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1.发明授权公开(公告)号：US07425474B2
公开(公告)日：2008-09-16
申请号：US11060726
申请日：2005-02-18
CPC分类号： H01L51/0021 , H01L51/0004 , H01L51/0097 , H01L51/0516 , H01L51/0541 , H01L51/0545
摘要： A method of manufacturing a transistor includes the step of forming on a substrate a source electrode and drain electrode by selective electroless plating after patterning a charge control agent attached to the substrate using light, and the step of forming an organic semiconductor, a gate insulation layer, and a gate electrode.
摘要翻译： 一种晶体管的制造方法，其特征在于，在使用光图案化附着在基板上的电荷控制剂图案化后，通过选择性无电解电镀在基板上形成源电极和漏电极的工序，形成有机半导体，栅极绝缘层 ，和栅电极。
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2.发明授权Method of manufacturing a thin film transistor, thin film transistor, thin film transistor circuit, electronic device, and electronic apparatus 有权制造薄膜晶体管，薄膜晶体管，薄膜晶体管电路，电子器件和电子设备的方法公开(公告)号：US07361594B2
公开(公告)日：2008-04-22
申请号：US10988634
申请日：2004-11-16
IPC分类号： H01L21/44
CPC分类号： H01L51/0541 , C23C18/1605 , C23C18/1893 , C23C18/2086 , C23C18/24 , C23C18/31 , G02F1/1368 , G02F1/167 , H01L51/0021 , H01L51/055 , H01L51/102
摘要： Aspects of the invention can provide a method of manufacturing a thin film transistor capable of manufacturing a high-performance thin film transistor with a simple process, a thin film transistor manufactured using the method of manufacturing a thin film transistor, and a thin film transistor circuit, an electronic device, and an electronic apparatus each equipped with the thin film transistor. The method of manufacturing a thin film transistor according to the invention can include the first step of forming a source electrode and a drain electrode on a substrate by an electroless plating process, the second step of forming an organic semiconductor layer in at least an area between the source electrode and the drain electrode using a costing method, the third step of forming a gate insulating layer on the organic semiconductor layer using a coating method, and the fourth step of forming a gate electrode using a coating method so as to overlap an area on the gate insulating layer and between the source electrode and the drain electrode.
摘要翻译： 本发明的方面可以提供一种制造能够以简单的工艺制造高性能薄膜晶体管的薄膜晶体管的方法，使用制造薄膜晶体管的方法制造的薄膜晶体管和薄膜晶体管电路 ，电子设备和各自配备有薄膜晶体管的电子设备。 根据本发明的制造薄膜晶体管的方法可以包括通过无电镀方法在基板上形成源电极和漏电极的第一步骤，第二步是在有机半导体层之间的至少一个区域之间形成有机半导体层 使用成本计算方法的源电极和漏电极，使用涂布方法在有机半导体层上形成栅极绝缘层的第三步骤，以及第四步骤，使用涂覆方法形成栅电极以与区域重叠 在栅极绝缘层上以及源电极和漏电极之间。
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3.发明申请公开(公告)号：US20050186699A1
公开(公告)日：2005-08-25
申请号：US11060726
申请日：2005-02-18
IPC分类号： G02F1/1343 , G02F1/1368 , G02F1/167 , H01L21/288 , H01L21/3205 , H01L21/336 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/40 , H01L51/50 , H05B33/14 , H01L21/44 , H01L21/84
CPC分类号： H01L51/0021 , H01L51/0004 , H01L51/0097 , H01L51/0516 , H01L51/0541 , H01L51/0545
摘要： A method of manufacturing a transistor includes the step of forming on a substrate a source electrode and drain electrode by selective electroless plating after patterning a charge control agent attached to the substrate using light, and the step of forming an organic semiconductor, a gate insulation layer, and a gate electrode.
摘要翻译： 一种制造晶体管的方法包括以下步骤：在使用光图案化附着在基片上的电荷控制剂图案化之后，通过选择性无电镀在基板上形成源电极和漏电极，以及形成有机半导体，栅极绝缘层 ，和栅电极。
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4.发明申请Method of manufacturing a thin film transistor, thin film transistor, thin film transistor circuit, electronic device, and electronic apparatus 有权制造薄膜晶体管，薄膜晶体管，薄膜晶体管电路，电子器件和电子设备的方法公开(公告)号：US20050151195A1
公开(公告)日：2005-07-14
申请号：US10988634
申请日：2004-11-16
IPC分类号： H01L21/28 , C23C18/16 , C23C18/18 , C23C18/31 , C25D3/00 , G02F1/1368 , G02F1/167 , H01L21/20 , H01L21/288 , H01L21/336 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786 , H01L51/05 , H01L51/40 , H01L21/84 , H01L31/0392
CPC分类号： H01L51/0541 , C23C18/1605 , C23C18/1893 , C23C18/2086 , C23C18/24 , C23C18/31 , G02F1/1368 , G02F1/167 , H01L51/0021 , H01L51/055 , H01L51/102
摘要： Aspects of the invention can provide a method of manufacturing a thin film transistor capable of manufacturing a high-performance thin film transistor with a simple process, a thin film transistor manufactured using the method of manufacturing a thin film transistor, and a thin film transistor circuit, an electronic device, and an electronic apparatus each equipped with the thin film transistor. The method of manufacturing a thin film transistor according to the invention can include the first step of forming a source electrode and a drain electrode on a substrate by an electroless plating process, the second step of forming an organic semiconductor layer in at least an area between the source electrode and the drain electrode using a costing method, the third step of forming a gate insulating layer on the organic semiconductor layer using a coating method, and the fourth step of forming a gate electrode using a coating method so as to overlap an area on the gate insulating layer and between the source electrode and the drain electrode.
摘要翻译： 本发明的方面可以提供一种制造能够以简单的工艺制造高性能薄膜晶体管的薄膜晶体管的方法，使用制造薄膜晶体管的方法制造的薄膜晶体管和薄膜晶体管电路 ，电子设备和各自配备有薄膜晶体管的电子设备。 根据本发明的制造薄膜晶体管的方法可以包括通过无电镀方法在基板上形成源电极和漏电极的第一步骤，第二步是在有机半导体层之间的至少一个区域之间形成有机半导体层 使用成本计算方法的源电极和漏电极，使用涂布方法在有机半导体层上形成栅极绝缘层的第三步骤，以及第四步骤，使用涂覆方法形成栅电极以与区域重叠 在栅极绝缘层上以及源电极和漏电极之间。
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公开(公告)号：US07597813B2
公开(公告)日：2009-10-06
申请号：US11906549
申请日：2007-10-02
IPC分类号： H01B13/00 , H01L21/302
CPC分类号： H05K3/20 , C23C18/1608 , C23C18/1657 , C23C18/1689 , C23C18/2086 , C23C18/36 , H05K3/107 , H05K2201/09036 , H05K2201/09981 , H05K2203/0108 , H05K2203/0113 , H05K2203/072 , Y10S977/887 , Y10T428/24479 , Y10T428/26
摘要： A method of manufacturing an element substrate including: forming a release layer on a first support substrate; forming a metal layer having a predetermined pattern on the release layer; disposing a second support substrate on the first support substrate so that the metal layer is interposed between the first and second support substrates; pouring a resin material in a fluid state between the first and second support substrates; curing the resin material to form a resin substrate; and removing the metal layer from the first support substrate by decomposing the release layer to transfer the metal layer to the resin substrate.
摘要翻译： 一种元件基板的制造方法，包括：在第一支撑基板上形成剥离层; 在剥离层上形成具有预定图案的金属层; 在所述第一支撑基板上设置第二支撑基板，使得所述金属层介于所述第一和第二支撑基板之间; 在第一和第二支撑基板之间浇注处于流体状态的树脂材料; 固化树脂材料以形成树脂基材; 以及通过分解所述剥离层以将所述金属层转移到所述树脂基板，从所述第一支撑基板移除所述金属层。
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公开(公告)号：US20080081154A1
公开(公告)日：2008-04-03
申请号：US11906549
申请日：2007-10-02
CPC分类号： H05K3/20 , C23C18/1608 , C23C18/1657 , C23C18/1689 , C23C18/2086 , C23C18/36 , H05K3/107 , H05K2201/09036 , H05K2201/09981 , H05K2203/0108 , H05K2203/0113 , H05K2203/072 , Y10S977/887 , Y10T428/24479 , Y10T428/26
摘要： A method of manufacturing an element substrate including: forming a release layer on a first support substrate; forming a metal layer having a predetermined pattern on the release layer; disposing a second support substrate on the first support substrate so that the metal layer is interposed between the first and second support substrates; pouring a resin material in a fluid state between the first and second support substrates; curing the resin material to form a resin substrate; and removing the metal layer from the first support substrate by decomposing the release layer to transfer the metal layer to the resin substrate.
摘要翻译： 一种元件基板的制造方法，包括：在第一支撑基板上形成剥离层; 在剥离层上形成具有预定图案的金属层; 在所述第一支撑基板上设置第二支撑基板，使得所述金属层介于所述第一和第二支撑基板之间; 在第一和第二支撑基板之间浇注处于流体状态的树脂材料; 固化树脂材料以形成树脂基材; 以及通过分解所述剥离层以将所述金属层转移到所述树脂基板，从所述第一支撑基板移除所述金属层。
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7.发明申请公开(公告)号：US20050170652A1
公开(公告)日：2005-08-04
申请号：US11050252
申请日：2005-02-03
IPC分类号： C23C18/28 , C23C18/16 , H01L21/288 , H01L21/302 , H01L21/461 , H01L21/48 , H01L23/12 , H01L23/29 , H05K3/18
CPC分类号： H01L21/4846 , C23C18/1608 , C23C18/2086 , C23C18/285 , C23C18/30 , H01L21/288 , H05K3/182 , H05K2203/013
摘要： A method for manufacturing a wiring substrate includes the steps of (a) providing a first surface-active agent in first and second areas and of a substrate, (b) providing a second surface-active agent in the first area of the substrate, (c) providing a catalyst on the second surface-active agent, and (d) depositing a metal layer on the catalyst to thereby form a wiring composed of the metal layer along the first area.
摘要翻译： 一种制造布线基板的方法包括以下步骤：（a）在第一和第二区域中提供第一表面活性剂和基材，（b）在基材的第一区域中提供第二表面活性剂（ c）在第二表面活性剂上提供催化剂，和（d）在催化剂上沉积金属层，从而形成沿着第一区域由金属层构成的布线。
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8.发明申请Method for manufacturing wiring substrate and method for manufacturing electronic device 审中-公开制造布线基板的方法及其制造方法公开(公告)号：US20050170622A1
公开(公告)日：2005-08-04
申请号：US11050254
申请日：2005-02-03
CPC分类号： C23C18/208 , C23C18/1607 , C23C18/204 , C23C18/31 , H05K3/185
摘要： A method for manufacturing a wiring substrate includes the steps of (a) irradiating a vacuum ultraviolet radiation on a second area of a substrate having a first area and the second area to thereby break down an interatomic bond in the second area of the substrate, (b) providing a catalyst in the first and second areas of the substrate, (c) washing the substrate to thereby remove a portion of the catalyst provided in the second area, and (d) depositing a metal layer on a portion of the catalyst remaining in the first area to thereby form a wiring composed of the metal layer along the first area.
摘要翻译： 一种制造布线基板的方法包括以下步骤：（a）在具有第一区域和第二区域的基板的第二区域上照射真空紫外线辐射，从而分解基板的第二区域中的原子间键合（ b）在衬底的第一和第二区域中提供催化剂，（c）洗涤衬底，从而去除第二区域中提供的一部分催化剂，和（d）在催化剂剩余部分上沉积金属层 从而形成沿着第一区域由金属层构成的布线。
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9.发明授权Method of manufacturing complex metal oxide powder and amorphous complex metal oxide 有权制备复合金属氧化物粉末和无定形复合金属氧化物的方法公开(公告)号：US08012449B2
公开(公告)日：2011-09-06
申请号：US11821882
申请日：2007-06-26
IPC分类号： C01G25/02 , C01G23/04 , C01G27/02 , C01G21/02 , C01G31/02 , C01G33/00 , C01G35/00 , C01G41/02 , H01L41/18
CPC分类号： C01G1/02 , C01G25/006 , C01G33/006 , C01G35/006 , C01P2002/34 , C04B35/491 , C04B35/493 , C04B35/624 , C04B35/6264 , C04B35/6325 , C04B2235/3251 , C04B2235/3287 , C04B2235/3418 , C04B2235/441 , C04B2235/449
摘要： A method of manufacturing a complex metal oxide powder, the method including: preparing a raw material composition for forming a complex metal oxide; mixing an oxidizing solution including an oxidizing substance into the raw material composition to produce complex metal oxide particles to obtain a liquid dispersion of the particles; and separating the particles from the liquid dispersion to obtain a complex metal oxide powder. The complex metal oxide is shown by a general formula AB1−xCxO3, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, and an element C including at least one of Nb and Ta. The raw material composition includes: at least one of a thermally-decomposable organometallic compound including the element A, the element B, or the element C, a hydrolyzable organometallic compound including the element A, the element B, or the element C, and a partial hydrolyzate and/or a polycondensate of the hydrolyzable organometallic compound; at least one of a polycarboxylic acid and a polycarboxylic acid ester; and an organic solvent.
摘要翻译： 一种复合金属氧化物粉末的制造方法，其特征在于，包括：制备复合金属氧化物的原料组合物， 将包含氧化物质的氧化溶液混合到原料组合物中以制备复合金属氧化物颗粒以获得颗粒的液体分散体; 并从分散液中分离颗粒，得到复合金属氧化物粉末。 复合金属氧化物由通式AB1-xCxO3表示，元素A至少包括Pb，元素B包括Zr，Ti，V，W和Hf中的至少一种，元素C包括以下各项中的至少一种： Nb和Ta。 原料组合物包括：包含元素A，元素B或元素C的可热分解的有机金属化合物中的至少一种，包含元素A，元素B或元素C的可水解的有机金属化合物，以及 部分水解产物和/或可水解的有机金属化合物的缩聚物; 多元羧酸和多元羧酸酯中的至少一种; 和有机溶剂。
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公开(公告)号：US07966720B2
公开(公告)日：2011-06-28
申请号：US11906550
申请日：2007-10-02
IPC分类号： H05K3/30
CPC分类号： H05K3/107 , H05K3/045 , H05K3/20 , H05K2203/0108 , H05K2203/072 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156 , Y10T29/49165 , Y10T428/26
摘要： A method of manufacturing an element substrate including: forming a release layer on a first support substrate; forming a metal layer having a predetermined pattern on the release layer; applying a sol-gel solution including a material for an inorganic substrate to the first support substrate; removing a solvent from the sol-gel solution by heat treatment to form the inorganic substrate; and removing the metal layer from the first support substrate by decomposing the release layer to transfer the metal layer to the inorganic substrate.
摘要翻译： 一种元件基板的制造方法，包括：在第一支撑基板上形成剥离层; 在剥离层上形成具有预定图案的金属层; 将包含无机基材的材料的溶胶 - 凝胶溶液施加到所述第一支撑基板上; 通过热处理从溶胶 - 凝胶溶液中除去溶剂以形成无机基质; 以及通过分解所述剥离层以将所述金属层转移到所述无机基板，从所述第一支撑基板移除所述金属层。
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