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公开(公告)号：US20050141231A1
公开(公告)日：2005-06-30
申请号：US11016944
申请日：2004-12-21
IPC分类号： B60Q1/00 , F21S8/10 , F21V7/00 , F21V17/00 , F21W101/10 , F21Y101/00 , B60Q1/26
CPC分类号： B60Q1/0052 , F21S41/337
摘要： A vehicle lamp can include a sidelight source that is provided in a headlight reflector and which is close to the front end and close to the outer circumference. A position reflector can be provided that is almost in the form of a ring in an integral or split state at the front end, and close to the outer circumference of the headlight reflector to reflect light from the sidelight source toward the front in a certain direction.
摘要翻译： 车灯可以包括设置在大灯反射器中并且靠近前端并且靠近外圆周的侧光源。 可以提供位置反射器，它几乎是在前端处于整体或分裂状态的环的形式，并且靠近头灯反射器的外周，以将来自侧光源的光沿着一定方向向前方反射 。
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公开(公告)号：US07311429B2
公开(公告)日：2007-12-25
申请号：US11016944
申请日：2004-12-21
IPC分类号： B60Q1/04
CPC分类号： B60Q1/0052 , F21S41/337
摘要： A vehicle lamp can include a sidelight source that is provided in a headlight reflector and which is close to the front end and close to the outer circumference. A position reflector can be provided that is almost in the form of a ring in an integral or split state at the front end, and close to the outer circumference of the headlight reflector to reflect light from the sidelight source toward the front in a certain direction.
摘要翻译： 车灯可以包括设置在大灯反射器中并且靠近前端并且靠近外圆周的侧光源。 可以提供位置反射器，它几乎是在前端处于整体或分裂状态的环的形式，并且靠近头灯反射器的外周，以将来自侧光源的光沿着一定方向向前方反射 。
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3.发明授权Red surface emitting laser element, image forming device, and image display apparatus 有权红色表面发射激光元件，图像形成装置和图像显示装置公开(公告)号：US08116344B2
公开(公告)日：2012-02-14
申请号：US12487619
申请日：2009-06-18
IPC分类号： H01S5/183
CPC分类号： H01S5/34326 , B82Y20/00 , H01S5/021 , H01S5/1039 , H01S5/18313 , H01S5/18358 , H01S5/2009 , H01S5/2013 , H01S5/2201 , H01S5/3072 , H01S5/3213 , H01S5/3436
摘要： A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.
摘要翻译： 红色表面发射激光元件包括第一反射器，包括p型半导体多层膜的第二反射器，第一反射器和第二反射器之间的有源层，以及在有源层和第二反射器之间的p型半导体间隔层 反射器，p型半导体间隔层的厚度为100nm以上且350nm以下。
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4.发明授权Surface emitting laser, manufacturing method of surface emitting laser, surface emitting laser array, manufacturing method of surface emitting laser array, and optical apparatus including surface emitting laser array 有权表面发射激光器，表面发射激光器的制造方法，表面发射激光器阵列，表面发射激光器阵列的制造方法和包括表面发射激光器阵列的光学装置公开(公告)号：US07924900B2
公开(公告)日：2011-04-12
申请号：US12509632
申请日：2009-07-27
申请人： Tetsuya Takeuchi
发明人： Tetsuya Takeuchi
CPC分类号： H01S5/18391 , B82Y20/00 , H01S5/0421 , H01S5/18311 , H01S5/18358 , H01S5/18372 , H01S5/2022 , H01S5/34326
摘要： A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of λ, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of λ/8 to 3λ/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer.
摘要翻译： 一种表面发射激光器，其通过在基板上层叠下反射镜，有源层和上反射镜而构成，其包括在上反射镜的发光部中，用于控制由 低反射率区域和凹入的高反射率区域，形成在低反射率区域的中心部分，并且以波长λ振荡，其中上反射镜由多层膜反射镜构成，基于由 层叠多个层，多层膜反射镜包括在多层膜反射镜的发光周边部分中具有λ/ 8〜3λ/ 8范围内的光学厚度的相位调整层，以及吸收层 在相位调整层中提供带 - 带吸收。
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公开(公告)号：US20100252809A1
公开(公告)日：2010-10-07
申请号：US12820460
申请日：2010-06-22
申请人： Tetsuya Takeuchi
发明人： Tetsuya Takeuchi
CPC分类号： H01L27/153 , B41J2/45 , H01L33/145 , H01L2924/0002 , Y10S257/918 , H01L2924/00
摘要： A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are provided in the respective light emitting element regions, and a resistive layer which has a resistance higher than that of the carrier injection layers and which is provided between the active layer and the carrier injection layers.
摘要翻译： 包括通常用于发光元件区域的有源层的发光元件阵列，彼此电隔离并设置在各个发光元件区域中的并且设置在各个发光元件区域中的载流子注入层以及电阻高于其的电阻层。 并且设置在有源层和载流子注入层之间。
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6.发明授权Process for producing surface emitting laser, process for producing surface emitting laser array, and optical apparatus including surface emitting laser array produced by the process 有权用于制造表面发射激光的方法，用于制造表面发射激光器阵列的方法以及包括由该方法制造的表面发射激光器阵列的光学装置公开(公告)号：US07807485B2
公开(公告)日：2010-10-05
申请号：US12509551
申请日：2009-07-27
CPC分类号： H01S5/423 , H01S5/18311 , H01S5/18369 , H01S5/18377 , H01S5/18391 , H01S5/209 , H01S5/34326 , H01S2301/166
摘要： Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.
摘要翻译： 提供一种制造表面发射激光器的方法，该表面发射激光器包括设置在层叠半导体层上的表面浮雕结构，包括以下步骤：向第一电介质膜转移用于限定台面结构的第一图案和用于限定表面浮雕的第二图案 结构在同一过程中; 以及在所述第一电介质膜上形成第二电介质膜和在所述第一图案和所述第二图案转印到所述层叠半导体层的表面上。 因此，表面浮雕结构的中心位置可以高精度地与电流限制结构的中心位置对准。
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公开(公告)号：US07768021B2
公开(公告)日：2010-08-03
申请号：US11609595
申请日：2006-12-12
申请人： Tetsuya Takeuchi
发明人： Tetsuya Takeuchi
IPC分类号： H01L29/207
CPC分类号： H01L27/153 , B41J2/45 , H01L33/145 , H01L2924/0002 , Y10S257/918 , H01L2924/00
摘要： A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are provided in the respective light emitting element regions, and a resistive layer which has a resistance higher than that of the carrier injection layers and which is provided between the active layer and the carrier injection layers.
摘要翻译： 包括通常用于发光元件区域的有源层的发光元件阵列，彼此电隔离并设置在各个发光元件区域中的并且设置在各个发光元件区域中的载流子注入层以及电阻高于其的电阻层。 并且设置在有源层和载流子注入层之间。
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公开(公告)号：US06955933B2
公开(公告)日：2005-10-18
申请号：US09912589
申请日：2001-07-24
申请人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
发明人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
摘要： A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.
摘要翻译： 根据本发明的实施例的发光器件包括具有第一表面的第一导电类型的第一半导体层和形成在第一半导体层上的有源区。 有源区包括作为量子阱层或阻挡层的第二半导体层。 第二半导体层由具有在基本上垂直于第一半导体层的第一表面的方向分级的成分的半导体合金形成。 发光器件还包括形成在有源区上的第二导电类型的第三半导体层。
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公开(公告)号：US06690700B2
公开(公告)日：2004-02-10
申请号：US09833243
申请日：2001-04-10
IPC分类号： H01S500
CPC分类号： H01S5/20 , H01L33/007 , H01L33/0075 , H01S5/2004 , H01S5/32341 , H01S2301/18
摘要： A nitride semiconductor device that comprises a first layer, a second layer and a buffer layer sandwiched between the first layer and the second layer. The second layer is a layer of a single-crystal nitride semiconductor material including AlN and has a thickness greater than the thickness at which cracks would form if the second layer were grown directly on the first layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. Incorporating the nitride semiconductor device into a semiconductor laser diode enables the laser diode to generate coherent light having a far-field pattern that exhibits a single peak.
摘要翻译： 一种氮化物半导体器件，包括夹在第一层和第二层之间的第一层，第二层和缓冲层。 第二层是包括AlN的单晶氮化物半导体材料的层，并且其厚度大于如果第二层直接在第一层上生长则形成裂纹的厚度。 缓冲层是包含AlN的低温沉积氮化物半导体材料的层。 将氮化物半导体器件并入半导体激光二极管使得激光二极管能够产生具有单峰的远场图案的相干光。
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10.发明授权Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency 有权具有降低的压电场和提高效率的III-V族III族半导体发光器件公开(公告)号：US06569704B1
公开(公告)日：2003-05-27
申请号：US09717647
申请日：2000-11-21
IPC分类号： H01L2118
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/16 , H01L33/18 , H01L33/24 , H01S5/021 , H01S5/0213 , H01S5/3201 , H01S5/3202 , H01S5/343 , H01S5/34333
摘要： An optical semiconductor device having a plurality of GaN-based semiconductor layers containing a strained quantum well layer in which the strained quantum well layer has a piezoelectric field that depends on the orientation of the strained quantum well layer when the quantum layer is grown. In the present invention, the strained quantum well layer is grown with an orientation at which the piezoelectric field is less than the maximum value of the piezoelectric field strength as a function of the orientation. In devices having GaN-based semiconductor layers with a wurtzite crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {0001} direction of the wurtzite crystal structure. In devices having GaN-based semiconductor layers with a zincblende crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {111} direction of the zincblende crystal structure. In the preferred embodiment of the present invention, the growth orientation is chosen to minimize the piezoelectric field in the strained quantum well layer.
摘要翻译： 一种具有多个GaN基半导体层的光半导体器件，其含有应变量子阱层，其中应变量子阱层具有取决于量子层生长时应变量子阱层的取向的压电场。 在本发明中，应变量子阱层以压电场小于压电场强度的最大值作为取向的方向生长。 在具有纤锌矿晶体结构的GaN基半导体层的器件中，应变量子阱层的生长方向从纤锌矿晶体结构的{0001}方向倾斜至少1°。 在具有锌辉石晶体结构的GaN基半导体层的器件中，应变量子阱层的生长取向从闪锌矿晶体结构的{111}方向倾斜至少1°。 在本发明的优选实施例中，选择生长方向以最小化应变量子阱层中的压电场。
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