公开(公告)号：US5401357A

公开(公告)日：1995-03-28

申请号：US937781

申请日：1992-09-01

申请人： Hidekazu Okuhira ,  Tetsuo Ono ,  Susumu Hiraoka ,  Keizo Suzuki ,  Junji Shigeta ,  Hiroshi Masuda ,  Mitsuhiro Mori ,  Takuma Tanimoto ,  Shinichi Nakatsuka ,  Katsuhiko Mitani

发明人： Hidekazu Okuhira ,  Tetsuo Ono ,  Susumu Hiraoka ,  Keizo Suzuki ,  Junji Shigeta ,  Hiroshi Masuda ,  Mitsuhiro Mori ,  Takuma Tanimoto ,  Shinichi Nakatsuka ,  Katsuhiko Mitani

IPC分类号： H01L21/205 ,  H01L21/285 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/316 ,  H01L21/331 ,  H01L21/335 ,  H01L21/338 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L29/778 ,  H01L29/812 ,  B44C1/22

CPC分类号： H01L29/66318 ,  H01L21/28587 ,  H01L21/30621 ,  H01L21/3081 ,  H01L21/31654 ,  H01L29/66462

摘要： A method may be used to dry etch a sample including a plurality of regions different from each other in the photo-absorption of a light having a specified wavelength using an etching gas plasma. The method is capable of selectively etching the desired material from a plurality of materials having different types of band gap energies or from a plurality of materials having different band gap energies. The method includes a step of irradiating a light having the specified wavelength on the sample for reducing an etching rate of a region having a large photo-absorption coefficient to the light, thereby selectively etching a region having a small photo-absorption coefficient to the light.

摘要翻译： 在使用蚀刻气体等离子体对具有特定波长的光的光吸收中，可以使用一种方法来干蚀刻包括彼此不同的多个区域的样品。 该方法能够从具有不同类型的带隙能量的多种材料或具有不同带隙能量的多种材料中选择性地蚀刻所需的材料。 该方法包括在样品上照射具有特定波长的光以降低对光具有大的光吸收系数的区域的蚀刻速率的步骤，从而选择性地将具有小的光吸收系数的区域蚀刻到光 。

公开(公告)号：US5505778A

公开(公告)日：1996-04-09

申请号：US730078

申请日：1991-07-15

申请人： Tetsuo Ono ,  Susumu Hiraoka ,  Sakae Saito ,  Kunio Harada ,  Mituhiro Tachibana ,  Shigeo Kubota ,  Keizo Suzuki

发明人： Tetsuo Ono ,  Susumu Hiraoka ,  Sakae Saito ,  Kunio Harada ,  Mituhiro Tachibana ,  Shigeo Kubota ,  Keizo Suzuki

IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/54

CPC分类号： C23C16/452 ,  C23C16/4557 ,  Y10S438/974

摘要： An apparatus for treating solid surface using a thermally excited molecular beam according to the present invention is capable of completely preventing flying of contaminant caused by a heating source to a sample. To achieve this, in the present invention, the heating source for exciting the molecules is hermetically separated from the sample. Alternatively, a container where the heating source is housed and a container where the sample is accommodated are separated such that a conductance between the two containers is sufficiently small. In this way, chemical reactions between the molecular beam of the reactive gas which is highly reactive and the heating source heated to high temperatures can be eliminated, and flying of the contaminant to the sample can thus be greatly reduced. As a result, flying of the contaminating substances caused by the heating source to the sample can be prevented, and reduction in the surface treating rate of the sample, caused by the contaminant, can be prevented.

摘要翻译： 根据本发明的使用热激发分子束处理固体表面的设备能够完全防止由加热源引起的污染物飞溅到样品。 为了实现这一点，在本发明中，用于激发分子的加热源与样品气密分离。 或者，容纳加热源的容器和容纳样品的容器被分离，使得两个容器之间的电导足够小。 以这种方式，可以消除高反应性的反应性气体的分子束与加热到高温的加热源之间的化学反应，从而大大减少污染物向样品的飞散。 结果，可以防止由加热源引起的对样品的污染物质的飞溅，并且可以防止由污染物引起的样品表面处理速度的降低。

公开(公告)号：US5110407A

公开(公告)日：1992-05-05

申请号：US658399

申请日：1991-02-20

申请人： Tetsuo Ono ,  Susumu Hiraoka ,  Keizo Suzuki

发明人： Tetsuo Ono ,  Susumu Hiraoka ,  Keizo Suzuki

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308

CPC分类号： H01L21/3085 ,  H01L21/3065

摘要： Anisotropic etching can be obtained in the direction of the incident heated beam of reactive gas with the introduction of a second material for controlling reactivity.

摘要翻译： 通过引入用于控制反应性的第二材料，可以在入射的加热的反应气体束的方向上获得各向异性蚀刻。

公开(公告)号：US5108778A

公开(公告)日：1992-04-28

申请号：US511946

申请日：1990-04-16

申请人： Keizo Suzuki ,  Susumu Hiraoka ,  Tatsumi Mizutani ,  Shigeru Nishimatsu

发明人： Keizo Suzuki ,  Susumu Hiraoka ,  Tatsumi Mizutani ,  Shigeru Nishimatsu

IPC分类号： C23C16/48 ,  C23F4/00 ,  C30B33/00

CPC分类号： C23C16/48 ,  C23F4/00 ,  C30B33/00

摘要： Disclosed are a surface treatment method and apparatus in which an active species beam that contains active species having translational energy in a range of 0.01-100 eV as at least a partial constituent thereof constructs at least a part of treatment means.

公开(公告)号：US4886571A

公开(公告)日：1989-12-12

申请号：US302334

申请日：1989-01-27

申请人： Keizo Suzuki ,  Susumu Hiraoka ,  Shigeru Nishimatsu

发明人： Keizo Suzuki ,  Susumu Hiraoka ,  Shigeru Nishimatsu

IPC分类号： H01L21/302 ,  C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L21/3065

CPC分类号： C23C16/45565 ,  C23C16/44 ,  C23C16/455 ,  C23C16/45591 ,  Y10S156/914

摘要： An apparatus for surface treating a sample article with activated particles, comprising a reaction chamber in which a sample article to be surface processed is placed, means for introducing a reaction gas into the reaction chamber, an activation surface properly set in the reaction chamber and arranged capable of activating at least one part of the particles composing the reaction gas, and means for evacuating the used reaction gas out of the reaction chamber.

摘要翻译： 一种用于用活化颗粒表面处理样品的装置，包括其中放置待表面处理样品的反应室，用于将反应气体引入反应室的装置，适当地设置在反应室中的活化表面， 能够活化至少一部分构成反应气体的粒子，以及将所使用的反应气体从反应室排出的装置。

公开(公告)号：US4828874A

公开(公告)日：1989-05-09

申请号：US46166

申请日：1987-05-05

申请人： Susumu Hiraoka ,  Keizo Suzuki ,  Shigeru Nishimatsu

发明人： Susumu Hiraoka ,  Keizo Suzuki ,  Shigeru Nishimatsu

IPC分类号： H01L21/302 ,  C23C16/48 ,  H01L21/3213

CPC分类号： H01L21/32137 ,  C23C16/483

摘要： A surface treatment method, wherein gas particles are applied to a solid surface of a substrate to treat the same surface, comprising the step of applying to the gas particles the narrow line width laser light capable of exciting or decomposing only such gas particles that have velocities in a predetermined range.

摘要翻译： 一种表面处理方法，其中将气体颗粒施加到基材的固体表面以处理相同的表面，包括向气体颗粒施加能够仅激发或分解具有速度的气体颗粒的窄线宽度激光的步骤 在预定范围内。

公开(公告)号：US5891252A

公开(公告)日：1999-04-06

申请号：US766818

申请日：1996-12-13

申请人： Ken'etsu Yokogawa ,  Tetsuo Ono ,  Kazunori Tsujimoto ,  Naoshi Itabashi ,  Masahito Mori ,  Shinichi Tachi ,  Keizo Suzuki

发明人： Ken'etsu Yokogawa ,  Tetsuo Ono ,  Kazunori Tsujimoto ,  Naoshi Itabashi ,  Masahito Mori ,  Shinichi Tachi ,  Keizo Suzuki

IPC分类号： C23C16/00 ,  H01J37/32

CPC分类号： H01J37/3222 ,  H01J37/32082 ,  H01J37/32678 ,  H01J2237/3341

摘要： A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced. Further, a radical effective in etching can be increased by reaction between the surface of a planar conductive plate for radiating an electromagnetic wave and plasma.

公开(公告)号：US5462635A

公开(公告)日：1995-10-31

申请号：US251660

申请日：1994-05-31

申请人： Tetsuo Ono ,  Tatsumi Mizutani ,  Keizo Suzuki

发明人： Tetsuo Ono ,  Tatsumi Mizutani ,  Keizo Suzuki

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01L21/28211 ,  H01J37/32082 ,  H01J37/32192 ,  H01L21/32137 ,  H01J2237/334 ,  H01J2237/3348

摘要： A surface processing method capable of processing the surface of a work at a high processing rate without damaging the surface of the work uses, in combination, a fast processing technique using charged particles and a moderate processing technique using neutral particles that scarcely damage the surface of the work, and a surface processing apparatus suitable for carrying out the surface processing method. In carrying out a surface treatment process, the substrate is processed in a moderate surface processing mode using neutral particles while the substrate is exposed substantially to charged particles, and the substrate is processed in a fast surface processing mode using charged particles while the substrate is not exposed substantially to charged particles to achieve the surface treatment process at a high processing rate without damaging the surface of the substrate.

摘要翻译： 能够以高加工速度处理工件的表面而不损害工件表面的表面处理方法组合使用带电粒子的快速加工技术和使用几乎不损伤表面的中性粒子的中等加工技术 该工作以及适于执行表面处理方法的表面处理设备。 在进行表面处理工艺时，使用中性粒子在中等的表面处理模式下对基板进行处理，同时基板基本上暴露于带电粒子，并且基板在使用带电粒子的情况下以快速表面处理模式进行处理，而基板不是 基本上暴露于带电粒子以在高加工速率下实现表面处理工艺，而不会损坏基板的表面。

公开(公告)号：US6033481A

公开(公告)日：2000-03-07

申请号：US225971

申请日：1999-01-06

申请人： Ken'etsu Yokogawa ,  Tetsuo Ono ,  Kazunori Tsujimoto ,  Naoshi Itabashi ,  Masahito Mori ,  Shinichi Tachi ,  Keizo Suzuki

发明人： Ken'etsu Yokogawa ,  Tetsuo Ono ,  Kazunori Tsujimoto ,  Naoshi Itabashi ,  Masahito Mori ,  Shinichi Tachi ,  Keizo Suzuki

IPC分类号： C23C16/00 ,  H01J37/32

CPC分类号： H01J37/3222 ,  H01J37/32082 ,  H01J37/32678 ,  H01J2237/3341

摘要： A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced. Further, a radical effective in etching can be increased by reaction between the surface of a planar conductive plate for radiating an electromagnetic wave and plasma.

摘要翻译： 公开了能够在大范围内产生均匀的等离子体并能够实现高蚀刻选择性和高纵横比的微小加工的功耗降低的等离子体处理装置。 利用由超高频带和磁场中的电磁波引起的电子回旋共振现象，在容纳加工样品的真空容器中产生高密度等离子体，并且使用该等离子体蚀刻处理样品的表面。 用于产生等离子体的超高频带中的电磁波从由石墨或硅组成的平面导电板辐射，该导电板与被处理样品的表面相对地设置在真空容器内部的空间中。 通过在超高频带中使用电磁波可以产生低解离度的高密度等离子体，结果可以提高蚀刻反应的可控性。 此外，通过用于辐射电磁波的平面导电板的表面与等离子体之间的反应可以增加蚀刻中有效的自由基。

公开(公告)号：US08085220B2

公开(公告)日：2011-12-27

申请号：US12323592

申请日：2008-11-26

申请人： Shunichiro Nobuki ,  Norihiro Uemura ,  Masakazu Sagawa ,  Keizo Suzuki ,  Yoshiro Mikami ,  Hideto Momose ,  Shirun Ho

发明人： Shunichiro Nobuki ,  Norihiro Uemura ,  Masakazu Sagawa ,  Keizo Suzuki ,  Yoshiro Mikami ,  Hideto Momose ,  Shirun Ho

IPC分类号： G09G3/28

CPC分类号： H01J11/26 ,  H01J11/12 ,  H01J11/24 ,  H01J11/36 ,  H01J2211/245 ,  H01J2211/265 ,  H01J2211/365

摘要： A plasma display apparatus having a priming discharge region PDC partitioned from a display discharge cell DDC, by a traverse rib, at a side where the second electrode between the display discharge cell DDC adjacent in a row direction is adjacent; a second longitudinal rib partitioning the priming discharge region PDC; a third longitudinal rib, further partitioning a region partitioned by the second longitudinal rib into two sections; a convex electrode; and a gap connecting the display discharge cell DDC and the priming discharge cell PDC, wherein a sum of a width in a line direction of a nearly rectangular space region containing adjacent two priming discharge cells PDCs, and a pattern width of the second longitudinal rib is designed larger than a sum of a width in the row direction and a pattern width of the traverse rib.

摘要翻译： 一种等离子体显示装置，在显示用放电单元DDC与行方向相邻的显示用放电单元DDC之间的第二电极相邻的一侧，通过横动肋从显示用放电单元DDC分割的起动放电区域PDC; 分隔起动放电区域PDC的第二纵向肋; 第三纵向肋，进一步将由所述第二纵向肋分隔的区域划分成两个部分; 凸电极 以及连接显示放电单元DDC和起动放电单元PDC的间隙，其中，包含相邻两个起动放电单元PDC的近似矩形的空间区域的线方向的宽度与第二纵向肋的图案宽度之和为 设计成大于行方向宽度和横幅的图案宽度之和。