitaxial layer; and forming a first semiconductor device portion on the epitaxial layer, and an interconnect layer on the first semiconductor device portion.

    HYBRID BONDING WITH THROUGH SUBSTRATE VIA (TSV)
    6.
    发明申请
    HYBRID BONDING WITH THROUGH SUBSTRATE VIA (TSV) 审中-公开

    公开(公告)号：US20180286846A1

    公开(公告)日：2018-10-04

    申请号：US15997156

    申请日：2018-06-04

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Jing-Cheng LIN

    IPC: H01L25/00 ,  H01L23/48 ,  H01L21/768 ,  H01L23/00 ,  H01L25/065

    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a bonding structure formed between a first substrate and a second substrate. The bonding structure includes a first polymer bonded to a second polymer, and a first conductive material bonded to a second conductive material. The semiconductor device includes a first TSV formed in the first substrate and an interconnect structure formed over the first TSV. The first TSV is between the interconnect structure and the bonding structure.

    HYBRID BONDING WITH THROUGH SUBSTRATE VIA (TSV)
    8.
    发明申请
    HYBRID BONDING WITH THROUGH SUBSTRATE VIA (TSV) 审中-公开
    通过基板（TSV）混合结合

    公开(公告)号：US20150021789A1

    公开(公告)日：2015-01-22

    申请号：US14488017

    申请日：2014-09-16

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Jing-Cheng LIN

    IPC: H01L23/00 ,  H01L21/768 ,  H01L23/48

    CPC classification number: H01L24/82 ,  H01L21/76897 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/02 ,  H01L24/80 ,  H01L27/0688 ,  H01L2224/05547 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/08147 ,  H01L2224/80203 ,  H01L2224/80357 ,  H01L2224/80855 ,  H01L2224/80895 ,  H01L2224/80905 ,  H01L2224/9202 ,  H01L2924/00012 ,  H01L2924/00014

    Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a first semiconductor wafer and a second semiconductor wafer bonded via a hybrid bonding structure, and the hybrid bonding structure includes a first conductive material embedded in a polymer material and a second conductive material embedded in a second polymer material. The first conductive material of the first semiconductor wafer bonded to the second conductive material of the second semiconductor wafer and the first polymer material of the first semiconductor wafer is bonded to the second polymer material of the second semiconductor wafer. The semiconductor device structure further includes at least one through substrate via (TSV) extending from a bottom surface of the second semiconductor wafer to a top surface of the first semiconductor wafer.

    Abstract translation: 提供了一种半导体器件结构及其形成方法。 半导体器件结构包括通过混合键合结构接合的第一半导体晶片和第二半导体晶片，并且该混合键合结构包括嵌入聚合物材料中的第一导电材料和嵌入第二聚合物材料中的第二导电材料。 与第二半导体晶片的第二导电材料接合的第一半导体晶片的第一导电材料和第一半导体晶片的第一聚合物材料接合到第二半导体晶片的第二聚合物材料。 半导体器件结构还包括从第二半导体晶片的底表面延伸到第一半导体晶片的顶表面的至少一个贯穿衬底通孔（TSV）。

    METHOD FOR FORMING CHIP PACKAGE STRUCTURE
    10.
    发明申请
    METHOD FOR FORMING CHIP PACKAGE STRUCTURE 审中-公开

    公开(公告)号：US20190115306A1

    公开(公告)日：2019-04-18

    申请号：US16229021

    申请日：2018-12-21

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Jing-Cheng LIN ,  Po-Hao TSAI

    IPC: H01L23/552 ,  H01L21/56 ,  H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L25/065

    Abstract: Methods for forming chip package structures are provided. The method includes disposing a first chip structure, a second chip structure over a carrier substrate and forming a molding compound layer surrounding the first chip structure and the second chip structure. The method includes forming a dielectric structure over the molding compound layer and a first grounding line in the dielectric structure and cutting the first grounding line to form a first end enlarged portion of the first grounding line. In addition, the first end enlarged portion has a gradually increased thickness.

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