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1.发明申请公开(公告)号：US20120108077A1
公开(公告)日：2012-05-03
申请号：US13231984
申请日：2011-09-14
IPC分类号： H01L21/316 , H01L21/314 , C23C16/34 , C23C16/458 , C23C16/52 , H01L21/318 , C23C16/455
CPC分类号： C23C16/34 , C23C16/45546 , C23C16/4584 , C23C16/56 , H01L21/28556 , H01L21/28562
摘要： Disclosed is a substrate processing apparatus that includes: a substrate supporting member that supports a substrate; a processing chamber capable of housing the substrate supporting member; a rotating mechanism that rotates the substrate supporting member; a carrying mechanism that carries out the substrate supporting member from the processing chamber; a material gas supply system that supplies material gas into the processing chamber; a nitrogen-containing-gas supply system that supplies nitrogen containing gas into the processing chamber; and a controller that controls the material gas supply system, the nitrogen-containing-gas supply system, the carrying mechanism, and the rotating mechanism, after forming a nitride film on the substrate by using the material gas and the nitrogen containing gas, to carry out the substrate supporting member that supports the substrate while being rotated from the processing chamber.
摘要翻译： 公开了一种基板处理装置，其包括：支撑基板的基板支撑部件; 能够容纳基板支撑构件的处理室; 使所述基板支撑部件旋转的旋转机构; 从所述处理室执行所述基板支撑构件的承载机构; 将原料气体供给到处理室内的原料气体供给系统; 含氮气体供给系统，其向所述处理室供给含氮气体; 以及通过使用原料气体和含氮气体在基板上形成氮化膜之后，控制原料气体供给系统，含氮气体供给系统，搬运机构和旋转机构的控制器， 在从处理室旋转的同时支撑基板的基板支撑构件。
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2.发明申请SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权基板加工装置及制造半导体装置的方法公开(公告)号：US20110186984A1
公开(公告)日：2011-08-04
申请号：US13014419
申请日：2011-01-26
IPC分类号： H01L23/482 , H01L21/00 , C23C16/455 , H01L21/3205
CPC分类号： C23C16/455 , C23C16/301 , C23C16/303 , C23C16/45578 , C23C16/52 , H01L21/00 , H01L21/02186 , H01L21/3205 , H01L23/482 , H01L2924/0002 , H01L2924/00
摘要： Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device which are able to form a conductive film, which is dense, includes a low concentration of source-derived impurities and has low resistivity, at a higher film-forming rate. The substrate processing apparatus includes a processing chamber configured to stack and accommodate a plurality of substrates; a first processing gas supply system configured to supply a first processing gas into the processing chamber; a second processing gas supply system configured to supply a second processing gas into the processing chamber; and a control unit configured to control the first processing gas supply system and the second processing gas supply system. Here, at least one of the first processing gas supply system and the second processing gas supply system includes two nozzles which are vertically arranged in a stacking direction of the substrates and have different shapes, and the control unit is configured to supply at least one of the first processing gas and the second processing gas into the processing chamber through the two nozzles having different shapes when films are formed on the substrates by supplying the first processing gas and the second processing gas into the processing chamber at pulses having different film-forming rates.
摘要翻译： 本发明提供一种能够形成导电膜的基板处理装置和半导体装置的制造方法，所述半导体装置在较高的成膜速率下能够形成致密的导电膜，其包含低浓度源源杂质并具有低电阻率。 基板处理装置包括：处理室，被配置为堆叠并容纳多个基板; 第一处理气体供应系统，被配置为将第一处理气体供应到所述处理室中; 第二处理气体供应系统，被配置为将第二处理气体供应到所述处理室中; 以及控制单元，被配置为控制第一处理气体供应系统和第二处理气体供应系统。 这里，第一处理气体供给系统和第二处理气体供给系统中的至少一个包括沿基板的堆叠方向垂直配置的两个喷嘴，并且具有不同的形状，并且控制单元被配置为提供至少一个 当通过在具有不同成膜速率的脉冲下将第一处理气体和第二处理气体供应到处理室中时，通过具有不同形状的两个喷嘴将第一处理气体和第二处理气体输送到处理室中， 。
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3.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权制造半导体器件和衬底加工设备的方法公开(公告)号：US20110183519A1
公开(公告)日：2011-07-28
申请号：US13012320
申请日：2011-01-24
IPC分类号： H01L21/3205 , C23C16/52 , C23C16/455
CPC分类号： H01L21/32051 , C23C16/34 , C23C16/45523 , C23C16/45574 , H01L21/28556 , H01L21/28562
摘要： A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film that is higher in quality than a TiN film formed by a conventional CVD method at a higher film-forming rate, that is, with a higher productivity than a TiN film formed by an ALD method. The method includes steps of: (a) loading a substrate into a processing chamber; (b) forming a predetermined film on the substrate by simultaneously supplying the first processing gas and the second processing gas into the processing chamber; (c) stopping the supply of the first processing gas and the second processing gas and removing the first processing gas and the second processing gas remaining in the processing chamber; (d) modifying the film formed on the substrate by supplying the second processing gas into the processing chamber after the step (c); and (e) unloading the substrate from the processing chamber, wherein, in the step (b), a time period for supplying the second processing gas into the processing chamber is longer than a time period for supplying the first processing gas into the processing chamber.
摘要翻译： 一种制造半导体器件的方法和基板处理设备，其能够提供比通过常规CVD方法形成的TiN膜更高成膜速率的TiN膜，其生产率高于 TiN膜通过ALD法形成。 该方法包括以下步骤：（a）将衬底装载到处理室中; （b）通过同时将第一处理气体和第二处理气体供应到处理室中在基板上形成预定的膜; （c）停止供应第一处理气体和第二处理气体，并除去残留在处理室中的第一处理气体和第二处理气体; （d）在步骤（c）之后，通过将第二处理气体供应到处理室来改变在基板上形成的膜; 以及（e）从所述处理室卸载所述基板，其中在所述步骤（b）中，用于将所述第二处理气体供应到所述处理室中的时间段比用于将所述第一处理气体供应到所述处理室 。
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4.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND SEMICONDUCTOR DEVICE 有权制造半导体器件的方法，衬底处理装置和半导体器件公开(公告)号：US20110031593A1
公开(公告)日：2011-02-10
申请号：US12849398
申请日：2010-08-03
IPC分类号： H01L23/58 , H01L21/469 , H01L21/443
CPC分类号： H01L21/0228 , C23C16/34 , C23C16/45523 , C23C16/45544 , C23C16/45563 , C23C16/52 , H01L21/02104 , H01L21/02172 , H01L21/02225 , H01L21/02263 , H01L21/02271 , H01L21/28506
摘要： There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.
摘要翻译： 提供了制造半导体器件，衬底处理设备和半导体器件的方法。 该方法允许快速形成导电膜，其由于其致密的结构而具有从源极渗透的低浓度的杂质和低电阻率。 该方法通过同时将两种或更多种源提供到处理室中以在放置在处理室中的基板上形成膜来执行。 该方法包括：以第一供应流量将至少一种源提供到处理室中来执行第一源供应过程; 以及通过以与第一供给流量不同的第二供给流量将至少一种源提供到处理室来执行第二源供给处理。
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5.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, CLEANING METHOD, AND SUBSTRATE PROCESSING APPARATUS 审中-公开制造半导体器件的方法，清洁方法和基板处理装置公开(公告)号：US20110290182A1
公开(公告)日：2011-12-01
申请号：US13207591
申请日：2011-08-11
CPC分类号： B08B7/00 , C23C16/4404 , C23C16/4405 , H01L21/28562 , H01L21/67028
摘要： It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber.
摘要翻译： 可以有效地除去附着在处理室的内壁和设置在处理室中的基板支撑工具等部分的导电膜或绝缘膜等沉积材料。 提供了制造半导体器件的方法。 该方法包括：将基板装载到处理室中; 通过将多个源气体供应到所述处理室中，在所述基板上形成导电膜或绝缘膜; 从处理室卸载基板; 以及通过向所述处理室供应修饰气体来修饰粘附到所述处理室的导电膜或绝缘膜。 在进行加载循环之后，多次进行成形，卸载和修改处理，通过将清洁气体供给到处理室中而将附着到处理室的改性导电膜或改性绝缘膜从处理室中除去 处理室。
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6.发明申请公开(公告)号：US20110059600A1
公开(公告)日：2011-03-10
申请号：US12862180
申请日：2010-08-24
IPC分类号： H01L21/443 , B08B5/00
CPC分类号： B08B7/00 , C23C16/4404 , C23C16/4405 , H01L21/28562 , H01L21/67028
摘要： It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber.
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7.发明申请Method of manufacturing a semiconductor device and substrate processing apparatus 有权半导体器件和衬底处理设备的制造方法公开(公告)号：US20100304567A1
公开(公告)日：2010-12-02
申请号：US12801127
申请日：2010-05-24
申请人： Masanori SAKAI , Tatsuyuki SAITO
发明人： Masanori SAKAI , Tatsuyuki SAITO
IPC分类号： H01L21/3205 , B05C11/00
CPC分类号： H01L21/28556 , C23C16/34 , C23C16/45525 , C23C16/45546 , C23C16/56 , H01L21/28562 , H01L21/76862
摘要： A TiN film is formed by a first step of forming a TiN intermediate film on a wafer by supplying TiCl4 and NH3 reacting with TiCl4 to the wafer and controlling a processing condition for causing a bonding branch that has not undergone a substitution reaction to remain at a predetermined concentration at a part of TiCl4 and a second step of substituting the bonding branch contained in the TiN intermediate film by supplying H2 to the wafer, the first step and the second step being performed in this order.
摘要翻译： 通过向晶片供给TiCl4和NH3与TiCl4反应而形成TiN中间膜的第一步骤形成TiN膜，并且控制用于使没有经历取代反应的键合分支的处理条件保持在 在TiCl4的一部分处的预定浓度，以及通过向晶片供给H2来代替包含在TiN中间膜中的结合分支的第二步骤，第一步骤和第二步骤依次进行。
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8.发明申请公开(公告)号：US20110212626A1
公开(公告)日：2011-09-01
申请号：US13104626
申请日：2011-05-10
申请人： Masanori SAKAI , Tomohiro YOSHIMURA
发明人： Masanori SAKAI , Tomohiro YOSHIMURA
IPC分类号： H01L21/04 , C23C16/503
CPC分类号： H01L21/0228 , C23C16/345 , C23C16/45525 , C23C16/45544 , C23C16/45546 , C23C16/45563 , C23C16/4584 , C23C16/509 , C23C16/52 , H01L21/0217 , H01L21/67017 , H01L21/67109 , H01L21/67253
摘要： Disclosed is a substrate processing apparatus, including: a processing chamber for processing a substrate; a substrate rotating mechanism for rotating the substrate; a gas supply unit for supplying gas to the substrate, at least two kinds of gases A and B being alternately supplied a plurality of times to form a desired film on the substrate; and a controller for controlling a rotation period of the substrate or a gas supply period defined as a time period between an instant when the gas A is made to flow and an instant when the gas A is made to flow next time such that the rotation period and the gas supply period are not brought into synchronization with each other at least while the alternate gas supply is carried out predetermined times.
摘要翻译： 公开了一种基板处理装置，包括：处理基板的处理室; 用于旋转衬底的衬底旋转机构; 用于向基板供给气体的气体供给单元，至少两种气体A和B交替地供给多次以在基板上形成所需的膜; 以及控制器，用于控制基板的旋转周期或气体供给周期，其被定义为当气体A流动的时刻与下一次气体A流动的时刻之间的时间段，使得旋转周期 并且至少在交替气体供给被执行预定次数时，气体供给周期不彼此同步。
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9.发明申请SUBSTRATE PROCESSING APPARATUS AND METHOD OF CONFIRMING OPERATION OF LIQUID FLOWRATE CONTROL DEVICE 审中-公开基板处理装置及确认液体流量控制装置的运行方法公开(公告)号：US20110271753A1
公开(公告)日：2011-11-10
申请号：US13177757
申请日：2011-07-07
申请人： Masanori SAKAI
发明人： Masanori SAKAI
IPC分类号： G01F7/00
CPC分类号： G05D7/0635 , C23C16/4485 , C23C16/52
摘要： A substrate processing apparatus and a method of confirming operation of a liquid flowrate control device. The apparatus includes a process chamber accommodating a substrate, a liquid source supply system supplying a liquid source into the chamber at a liquid state at room temperature and under atmospheric pressure, a solvent supply system supplying a solvent into the chamber having a vapor pressure greater than the liquid source, a liquid flowrate control device controlling flowrates of the liquid and solvent, and a controller controlling the liquid and solvent supply systems, and the liquid flowrate control device. The controller controls the liquid and solvent supply systems, and the liquid flowrate control device so the solvent is supplied to the liquid flowrate control device to check an operation of the liquid flowrate control device before the liquid source supply system supplies the liquid into the chamber via the liquid flowrate control device.
摘要翻译： 一种基板处理装置和确认液体流量控制装置的操作的方法。 该装置包括容纳基板的处理室，在室温和大气压下以液体状态将液体源供应到室中的液体源供应系统，向溶剂供应系统中的溶剂供应系统，该溶剂供应系统具有大于 液体源，控制液体和溶剂的流量的液体流量控制装置，以及控制液体和溶剂供应系统的控制器以及液体流量控制装置。 控制器控制液体和溶剂供应系统以及液体流量控制装置，使得溶剂被供应到液体流量控制装置，以在液体源供应系统将液体供应到室内之前检查液体流量控制装置的操作 液体流量控制装置。
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公开(公告)号：US20090176017A1
公开(公告)日：2009-07-09
申请号：US12403667
申请日：2009-03-13
申请人： Masanori SAKAI , Nobuhito Shima , Kazuyuki Okuda
发明人： Masanori SAKAI , Nobuhito Shima , Kazuyuki Okuda
IPC分类号： C23C16/44
CPC分类号： C23C16/4405 , C23C16/45536
摘要： A substrate processing device comprises a reaction vessel 11 forming a space receiving a substrate 1 and adapted to have a plurality of reaction gases supplied thereto to perform desired processing of the substrate, an exhaust port 16 formed in the reaction vessel 11 for exhausting the reaction vessel 11, and a gas supply system 70A, 70B for supplying at least a plurality of reaction gases into the reaction vessel 11, the gas supply system 70A, 70B including a cleaning gas supply unit for supplying a cleaning gas to perform desired processing of the substrate 1 to thereby remove adherents in the reaction vessel 11, and a post-processing gas supply unit for supplying a post-processing gas capable of removing the elements contained in the cleaning gas remaining in the reaction vessel 11 after the adherents have been removed by supplying the cleaning gas, the post-processing gas containing all of the reaction gases used in performing desired processing of the substrate.
摘要翻译： 基板处理装置包括反应容器11，形成容纳基板1的空间，并且适于提供多个反应气体以进行基板的所需处理;形成在反应容器11中用于排出反应容器的排气口 11，以及用于将至少多个反应气体供给到反应容器11中的气体供给系统70A，70B，气体供给系统70A，70B，其包括用于供给清洁气体以进行所需基板的处理的清洗气体供给单元 1，从而除去反应容器11中的附着物;以及后处理气体供给单元，用于提供能够除去残留在反应容器11中的清洁气体中的元素的后处理气体， 清洁气体，后处理气体含有用于进行基材的所需加工的所有反应气体。
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