公开(公告)号：US5982197A

公开(公告)日：1999-11-09

申请号：US888267

申请日：1997-07-03

申请人： Takeshi Ono ,  Satoshi Nonaka ,  Kaoru Terashima

发明人： Takeshi Ono ,  Satoshi Nonaka ,  Kaoru Terashima

IPC分类号： H01L27/06 ,  H01L21/8249 ,  H03K19/003 ,  H03K19/096 ,  H03K19/0948

CPC分类号： H03K19/0963 ,  H03K19/00361

摘要： A dynamic circuit that prevents a malfunction, even when the operating temperature is high, including a pre-charging circuit connected between a power source node and a signal wiring, a plurality of discharging circuits being connected between a power source node and a signal wiring, a plurality f discharging circuit connected between the signal wiring and a ground potential respectively and for being selectively turn-ON/OFF controlled, a leakage current detecting circuit for detecting a current corresponding to a leakage current generated between the signal wiring and the ground potential in the turn-OFF state of each discharging circuit, and a leakage current correcting circuit connected between the power source node and the signal wiring and for continuously supplying to the signal wiring a leakage correction current equivalent to a leakage current of the signal wiring corresponding to a detected current of the leakage current detecting circuit during a leakage current correction period.

摘要翻译： 一种动态电路，即使在工作温度高的情况下也能够防止故障，包括连接在电源节点和信号线之间的预充电电路，多个放电电路连接在电源节点和信号线之间， 分别连接在信号线和接地电位之间的多个f放电电路，并且用于选择性地导通/截止控制;漏电流检测电路，用于检测与信号布线和地电位之间产生的漏电流相对应的电流 每个放电电路的关断状态和连接在电源节点和信号线之间的漏电流校正电路，并且用于向信号线连续地提供与对应于信号线的信号线的泄漏电流相当的泄漏校正电流 在泄漏电流校正pe期间检测漏电流检测电路的电流 riod。

公开(公告)号：US08987711B2

公开(公告)日：2015-03-24

申请号：US13510077

申请日：2010-11-18

申请人： Kunimasa Hiyama ,  Toshiya Kondo ,  Takeshi Ono

发明人： Kunimasa Hiyama ,  Toshiya Kondo ,  Takeshi Ono

IPC分类号： H01L51/52 ,  H01L33/34 ,  H01L33/48 ,  G02B5/02

CPC分类号： H01L51/5275 ,  G02B5/0231 ,  H01L51/5253

摘要： Provided is an organic electroluminescence element containing a light transmissive base material laminated thereon a transparent electrode, a light emitting layer and a counter electrode in this order, wherein the light transmissive base material contains a light transmissive resin substrate (resin substrate B) provided with a hard coat layer on both surfaces of the light transmissive resin substrate, the hard coat layers containing metal oxide nano particles; and the transparent electrode is formed on one hard coat layer (H1); and a rugged structure is formed on one surface of the other hard coat layer (H2), the one surface being opposite to another surface of the other hard coat layer (H2) which is contacted with the light transmissive resin substrate (resin substrate B).

摘要翻译： 本发明提供一种有机电致发光元件，其含有依次层叠在透明电极，发光层和对电极上的透光性基材，其中，所述透光性基材含有透光性树脂基板（树脂基板B） 透光性树脂基板的两面的硬涂层，含有金属氧化物纳米粒子的硬涂层; 并且透明电极形成在一个硬涂层（H1）上; 在另一个硬涂层（H2）的一个表面上形成凹凸的结构，该一个表面与另一个与透光树脂基板（树脂基板B）接触的硬涂层（H2）的另一表面相对， 。

公开(公告)号：US08200091B2

公开(公告)日：2012-06-12

申请号：US12642514

申请日：2009-12-18

申请人： Kazuhiro Kunimatsu ,  Takeshi Ono

发明人： Kazuhiro Kunimatsu ,  Takeshi Ono

IPC分类号： H04J14/02

CPC分类号： H04B10/07955 ,  H04B10/25133 ,  H04J14/0221

摘要： A wavelength division multiplexing device comprises a detection unit to detect the low-frequency signal in the optical signal; and a control unit to control to make the dispersion compensator perform a compensation operation by determining that the optical signal is being input when a low-frequency signal is detected in the optical signal in the detection unit, and to control to stop a compensation operation of the dispersion compensator by determining that there is an input break of the optical signal when a low-frequency signal is not detected in the optical signal in the detection unit.

摘要翻译： 波分复用装置包括：检测单元，用于检测光信号中的低频信号; 以及控制单元，用于通过在检测单元中的光信号中检测到低频信号时确定正在输入光信号来进行色散补偿器的补偿操作，并且控制以停止补偿操作 该色散补偿器通过在检测单元中的光信号中未检测到低频信号时确定存在光信号的输入断点。

公开(公告)号：US20120112194A1

公开(公告)日：2012-05-10

申请号：US13232251

申请日：2011-09-14

申请人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

发明人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

IPC分类号： H01L33/08

CPC分类号： H01L29/458 ,  H01L29/42384 ,  H01L29/66765

摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.

摘要翻译： 本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。 半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上 插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。 在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

公开(公告)号：US20110198606A1

公开(公告)日：2011-08-18

申请号：US13010281

申请日：2011-01-20

申请人： Koji Oda ,  Tomoyuki Irizumi ,  Naoki Nakagawa ,  Takeshi Ono

发明人： Koji Oda ,  Tomoyuki Irizumi ,  Naoki Nakagawa ,  Takeshi Ono

IPC分类号： H01L33/16 ,  H01L29/786

CPC分类号： H01L29/78696 ,  H01L29/04

摘要： An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.

摘要翻译： 本发明的示例性方面是一种薄膜晶体管，包括：形成在基板上的栅电极; 栅极绝缘膜，其包括氮化物膜并覆盖所述栅电极; 以及半导体层，其被设置为与栅极电极相对设置，其间具有栅极绝缘膜，并且具有形成在至少与氮化物膜接触的界面中的微晶半导体层，其中微晶半导体层包含氧 在至少与氮化物膜的界面附近的浓度高于含氮的浓度，氮从氮化膜扩散。

公开(公告)号：US07943859B2

公开(公告)日：2011-05-17

申请号：US10593796

申请日：2005-03-29

申请人： Tsugio Ambo ,  Satoru Fujiwara ,  Yoshikatsu Hasegawa ,  Chihiro Nakagawa ,  Takeshi Ono ,  Atsushi Urushidani ,  Tooru Kashioka ,  Katsuji Shimazawa

发明人： Tsugio Ambo ,  Satoru Fujiwara ,  Yoshikatsu Hasegawa ,  Chihiro Nakagawa ,  Takeshi Ono ,  Atsushi Urushidani ,  Tooru Kashioka ,  Katsuji Shimazawa

IPC分类号： H01R12/04

CPC分类号： H05K3/202 ,  H01R9/2466 ,  H01R12/523 ,  H05K3/041 ,  H05K3/222 ,  H05K3/308 ,  H05K3/326 ,  H05K3/328 ,  H05K3/4046 ,  H05K3/4611 ,  H05K13/0061 ,  H05K2201/0376 ,  H05K2201/0394 ,  H05K2201/0397 ,  H05K2201/09036 ,  H05K2201/09045 ,  H05K2201/091 ,  H05K2201/096 ,  H05K2201/10287 ,  H05K2201/10401 ,  H05K2201/1059 ,  H05K2201/10598 ,  H05K2203/081 ,  H05K2203/082 ,  H05K2203/167 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T428/24917

摘要： A circuit board with a simple structure is manufactured. A circuit board 19 has thereon a foil circuit 21 provided on a synthetic resin plate 20 formed by injection molding, made of a copper foil, and having a pattern different for circuit board 19. Anchor pins 20a projecting upward are provided on the resin plate 20 and passed through pinholes made in the foil circuit 21. The foil circuit 21 are positioned and secured to the resin plate 20. In a required portion of the resin plate 20, a terminal insertion hole 20c is provided, and receiving terminal 22 is secured to the required portion of the terminal insertion hole 20c and connected to the foil circuit 21.

摘要翻译： 制造具有简单结构的电路板。 电路板19上设置有箔电路21，该箔电路21设置在由铜箔制成的注塑成型的合成树脂板20上，并且具有不同于电路板19的图案。在树脂板20上设置有向上突出的锚定销20a 并通过箔片电路21中制成的针孔。箔片电路21定位并固定到树脂板20.在树脂板20的所需部分中，设置有端子插入孔20c，并且接收端子22固定到 端子插入孔20c的所需部分并连接到箔片电路21。

公开(公告)号：US07844883B2

公开(公告)日：2010-11-30

申请号：US11284210

申请日：2005-11-21

申请人： Takeshi Ono

发明人： Takeshi Ono

IPC分类号： H03M13/00

CPC分类号： H03M13/3738 ,  H03M13/3715 ,  H04L1/0045 ,  H04L1/0061 ,  H04L1/203 ,  H04L2001/0097

摘要： A regenerative relay method includes the steps of: i) calculating an error rate of a transmission path between the first half apparatus and a main apparatus; ii) calculating an error rate of a transmission path between the main apparatus and the latter apparatus; iii) adding the error rates; iv) selecting the error correction code and data before the error is corrected in the main apparatus so as to be supplied to the latter apparatus if the added error rates are lower than a designated error correction threshold; and v) selecting data after the error is corrected in the main apparatus and the other error correction code generated from the data so as to be supplied to the latter apparatus if the added error rates are higher than the designated error correction threshold.

摘要翻译： 再生中继方法包括以下步骤：i）计算上半部装置与主装置之间的传输路径的误码率; ii）计算主设备与后一设备之间的传输路径的错误率; iii）增加错误率; iv）在主装置中纠正错误之前选择纠错码和数据，以便如果所附加的误码率低于指定的纠错阈值，则将其提供给后一装置; 以及v）在主设备中纠错错误之后选择数据，以及从数据生成的其他纠错码，以便如果所添加的错误率高于指定的纠错阈值，则提供给后一设备。

公开(公告)号：US07834962B2

公开(公告)日：2010-11-16

申请号：US12330105

申请日：2008-12-08

申请人： Tetsuya Satake ,  Takumi Nakahata ,  Takanori Okumura ,  Yusuke Yamagata ,  Takeshi Ono ,  Naoki Nakagawa ,  Suguru Nagae

发明人： Tetsuya Satake ,  Takumi Nakahata ,  Takanori Okumura ,  Yusuke Yamagata ,  Takeshi Ono ,  Naoki Nakagawa ,  Suguru Nagae

IPC分类号： G02F1/1333 ,  G02F1/1335

CPC分类号： G02F1/133305 ,  G02F1/133512 ,  G02F2001/133354

摘要： In a liquid crystal display (10) having a curved display surface, long sides of pixel structures (11) are arranged along the curve direction (Y) of the display surface and on a side of counter substrate provided is a black matrix having a black matrix opening (41a) whose length in the curve direction (Y) is not longer than E−L {(T1/2)+(T2/2)+d}/R, assuming that the length of the display surface in the curve direction (Y) is L, the thickness of an array substrate is T1, the thickness of the counter substrate is T2, the size of the gap between the array substrate and the counter substrate is d, the radius of curvature of the curved display surface is R and the length of a long side of a pixel electrode (29) provided in each of the pixel structures (11) is E. It thereby becomes possible to suppress display unevenness resulting from positional misalignment of the two substrates due to curvature and provide a liquid crystal display achieving a high-quality display image.

摘要翻译： 在具有弯曲显示面的液晶显示器（10）中，像素结构（11）的长边沿着显示面的曲线方向（Y）配置，在相对基板的一侧设有具有黑色 假设曲线中的显示面的长度，曲线方向（Y）的长度不长于E-L {（T1 / 2）+（T2 / 2）+ d} / R的矩阵开口41a 方向（Y）为L，阵列基板的厚度为T1，对置基板的厚度为T2，阵列基板与对置基板的间隔尺寸为d，曲面显示面的曲率半径 是R，并且设置在每个像素结构（11）中的像素电极（29）的长边的长度为E.因此，由此可以抑制由于曲率而导致的两个基板的位置偏移导致的显示不均匀，并且提供 实现高质量显示图像的液晶显示器。

公开(公告)号：US20090159884A1

公开(公告)日：2009-06-25

申请号：US12335806

申请日：2008-12-16

申请人： Koji ODA ,  Naoki Nakagawa ,  Takeshi Ono ,  Yusuke Uchida

发明人： Koji ODA ,  Naoki Nakagawa ,  Takeshi Ono ,  Yusuke Uchida

IPC分类号： H01L29/78 ,  H01L21/02

CPC分类号： H01L29/4908 ,  H01L29/66765

摘要： A method of manufacturing a thin-film transistor according to an embodiment of the present invention includes the step of forming a gate insulator on a gate electrode. The gate insulator includes at least a first region being in contact with a hydrogenated amorphous silicon film, and a second region positioned below the first region. The first and second regions are deposited using a source gas including NH3, N2, and SiH4, and H2 gas or a mixture of H2 and He. The first region is deposited by setting the flow-rate ratio NH3/SiH4 in a range from 11 to 14 and the second region is deposited by setting the flow-rate ratio NH3/SiH4 to be equal to or less than 4. It is thus possible to provide a thin-film transistor having excellent characteristics and high reliability, a method of manufacturing the same, and a display device including the thin-film transistor mounted thereon.

摘要翻译： 根据本发明的实施例的制造薄膜晶体管的方法包括在栅电极上形成栅极绝缘体的步骤。 栅极绝缘体至少包括与氢化非晶硅膜接触的第一区域和位于第一区域下方的第二区域。 使用包括NH 3，N 2和SiH 4，H 2气体或H 2和He的混合物的源气体来沉积第一和第二区域。 通过将流量比NH3 / SiH4设定在11〜14的范围内来沉积第一区域，并且通过将流量比NH3 / SiH4设定为等于或小于4来沉积第二区域。因此 可以提供具有优异特性和高可靠性的薄膜晶体管，其制造方法以及安装在其上的薄膜晶体管的显示装置。

公开(公告)号：US20080187323A1

公开(公告)日：2008-08-07

申请号：US12003766

申请日：2007-12-31

申请人： Toshiki Honda ,  Takeshi Ono

发明人： Toshiki Honda ,  Takeshi Ono

IPC分类号： H04B10/00 ,  H04B10/06

CPC分类号： H04B10/25133 ,  H04B10/671

摘要： The optical transmitter and receiver of the invention includes: a variable dispersion compensator that performs wavelength dispersion compensation on an optical signal of a differential M-phase modulation format input from a transmission path; an optical amplifier that compensates an optical loss in the variable dispersion compensator; a delay interferometer that delays and interference processes the optical signal output from the optical amplifier; and a photoelectric conversion circuit that photoelectric converts the output light from the delay interferometer to generate a demodulated electric signal. The output level of the optical amplifier is decreased at the time of start up to deteriorate the OSNR of the optical signal input to the photoelectric conversion circuit, to thereby realize a state in which an error occurs more easily, and then optimization control of the variable dispersion compensator and the delay interferometer is started. As a result optimization of the dispersion compensation amount and the phase control amount in the optical receiver corresponding to the differential M-phase modulation format can be performed in a short time.

摘要翻译： 本发明的光发射机和接收机包括：对从传输路径输入的差分M相调制格式的光信号执行波长色散补偿的可变色散补偿器; 补偿可变色散补偿器中的光损耗的光放大器; 延迟和干扰处理从光放大器输出的光信号的延迟干涉仪; 以及光电转换电路，其对来自延迟干涉仪的输出光进行光电转换以产生解调电信号。 光放大器的输出电平在启动时降低，使输入到光电转换电路的光信号的OSNR恶化，从而实现误差更容易发生的状态，然后对变量进行优化控制 色散补偿器和延迟干涉仪启动。 结果，可以在短时间内对与差分M相调制格式相对应的光接收机中的色散补偿量和相位控制量的优化进行优化。