Heat exchanger
    1.
    发明申请

    公开(公告)号:US20060201198A1

    公开(公告)日:2006-09-14

    申请号:US11365899

    申请日:2006-03-01

    IPC分类号: F25B39/02

    摘要: A heat exchanger is provided with a header tank having therein a circulation portion in which fluid flows, and multiple tubes which are stacked in a longitudinal direction of the header tank. The circulation portion is communicated with interiors of the tubes, and partitioned into an inlet side passage and other passages. An inflow port member is arranged at a longitudinal-direction end of the inlet side passage, and provided with multiple openings for causing at least a mainstream flow and a substream flow of fluid introduced toward the tubes. The mainstream flow is substantially evenly flow-divided by the substream flow.

    Heat exchanger
    2.
    发明授权
    Heat exchanger 有权
    热交换器

    公开(公告)号:US07490661B2

    公开(公告)日:2009-02-17

    申请号:US11365899

    申请日:2006-03-01

    摘要: A heat exchanger is provided with a header tank having therein a circulation portion in which fluid flows, and multiple tubes which are stacked in a longitudinal direction of the header tank. The circulation portion is communicated with interiors of the tubes, and partitioned into an inlet side passage and other passages. An inflow port member is arranged at a longitudinal-direction end of the inlet side passage, and provided with multiple openings for causing at least a mainstream flow and a substream flow of fluid introduced toward the tubes. The mainstream flow is substantially evenly flow-divided by the substream flow.

    摘要翻译: 热交换器具有集流箱,其中具有流体流动的循环部分,以及在集管箱的纵向方向上堆叠的多个管。 循环部与管的内部连通,分隔成入口侧通路和其他通路。 入口端口构件布置在入口侧通道的纵向端部处,并且设置有多个开口,用于至少使主导流和流向管引入的流体的子流流动。 主流流量基本上均匀地流过分流流。

    Surface emitting laser, manufacturing method of surface emitting laser, surface emitting laser array, manufacturing method of surface emitting laser array, and optical apparatus including surface emitting laser array
    4.
    发明授权
    Surface emitting laser, manufacturing method of surface emitting laser, surface emitting laser array, manufacturing method of surface emitting laser array, and optical apparatus including surface emitting laser array 有权
    表面发射激光器,表面发射激光器的制造方法,表面发射激光器阵列,表面发射激光器阵列的制造方法和包括表面发射激光器阵列的光学装置

    公开(公告)号:US07924900B2

    公开(公告)日:2011-04-12

    申请号:US12509632

    申请日:2009-07-27

    申请人: Tetsuya Takeuchi

    发明人: Tetsuya Takeuchi

    IPC分类号: H01L21/00 H01S5/00 H01S3/097

    摘要: A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of λ, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of λ/8 to 3λ/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer.

    摘要翻译: 一种表面发射激光器,其通过在基板上层叠下反射镜,有源层和上反射镜而构成,其包括在上反射镜的发光部中,用于控制由 低反射率区域和凹入的高反射率区域,形成在低反射率区域的中心部分,并且以波长λ振荡,其中上反射镜由多层膜反射镜构成,基于由 层叠多个层,多层膜反射镜包括在多层膜反射镜的发光周边部分中具有λ/ 8〜3λ/ 8范围内的光学厚度的相位调整层,以及吸收层 在相位调整层中提供带 - 带吸收。

    LIGHT EMITTING ELEMENT ARRAY AND IMAGE FORMING APPARATUS
    5.
    发明申请
    LIGHT EMITTING ELEMENT ARRAY AND IMAGE FORMING APPARATUS 有权
    发光元件阵列和图像形成装置

    公开(公告)号:US20100252809A1

    公开(公告)日:2010-10-07

    申请号:US12820460

    申请日:2010-06-22

    申请人: Tetsuya Takeuchi

    发明人: Tetsuya Takeuchi

    IPC分类号: H01L31/12 H01L33/04

    摘要: A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are provided in the respective light emitting element regions, and a resistive layer which has a resistance higher than that of the carrier injection layers and which is provided between the active layer and the carrier injection layers.

    摘要翻译: 包括通常用于发光元件区域的有源层的发光元件阵列,彼此电隔离并设置在各个发光元件区域中的并且设置在各个发光元件区域中的载流子注入层以及电阻高于其的电阻层。 并且设置在有源层和载流子注入层之间。

    Process for producing surface emitting laser, process for producing surface emitting laser array, and optical apparatus including surface emitting laser array produced by the process
    6.
    发明授权
    Process for producing surface emitting laser, process for producing surface emitting laser array, and optical apparatus including surface emitting laser array produced by the process 有权
    用于制造表面发射激光的方法,用于制造表面发射激光器阵列的方法以及包括由该方法制造的表面发射激光器阵列的光学装置

    公开(公告)号:US07807485B2

    公开(公告)日:2010-10-05

    申请号:US12509551

    申请日:2009-07-27

    IPC分类号: H01L21/00 H01S5/00

    摘要: Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.

    摘要翻译: 提供一种制造表面发射激光器的方法,该表面发射激光器包括设置在层叠半导体层上的表面浮雕结构,包括以下步骤:向第一电介质膜转移用于限定台面结构的第一图案和用于限定表面浮雕的第二图案 结构在同一过程中; 以及在所述第一电介质膜上形成第二电介质膜和在所述第一图案和所述第二图案转印到所述层叠半导体层的表面上。 因此,表面浮雕结构的中心位置可以高精度地与电流限制结构的中心位置对准。

    Light emitting element array and image forming apparatus
    7.
    发明授权
    Light emitting element array and image forming apparatus 有权
    发光元件阵列和成像装置

    公开(公告)号:US07768021B2

    公开(公告)日:2010-08-03

    申请号:US11609595

    申请日:2006-12-12

    申请人: Tetsuya Takeuchi

    发明人: Tetsuya Takeuchi

    IPC分类号: H01L29/207

    摘要: A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are provided in the respective light emitting element regions, and a resistive layer which has a resistance higher than that of the carrier injection layers and which is provided between the active layer and the carrier injection layers.

    摘要翻译: 包括通常用于发光元件区域的有源层的发光元件阵列,彼此电隔离并设置在各个发光元件区域中的并且设置在各个发光元件区域中的载流子注入层以及电阻高于其的电阻层。 并且设置在有源层和载流子注入层之间。

    Vehicle lamp
    8.
    发明授权
    Vehicle lamp 有权
    车灯

    公开(公告)号:US07311429B2

    公开(公告)日:2007-12-25

    申请号:US11016944

    申请日:2004-12-21

    IPC分类号: B60Q1/04

    CPC分类号: B60Q1/0052 F21S41/337

    摘要: A vehicle lamp can include a sidelight source that is provided in a headlight reflector and which is close to the front end and close to the outer circumference. A position reflector can be provided that is almost in the form of a ring in an integral or split state at the front end, and close to the outer circumference of the headlight reflector to reflect light from the sidelight source toward the front in a certain direction.

    摘要翻译: 车灯可以包括设置在大灯反射器中并且靠近前端并且靠近外圆周的侧光源。 可以提供位置反射器,它几乎是在前端处于整体或分裂状态的环的形式,并且靠近头灯反射器的外周,以将来自侧光源的光沿着一定方向向前方反射 。

    Nitride semiconductor device
    10.
    发明授权
    Nitride semiconductor device 有权
    氮化物半导体器件

    公开(公告)号:US06690700B2

    公开(公告)日:2004-02-10

    申请号:US09833243

    申请日:2001-04-10

    IPC分类号: H01S500

    摘要: A nitride semiconductor device that comprises a first layer, a second layer and a buffer layer sandwiched between the first layer and the second layer. The second layer is a layer of a single-crystal nitride semiconductor material including AlN and has a thickness greater than the thickness at which cracks would form if the second layer were grown directly on the first layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. Incorporating the nitride semiconductor device into a semiconductor laser diode enables the laser diode to generate coherent light having a far-field pattern that exhibits a single peak.

    摘要翻译: 一种氮化物半导体器件,包括夹在第一层和第二层之间的第一层,第二层和缓冲层。 第二层是包括AlN的单晶氮化物半导体材料的层,并且其厚度大于如果第二层直接在第一层上生长则形成裂纹的厚度。 缓冲层是包含AlN的低温沉积氮化物半导体材料的层。 将氮化物半导体器件并入半导体激光二极管使得激光二极管能够产生具有单峰的远场图案的相干光。