摘要:
A process for forming an etching pattern, which includes selectively irradiating a light to a clean surface of a material to be worked by etching so as to form radicals from a photoradical forming substance in an atmosphere of the substance, forming a modified portion having an etching resistance at a photo-irradiated portion of the surface, and then subjecting an unmodified portion of the surface of the material to be worked to an etching treatment, thereby forming an etching pattern corresponding to a pattern formed by the irradiation.
摘要:
A process for forming an etching pattern, which includes selectively irradiating a light to a clean surface of a material to be worked by etching so as to form radicals from a photoradical forming substance in an atmosphere of the substance, forming a modified portion having an etching resistance at a photo-irradiated portion of the surface, and then subjecting an unmodified portion of the surface of the material to be worked to an etching treatment, thereby forming an etching pattern corresponding to a pattern formed by the irradiation.
摘要:
A photomask or a light-shielding member has a support capable of transmitting light, a light-shielding pattern which shields the light and a light absorbing member provided corresponding to the light-shielding pattern. In one aspect, the light-shielding pattern and the light absorbing member are provided on the same side of the support. In another aspect, the light-shielding pattern and the light absorbing member are provided with the support sandwiched therebetween.
摘要:
A method for fine processing includes a first step in which a first reaction gas is introduced into a reaction chamber which contains a material to be processed, followed by irradiation with light to form an active layer on the surface of the material through photochemical reaction between the material and the first reaction gas, a second step in which the active layer is selectively irradiated with energy in an atmosphere of a second reaction gas to cause a chemical change only in the irradiated portion to form a latent image layer, a third step in which either the latent image layer or active layer is removed and a fourth step in which, using the portion left unremoved in the third step as a shield mask, the portion other than the masked portion is etched.
摘要:
An apparatus for fine processing includes a support for supporting a material to be processed, an active layer forming device for forming an active layer on the surface of the material by irradiating the material with light in a reaction gas, a latent image forming device for selectively irradiating the active layer with energy in the reaction gas to form a latent image, a shield mask forming device for removing either the latent image layer or the active layer to form a shield mask and an etching device for etching the portion other than the mask portion using the portion left unetched as the shield mask.
摘要:
An image-forming apparatus has a rear plate including electron-emitting devices formed thereon, a face plate including a fluorescent film formed thereon and being disposed to face the rear plate, flat plate spacers disposed between the rear plate and the face plate, and an outer frame surrounding peripheral edges of the rear plate and the face plate. Electrons emitted from the electron-emitting devices are irradiated to the fluorescent film to thereby display an image under condition where an inner space of a container constructed by the rear plate, the face plate and the outer frame is evacuated through a vent tube into a depressurized state. The vent tube is attached to a side of the outer frame that is positioned across an imaginary extension of the flat-plate spacer in the longitudinal direction thereof, or to the face plate or the rear plate in the vicinity of that side of the outer frame. With such arrangements, evacuation conductance is increased to reduce an evacuation time, and a higher vacuum level is achieved in the container so that an image can be stably displayed for a long time.
摘要:
An image-forming apparatus has a rear plate including electron-emitting devices formed thereon, a face plate including a fluorescent film formed thereon and being disposed to face the rear plate, flat plate spacers disposed between the rear plate and the face plate, and an outer frame surrounding peripheral edges of the rear plate and the face plate. Electrons emitted from the electron-emitting devices are irradiated to the fluorescent film to thereby display an image under condition where an inner space of a container constructed by the rear plate, the face plate and the outer frame is evacuated through a vent tube into a depressurized state. The vent tube is attached to a side of the outer frame that is positioned across an imaginary extension of the flat-plate spacer in the longitudinal direction thereof, or to the face plate or the rear plate in the vicinity of that side of the outer frame. With such arrangements, evacuation conductance is increased to reduce an evacuation time, and a higher vacuum level is achieved in the container so that an image can be stably displayed for a long time.
摘要:
An image display apparatus includes a display panel formed by arranging in juxtaposition a face plate carrying thereon a phosphor and a rear plate carrying thereon electron-emitting devices within a housing. The phosphor is so arranged as to be irradiated with electrons emitted from the electron-emitting devices to display images. The image display apparatus further includes an air blower for causing air to flow between the display panel and the housing.
摘要:
A processing method for etching a substrate is described. This method includes subjecting a surface of a substrate to be processed to selective irradiation with a light in a gas atmosphere to form a surface-modified layer. The substrate surface with the surface-modified layer is then annealed to stabilize and make the surface-modified layer more etch resistant. Both the stabilized surface-modified layer and a non-modified portion of the substrate are then subjected to dry etching, thereby utilizing the higher resistance to dry etching of the stabilized surface-modified layer compared to the non-modified portion to selectively etch the non-modified portion to a desired depth.
摘要:
A processing method is described which has a first step of depositing on a substrate a specimen film which may be any one of a semiconductor, a metal and a insulator.In a second step, the surface of the specimen film deposited in the first step, is irradiated with an ion beam to produce a physical damage on the surface, next, in a third step, the damaged specimen film surface is selectively irradiated with the light to partially cause a photochemical reaction so that a mask pattern, which depends on the desired device structure, is formed on the film surface. Finally, in a fourth step, photoetching is performed using the mask pattern formed in the third step as a shielding member.